Multifunctional Optoelectronic Devices Research Articles

Self-Powered Infrared-Detectable BP/Ta2NiS5 Heterojunction and Its Application in Energy-Efficient Optoelectronic Synapses.

The development of energy-efficient and high-performance optoelectronic devices is crucial for the advancement of modern optoelectronic and microelectronic systems. Although the self-powered devices and optoelectronic synapses based on 2D heterojunction show great application prospects, the high energy consumption and infrared band detection of self-powered optoelectronic synapses are still an urgent problem to be solved. In this report, a BP/Ta2NiS5 heterojunction is constructed to achieve infrared detection by leveraging differences in Fermi energy levels. This heterojunction exhibits a high specific detectivity of 6.57×1010, 2.6×1010, and 1.12×1010 Jones and responsivity of 20, 10.6, and 5.9mAW-1 for 1064, 1550, and 2200nm infrared light at 0 bias voltage, respectively. In addition, under the 2200nm light, by applying an ultra-low bias voltage of 800µV, the heterojunction exhibits ultra-low power and energy consumption of 28.8pW and 0.64pJ, successfully simulates a variety of synaptic behaviors under infrared light, and demonstrates its image perception and image memory capabilities. These findings position the BP/Ta2NiS5 heterojunction as an ideal candidate for a multifunctional optoelectronic device crucial for advanced photodetection, neuromorphic computing, and artificial intelligence.

Multifunctional optoelectronic devices based on two-dimensional tellurium/MoS2 heterojunction

Two-dimensional van der Waals heterojunctions consisted of p–n-type semiconductors have been rapidly developed owing to their built-in electric field which can facilitate the separation of photogenerated electron–hole pairs and properties like current rectification and negative differential transconductance. Benefitting from these advantages, we have prepared an air-stable multifunctional p-tellurium (Te)/n-MoS2 heterostructure working both as a self-driven broadband photodetector and as an optically switchable complementary metal-oxide-semiconductor inverter. For photodetection, this device exhibits wavelength-modulated positive/negative optical response with large responsivity (1.51 A/W at 520 nm and 642.92 mA/W at 1550 nm, Vds = 0 V) and fast response speed, showcasing its prospects for optical encoding communication. Moreover, the device has been demonstrated to function as an inverter that will be shut down by illumination. Our multifunctional device possesses the compactness of integrated modules, widens the application scope of Te-based heterojunctions, and provides a reference for the application of Te-based devices in the field of integrated circuits.

Two-in-one functionality in a 28 × 28 β-Ga2O3 array: bias-voltage switching between photodetection and neuromorphic vision

Due to the differences in photoresponse characteristics between photodetectors and neuromorphic vision sensors (NVS), simultaneously achieving these two powerful functionalities on a single device poses significant challenges. Here, we demonstrate a two-in-one platform based on a 28 × 28 β-Ga2O3 array that seamlessly switches between photodetector and NVS modes via bias voltage control. By exploiting the differential carrier capture dynamics of deep-level oxygen vacancies in Ga2O3, our device exhibits conventional photoconductivity at low voltages and persistent photoconductivity at high voltages. This enables high-quality optoelectronic imaging as well as excellent image sensing, memory, and neuromorphic visual preprocessing capabilities within a single integrated platform. This work paves the way for multifunctional Ga2O3 optoelectronic devices with applications in integrated sensing and computing.

Dual-Electrically Configurable MoTe2/In2S3 Phototransistor toward Multifunctional Applications.

Photodetectors, essential for a wide range of optoelectronic applications in both military and civilian sectors, face challenges in balancing responsivity, detectivity, and response time due to their inherent unidirectional carrier transport mechanism. Multifunctional photodetectors that address these trade-offs are highly sought after for their potential to reduce costs, simplify system design, and surpass Moore's Law limitations. Herein, we present a multimodal phototransistor based on a 2D MoTe2/In2S3 heterostructure. Through dual electrical modulation employing bias voltage and gate voltage, we engineer the energy band to achieve switchable photoresponse mechanisms between photoconductive and photovoltaic modes. In photoconductive mode, the device exhibits a responsivity of 320 A/W and a specific detectivity of 1.2 × 1013 Jones. Meanwhile, in photovoltaic mode, it exhibits a light on/off ratio of 2 × 105 and response speed of 0.68/0.60 ms. These capabilities enable multifunctional applications such as high-resolution imaging across various wavelengths, a conceptual optoelectronic logic gate, and dual-channel optical communication. This work makes an advancement in the development of future multifunctional optoelectronic devices.

