Abstract With ongoing advancements in semiconductor technology, understanding thermal transport in semiconductor devices—where phonons are the primary charge carriers—is crucial. This involves a multiscale process in which phenomena at different scales are governed by distinct control equations, necessitating various numerical methods. In this context, this paper introduces a novel multiscale simulation method called the Second-Order Reconstruction Operator Finite Difference Lattice Boltzmann Method (ROsFDLBM). This method effectively combines the Lattice Boltzmann Method (LBM) with the Finite Difference Method (FDM). ROsFDLBM employs reconstruction operators to accurately map the relationship between distribution functions and macroscopic physical quantities, significantly reducing errors caused by the transmission of interface information. The efficacy of this coupling scheme has been confirmed through an interface-coupled thermal diffusion model. Comparative analyses have revealed that the relative error of ROsFDLBM does not exceed 1.2%, demonstrating its superior accuracy. Further simulations of GaN devices have confirmed that traditional macroscopic methods tend to underestimate the temperature in the heat source area at micro-nano scales, with discrepancies reaching up to 60.9 K. Overall, the ROsFDLBM aligns with current research findings and offers an accurate and efficient simulation strategy for addressing complex heat transfer problems.