Monolayer MoS2 Research Articles

Proximity-Induced Exchange Interaction and Prolonged Valley Lifetime in MoSe2/CrSBr Van-Der-Waals Heterostructure with Orthogonal Spin Textures.

Heterostructures, composed of semiconducting transition-metal dichalcogenides (TMDC) and magnetic van-der-Waals materials, offer exciting prospects for the manipulation of the TMDC valley properties via proximity interaction with the magnetic material. We show that the atomic proximity of monolayer MoSe2 and the antiferromagnetic van-der-Waals crystal CrSBr leads to an unexpected breaking of time-reversal symmetry, with originally perpendicular spin directions in both materials. The observed effect can be traced back to a proximity-induced exchange interaction via first-principles calculations. The resulting spin splitting in MoSe2 is determined experimentally and theoretically to be on the order of a few meV. Moreover, we find a more than 2 orders of magnitude longer valley lifetime of spin-polarized charge carriers in the heterostructure, as compared to monolayer MoSe2/SiO2, driven by a Mott transition in the type-III band-aligned heterostructure.

Strain-Engineered Ferroelectricity in 2H Bilayer MoS2.

The exploration of two-dimensional (2D) materials exhibiting out-of-plane ferroelectric and piezoelectric properties through interlayer twist/translation or strain, known as sliding ferroelectricity, has become a focal point in the quest for low-power electronic devices, capitalizing on weak van der Waals interactions. Herein, we delve into the behavior of strained bilayer molybdenum disulfide (2L-MoS2) transferred onto a nanocone-patterned substrate. An intriguing observation is the emergence of unexpected vertical ferroelectricity in MoS2, irrespective of whether it was prepared using chemical vapor deposition or mechanical exfoliation from the bulk crystal. Such an observation underscores the versatility and reproducibility of the emerging ferroelectricity across different preparation methods. Furthermore, the piezoelectric coefficients recorded are exceptionally high, with the values of 37.54 and 24.80 pm V-1 for monolayer and bilayer MoS2, respectively, outperforming most currently discovered 2D piezoelectrics. The presence of room-temperature out-of-plane ferroelectricity in strained 2L-MoS2 is confirmed through first-principles calculations and piezoresponse force microscopy. This ferroelectric behavior can be attributed to the symmetry breaking and interlayer sliding within the strained 2L-MoS2 structure. Our findings not only deepen the understanding of ferroelectricity in 2D materials but also offer insights for the design of 2D ferroelectrics, thereby enabling diverse functionalities and applications in ferroelectricity.

Improved Gas Sensing Properties of Copper-Doped MoSe2 Monolayers: A First-Principles Study on CO2 and NO2 Adsorption

Abstract This paper investigates the impact of copper (Cu)-doped MoSe2 monolayer(ML) on gas sensing properties. The adsorption behaviour of CO2 and NO2 gas molecules on Cu-doped MoSe2 ML is reported and various sensing and electronic parameters such as adsorption energy, charge transfer and recovery time, are computed to delineate the adsorption characteristics and gas sensitivity. In our study, the doped Cu-atom in Se vacant MoSe2 ML shows the adsorption energies to be -1.32 eV (O-orient) and -1.72 eV (C-orient), for CO2 while for NO2, they are -0.879 eV (O-orient) and -1.06 eV (N-orient), respectively. The negative formation energy of -6.62 eV shows the electronic stability of Cu-doped MoSe2 ML and thermal stability is shown by the molecular dynamics study through the Nose-Vervlet Thermostat (NVT) algorithm. Also, significant changes are observed in electronic conductivity and work function upon adsorbed Cu-MoSe2 ML. Lastly, these outcomes illustrate that Cu doping amplifies the capture ability of MoSe2 ML towards gas molecules, fostering improved electron interaction between the substrate surface and gas molecules, consequently enhancing its gas sensing ability.

Layer Number and Stacking Engineering of MoS2 Crystals for High-Performance Polarization-Sensitive Photodetector.