Sliding Ferroelectricity Induced Ultrafast Switchable Photovoltaic Response in ε-InSe Layers.

2D sliding ferroelectric semiconductors have greatly expanded the ferroelectrics family with the flexibility of bandgap and material properties, which hold great promise for ultrathin device applications that combine ferroelectrics with optoelectronics. Besides the induced different resistance states for non-volatile memories, the switchable ferroelectric polarizations can also modulate the photogenerated carriers for potentially ultrafast optoelectronic devices. Here, it is demonstrated that the room temperature sliding ferroelectricity can be used for ultrafast switchable photovoltaic response in ε-InSe layers. By first-principles calculations and experimental characterizations, it is revealed that the ferroelectricity with out-of-plane (OOP) polarization only exists in even layer ε-InSe. The ferroelectricity is also demonstrated in ε-InSe-based vertical devices, which exhibit high on-off ratios (≈104) and non-volatile storage capabilities. Moreover, the OOP ferroelectricity enables an ultrafast (≈3ps) bulk photovoltaic response in the near-infrared band, rendering it a promising material for self-powered reconfigurable and ultrafast photodetector. This work reveals the essential role of ferroelectric polarization on the photogenerated carrier dynamics and paves the way for hybrid multifunctional ferroelectric and optoelectronic devices.

Advanced Electrochromic Energy Storage Devices Based on Conductive Polymers

AbstractAs the demand for multifunctional optoelectronic devices rises, the integration of electrochromic and energy storage functionalities represents a cutting‐edge pursuit in the electrochromic devices domain. The realm of conductive polymer‐based electrochromic energy storage devices (EESDs) stands as a vibrant area marked by ongoing research and development. Despite a plethora of individual research articles exploring various facets within this domain, there exists a conspicuous dearth of comprehensive reviews systematically scrutinizing the advancements, challenges, and potentials intrinsic to these systems. To fill this void, this review systematically outlines the latest progressions in EESDs centered on conductive conjugated polymers (CPs). The review commences with a thorough exploration of the foundational principles underpinning EESDs, encompassing their operational mechanisms, device configurations, and representative key performance indicators. Furthermore, the review categorizes diverse conductive polymers, shedding light on the latest advancements in EESD research utilizing these specific CP variants. This in‐depth analysis centers on their collaborative role in shaping electrochromic energy storage devices. Overall, this review is poised to captivate the interest of researchers toward state‐of‐the‐art CP‐based EESDs, establishing these pioneering technologies as pivotal contenders in defining the forthcoming landscape of wearable electronics, portable devices, and advanced energy storage systems.

High performance ambipolar response photodetectors based on ReS2/PdSe2 van der Waals heterostructures

Anomalous negative photoresponse in a photodetector where the current is reduced under light illumination holds great potential in the application of next-generation novel and multifunctional optoelectronic devices. Until now, the figure of merits for negative photodetectors, such as responsivity and response speed, still exhibit unsatisfactory performance when compared to their positive counterparts. In this work, an unique gate voltage-dependent ambipolar-response photodetector based on the ReS2/PdSe2 heterostructure with excellent characteristics are prepared and investigated systematically. The evolution for concentration of hole in PdSe2 by gate voltage and the trap states existed at the surface and interface play a dominant role in the transition of negative to positive response. The negative photoresponse performances in terms of responsivity, external quantum efficiency (EQE), and response speed under 638 nm light illumination, are as high as about 532 A/W, 105%, and as fast as 7.9/8.7 µs, respectively. Meanwhile, the corresponding values of the positive response also reach to ∼10.5 A/W, ∼2069 %, and ∼30 µs, respectively, demonstrating the superiority of this heterostructure at ambipolar response. In addition, a similar phenomenon is also observed at the near-infrared region (980 nm). The discovery of these results signifies a pronounced breakthrough in the field of ambipolar photodetectors, thereby paving the way for future advancements in optoelectronic applications.

2D Reconfigurable van der Waals Heterojunction for Logic Gate Circuits and Wide-Spectrum Photodetectors via Sulfur Substitution and Band Matching.

