Lead-free dielectric thin films' potential as pulse capacitors in power electronic devices has garnered attention to their energy storage usage. The current study aims at the growth of multiferroic thin films using the pulsed laser deposition technique for energy storage capacitor applications. Under various OPPs, single-phase La-doped bismuth ferrite (Bi0.993La0.007FeO3) BLFO thin film of 200 nm thickness is deposited on quartz and n-type Si substrates (15 to 30 SCCM). The crystal planes (110) and (006) of the rhombohedral phase with space group R3c are confirmed by high-resolution HRTEM and SAED patterns that augmented the XRD analysis. The optimized films have a smooth, uniform microstructure with 3 nm root-mean-square (RMS) roughness. The film shows an enhanced dielectric constant of 447 at room temperature with an improved ferroelectric property. At 488 kV/cm, the 20 SCCM BLFO films achieved 78.42 % energy efficiency and 2.09 J/cm3 energy density. The same films also exhibited a lower value of bandgap energy, confirming the strong absorption at 452 nm wavelength. The relatively high refractive index of 2.78 is determined for the same film suggesting the higher crystallinity of the film. Further, the low magnitude of leakage current density of the grown film is ∼10−7 A/cm2 at ±100 kV/cm. Though achieving the pure phase and fabricating BLFO thin films is challenging, these results are appropriate for the thin films to realize as energy storage capacitor applications.