Zn <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.80</sub> Cd <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.20</sub> O/Zn <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.92</sub> Cd <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.08</sub> O multiple quantum-well (MQW) light-emitting diodes (LEDs) on <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</i> -type 4H-SiC substrates, using remote-plasma-enhanced metal-organic chemical vapor deposition, have been fabricated and characterized. Band-edge green electroluminescence (EL) at 500 nm has been obtained. The ZnCdO MQW LEDs show a rectifying current-voltage behavior with a turn-on voltage of 6.0 V. The integrated EL intensity linearly increases with increasing injection current density up to 1.9 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Furthermore, the presence of an EL blue-shift of 20 nm with increasing current and a large EL spectral width in comparison to PL are discussed in terms of Cd compositional fluctuations.