Domain Wall Motion Research Articles

Laser Melting of Mechanically Alloyed FeNi: A Study of the Correlation between Microstructure and Texture with Magnetic and Physical Properties.

The current study attempts to establish the interrelation between microstructure and magnetic properties induced during laser melting of the FeNi alloy. This study demonstrates the optimization of laser parameters for defect-free, uniform, and chemically homogeneous FeNi alloy synthesis. Mechanically alloyed FeNi (50-50 atom %) powders obtained after 12 and 24 h milling, with average particle sizes of 15 and 7 μm, were used as starting materials. It was found that the optimum range of laser power density for synthesis of dense and defect-free solids is between 1 and 1.4 J/mm2. For laser melting under similar conditions, 12 h milled FeNi powder produces a larger grain (∼100 μm) with a preferred texture of (001), compared to 25 μm grain size in 24 h milled FeNi, with random texture. Smaller grain size is correlated with higher resistance to domain wall movement, resulting in higher coercivity and remanence in the laser-melted samples prepared from 24 h of milled powder. The presence of microtexture in laser-melted samples prepared from 12 h milled powder is related to a higher anisotropy.

Quantum Barkhausen noise induced by domain wall cotunneling

Most macroscopic magnetic phenomena (including magnetic hysteresis) are typically understood classically. Here, we examine the dynamics of a uniaxial rare-earth ferromagnet deep within the quantum regime, so that domain wall motion, and the associated hysteresis, is initiated by quantum nucleation, which then grows into large-scale domain wall motion, which is observable as an unusual form of Barkhausen noise. We observe noncritical behavior in the resulting avalanche dynamics that only can be explained by going beyond traditional renormalization group methods or classical domain wall models. We find that this "quantum Barkhausen noise" exhibits two distinct mechanisms for domain wall movement, each of which is quantum-mechanical, but with very different dependences on an external magnetic field applied transverse to the spin (Ising) axis. These observations can be understood in terms of the correlated motion of pairs of domain walls, nucleated by cotunneling of plaquettes (sections of domain wall), with plaquette pairs correlated by dipolar interactions; this correlation is suppressed by the transverse field. Similar macroscopic correlations may be expected to appear in the hysteresis of other systems with long-range interactions.

Contribution of irreversible non-180° domain to performance for multiphase coexisted potassium sodium niobate ceramics

Despite the dominance of lead-based piezoelectric materials with ultrahigh electric-field-induced strain in actuating applications, seeking eco-friendly substitutes with an equivalent performance remains an urgent demand. Here, a strategy of regulating the irreversible non-180° domain via phase engineering is introduced to optimize the available strain (the difference between the maximum strain and the remnant strain in a unipolar strain curve) in the lead-free potassium–sodium niobate-based piezoelectric ceramics. In situ synchrotron X-ray diffraction and Rayleigh analysis reveal the contribution of the non-180° domain to available strain in the tetragonal–orthorhombic–rhombohedral phase boundary. The reducing orthorhombic phase and increasing rhombohedral/tetragonal phase accompanied by the reduced irreversible non-180° domain are obtained with increasing doping of Sb5+, resulting in an enlarged available strain due to the significantly lowered remnant strain. This optimization is mainly attributed to the reduced irreversible non-180° domain wall motion and the increased lattice distortion, which are beneficial to decrease extrinsic contribution and enhance intrinsic contribution. The mesoscopic structure of miniaturized nanosized domain with facilitated domain switching also contributes to the enhancement of available strain due to the improved random field and decreased energy barrier. The study will shed light on the design of lead-free high-performance piezoelectric ceramics for actuator applications.

