Multi-level Cell Spin-transfer Torque RAM Research Articles

A cache consolidation design of MLC STT-RAM for energy efficiency enhancement on cyber-physical systems

Owing to the energy-constraint nature of cyber-physical systems (CPS), energy efficiency has become a primary design consideration for CPS. On CPS, owing to the high leakage power issue of SRAM, the major portion of its energy consumption comes from static random-access memory (SRAM)-based processors. Recently, with the emerging and rapidly evolving nonvolatile Spin-Transfer Torque RAM (STT-RAM), STT-RAM is expected to replace SRAM within processors for enhancing the energy efficiency with its near-zero leakage power features. The advances in Magnetic Tunneling Junction (MTJ) technology also realize the multi-level cell (MLC) STT-RAM to pack more cells with the same die area for achieving the memory density. However, the write disturbance issue of MLC STT-RAM prevents STT-RAM from properly resolving the energy efficiency of CPS. Although studies have been proposed to alleviate this issue, previous strategies could induce additional management overhead due to the use of counters or lead to frequent swap operations. Such an observation motivates us to propose an effective and simple strategy to combine direct and split cache mapping designs to enhance the energy efficiency of MLC STT-RAM. A series of experiments have been conducted on an open-source emulator with encouraging results.

Exploring Applications of STT-RAM in GPU Architectures

Use of modern GPUs has been extended from traditional 3D graphic processing to computing acceleration of many scientific, engineering, and enterprise applications. In modern GPUs, on-chip memory capacity keeps increasing to support thousands of chip-resident threads. For example, a large register file is needed in order to efficiently process highly-parallel threads in single instruction multiple thread (SIMT) fashion, and a large shared memory is often implemented to allow data sharing among the threads on the chip. On-chip memory capacity of GPUs, however, is highly constrained by large memory cell area and high static power consumption of conventional SRAM implementation. In this work, we propose to utilize the emerging multi-level cell (MLC) spin-transfer torque RAM (STT-RAM) technology to implement register file and shared memory in GPUs. Compared to SRAM, MLC STT-RAM (or MLC-STT) has a much smaller cell area as well as ultra-low standby power, thanks to the non-volatility of MLC-STT technology. Hence, the footprint and leakage power of the implemented memory components are substantially reduced. Moreover, in light of asymmetric performance of soft and hard bits of a MLC-STT cell, we propose a dynamic data remapping strategy in register file and shared memory implementations that allows a flexible tradeoff between the memory access time and the available capacity: frequently-accessed data is always mapped to the fast rows built with the soft bits of the MLC-STT cells while the slow rows composed of the hard bits are used only when a larger capacity is critically needed. We also develop a novel rescheduling scheme to minimize the waiting time of the issued warps to access register banks in the register file, which is induced by the long writeback operations through the reordering of the issued warps. Finally, an early termination technology is also applied to save the write energy of the shared memory if the bits of the memory do not flip. Experimental results on benchmarks of ISPASS2009, Rodinia, Parboil, and CUDA show that on average, MLC-STT register file can achieve 3.28% system performance improvement, 9.48% energy reduction, and 38.9% energy efficiency improvement compared to conventional SRAM-based design. Meanwhile, MLC-STT shared memory leads to 3.45% system performance improvement, 49.3% energy reduction, and 116% energy efficiency improvement.

TSE: Two-Step Elimination for MLC STT-RAM Last-Level Cache

Spin-transfer torque RAM (STT-RAM) is an emerging non-volatile memory that has been recognized as the potential candidate to replace SRAM. Compared with SRAM, STT-RAM has advantages of non-volatility, zero leakage power, and higher density. To further improve data density, multi-level cell (MLC) STT-RAM that can store two bits per cell has been proposed. However, writing hard bit of a cell would write its soft bit to the same value as well, which complicates the write operation of MLC STT-RAM. Although two-step transition (TT) is usually adopted to ensure the data correctness during a write operation, it incurs overhead of additional energy consumption and performance degradation. In this article, we propose the two-step elimination (TSE) scheme to eliminate TTs while ensure data integrity. By flipping hard bits of the cells that suffered from TTs, the TSE scheme could reduce TTs to soft transitions (STs) or zero transitions (ZTs), which incur much less overhead than TTs. To keep track of the flipped cells effectively, 6-bit TSE tag is introduced. We exploit tag reversing and advanced mode of the TSE scheme to further improve the performance. The experimental results showed that our scheme could reduce 61 percent TTs and achieve significant lifetime improvement, compared with conventional MLC STT-RAM (CMLC) scheme.

A Restore-Free Mode for MLC STT-RAM Caches

Spin-transfer torque RAM (STT-RAM) caches are foreseen to replace traditional static RAM caches because of their nonvolatile nature and high density. Multilevel cell (MLC) STT-RAMs further enhance the storage density of single-level cell STT-RAMs. However, the two-step read/write process in MLC STT-RAMs adversely affects performance, energy consumption, and lifetime. Moreover, technology scaling makes the read operations disturb the stored data in MLC STT-RAMs, giving rise to an issue called read disturbance (RD). Restore operations, which are required to cope with RD, further add to the problems of using MLCs. In this brief, we propose a Restore-free mode for frequently reused cache lines in MLC STT-RAMs that leverages single-step read/write operations to the MLC without the need for restore operations. Our proposed scheme in single-core (quad-core) systems, achieves a 27.4% (23%) dynamic energy reduction, a 3.7% (7%) increase in performance, and an 81% (62.5%) lifetime improvement.

