Nano-silver paste is considered the most promising die-attach material due to the small size effect and low-temperature sintering characteristics. Pressure-assisted manufacturing process can accelerate the sintering of silver (Ag) nanoparticles, forming high-quality chip interconnect interface. In this paper, molecular dynamics (MD) simulation was performed for the first time to reveal the densification mechanism and surface mechanical failure evolution behavior of complex Ag nanoparticle interconnect interface in pressure-assisted manufacturing processes. The roles of sintering pressure, sintering parameters, and nanoparticle diameter in the densification process of Ag nanoparticles were evaluated via atomic strain, mean square displacement, sintering density, and atomic layer fault analysis. External pressure can promote the formation of sintering necks through a forced mechanical action. Changing the sintering temperature can regulate the crystal evolution mode of the interface. To describe the mechanism of densification process, we propose a competitive model that correlates sintering pressure, sintering temperature, optimal steady-state sintering time, and initial system stability. Shortening the optimal sintering steady-state time of the system can make a positive contribution to sintering performance. From the perspective of improving mechanical performance, we should try to avoid the occurrence of nanoparticle morphology characteristics inside the sintered interconnect interface, which may cause sintering neck failure. The expansion and failure of random defects are beneficial for increasing mechanical reliability. This study can provide comprehensive and effective theoretical guidance for manufacturing process of high-performance chip interconnect interface.
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