Fabrication of single-crystalline YFeO3 films with large antiferromagnetic domains

The antiferromagnetic orthoferrite YFeO3 possesses fascinating magnetic properties for spintronics, such as terahertz spin dynamics, ultrafast domain wall motion, and long magnon decay length. YFeO3 belongs to a special family of antiferromagnets that show an unusually strong non-trivial Kerr response due to its weak ferromagnetism. The highly stable antiferromagnetic domains without any spontaneous spin rotation transitions below the 645 K Néel temperature may be useful for nanoscale device applications. We report the successful fabrication of high-quality twinning-free (110)-oriented YFeO3 films by pulsed laser deposition. Detailed structural and magnetic characterization revealed that the crystal structure and magnetic properties of the YFeO3 films are comparable to bulk single crystals. We show that the spin rotation under high magnetic fields follows the two-sublattice approximation model. The film surface is atomically flat with step-terrace surface morphology. A longitudinal magneto-optic Kerr (MOKE) rotation of 10 mdeg was observed at room temperature, which is consistent with earlier reports on bulk single crystals. The in-plane anisotropy of the Kerr response corresponds to the obtained magnetic anisotropy from the SQUID measurement. The large MOKE signal enables the imaging of antiferromagnetic domains and their reversal. The domain size was found to be larger than 100 μm. These high-quality YFeO3 thin films facilitate the fabrication of antiferromagnetic spintronic devices and provide a convenient platform for studying various spin-related phenomena in thin films and at interfaces.

Abrupt increase of stochastic behavior in domain-wall motion near depinning field

The domain-wall motion in ferromagnetic films exhibits stochastic behavior due to thermal agitation with quenched disorders. The stochasticity is an obstacle in the sense of consistent repeatability of domain-wall position control in magnetic domain-wall devices. In general, the level of stochasticity is expected to decrease as driving force increases. This property suggests that the magnetic domain-wall devices are capable of simultaneously achieving both high operational speed and decrease in the level of stochasticity. However, we report here an observation of stochasticity anomaly, which involves a significant increase in relative speed dispersion near the depinning field. Domain-wall motion measurements were performed in ferromagnetic wires with perpendicular magnetic anisotropy over the same position to measure the relative speed dispersion. The stochasticity in domain-wall motion is intertwined with the number of pinning–depinning events throughout the domain-wall motion. The size of cluster events, which leads to the number of events, reflects the trend in the relative speed dispersion. The observed anomaly is provided by occurrence of large avalanches of cluster events. The anomaly occurs within the tech-relevant speed range of 1–100 m/s, signaling the necessity of material engineering to mitigate its effects.

Control of a twisted domain wall motion supported by topology

We report the topology-mediated modulation of a twisted domain wall speed in a thick perpendicularly magnetized system. By exploiting the topological robustness of the direction of the Bloch wall component in the twisted domain wall, we show that the domain wall speed either increases or decreases depending on whether the transverse magnetic field is parallel or antiparallel to the Bloch wall component. The decrease in the speed is maintained until the antiparallel transverse reaches ∼0.3 T, indicating that the twisted domain wall can offer wide controllability supported by the topological robustness which involves an injection of a Bloch point. We also demonstrate that the transverse magnetic field suppresses the Walker breakdown, allowing high mobility domain wall motion for a wide range of perpendicular driving fields.

Excellent temperature stability of piezoelectric properties in PbNb2O6‐based ceramics up to 450°C

AbstractDense (Pb0.92Ba0.08)Nb2O6‐xmol% MnO2 with 0.25 wt% TiO2 ceramics with a single orthorhombic phase were synthesized through a conventional solid‐state reaction method. Excellent piezoelectric performance (d33 = 90 pC/N) and low dielectric loss (tan δ = 0.5%) are achieved in Mn‐doped samples. Interestingly, the dielectric anomalies are observed in the temperature range of 300–400°C, which could be completely suppressed through Mn doping. The dielectric anomalies are associated with thermally activated domain wall motion, which could be constrained by the defect dipoles produced by Mn doping. More importantly, all samples experience about 12% performance degradation below 300°C, attributed to an accelerated aging process at elevated temperatures. After thermal aging, the samples exhibit excellent performance stability within the temperature range of 25–450°C, showing no further degradation. The results indicate that the PbNb2O6‐based ceramics are promising high‐temperature piezoelectric materials for piezoelectric devices operating at temperatures up to 450°C.

