Abstract
Silicon carbide (SiC) MOSFETs are about to replace conventional silicon-based power switches. Due to their blocking, thermal, conducting and switching characteristics they represent a better solution for high power and high voltage applications, such as automotive motor drives in hybrid electric vehicle. Operating conditions and advantages of using SiC MOSFET in a typical automotive motor drive application are presented. Furthermore, SiC MOSFET driving requirements are described and a driving concept based on a SiC integrated circuit (IC) is presented. The SiC IC is comprised of components available in recently presented target technology - SiC depletion and enhancement mode MOSFETs, polysilicon and diffusion resistors.
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