The attractive physical properties of two-dimensional (2D) semiconductors in group IVA-VIA have been fully revealed in recent years. Combining them with 2D ambipolar materials to construct van der Waals heterojunctions (vdWHs) can offer tremendous opportunities for designing multifunctional electronic and optoelectronic devices, such as logic switching circuits, half-wave rectifiers, and broad-spectrum photodetectors. Here, an optimized SnSe0.75S0.25 is grown to design a SnSe0.75S0.25/MoTe2 vdWH for logic operation and wide-spectrum photodetection. Benefiting from the excellent gate modulation under the appropriate sulfur substitution and type-II band alignment, the device exhibits reconfigurable antiambipolar and ambipolar transfer behaviors at positive and negative source-drain voltage (Vds), enabling stable XNOR logic operation. It also features a gate-modulated positive and negative rectifying behavior with rectification ratios of 265:1 and 1:196, confirming its potential as half-wave logic rectifiers. Besides, the device can respond from visible to infrared wavelength up to 1400 nm. Under 635 nm illumination, the maximum responsivity of 1.16 A/W and response time of 657/500 μs are achieved at the Vds of -2 V. Furthermore, due to the strong in-plane anisotropic structure of SnSe0.75S0.25-alloyed nanosheet and narrow bandgap of 2H-MoTe2, it shows a broadband polarization-sensitive function with impressive photocurrent anisotropic ratios of 15.6 (635 nm), 7.0 (808 nm), and 3.7 (1310 nm). The direction along the maximum photocurrent can be reconfigurable depending on the wavelengths. These results indicate that our designed alloyed SnSe0.75S0.25/MoTe2 vdWH has reconfigurable logic operation and broadband photodetection capabilities in 2D multifunctional integrated circuits.

Preparation of brittle ITO microstructures using Laser-Induced forward transfer technology

The performance of transparent conductive microstructures plays a significant role in determining the device efficiency. The fabrication of ITO microstructures on the flexible optoelectronic devices remains challenging because of the high-temperature processing requirements and brittleness of the ceramic material. This paper highlights a three-dimensional microfabrication technique that combines sacrificial layer etching and laser-induced transfer. By studying the donor material thickness and the laser energy density, control of the sacrificial layer transfer thrust was achieved to yield an optimal microstructure performance. Different shapes of ITO transparent conductive microstructures were fabricated on polydimethylsiloxane (PDMS) surfaces, demonstrating structural integrity, visible light transmittances > 90 %, and resistivities of ≤ 8 × 10−4 Ω·cm. Finite element analysis was employed to simulate the impact transfer of the donor material onto the receiving substrate, thereby elucidating the energy-absorbing protective role of the flexible PDMS layer. Effective control of the transfer force was identified as a crucial factor in achieving the successful transfer of brittle films. This high-precision and rapid array processing approach meets the demands of automated batch manufacturing, indicating its potential for use in patterned processing on flexible substrates, as an alternative to lithographic techniques. This technique could be applied in the preparation of electronic skins and flexible devices. Additionally, for the first time, a 3 × 3 pixel resistive array sensor was integrated on a Ag nanowires/PDMS surface, demonstrating array pressure-sensing capabilities at pressures of 0–80 kPa. This study represents a significant step towards the development of multifunctional flexible optoelectronic devices.

MXene-based all-solid flexible electrochromic microsupercapacitor

With the increasing demand for multifunctional optoelectronic devices, flexible electrochromic energy storage devices are being widely recognized as promising platforms for diverse applications. However, simultaneously achieving high capacitance, fast color switching and large optical modulation range is very challenging. In this study, the MXene-based flexible in-plane microsupercapacitor was fabricated via a mask-assisted spray coating approach. By adding electrochromic ethyl viologen dibromide (EVB) into the electrolyte, the device showed a reversible color change during the charge/discharge process. Due to the high electronic conductivity of the MXene flakes and the fast response kinetics of EVB, the device exhibited a fast coloration/bleaching time of 2.6 s/2.5 s, a large optical contrast of 60%, and exceptional coloration efficiency. In addition, EVB acted as a redox additive to reinforce the energy storage performance; as a result, the working voltage window of the Ti3C2-based symmetric aqueous microsupercapacitor was extended to 1 V. Moreover, the device had a high areal capacitance of 12.5 mF cm−2 with superior flexibility and mechanical stability and showed almost 100% capacitance retention after 100 bending cycles. The as-prepared device has significant potential for a wide range of applications in flexible and wearable electronics, particularly in the fields of camouflage, anticounterfeiting, and displays.