Self-assembly of Co/Pt stripes with current-induced domain wall motion towards 3D racetrack devices

Modification of the magnetic properties under the induced strain and curvature is a promising avenue to build three-dimensional magnetic devices, based on the domain wall motion. So far, most of the studies with 3D magnetic structures were performed in the helixes and nanowires, mainly with stationary domain walls. In this study, we demonstrate the impact of 3D geometry, strain and curvature on the current-induced domain wall motion and spin-orbital torque efficiency in the heterostructure, realized via a self-assembly rolling technique on a polymeric platform. We introduce a complete 3D memory unit with write, read and store functionality, all based on the field-free domain wall motion. Additionally, we conducted a comparative analysis between 2D and 3D structures, particularly addressing the influence of heat during the electric current pulse sequences. Finally, we demonstrated a remarkable increase of 30% in spin-torque efficiency in 3D configuration.

Estimation of the interfacial Dzyaloshinskii–Moriya interaction in all-metallic multilayer with perpendicular magnetic anisotropy

The interfacial Dzyaloshinskii–Moriya (iDMI) interaction which arises at the interface between a heavy metal (HM) and a ferromagnet (FM) can stabilize chiral Néel type domain walls in ultrathin perpendicularly magnetized multilayers. Dissimilar HMs are required on both bottom and top sides of the FM layer in order to introduce the structural inversion asymmetry which ensures an effective iDMI in the FM layer. HMs like Pt, Ir, Ta etc are very well known for developing large iDMI in the interface with Co, whereas noble metals like Au can produce negligible iDMI. Therefore, a multilayer Pt/Co/Au is chosen to determine the individual iDMI in the Pt/Co interface. Some procedures like field-induced domain wall motion study, spin–orbit torque efficiency estimation study are well established to quantify the effective field due to the iDMI ( HDMI ) which in turn gives the strength of the iDMI ( Deff ). Besides these procedures, a current-induced switching of magnetization was studied to construct a switching phase diagram where the critical current density of magnetization switching has been plotted as a function of the applied in-plane magnetic field. The experimentally constructed diagram and the simulated diagram using a micromagnetic study have revealed the possibility to quantify HDMI . Thus, a systematic and unified estimation of Deff has been done on all-metallic Ta/Pt/Co/Au multilayers.

Bending strain–induced changes in perpendicular magnetic properties of Pt/Co/Pt films on flexible substrates

We studied the irreversible changes in the perpendicular magnetic properties of Pt(2.2 nm)/Co(0.8 nm)/Pt(2.2 nm) films deposited on a flexible polyethylene terephthalate substrate with bending deformation. The changes in the magnetic properties of the Pt/Co/Pt film with deformation were analyzed using magneto-optical Kerr-effect microscopy. The film was bent in one direction using cylindrical rods or semicylindrical grooves of different radii and then restored to the initial flat state. No significant changes in the magnetic properties due to bending strain were observed below a critical bending curvature. However, for bending curvatures above +0.25 mm−1 or below −0.14 mm−1, the magnetic domain shape changed from circular to elongated ellipses, perpendicular to the bending direction, and the coercivity of the film increased by 10%–30%. Furthermore, the domain wall motion exhibited a distinct anisotropic behavior, with ∼12-fold difference in the velocity of domain wall motion in different directions. Conclusively, the magnetic properties of the Pt/Co/Pt film fabricated on a flexible substrate exhibited irreversible changes beyond a critical deformation of +2.44% or −1.37%.

Spin–orbit torque true random number generator with thermal stability

Interfacial Dzyaloshinskii–Moriya interaction (DMI) plays a pivotal role in spin–orbit torque (SOT)-induced magnetization switching, notably seen in deterministic switching even in the absence of an external magnetic field at 0 K. However, in SOT devices operating at room temperature, thermal fluctuations contribute significantly to magnetization switching due to the altered energy profile caused by DMI. In this work, we unveil that unlike the deterministic magnetization switching observed at 0 K, SOT-induced magnetization switching assisted by DMI is highly stochastic. Following the SOT-induced nucleation of a domain wall (DW), thermal fluctuations can induce rapid back-and-forth DW motion under the influence of a current pulse, resulting in stochastic switching. Furthermore, our findings indicate that the switching probability remains stable as the temperature increases. These results illustrate that SOT-induced magnetization switching assisted by DMI is well-suited for a true random number generator with robust thermal stability.

