Multiple Wavelength Emission Research Articles

Dynamical characteristics of AC-driven hybrid WSe2 monolayer/AlGaInP quantum wells light-emitting device

The exploration of functional light-emitting devices and numerous optoelectronic applications can be accomplished on an elegant platform provided by rapidly developing transition metal dichalcogenides (TMDCs). However, TMDCs-based light emitting devices encounter certain serious difficulties, such as high resistance losses from ohmic contacts or the need for complex heterostructures, which restricts the device applications. Despite the fact that AC-driven light emitting devices have developed ways to overcome these challenges, there is still a significant demand for multiple wavelength emission from a single device, which is necessary for full color light emitting devices. Here, we developed a dual-color AC-driven light-emitting device by integrating the WSe2 monolayer and AlGaInP–GaInP multiple quantum well (MQW) structures in the form of capacitor structure using AlOx insulating layer between the two emitters. In order to comprehend the characteristics of the hybrid device under various driving circumstances, we investigate the frequency-dependent EL intensity of the hybrid device using an equivalent RC circuit model. The time-resolved electroluminescence (TREL) characteristics of the hybrid device were analyzed in details to elucidate the underlying physical mechanisms governing its performance under varying applied frequencies. This dual-color hybrid light-emitting device enables the use of 2-D TMDC-based light emitters in a wider range of applications, including broad-band LEDs, quantum display systems, and chip-scale optoelectronic integrated systems.Graphical

Multicolor multifocal 3D microscopy using in-situ optimization of a spatial light modulator

Multifocal microscopy enables high-speed three-dimensional (3D) volume imaging by using a multifocal grating in the emission path. This grating is typically designed to afford a uniform illumination of multifocal subimages for a single emission wavelength. Using the same grating for multicolor imaging results in non-uniform subimage intensities in emission wavelengths for which the grating is not designed. This has restricted multifocal microscopy applications for samples having multicolored fluorophores. In this paper, we present a multicolor multifocal microscope implementation which uses a Spatial Light Modulator (SLM) as a single multifocal grating to realize near-uniform multifocal subimage intensities across multiple wavelength emission bands. Using real-time control of an in-situ-optimized SLM implemented as a multifocal grating, we demonstrate multicolor multifocal 3D imaging over three emission bands by imaging multicolored particles as well as Escherichia coli (E. coli) interacting with human liver cancer cells, at sim 2.5 multicolor 3D volumes per second acquisition speed. Our multicolor multifocal method is adaptable across SLM hardware, emission wavelength band locations and number of emission bands, making it particularly suited for researchers investigating fast processes occurring across a volume where multiple species are involved.

Semiconductor ring laser with filtered optical feedback: traveling wave description and experimental validation

We study experimentally and theoretically a semiconductor ring laser with four filtering channels providing filtered delayed optical feedback. To describe and analyze the wavelength selection and tuning in this device, we exploit the traveling-wave model determining the evolution of optical fields and carrier density along the ring cavity and filtering branches. The numerical results agree with the experimental observations: we can reproduce the wavelength tuning, the multiple wavelength emission, and the wavelength switching speed measured in these devices. The traveling-wave model allows us to study in detail the effect of the different laser parameters and can be useful for designing future devices.

Gas-self-filter-based erbium-doped fiber loop laser for gas detection.

An erbium-doped fiber (EDF) loop laser, based on a gas-self-filter (GSF), is developed with single or multiple wavelength emission. The GSF is a type of Mach-Zehnder interferometer with a gas cell in one arm. By matching the destructive wavelength of the interferometer with the gas absorption line, the self-filtering function is achieved. A GSF-based multi-wavelength laser with a side-mode suppression ratio of ~50 dB is performed. As an example, C₂H₂ gas is detected using a single-wavelength GSF-based laser with correlation spectroscopy, and a good linearity of the measurement is obtained. The present laser has the potential advantage for multiple gas detection, e.g., being free of wavelength calibration.

Design and fabrication of ZnO light-emitting devices using filtered cathodic vacuum arc technique

Recent progress in the fabrication of ultraviolet (UV) ZnO light-emitting devices using filtered cathodic vacuum arc (FCVA) technique is reviewed. The design and fabrication of ZnO optical waveguides are investigated. The phenomenon of random laser action in ZnO suggests efficient UV lasing from the ZnO waveguide under optical excitation can be achieved. The methods of eliminating the undesired optical characteristics of random laser action such as high scattering loss, non-axial radiation and multiple wavelength emission are also studied. Furthermore, the fabrication of UV ZnO heterojunction light-emitting diodes is described.

Multiple-wavelength emission from In/sub x/Ga/sub 1-x/As-GaAs quantum wells grown on a nanoscale faceted GaAs substrate by molecular beam epitaxy

Multiple-wavelength photoluminescence (PL) spanning a 160-nm range from 980 to 1140 nm (77 K) has been obtained from In/sub x/Ga/sub 1-x/As-GaAs quantum wells (QWs) with varying In composition x on a nanoscale faceted (nanofaceted) GaAs substrate grown by molecular beam epitaxy. Five nanofaceted regions which consist of periodic [100]-(n11) (n = 3 or 1) facets along [011~] with different periods were prepared on a single substrate by interferometric lithography and selective growth of GaAs. The pattern period p was varied from infinity (large-area unpatterned) to 210 nm while the lateral width of the (n11) facet region was kept constant at /spl sim/180 to 200 nm within each period. A 5-nm-thick In/sub 0.23/Ga/sub 0.77/As layer was deposited on this multiple-period nanofaceted single GaAs surface in a single-run growth. Orientation-dependent migration and incorporation (ODMI) of In atoms [mass transport of incident In atoms from the (n11) to adjacent [100] facets] results in a variation of x of the In/sub x/Ga/sub 1-x/As layer section on the [100] facet as the width of the [100] facet was changed from /spl sim/20 to /spl sim/200 nm. ODMI induces a higher x on the [100] facet for smaller p. The PL exhibits a polarization dependence which is more pronounced for decreasing p [i.e., the width of [100] facet]. Consistent variations of the PL peak energy and linear polarization along the pattern direction confirm that ODMI results in a variation of the In composition and imply that the In/sub x/Ga/sub 1-x/As layer on a [100] facet has characteristics of a quantum wire as its width is decreased to /spl sim/20 nm for p = 210 nm. A possible application of nanopatterned growth to wavelength-division-multiplexing transmitters is discussed.