MPS Diodes Research Articles

Fabrication and Testing of 1,000V-60A 4H-SiC MPS Diodes in an Inductive Half-Bridge Circuit

Fabrication and Testing of 1,000V-60A 4H-SiC MPS Diodes in an Inductive Half-Bridge Circuit

Photovoltaic effect of a metal/porous silicon/silicon structure

This Letter shows that MPS diodes are serially connected by a M/PS Schottky junction and a PS/P-Si heterojunction with a different photosensitivity. The Fermi level increases to nearly the center of the band gap during the conversion from P-Si to PS. The band gap diagram of a MPS diode is also presented.