MZO Films Research Articles

Structure and surface properties of epitaxialMg0.4Zn0.6O alloy films on different substrates

Selective growth of single-orientation epitaxialMg0.4Zn0.6O (MZO)films on LaAlO3 (LAO)(001) and Al2O3(0001) substrates has been obtained by the pulsed laser deposition method. It was found that theorientation of the MZO films is determined at the initial deposition stage by thesubstrate orientation only. Highly (001)-oriented MZO films could be stabilized onthe LAO (001) substrates, while (111)-oriented MZO films are obtained on theAl2O3(0001) substrates. X-ray diffraction and transmission electron microscopy characterizations showedthe excellent epitaxial relationships of (001)- and (111)-oriented films on LAO andAl2O3 substrates, respectively. Under the deposition conditions used, the surfaces of MZO filmswith different single orientation were smooth and featureless.

Physical properties and etching characteristics of metal (Al, Ag, Li) doped ZnO films grown by RF magnetron sputtering

Metal doped ZnO (MZO, metal = Al, Ag, Li) films were deposited by RF magnetron sputtering system. We investigated the physical properties and the etching characteristics of the MZO films. All MZO films have shown a preferred orientation in the [001] direction. As amounts and a kind of dopant in the target were changed, the crystallinity and the transmittance as well as the optical band gap were changed. The electrical resistivity was also changed according to the metal doping amounts and a kind of dopant. The chemical dry etching of as-grown MZO thin films was investigated by varying gas mixing ratio of CH 4/(CH 4 + H 2 + Ar) and additive Cl 2 chemistries. We could effectively etch not only a zinc oxide but also metal dopant using methane, hydrogen, argon, as well as chlorine gas. Changes of the structural, optical electrical properties, etch rate, and chemical states of etched surface for the MZO films were also explained with the data obtained by SEM, XRD, UV, 4-point-probe and XPS analyses.

Metal-doped ZnO thin films: Synthesis and characterizations

The metal doped ZnO (MZO, M = Al, Ag) films were prepared by RF magnetron sputtering on glass substrates with extraordinary designed the MZO targets. For the doping sources contained in each MZO target, we used Al(OH) 3, AgNO 3 powders by mixing the powders into pure ZnO powder with various rate (0–10 wt.%), respectively. We investigated on the optical and electrical properties of the as-sputtered MZO films as dependences of the dopant contents in targets. All the MZO films had shown a preferred orientation in the [001] direction. As the quantity and variety of metal dopants were changed, the crystallinity and the transmittance as well as optical band gap were changed. The electrical resistivity was also changed with changing metal doping amounts and a kind of dopant. To investigate these phenomena in details, the O K-edge configurations of the MZO films were studied.