Abstract
This study examines the growth of molybdenum disulfide (MoS2) on semi-insulating silicon carbide (SI-6H-SiC) substrates using chemical vapor deposition (CVD). Raman and photoluminescence measurements were utilized to characterize pristine and grown with a potassium chloride (KCl) nucleation promoter MoS2. The Raman spectra showed a frequency difference (Δω) of 18.7 cm−1 between the A1g and E2g modes for pristine MoS2, confirming its monolayer nature, while KCl-modified MoS2 exhibited a Δω of 20.4 cm−1. Pristine MoS2 demonstrated compressive strain due to lattice mismatch, with values up to −1.4%, and a low dependency of charge doping shift on Δω. Conversely, KCl-modified MoS2 flakes showed smaller strain, up to −0.4%, and a significant dependency of charge doping shift on Δω. Electrical characterization of 2-Terminal devices indicated a ratio of the high-resistance state to low-resistance state close to 1 for pristine MoS2 and 1.75 for KCl-modified MoS2. Low-temperature photoluminescence measurements suggest that the observed behavior is due to the interaction of MoS2 with KCl.
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