Abstract
For the first time, large area 10 kV SiC power devices are being produced capable of yielding power modules for high-frequency megawatt power conversion. To this end, the switching performance and power dissipation of silicon carbide (SiC) n-channel IGBTs and MOSFETs are evaluated using numerical simulations software over an extended current range to determine the best device suitable for 10 kV applications. Each device is also optimized for minimal forward voltage drop in the on-state.
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