The layer and stacking engineering of two-dimensional (2D) transition-metal dichalcogenides (TMDs) gives rise to novel phenomena and multiapplications; thus, TMDs have garnered considerable attention. However, the precisely customized fabrication of stacked 2D materials to date is largely limited to the lack of effective and controllable growth strategies, prone to the unpredictable stacking orders and randomly distributed nucleation sites. Here, we devise an optimized chemical vapor deposition approach for modulating the MoS2 single crystals from monolayer to multilayer with diverse stacking configurations. Significantly, the phototransistor based on monolayer MoS2 single crystal exhibits an ultrasensitive performance with a high photoresponsivity (R) of 3.3 × 104 A W-1 and a remarkable detectivity (D*) of above 1.7 × 1014 Jones at 405 nm light illumination. Ultralow-frequency and angle-resolved polarized Raman spectroscopy is used to systematically uncover the delicate interlayer interactions and crystallographic anisotropy. Moreover, the polarization-sensitive photodetectors using 1-3L MoS2 show a layer number-dependent anisotropic performance, with dichroism ratios of 1.36, 1.44, and 1.52. This work offers a promising method to not only enable the fabrication of new customized layer-, stacking-, and twist-2D materials but also provides the foundation for the development of advanced polarization-sensitive and optoelectronic devices based on stacking transitions.

Local Strain-Dependent Etching Patterns of Chemical Vapor Deposited Molybdenum Disulfide.

This study reveals a local strain-dependent etching behavior that enables the formation of distinguished etching patterns in differently strained chemical vapor deposited (CVD) 2D molybdenum disulfide (MoS2) monolayers. It is demonstrated that when the local tensile strain of CVD 2D MoS2 is as uniformly low as ɛ ≈ 0.33% or less, the oxidative etching pattern possesses conventional triangular etching pits (TEPs), while when the local tensile strain is as uniformly high as ɛ ≈ 0.55% or larger, the oxidative etching pattern consist of uniformly oriented hexagonal etching channels (HECs). More interestingly, when the CVD 2D MoS2 monolayer has heterogenous strain distribution from ɛ ≈ 0.55% (center region) to ɛ ≈ 0.33% (perimeter region), the oxidative etching pattern comprise of non-uniformly hexagonal-mixed-parallel etching channels (HPECs). The further characterization and analysis reveal the formation mechanism of such strain-dependent etching patterns is built on the local strain-related fractures propagation under oxidative etching, as well as the anisotropy fractures-based oxidative etching kinetics. This study may enhance the understanding of the relationship between etching and growth features of 2D TMDs, and paves the way to etching-nanostructured (or defect) engineering of 2D TMDs and other 2D materials for potential applications in electrocatalysis and optoelectronics.

Accelerating Optimal Synthesis of Atomically Thin MoS2: A Constrained Bayesian Optimization Guided Brachistochrone Approach

AbstractA machine learning (ML) guided approach is presented for the accelerated optimization of chemical vapor deposition (CVD) synthesis of 2D materials toward the highest quality, starting from low‐quality or unsuccessful synthesis conditions. Using 26 sets of these synthesis conditions as the initial training dataset, our method systematically guides experimental synthesis towards optoelectronic‐grade monolayer MoS2 flakes. A‐exciton linewidth (σA) as narrow as 38 meV could be achieved in 2D MoS2 flakes after only an additional 35 trials (reflecting 15% of the full factorial design dataset for training purposes). In practical terms, this reflects a decrease of the possible experimental time to optimize the parameters from up to one year to about two months. This remarkable efficiency was achieved by formulating a constrained sequencing optimization problem solved via a combination of constraint learning and Bayesian Optimization with the narrowness of σA as the single target metric. By employing graph‐based semi‐supervised learning with data acquired through a multi‐criteria sampling method, the constraint model effectively delineates and refines the feasible design space for monolayer flake production. Additionally, the Gaussian Process regression effectively captures the relationships between synthesis parameters and outcomes, offering high predictive capability along with a measure of prediction uncertainty. This method is scalable to a higher number of synthesis parameters and target metrics and is transferrable to other materials and types of reactors. This study envisions that this method will be fundamental for CVD and similar techniques in the future.

