N-channel Metal-oxide Field-effect Transistors Research Articles

A Ćuk Converter Cell Balancing Technique by Using Coupled Inductors for Lithium-Based Batteries

In this paper, a c ´ uk converter balancing method by using a coupled inductor for lithium based batteries is investigated. The proposed circuit is an active balancing circuit that will equalize eight battery cells in a series. In electrical vehicles (EV), a battery management system (BMS) is a vital task to achieve the best performance of the batteries and longer lifetime. The problem of voltage difference in a battery pack is an important issue to be improved. To overcome the voltage differences in battery string, an equalizing method is mandatory. The conventional c ´ uk converter requires 2(n − 1) switches to balance n cells, while the proposed circuit requires only n switches for n cells in series. In addition, the proposed developed topology uses coupled inductors instead of un-coupled inductors, unlike the traditional c ´ uk converter balancing method. Since the c ´ uk balancing transfers the energy among two adjacent cells, it requires a proportionately long equalization time particularly for long string battery packs, but the coupled inductor c ´ uk converter type overcomes this problem. The switches are N-channel metal-oxide field-effect transistor (MOSFET) to achieve lower drain-source on-resistance, R D S ( o n ) , and less voltage drop as compared to the P-channels. The switches are triggered by complementary signals. The coupled inductor is made in such a way to hold the same magnetizing inductance. It can be done by using five wires in one hand. The circuit contains five inductors, one magnetic core, with five winding for eight cells, and one capacitor for two cells. Therefore, the overall circuitry and complexity of the circuit are reduced, resulting in a more cost-effective and easy to implement circuit. The system also does not demand complicated control for battery equalizing. The experimental circuit was implemented and simulation results were obtained to confirm the validity of the proposed system.

Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

Structural and band alignment properties of atomic layer Al2O3 oxide film deposited on crystallographically oriented epitaxial Ge grown in-situ on (100), (110), and (111)A GaAs substrates using two separate molecular beam epitaxy chambers were investigated using cross-sectional transmission microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). High-resolution triple axis x-ray measurement demonstrated pseudomorphic and high-quality Ge epitaxial layer on crystallographically oriented GaAs substrates. The cross-sectional TEM exhibited a sharp interface between the Ge epilayer and each orientation of the GaAs substrate as well as the Al2O3 film and the Ge epilayer. The extracted valence band offset, ΔEv, values of Al2O3 relative to (100), (110), and (111) Ge orientations using XPS measurement were 3.17 eV, 3.34 eV, and 3.10 eV, respectively. Using XPS data, variations in ΔEv related to the crystallographic orientation were ΔEV(110)Ge>ΔEV(100)Ge≥ΔEV(111)Ge and the conduction band offset, ΔEc, related to the crystallographic orientation was ΔEc(111)Ge>ΔEc(110)Ge>ΔEc(100)Ge using the measured ΔEv, bandgap of Al2O3 in each orientation, and well-known Ge bandgap of 0.67 eV. These band offset parameters are important for future application of Ge-based p- and n-channel metal-oxide field-effect transistor design.

Energy band alignment of atomic layer deposited HfO2 oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers

Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO2) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, ΔEv values of HfO2 relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, ΔEV(100)Ge>ΔEV(111)Ge>ΔEV(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, ΔEc relation, ΔEc(110)Ge>ΔEc(111)Ge>ΔEc(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO2 on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

Gate Voltage Influence on the Channel Hot-Carrier Degradation of High-$k$ -Based Devices

In ultrascaled complimentary metal-oxide-semiconductor technologies, the lucky-electron model does not describe correctly Channel Hot-Carrier (CHC) degradation for typical transistor test conditions independently of the gate dielectric (SiO2 or high- k). A new model to describe the CHC degradation behavior in n-channel metal-oxide field-effect transistors, based on the dominant role of the gate voltage into the total CHC stress, is presented. This new model can be applicable to long- and short-channel transistors with high- k or SiO2 as a dielectric.

Low-power bacteriorhodopsin-silicon n-channel metal-oxide field-effect transistor photoreceiver

A bacteriorhodopsin (bR)-silicon n-channel metal-oxide field-effect transistor (NMOSFET) monolithically integrated photoreceiver is demonstrated. The bR film is selectively formed on an external gate electrode of the transistor by electrophoretic deposition. A modified biasing circuit is incorporated, which helps to match the resistance of the bR film to the input impedance of the NMOSFET and to shift the operating point of the transistor to coincide with the maximum gain. The photoreceiver exhibits a responsivity of 4.7 mA/W.