In2O3/ZnO heterojunction thin film transistor for high recognition accuracy neuromorphic computing and optoelectronic artificial synapses

Solid electrolyte-gated transistors exhibit improved chemical stability and can fulfill the requirements of microelectronic packaging. Typically, metal oxide semiconductors are employed as channel materials. However, the extrinsic electron transport properties of these oxides, which are often prone to defects, pose limitations on the overall electrical performance. Achieving excellent repeatability and stability of transistors through the solution process remains a challenging task. In this study, we propose the utilization of a solution-based method to fabricate an In2O3/ZnO heterojunction structure, enabling the development of efficient multifunctional optoelectronic devices. The heterojunction’s upper and lower interfaces induce energy band bending, resulting in the accumulation of a large number of electrons and a significant enhancement in transistor mobility. To mimic synaptic plasticity responses to electrical and optical stimuli, we utilize Li+-doped high-k ZrO x thin films as a solid electrolyte in the device. Notably, the heterojunction transistor-based convolutional neural network achieves a high accuracy rate of 93% in recognizing handwritten digits. Moreover, our research involves the simulation of a typical sensory neuron, specifically a nociceptor, within our synaptic transistor. This research offers a novel avenue for the advancement of cost-effective three-terminal thin-film transistors tailored for neuromorphic applications.

In Situ Synthesis of CsPbX3/Polyacrylonitrile Nanofibers with Water-Stability and Color-Tunability for Anti-Counterfeiting and LEDs.

Inorganic CsPbX3 (X = Cl, Br, I) perovskite quantum dots (PQDs) have attracted widespread attention due to their excellent optical properties and extensive application prospects. However, their inherent structural instability significantly hinders their practical application despite their outstanding optical performance. To enhance stability, an in situ electrospinning strategy was used to synthesize CsPbX3/polyacrylonitrile composite nanofibers. By optimizing process parameters (e.g., halide ratio, electrospinning voltage, and heat treatment temperature), all-inorganic CsPbX3 PQDs have been successfully grown in a polyacrylonitrile (PAN) matrix. During the electrospinning process, the rapid solidification of electrospun fibers not only effectively constrained the formation of large-sized PQDs but also provided effective physical protection for PQDs, resulting in the improvement in the water stability of PQDs by minimizing external environmental interference. Even after storage in water for over 100 days, the PQDs maintained approximately 93.5% of their photoluminescence intensity. Through the adjustment of halogen elements, the as-obtained composite nanofibers exhibited color-tunable luminescence in the visible light region, and based on this, a series of multicolor anti-counterfeiting patterns were fabricated. Additionally, benefiting from the excellent water stability and optical performance, the CsPbBr3/PAN composite film was combined with red-emitting K2SiF6:Mn4+ (KSF) on a blue LED (460 nm), producing a stable and efficient WLED device with a color temperature of around 6000 K and CIE coordinates of (0.318, 0.322). These results provide a general approach to synthesizing PQDs/polymer nanocomposites with excellent water stability and multicolor emission, thereby promoting their practical applications in multifunctional optoelectronic devices and advanced anti-counterfeiting.

Dual Optoelectronic Organic Field-Effect Device: Combination of Electroluminescence and Photosensitivity.

Merging the functionality of an organic field-effect transistor (OFET) with either a light emission or a photoelectric effect can increase the efficiency of displays or photosensing devices. In this work, we show that an organic semiconductor enables a multifunctional OFET combining electroluminescence (EL) and a photoelectric effect. Specifically, our computational and experimental investigations of a six-ring thiophene-phenylene co-oligomer (TPCO) revealed that this material is promising for OFETs, light-emitting, and photoelectric devices because of the large oscillator strength of the lowest-energy singlet transition, efficient luminescence, pronounced delocalization of the excited state, and balanced charge transport. The fabricated OFETs showed a photoelectric response for wavelengths shorter than 530 nm and simultaneously EL in the transistor channel, with a maximum at ~570 nm. The devices demonstrated an EL external quantum efficiency (EQE) of ~1.4% and a photoelectric responsivity of ~0.7 A W-1, which are among the best values reported for state-of-the-art organic light-emitting transistors and phototransistors, respectively. We anticipate that our results will stimulate the design of efficient materials for multifunctional organic optoelectronic devices and expand the potential applications of organic (opto)electronics.