Periodic learning-based region selection for energy-efficient MLC STT-RAM cache

The emerging multi-level cell (MLC) spin-transfer torque RAM (STT-RAM) is becoming one of the most promising candidates to replace SRAM as on-chip last-level caches. Compared with single-level cell (SLC) STT-RAM design, MLC cache outperforms SLC cache in terms of storage capacity. However, due to the cell design constrains, MLC STT-RAM suffers from considerably long write latency and high write energy. To explore the potential benefits of MLC STT-RAM cache, this paper proposes a scheme named periodic learning-based region selection (PLRS). We first formulate the region selection problem with greedy algorithm and then profile and collect the cache access behavior through periodic learning. Finally, PLRS will determine region selection based on the behavior information. The experimental results show that PLRS reduces dynamic energy consumption by 22.7% and reduces execution time by 16.2% on average compared to conventional MLC STT-RAM, with negligible overhead.

Performance and Power-Efficient Design of Dense Non-Volatile Cache in CMPs

In this paper, we present a novel cache design based on Multi-Level Cell Spin-Transfer Torque RAM (MLC STT-RAM) that can dynamically adjust the set capacity and associativity to efficiently use the full potential of MLC STT-RAM technology. We exploit the asymmetric nature of the MLC storage scheme to build cache lines featuring heterogeneous performances, that is, half of the cache lines are read-friendly, while the other half are write-friendly. Furthermore, we propose to opportunistically deactivate cache ways in underutilized sets to convert MLC to Single-Level Cell (SLC) mode, which features overall better performance and lifetime. Our ultimate goal is to build a cache architecture that combines the capacity advantages of MLC and performance/energy advantages of SLC. Our experimental evaluations show an average improvement of 43 percent in total numbers of conflict misses, 27 percent in memory access latency, 12 percent in system performance, and 26 percent in L3 access energy, with a slight degradation in lifetime (about 7 percent) compared to an SLC cache.

A Study on Performance and Power Efficiency of Dense Non-Volatile Caches in Multi-Core Systems

This paper presents a novel cache design based on Multi-Level Cell Spin-Transfer Torque RAM (MLC STT-RAM).Our design exploits the asymmetric nature of the MLC STT-RAM to build cache lines featuring heterogeneous performances, that is, half of the cache lines are read-friendly,while the other half are write-friendly--this asymmetry in read/write latencies are then used by a migration policy in order to overcome the high latency of the baseline MLC cache. Furthermore, in order to enhance the device lifetime, we propose to dynamically deactivate ways of a set in underutilized sets to convert MLC to Single-Level Cell (SLC)mode.Our experiments show that our design gives an average improvement of 12% in system performance and 26% in last-level cache(L3) access energy for various workloads.

CWC: A Companion Write Cache for Energy-Aware Multi-Level Spin-Transfer Torque RAM Cache Design

Due to its large leakage power and low density, the conventional SARM becomes less appealing to implement the large on-chip cache due to energy issue. Emerging non-volatile memory technologies, such as phase change memory (PCM) and spin-transfer torque RAM (STT-RAM), have advantages of low leakage power and high density, which makes them good candidates for on-chip cache. In particular, STT-RAM has longer endurance and shorter access latency over PCM. There are two kinds of STT-RAM so far: single-level cell (SLC) STT-RAM and multi-level cell (MLC) STT-RAM. Compared to the SLC STT-RAM, the MLC STT-RAM has higher density and lower leakage power, which makes it a even more promising candidate for future on-chip cache. However, MLC STT-RAM improves density at the cost of almost doubled write latency and energy compared to the SLC STT-RAM. These drawbacks degrade the system performance and diminish the energy benefits. To alleviate these problems, we propose a novel cache organization, companion write cache (CWC), which is a small fully associative SRAM cache, working with the main MLC STT-RAM cache in a master-and-servant way. The key function of CWC is to absorb the energy-consuming write updates from the MLC STT-RAM cache. The experimental results are promising that CWC can greatly reduce the write energy and dynamic energy, improve the performance and endurance of MLC STT-RAM cache compared to a baseline.

On-chip caches built on multilevel spin-transfer torque RAM cells and its optimizations

It has been predicted that a processor's caches could occupy as much as 90% of chip area a few technology nodes from the current ones. In this article, we investigate the use of multilevel spin-transfer torque RAM (STT-RAM) cells in the design of processor caches. We start with examining the access (read and write) scheme for multilevel cell (MLC) STT-RAM from a circuit design perspective, detailing the read and write circuits. Compared to traditional SRAM caches, a multilevel cell (MLC) STT-RAM cache design is denser, fast, and requires less energy. However, a number of critical architecture-level issues remain to be solved before MLC STT-RAM technology can be deployed in processor caches. We shall offer solutions to the issue of bit encoding as well as tackle the write endurance problem. In particular, the latter has been neglected in previous works on STT-RAM caches. We propose a set remapping scheme that can potentially prolong the lifetime of a MLC STT-RAM cache by 80× on average. Furthermore, a method for recovering the performance that may be lost in some applications due to set remapping is proposed. The impacts of process variations of the MLC STT-RAM cell on the robustness of the memory hierarchy is also discussed, together with various enhancement techniques, namely, ECC and design redundancy.