Multi-resistance States Research Articles

Effect of oxygen content and superconductivity on the nonvolatile resistive switching in YBa2Cu3O6+x/Nb-doped SrTiO3 heterojunctions

The authors report on the resistive switching effect in YBa2Cu3O6+x/Nb-doped SrTiO3 heterojunctions. The current-voltage curves of these heterojunctions show hysteresis, which increases with decreasing temperature and oxygen content. Multiresistance states are realized by voltage pulses with different amplitudes. The relaxation of the junction current after switching follows the Curie–Von Schweidler law. More interestingly, the resistance of the low resistance state for the heterojunction shows a metallic behavior with a remarkable drop at Tc. The results were discussed in terms of the trapping-detrapping process via oxygen vacancies near the interface of the heterojunction and the conducting filaments through the junction barrier.

Resistance switching driven by polarity and voltage of electric pulse in AgLa0.7Ca0.3MnO3Pt sandwiches

Materials showing reversible resistance switching at room temperature are attractive for today’s semiconductor technology with its wide interest in nonvolatile random access memories. In this letter, the switching between the high resistance state (OFF-state) and the low resistance state (ON-state) was demonstrated, which depends on both polarity and magnitude of the applied electric pulse. Such a phenomenon could be useful for various magnetic and electric device applications. A “conductance channel” model is proposed to explain the observed effect. This mechanism is supported by the experimental data obtained from the multi-resistance states measured synchronously.