Boosting Bidirectional Photoresponse with Wavelength Selectivity through Ambipolar Transport Modulation

AbstractNegative photoconductive phototransistors, referring to transistors that exhibit a decrease in photocurrent under illumination, have the potential to revolutionize optoelectronic applications involving light, such as optoelectronic logic circuits and visual neural simulation. Currently, achieving negative photoconductivity (NPC) requires complex material design or interface structure construction. However, achieving precise control over NPC behaviors poses a significant challenge. Herein, a simple yet effective strategy is demonstrated for realizing controllable NPC responses in organic phototransistors through ambipolar transport modulation. Due to the controversy between the preferred exciton dissociation/charge separation direction and the gate electric field driven charge drift direction, the main semiconductor channel (n‐ or p‐channel) exhibits NPC behavior under illumination. The validity of this mechanism has been confirmed through intensive studies by varying the component and combination of the p‐n heterostructure. Moreover, devices utilizing ambipolar transport exhibit a wavelength‐selectivity NPC response due to the absorption characteristics of the combined semiconductor materials. Most encouragingly, by incorporating both negative and positve photoconductivity along with wavelength‐selective responses, high‐contrast image sensing, information encryption and decryption, as well as optoelectronic logic circuit design is successfully achieved. This work promotes the design and development of bidirectional optoelectronic devices and offers a new route for developing attractive multifunctional optoelectronic devices.

β-Ga2O3 van der Waals p-n homojunction

The van der Waals (vdW) p-n junctions are crucial to develop multifunctional and high-performance electronic and optoelectronic devices. The asymmetric doping effect in wide-bandgap (WBG) semiconductors poses a fundamental obstacle for fabricating the vdW p-n homojunction and impedes the development of full WBG semiconductors-based bipolar devices. In this study, we demonstrate the β-Ga2O3 vdW p-n homojunctions with 2.0 nm-thick vdW gap, 2.6 eV built-in potential and 1.5 μm-wide depletion region, via combining quasi-two-dimensional n-type β-Ga2O3 nanosheets with p-type β-Ga2O3 films. Various tunneling transports including direct tunneling, Fowler-Nordheim tunneling, and exciton-assisted tunnelling are observed and explored in detail. The β-Ga2O3 vdW p-n homojunction diodes possess high forward current density (3.0 × 10−3 A/cm2), extremely-low reverse leakage current density (3.0 × 10−9 A/cm2), high rectification ratio (106 under dark and 107 under illumination), high photoresponsivity (13.4 A/W) and detectivity (9.38 × 1013 Jones) at 10 V bias under 250 nm illumination, and narrowband detection for the deep-ultraviolet solar-blind spectral region. This work lays the foundation for β-Ga2O3 homogeneous bipolar vdW devices and paves the way to advance the next-generation electronic and optoelectronic multifunctional devices based on the vdW integration.

Perovskite/organic tandem device to realize light detection and emission dual function

Developing highly integrated smart optoelectronic systems is vital to modern technology, yet critically challenging. This study introduces a tandem device that incorporates an organic photodiode (OPD) and a perovskite light emitting diode (PeLED), enabling simultaneous light detection and emission in one compact device, prepared by all-solution fabrication process. It shows that precise control of interfacial properties plays a critical role in establishing the all-solution processed OPD/PeLED multi-layered dual-function device which is critical for charge transport, recombination, and generation. The integrated structure allows for light detection and emission function selectively by controlling the polarity of the external bias. The optoelectronic performance of the dual-function tandem device is comparable to that of the discrete control OPD and PeLED, i.e., the tandem device achieves a responsivity of 94 mA/W at 850 nm under −1 V and a luminance result of 1319 cd/m2 at 516 nm under 7 V, which is comparable to 101 mA/W and 1983 cd/m2 for the control OPD and PeLED operated under the same conditions. This work demonstrates the promising properties of the monolithically integrated dual-functional device and its potential for application in health monitoring and wearable electronic devices.

Gate Voltage- and Bias Voltage-Tunable Staggered-Gap to Broken-Gap Transition Based on WSe2/Ta2NiSe5 Heterostructure for Multimode Optoelectronic Logic Gate.