Monolayer MoS2 and WS2 for Vertical Circular‐ Polarized‐Light‐Emitting Diode: from Fundamental Understanding to Device Architecture

AbstractLight‐emitting diodes (LEDs) have revolutionized lighting and displays due to their numerous advantages over conventional lighting mechanisms. Moreover, the directional nature of luminescent materials has spurred significant advancements in the development of circularly polarized LEDs, which hold transformative potential for applications in biomedical imaging, liquid crystal displays, spintronics, and valleytronics. The performance of circularly polarized LEDs mainly depends on the emitter material, which is this study's focus. In particular, semiconducting‐phase 2D monolayer MoS2 and WS2 are attractive emitter‐material candidates owing to their bandgap versatility, high carrier mobility, high exciton binding energy, polarized‐light‐emission properties, and unique spin–valley coupling. Several works have examined the fundamental light‐emission properties of monolayer MoS2 and WS2 from the perspectives of optoelectronic concepts, material fabrication, and device construction. This paper presents approaches to control, tune, and enhance these properties of monolayer MoS2 and WS2. Possible guidelines for monolayer‐material synthesis (top‐down and bottom‐up approaches) and device engineering of vertically stacked MoS2 and WS2 are presented. Finally, the review considers the material topological characteristics, outlines the challenges and potential of monolayer MoS2 and WS2 for developing high‐performance commercial circularly polarized LED devices, and proposes a technological roadmap for leveraging other monolayer transition metal dichalcogenide systems in optoelectronic devices.

A theoretical insight into the adsorption behavior of organic molecules on MoS2 monolayer

AbstractThe adsorption stage is crucial in sensing performance and photoreaction on material surfaces. This study investigates volatile organic compounds (VOC) adsorption on MoS2 monolayer using first‐principle calculations. The adsorption configurations are stabilized by H···S hydrogen bonds and C/O···S intermolecular interactions. The process of molecules attached to MoS2 is evaluated as weak physical adsorption and decreases in ordering 1‐propanol > isopentane > acetone > propenal ≈ ethylamine. Besides, AIM analysis indicates that the H···S and C/O···S contacts are weak interactions and are non‐covalent in nature. The intermolecular hyper‐conjugation energy values resulting from the NBO approach determine the stronger hydrogen bonds of H···S in comparison to C/O···S interactions. Remarkably, the gas sensing response of the MoS2 monolayer for VOC molecules is observed theoretically. The sensing responses of gas molecules on the MoS2 monolayer are achieved considerably, up to 99.80% for ethylamine, 97.96% for acetone, and 18–32% for the remaining gases. The MoS2 monolayer is expected to be a suitable sensing material for VOC.

Strongly Enhanced Electronic Bandstructure Renormalization by Light in Nanoscale Strained Regions of Monolayer MoS2/Au(111) Heterostructures.

Understanding and controlling the photoexcited quasiparticle (QP) dynamics in monolayer (ML) transition metal dichalcogenides (TMDs) lays the foundation for exploring the strongly interacting, nonequilibrium two-dimensional (2D) QP and polaritonic states in these quantum materials and for harnessing the properties emerging from these states for optoelectronic applications. In this study, scanning tunneling microscopy/spectroscopy (STM/scanning tunneling spectroscopy) with light illumination at the tunneling junction is performed to investigate the QP dynamics in ML MoS2 on an Au(111) substrate with nanoscale corrugations. The corrugations on the surface of the substrate induce nanoscale local strain in the overlaying ML MoS2 single crystal, which result in energetically favorable spatial regions where photoexcited QPs, including excitons, trions, and electron-hole plasmas, accumulate. These strained regions exhibit pronounced electronic bandstructure renormalization as a function of the photoexcitation wavelength and intensity as well as the strain gradient, implying strong interplay among nanoscale structures, strain, and photoexcited QPs. In conjunction with the experimental work, we construct a theoretical framework that integrates nonuniform nanoscale strain into the electronic bandstructure of a ML MoS2 lattice using a tight-binding approach combined with first-principle calculations. This methodology enables better understanding of the experimental observation of photoexcited QP localization in the nanoscale strain-modulated electronic bandstructure landscape. Our findings illustrate the feasibility of utilizing nanoscale architectures and optical excitations to manipulate the local electronic bandstructure of ML TMDs and to enhance the many-body interactions of excitons, which is promising for the development of nanoscale energy-adjustable optoelectronic and photonic technologies, including quantum emitters and solid-state quantum simulators for interacting exciton polaritons based on engineered periodic nanoscale trapping potentials.

