This study investigates the deposition of tin trisulfide (Sn2S3) films onto glass substrates through the nebulizer spray technique, employing aqueous solutions of SnCl2 and SC (NH2)2 at a molar ratio of Sn to S of 1:2 under various doping concentrations of ruthenium (1, 2, 3, 4, and 5 wt %). The crystallography, morphology, chemical, optical and photo sensing characteristics of deposited thin films has been comprehensively analysed using an X-ray diffractometer, Field emission scanning electron microscope annexed with energy dispersive X-ray analyser, UV-VIS spectrometer, Photoluminescence spectroscopy and a digital Keithley source meter. The X-ray diffraction investigation clearly establishes the polycrystalline nature of the films possessing orthorhombic crystal structure. The surface morphology was visualized via Field Emission Scanning Electron Microscope which confirmed the existence of spherical nano grains at 3 % Ru doping concentration. The energy dispersive X-ray analyser spectrum was used to probe the elements present in the prepared thin film and it supports the presence of Sn, S and Ru. The optical absorption and transmittance spectra were observed in the wavelength range between 450 and 900 nm for all the samples. Enhanced absorption in the visible region is observed from the absorption spectra. Direct allowed band gap values ranging around 2.05 eV–1.92 eV is observed for these Ru doped spray pyrolyzed Sn2S3 thin films. The I–V characteristics of the samples, studied under both light and dark conditions, demonstrate an increase in current values with higher concentrations of Ru doping. The highest value of the photo current (36 μA) was observed for 3 wt % ruthenium doped film. Highest responsivity of 67.6 × 10−2 A/W was observed for 3 % Ru doped Sn2S3 film. The same sample showed a highest detectivity and external quantum efficiency values of 8.70 × 109 Jones and 157 % respectively. The quick response of the detector can be affirmed from the short rise and fall time of 1.22 s and 1.21 s, respectively. Therefore, the Sn2S3 material doped with 3 % ruthenium, produced via the current economical method, emerges as a promising candidate for application in photo-detectors.
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