Two-dimensional (2D) materials with superior properties exhibit tremendous potential in developing next-generation electronic and optoelectronic devices. Integrating various functions into one device is highly expected as that endows 2D materials great promise for more Moore and more-than-Moore device applications. Here, we construct a WSe2/Ta2NiSe5 heterostructure by stacking the p-type WSe2 and the n-type narrow gap Ta2NiSe5 with the aim to achieve a multifunction optoelectronic device. Owing to the large interface potential barrier, the heterostructure device reveals a prominent diode feature with a large rectify ratio (7.6 × 104) and a low dark current (10-12 A). Especially, gate voltage- and bias voltage-tunable staggered-gap to broken-gap transition is achieved on the heterostructure device, which enables gate voltage-tunable forward and reverse rectifying features. As results, the heterostructure device exhibits superior self-powered photodetection properties, including a high detectivity of 1.08 × 1010 Jones and a fast response time of 91 μs. Additionally, the intrinsic structural anisotropy of Ta2NiSe5 endows the heterostructure device with strong polarization-sensitive photodetection and high-resolution polarization imaging. Based on these characteristics, a multimode optoelectronic logic gate is realized on the heterostructure via synergistically modulating the light on/off, polarization angle, gate voltage, and bias voltage. This work shed light on the future development of constructing high-performance multifunctional optoelectronic devices.

Multifunctional Phototransistor Based on Double Van der Waals Heterojunction with Reversed Band Edge Bending

AbstractDouble van der Waals heterojunctions (vdWHs) based on 2D materials showcase multifunctional properties, including anti‐ambipolar behavior and polarization‐sensitive photodetection capabilities, providing a new degree of freedom for the development of next‐generation integrated electronics and optoelectronics. Herein, this work reports an anti‐ambipolar transistor with high polarized photosensitivity based on MoS2/Ta2NiS5/WSe2 double vdWH with back‐to‐back type‐I band alignment. It demonstrates a noticeable negative differential transconductance with an ultrahigh peak‐to‐valley ratio of 4.3 × 104 and a bidirectional transconductance variation from 41.6 to −17.5 nS when VD = 2 V. It is ascribed to the effective gate‐modulation of the reversed band edge bending at the double vdWH interfaces. Additionally, the structure benefits from a photogating effect and the anisotropic Ta2NiS5 interlayer, achieving a peak responsivity of 120.58 A W−1 and a decent specific detectivity of 2.65 × 1012 Jones at VD = 2 V and Vg = 5 V and exhibiting an exceptional photocurrent anisotropic ratio of 15.31 via the photovoltaic effect under 635 nm light. These findings not only expand the potential applications of the advanced 2D Ta2NiS5 material but also offer valuable insights for the development of multifunctional optoelectronic devices leveraging 2D double vdWHs.

Universal Design and Efficient Synthesis for High Ambipolar Mobility Emissive Conjugated Polymers.

High ambipolar mobility emissive conjugated polymers (HAME-CPs) are perfect candidates for organic optoelectronic devices, such as polymer light emitting transistors. However, due to intrinsic trade-off relationship between high ambipolar mobility and strong solid-state luminescence, the development of HAME-CPs suffers from high structural and synthetic complexity. Herein, a universal design principle and simple synthetic approach for HAME-CPs are developed. A series of simple non-fused polymers composed of charge transfer units, π bridges and emissive units are synthesized via a two-step microwave assisted C-H arylation and direct arylation polymerization protocol with high total yields up to 61 %. The synthetic protocol is verified valid among 7 monomers and 8 polymers. Most importantly, all 8 conjugated polymers have strong solid-state emission with high photoluminescence quantum yields up to 24 %. Furthermore, 4 polymers exhibit high ambipolar field effect mobility up to 10-2 cm2 V-1 s-1, and can be used in multifunctional optoelectronic devices. This work opens a new avenue for developing HAME-CPs by efficient synthesis and rational design.

Universal Design and Efficient Synthesis for High Ambipolar Mobility Emissive Conjugated Polymers

AbstractHigh ambipolar mobility emissive conjugated polymers (HAME‐CPs) are perfect candidates for organic optoelectronic devices, such as polymer light emitting transistors. However, due to intrinsic trade‐off relationship between high ambipolar mobility and strong solid‐state luminescence, the development of HAME‐CPs suffers from high structural and synthetic complexity. Herein, a universal design principle and simple synthetic approach for HAME‐CPs are developed. A series of simple non‐fused polymers composed of charge transfer units, π bridges and emissive units are synthesized via a two‐step microwave assisted C−H arylation and direct arylation polymerization protocol with high total yields up to 61 %. The synthetic protocol is verified valid among 7 monomers and 8 polymers. Most importantly, all 8 conjugated polymers have strong solid‐state emission with high photoluminescence quantum yields up to 24 %. Furthermore, 4 polymers exhibit high ambipolar field effect mobility up to 10−2 cm2 V−1 s−1, and can be used in multifunctional optoelectronic devices. This work opens a new avenue for developing HAME‐CPs by efficient synthesis and rational design.