Nanometer Metal Oxide Research Articles

Nanometer metal–oxide semiconductor field effect transistor structures for studying electron transport

Nanostructures including quantum wires and rings based on polycrystalline silicon gate metal–oxide semiconductor field effect transistor system were fabricated for fundamental studies of electron transport. Gate configurations were defined by electron beam lithography and dry etching using whole 3 in. wafers. A good low-field electron mobility (∼1.5 m2 V−1 s−1) in the inversion channel has been obtained at 4.2 K. Clear steplike quantized conductance has been observed at 4.2 K in the wires fabricated.