Two mechanisms of the effect of the transition state of building particles (activated complexes according to S. Arrhenius) on the crystal growth rate within the framework of the fluctuation model of dislocation crystal growth are discussed. Transition state clusters adsorbed on the surface of the growing face perform the function of an impurity that lowers the surface energy of the crystal at the time moments between free energy fluctuations. Thus, the transition state of the crystallizing substance by the first mechanism affects the relaxation rate of the secondary adsorption of impurities and shortens the time period of attachment of building particles to the crystal face. Other clusters formed in solution reduce the number of free particles and under conditions of low concentration of the building substance are able to decrease the crystallization rate. Nevertheless, in a natural multicomponent crystallization environment, at low concentrations of building material, significant thermal effect of crystallization and small deviations from equilibrium, the role of the transition state in crystal growth is generally insignificant.