Low-κ dielectric polymers are extensivelyutilized inthe microelectronic industries because of their excellent mechanical and good insulating properties. Zr-based metal organic frameworks (MOFs) have shown suitable MOF/Polymer bonding and offer better mechanical properties than pure polymer. The present paper comprehensively explained the methods of synthesis and dielectric behavior of UiO-66 filled epoxy (EP) composites. In this study, nano-sized fillers Zr-based MOFs, UIO-66 (0.1% and 0.2%) were successfully introduced intoEP to investigatethe dielectric behavior of the prepared samples. The results clearly showed the dielectric constant of EP/UiO-66 (0.2%) was decreased to 2.99 from 3.175 (pure EP) therefore, the dielectric loss was reduced to 0.056 from 0.068. From the motivating results, we can say that UiO-66 playeda substantial part in bringing down the polymer dielectric propertiesand shouldbe getting further developmentwithin thefuture for preparing low-k EP composites.