Unconventional pairing in Ising superconductors: application to monolayer NbSe2

Abstract The presence of a non-centrosymmetric crystal structure and in-plane mirror symmetry allows an Ising spin–orbit coupling to form in some two-dimensional materials. Examples include transition metal dichalcogenide superconductors like monolayer NbSe2, MoS2, TaS2, and PbTe2, where a nontrivial nature of the superconducting state is currently being explored. In this study, we develop a microscopic formalism for Ising superconductors that captures the superconducting instability arising from a momentum-dependent spin- and charge-fluctuation-mediated pairing interaction. We apply our pairing model to the electronic structure of monolayer NbSe2, where first-principles calculations reveal the presence of strong paramagnetic fluctuations. Our calculations provide a quantitative measure of the mixing between the even- and odd-parity superconducting states and its variation with Coulomb interaction. Further, numerical analysis in the presence of an external Zeeman field reveals the role of Ising spin–orbit coupling and mixing of odd-parity superconducting state in influencing the low-temperature enhancement of the critical magnetic field.

Stark effect in MoSe<sub>2</sub> monolayer heterostructure

The effect of a vertical electric field on photoluminescence of a MoSe2 monolayer encapsulated with hexagonal boron nitride is investigated. In the spectra, there is a quadratic shift of the photoluminescence lines of excitons and trions from the applied potential difference, as well as a change in their intensity. It is found that the magnitude of the Stark shift significantly exceeds the theoretically predicted one. It is found that the energy distance between the trion and exciton lines in the spectra varies with the magnitude of the external field, which is due to the dependence of the density of free charge carriers in the monolayer on the field. This effect made it possible to determine the density of free charge carriers in the monolayer, which varies with the field and lies in the range from 0.3–3.4⋅1012 cm–2.

Comparative analysis of thermoelectric properties in bulk 2H and monolayer MoS2: a first-principles study at high temperatures

The pursuit of high-efficiency heat-to-electricity conversion is one of the indispensable driving forces toward future renewable energy production. The two-dimensional (2D) transition metal dichalcogenide, such as molybdenum disulfide (MoS2), is at the forefront of research due to its outstanding heat propagation features and potential applications as a thermoelectric material. Using the first-principles density functional theory coupled with the semi-classical Boltzmann transport equation within the constant relaxation time approximation, we present the thermoelectric and energy transport in the bulk 2H and monolayer MoS2 material system. In order to advance the underlying physics, we calculate several crucial transport parameters such as electrical conductivity, electronic thermal conductivity, Seebeck coefficient, and power factor as a function of the reduced chemical potential for different doping types and temperatures, in addition to the electron energy dispersion relation of the material system. Our comprehensive study employs the Shankland interpolation algorithm and the rigid band approximation to attain a high degree of accuracy. This thorough investigation reveals the high Seebeck coefficient of 1534 and 1550 μ V/K at 500 K for the bulk 2H and monolayer MoS2, respectively. Furthermore, the ultrahigh power factor values of 9.21 × 1011 and 3.69 × 1011 Wm −1 K −2 s −1 are shown at 800 K in the bulk 2H and monolayer MoS2, respectively. Based on the power factor results, our in-depth analysis demonstrates that the bulk 2H MoS2, when compared to monolayer MoS2, exhibits great potential as a promising semiconducting thermoelectric material for advanced high-performance energy device applications.

Mechanisms of Controllable Growth and Ohmic Contact of Two-Dimensional Molybdenum Disulfide: Insight from Atomistic Simulations.