Magnetization reversal and coercivity mechanism in ferrimagnetic M-type hexaferrite by controlling phase evolution

The correlation of phase evolution (annealing at different temperatures) with magnetic properties like magnetization reversal, coercivity mechanism, and energy product in M-type hexaferrite by substituting Sr in place of Ba has been reported in the present article. The Ba1-xSrxFe12O19 (x = 0.0, 0.5, & 1.0) have been prepared by the sol–gel auto-combustion method followed by annealing at different temperatures from 800 °C to 1200 °C. The structural and magnetic properties have been characterized by X-ray diffraction, Field emission scanning electron microscopy, Raman spectroscopy, and Vibrating sample magnetometer. The Rietveld refinement confirms contraction in unit cell parameters by replacing Sr in place of Ba and lattice expansion with increasing annealing temperature. There is no significant effect of substitution on magnetic properties found rather heat treatment affects greatly. The transition from a single domain to multidomain particles and their contribution to initial magnetization curves are analyzed. The differential susceptibility (dM/dH) calculated from room temperature magnetization confirms the existence of a pinning effect during magnetization reversal for samples heat treated below 1200 °C. Secondary phases or grain boundaries are believed to act like pinning centers. This work opens insight into the domain wall motion by microstructure engineering. The coercivity is tuned to 6.09 kOe by controlling the annealing temperature for the Ba1-xSrxFe12O19 (x = 1.0) sample. The maximum energy product (BH)max in the range of 0.94–1.27 MGOe has been achieved.

Contribution of Magnetization Mechanisms in MnZn Ferrites with Different Grain Sizes and Sintering Densification

This study investigates the magnetization mechanisms in MnZn ferrites, which are key materials in high-frequency power electronics, to understand their behavior under various sintering conditions. Employing X-ray diffraction and scanning electron microscopy, we analyzed the microstructure and phase purity of ferrites sintered at different temperatures. Our findings confirm consistent spinel structures and highlight significant grain-growth and densification variabilities. Magnetic properties, particularly the saturation magnetization (Ms) and initial permeability (μi), were explored, revealing their direct correlation with the sintering process. The decomposition of magnetic spectra into domain-wall-motion and spin-rotation components offered insights into the dominant magnetization mechanisms, with the domain wall movement becoming increasingly significant at higher sintering temperatures. The samples sintered at 1310 °C showcased superior permeability and the least loss in our investigations. This research underscores the impact of sintering conditions on the magnetic behavior of MnZn ferrites, providing valuable guidelines for optimizing their magnetic performance in advanced electronic applications and contributing to the material science field’s understanding of the interplay between sintering, microstructures, and magnetic properties.

Electromechanical hardening of Na1/2Bi1/2TiO3-based ceramics by the in-situ formed secondary phase

One of the primary challenges in high-power devices is the issue of heating, which is caused by energy loss resulting from domain wall motion. To address this problem, our study established a electromechanical hardening approach by integrating NiO into Na1/2Bi1/2TiO3 (NBT). This method leads to the in-situ formation of the second phase within grains and between the grain boundaries. The second phase inside the grains inhibits the domain wall motion and reduces the mechanical loss, resulting in a considerable increase in mechanical quality factor (Qm) by over 80%. Additionally, the introduction of NiO notably enlarges the grain size by more than 4.5 times. The combination of the second phase and the increased grain size synergistically preserves piezoelectric coefficients (d33). Our study uncovers an innovative method to enhance Qm without significantly compromising d33.

Multistate Compound Magnetic Tunnel Junction Synapses for Digital Recognition.

