The silicon carbide (SiC) waffle-substrate <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}$ </tex-math></inline-formula> -channel insulated gate bipolar transistor (IGBT) is a vertical IGBT designed to operate at blocking voltages below about 15 kV. At these voltages, the drift and anode layers are too thin to allow complete removal of the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}^{+}$ </tex-math></inline-formula> substrate. Instead, a waffle pattern is etched through the substrate to expose the buried anode layer while preserving the structural integrity of the wafer. The feasibility of this approach is demonstrated by fabricating a 10-kV class <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}$ </tex-math></inline-formula> -channel IGBT with a differential specific ON-resistance of 160 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{m}\Omega \cdot \text{cm}^{2}$ </tex-math></inline-formula> .