ConspectusTwo-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs), in particular molybdenum disulfide (MoS2), have recently attracted huge interest due to their proper bandgap, high mobility at 2D limit, and easy-to-integrate planar structure, which are very promising for extending Moore's law in postsilicon electronics technology. Great effort has been devoted toward such a goal since the demonstration of protype MoS2 devices with high room-temperature on/off current ratios, ultralow standby power consumption, and atomic level scaling capacity down to sub-1-nm technology node. However, there are still several key challenges that need to be addressed prior to the real application of MoS2-based electronics technology. The controllable growth of wafer-scale single-crystal MoS2 on industry-compatible insulating substrates is the prerequisite of application while the currently synthesized MoS2 films mostly are polycrystalline with limited sizes of single-crystal domains and may involve metal substrates. The precise layer-control is also very important for MoS2 growth since its electronic properties are layer-dependent, whereas the layer-by-layer growth of multilayer MoS2 dominated by the van der Waals (vdW) epitaxy leads to poor thickness uniformity and noncontinuously distributed domains. High density up to 1013 cm-2 of sulfur vacancies (SVs) in grown MoS2 can cause unfavorable carrier scatting and electronic properties variations and will inevitably disturb the device performance. The dangling-bond-free surface of MoS2 gives rise to an inherent vdW gap at metal-semiconductor (M-S) contact, which leads to high electrical resistance and poor current-delivery capability at the contact interface and thereby substantially limits the performances of MoS2 devices.In this Account, we briefly review recent experimental and theoretical attempts for addressing the aforementioned challenges and present our own insights from atomistic simulations. We theoretically revealed the vital role of substrate steps for guiding unidirectional nucleation of monolayer MoS2 and uniform nucleation and edge-aligned growth of bilayer MoS2 by advanced simulations. The established thermodynamic mechanisms have successfully directed the experimental works on the controllable growth of 2 in. single-crystal monolayer and centimeter-scale uniform bilayer MoS2. The postgrowth repair mechanism of SV defect in MoS2 via thiol chemistry treatment has been theoretically explored with the consideration of side reaction of surface functionalization to help experimentally reduce SV defect density by 75%. Beyond the atomic level understanding, theoretical simulations proposed the electronic states hybridization mechanism across the semimetal-MoS2 vdW interface, thereby guiding experimental effort for realizing Ohmic contact at the MoS2-Sb(0112) vdW interface with record-low contact resistance.These advances provide a sound basis with an atomic-level understanding for addressing the related issues. However, there are still notable gaps in terms of system size and time scale of dynamics between atomistic simulations and experimental observations for the studies of MoS2 growth and interfaces. The combination of multiscale simulations and artificial intelligence technology is expected to narrow these gaps and provide a more insightful understanding of the controllable growth and interfacial properties modulation of MoS2. We conclude the Account with the standing challenges and outlook on future research directions from the theoretical perspective.

Temperature-dependent quantum beats between neutral and charged excitons in monolayer MoSe2

Temperature-dependent quantum beats between neutral and charged excitons in monolayer MoSe2

Quantum tunneling high-speed nano-excitonic modulator

High-speed electrical control of nano-optoelectronic properties in two-dimensional semiconductors is a building block for the development of excitonic devices, allowing the seamless integration of nano-electronics and -photonics. Here, we demonstrate a high-speed electrical modulation of nanoscale exciton behaviors in a MoS2 monolayer at room temperature through a quantum tunneling nanoplasmonic cavity. Electrical control of tunneling electrons between Au tip and MoS2 monolayer facilitates the dynamic switching of neutral exciton- and trion-dominant states at the nanoscale. Through tip-induced spectroscopic analysis, we locally characterize the modified recombination dynamics, resulting in a significant change in the photoluminescence quantum yield. Furthermore, by obtaining a time-resolved second-order correlation function, we demonstrate that this electrically-driven nanoscale exciton-trion interconversion achieves a modulation frequency of up to 8 MHz. Our approach provides a versatile platform for dynamically manipulating nano-optoelectronic properties in the form of transformable excitonic quasiparticles, including valley polarization, recombination, and transport dynamics.

Monolayer MoS[formula omitted] CVD-growth on SiC substrates assisted with KCl

This study examines the growth of molybdenum disulfide (MoS2) on semi-insulating silicon carbide (SI-6H-SiC) substrates using chemical vapor deposition (CVD). Raman and photoluminescence measurements were utilized to characterize pristine and grown with a potassium chloride (KCl) nucleation promoter MoS2. The Raman spectra showed a frequency difference (Δω) of 18.7 cm−1 between the A1g and E2g modes for pristine MoS2, confirming its monolayer nature, while KCl-modified MoS2 exhibited a Δω of 20.4 cm−1. Pristine MoS2 demonstrated compressive strain due to lattice mismatch, with values up to −1.4%, and a low dependency of charge doping shift on Δω. Conversely, KCl-modified MoS2 flakes showed smaller strain, up to −0.4%, and a significant dependency of charge doping shift on Δω. Electrical characterization of 2-Terminal devices indicated a ratio of the high-resistance state to low-resistance state close to 1 for pristine MoS2 and 1.75 for KCl-modified MoS2. Low-temperature photoluminescence measurements suggest that the observed behavior is due to the interaction of MoS2 with KCl.

Understanding Iron-Doping Modulating Domain Orientation and Improving the Device Performance of Monolayer Molybdenum Disulfide.