The quest to mimic the multistate synapses for bioinspired computing has triggered nascent research that leverages the well-established magnetic tunnel junction (MTJ) technology. Early works on the spin transfer torque MTJ-based artificial neural network (ANN) are susceptible to poor thermal reliability, high latency, and high critical current densities. Meanwhile, work on spin-orbit torque (SOT) MTJ-based ANN mainly utilized domain wall motion, which yields negligibly small readout signals differentiating consecutive states and has designs that are incompatible with technological scale-up. Here, we propose a multistate device concept built upon a compound MTJ consisting of multiple SOT-MTJs (number of MTJs, n = 1-4) on a shared write channel, mimicking the spin-based ANN. The n + 1 resistance states representing varying synaptic weights can be tuned by varying the voltage pulses (±1.5-1.8 V), pulse duration (100-300 ns), and applied in-plane fields (5.5-10.5 mT). A large TMR difference of more than 13.6% is observed between two consecutive states for the 4-cell compound MTJ, a 4-fold improvement from reported state-of-the-art spin-based synaptic devices. The ANN built upon the compound MTJ shows high learning accuracy for digital recognition tasks with incremental states and retraining, achieving test accuracy as high as 95.75% in the 4-cell compound MTJ. These results provide an industry-compatible platform to integrate these multistate SOT-MTJ synapses directly into neuromorphic architecture for in-memory and unconventional computing applications.

Monitoring the Velocity of Domain Wall Motion in Magnetic Microwires.

An approach was proposed to control the displacement of domain walls in magnetic microwires, which are employed in magnetic sensors. The velocity of the domain wall can be altered by the interaction of two magnetic microwires of distinct types. Thorough investigations were conducted utilizing fluxmetric, Sixtus-Tonks, and magneto-optical techniques. The magneto-optical examinations revealed transformation in the surface structure of the domain wall and facilitated the determination of the mechanism of external influence on the movement of domain walls in magnetic microwires.

Consistency between domain wall oscillation modes and spin wave modes in nanostrips

Investigations on domain wall (DW) and spin wave (SW) modes in a series of nanostrips with different widths and thicknesses have been carried out using micromagnetic simulation. The simulation results show that the frequencies of SW modes and the corresponding DW modes are consistent with each other if they have the same node number along the width direction. This consistency is more pronounced in wide and thin nanostrips, favoring the DW motion driven by SWs. Further analysis of the moving behavior of a DW driven by SWs is also carried out. The average DW speed can reach a larger value of ∼140 m/s under two different SW sources. We argue that this study is very meaningful for the potential application of DW motion driven by SWs.

Kinetics of N- to M-Polar Switching in Ferroelectric Al1-xScxN Capacitors.

Ferroelectric wurtzite-type aluminum scandium nitride (Al1-xScxN) presents unique properties that can enhance the performance of non-volatile memory technologies. The realization of the full potential of Al1-xScxN requires a comprehensive understanding of the mechanism of polarization reversal and domain structure dynamics involved in the ferroelectric switching process. In this work, transient current integration measurements performed by a pulse switching method are combined with domain imaging by piezoresponse force microscopy (PFM) to investigate the kinetics of domain nucleation and wall motion during polarization reversal in Al0.85Sc0.15N capacitors. In the studied electric field range (from 4.4 to 5.6MVcm-1), ferroelectric switching proceeds via domain nucleation and wall movement. The currently available phenomenological models are shown to not fully capture all the details of the complex dynamics of polarization reversal in Al0.85Sc0.15N. PFM reveals a non-linear increase of both domain nucleation rate and lateral wall velocity during the switching process, as well as the dependency of the domain pattern on the polarization reversal direction. A continuously faster N- to M-polar switching upon cycling is reported and ascribed to an increasing number of M-polar nucleation sites and density of domain walls.

Strain‐controlled dynamics of transverse domain walls in hybrid piezoelectric–magnetostrictive heterostructures: An asymptotic approach

AbstractThe present work deals with an analytical study of the statical and dynamical behavior of transverse magnetic domain walls in hybrid bilayer piezoelectric/magnetostrictive heterostructures under the combined influence of spin‐polarized electric currents, transverse, and axial applied magnetic fields. The magnetostrictive material is considered to be isotropic and linearly elastic. We perform the investigation within the framework of the one‐dimensional Landau–Lifshitz–Gilbert equation. By employing the regular perturbation asymptotic expansion approach, we derive the explicit analytical expression of the most significant dynamic features, namely, traveling wave profile, DW velocity, and displacement under the influence of small and moderate transverse magnetic fields. Finally, we illustrate numerically the analytical results and delineate the domain wall motion for metallic and semiconductor ferromagnets.

Microscopic insights on field induced switching and domain wall motion in orthorhombic ferroelectrics

Microscopic insights on field induced switching and domain wall motion in orthorhombic ferroelectrics