Domain orientation modulation and controlled doping of two-dimensional (2D) transition-metal dichalcogenides (TMDCs) are two pivotal tasks for synthesizing wafer-scale single crystals and boosting device performances. However, realizing two such targets and uncovering internal physical mechanisms remain daunting challenges. We develop an accurate Fe doping strategy, which enables domain orientation control and electron mobility improvement of monolayer MoS2. By tuning of the Fe dopant dosages, parallel steps with different heights are formed, which induce edge-nucleation of unidirectionally aligned monolayer MoS2. In parallel, Fe doping induces the down shift of the conduction band minimum of monolayer MoS2 and matches well with the work function of an electrode, which reduces Schottky barrier height and delivers ultralow contact resistance (561 Ω μm) and excellent electron mobility (37.5 cm2 V-1 s-1). The modulation mechanism is clarified by combining theory calculations and electronic structure characterizations. This work hereby provides a new paradigm for synthesizing wafer-scale 2D TMDC single crystals and constructing high-performance devices.

Highly selective photocatalytic oxidation of CH4 to CH3OH: A theoretical study

Photooxidation of methane (CH4) in aqueous solution to generate high-value organic compounds is an effective way to replace traditional industrial methods. It is crucial to select catalysts that can avoid competitive reactions and achieve high selectivity. Using first principles calculations, a novel one-dimensional (1D) Ti3C2O2 nanoribbon (NR)/two-dimensional (2D) monolayer MoS2 (MS) heterojunction photocatalyst was ingenious designed in this work, which can achieve the oxidation of CH4 molecules and suppress the execution of competitive reactions. The results indicate that the constructed 1D NR exhibits semiconductor properties and its energy level position meet the requirements of photocatalytic oxidation for CH4. The heterojunction structure composed of NR and MS forms an efficient S-Scheme electron transfer mechanism under illumination, which not only provides sufficient internal driving force for CH4 oxidation, but also effectively avoids the competitive reaction between water molecules and photo-generated holes. Specifically, the photocatalysts exhibits high selectivity and low reaction overpotential for the generation of methanol (CH3OH). This study provides a new perspective for photocatalytic CH4 oxidation and demonstrates the potential application value of 1D MXene in the future field of photocatalysis.

Indirect-To-Direct Bandgap Crossover and Room-Temperature Valley Polarization of Multilayer MoS2 Achieved by Electrochemical Intercalation.

Monolayer (1L) group VI transition metal dichalcogenides (TMDs) exhibit broken inversion symmetry and strong spin-orbit coupling, offering promising applications in optoelectronics and valleytronics. Despite their direct bandgap, high absorption coefficient, and spin-valley locking in K or K' valleys, the ultra-short valley lifetime limits their room-temperature applications. In contrast, multilayer TMDs, with more absorptive layers, sacrifice the direct bandgap and valley polarization upon gaining inversion symmetry from the bilayer structure. It is demonstrated that multilayer molybdenum disulfide (MoS2) can maintain 1) a structure with broken inversion symmetry and strong spin-orbit coupling, 2) a direct bandgap with high photoluminescence (PL) intensity, and 3) stable valley polarization up to room temperature. Through the intercalation of organic 1-ethyl-3-methylimidazolium (EMIM+) ions, multilayer MoS2 not only exhibits layer decoupling but also benefits from an electron doping effect. This results in a hundredfold increase in PL intensity and stable valley polarization, achieving 55% and 16% degrees of valley polarization at 3 K and room temperature, respectively. The persistent valley polarization at room temperature, due to interlayer decoupling and trion dominance facilitated by a gate-free method, opens up potential applications in valley-selective optoelectronics and valley transistors.

Experimental and theoretical investigation on pre-deposited precursor as growth sites for monolayer MoS2 growth by supercritical fluid deposition

The assistance of promoters, Molybdates or alkali metal salts can regulate the nucleation site of MoS2 in chemical vapor deposition. However, the introduction of impurities inevitably reduces the MoS2 quality. Here, we present the growth of monolayer MoS2 by supercritical fluid deposition to pre-deposit Mo(CO)6 precursors as nucleation sites, replacing difficult to clean conventional promoters. Domain-limited homogeneous and heterogeneous reactions occur at nucleation sites, and through optimization of sulfurization parameters, high-quality monolayer MoS2 with about 20 μm domain size can be obtained by growing at 760 °C and 40 sccm argon for 20 min. Monolayer MoS2 coverage ranged from 2.6 % to 39.1 % by regulating dissolution mass in range of 100–400 mg, utilizing the highly soluble Mo(CO)6 in supercritical CO2. Density functional theory calculations show that decarbonylated Mo(CO)6 possesses higher sulfide reactivity. This study provides new insights into the impurity-free controlled site growth of two-dimensional materials.