Monolayer Graphene Research Articles

Flat bands and extreme pseudomagnetic fields in monolayer graphene by topography strain engineering

Flat bands and extreme pseudomagnetic fields in monolayer graphene by topography strain engineering

Monolayer graphene/GaN heterostructure photodetector with UV-IR dual-wavelength photoresponses

An ultraviolet-infrared (UV-IR) dual-wavelength photodetector (PD) based on a monolayer (ML) graphene/GaN heterostructure has been successfully fabricated in this work. The ML graphene was synthesized by chemical vapor deposition (CVD) and subsequently transferred onto GaN substrate using polymethylmethacrylate (PMMA). The morphological and optical properties of the as-prepared graphene and GaN were presented. The fabricated PD based on the graphene/GaN heterostructure exhibited excellent rectify behavior by measuring the current–voltage (I–V) characteristics under dark conditions, and the spectral response demonstrated that the device revealed an UV-IR dual-wavelength photoresponse. In addition, the energy band structure and absorption properties of the ML graphene/GaN heterostructure were theoretically investigated based on density functional theory (DFT) to explore the underlying physical mechanism of the two-dimensional (2D)/three-dimensional (3D) hybrid heterostructure PD device. This work paves the way for the development of innovative GaN-based dual-wavelength optoelectronic devices, offering a potential strategy for future applications in the field of advanced photodetection technology.Graphical

High-quality lateral monolayer-multilayer graphene junction formed by selective laser thinning for self-powered photodetection

The formation of an asymmetric junction is key to graphene-based photodetectors of high-sensitive photodetectability, because such a junction can not only facilitate the diffusion or drift of photogenerated carriers but also realize a self-powered operation. Here, a monolayer-multilayer graphene junction photodetector is accomplished by selectively thinning part of a multilayer graphene to a high-quality monolayer. Benefiting from the large photoabsorption cross section of multilayer graphene and strong asymmetry caused by the significant differences in optoelectronic properties between monolayer and multilayer graphene, the monolayer-multilayer graphene junction shows a 7-fold increase in short-circuit photocurrent as compared with that at the monolayer graphene-metal contact in scanning photocurrent images. The asymmetric configuration also enables the photodetector to work at zero bias with minimized dark current noise and stand-by power consumption. Under global illumination with visible light, a photoswitching ratio of 3.4 × 103, a responsivity of 8.8 mA W−1, a specific detectivity of 1.3 × 108 Jones and a response time of 11 ns can be obtained, suggesting a promising photoresponse. Moreover, it is worth mentioning that such a performance enhancement is achieved without compromising the broadband spectral response of graphene photodetector and it is hence applicable for long wavelength spectral range including infrared and terahertz.

Possibility of defective monolayer graphene as potential anode material of metal-ion batteries

The necessitates exploration in the field of rechargeable metal ion batteries demands safe, cost-efficient, and face significant challenges in their development. Defect engineering may be helpful for the ion storage and diffusion in the battery anodes. In this paper, we use density functional theory to investigate the adsorption and diffusion behavior of Li, Mg, and Al atom on single vacancy (SV), Stone-Wales vacancy (SWV), double vacancy (DV) and quadruple vacancy (QV) defective monolayer graphene. It is evident that metal exhibits the strongest adsorption strengthen at the defect center. The DV and QV defective graphene shows the ideal diffusion energy barrier for three metals. Importantly, the QV structure exhibit maximum storage capacities of the 775 mAh/g for Li, 911 mAh/g for Mg, and 1543.4 mAh/g for Al respectively. Additionally, their open-circuit voltages are all in a very safe range. This study can support a strong basis for the experimental research for metal-ion battery anodes.

Tunneling conductance of hybrid bilayer-single graphene junctions

We study the tunneling effect of two different junctions based on graphene. Firstly, we consider gapped monolayer graphene (MLG) bridging AA-bilayer graphene (BLG), and secondly, AB stacking. These two systems display a significant decrease in transmission in both setups, showing the adjustability of conductance through gap size manipulation. Furthermore, we identify distinct characteristics in both stackings, including Fano resonances and Fabry-Pérot-like oscillations. Examining conductance as a function of BLG region width gives away varying peaks in the conductance profile for both stackings, exhibiting diverse periods and shapes. We demonstrate that under specific parameter conditions, tunneling leads to zero conductance, contrasting with the case without bias. The coexistence of gap and bias introduces a complex pattern in conductance peaks, reflecting fluctuations in amplitude and frequency. Notably, our findings indicate that the gap induces a noteworthy shift in the conductance profile in AB stacking, suggesting a modification of electronic properties. In AA stacking, minima are particularly evident in the conductance profile, especially for small bias values.

Ultrafast high-endurance memory based on sliding ferroelectrics.

The persistence of voltage-switchable collective electronic phenomena down to the atomic scale has extensive implications for area- and energy-efficient electronics, especially in emerging nonvolatile memory technology. We investigate the performance of a ferroelectric field-effect transistor (FeFET) based on sliding ferroelectricity in bilayer boron nitride at room temperature. Sliding ferroelectricity represents a different form of atomically thin two-dimensional (2D) ferroelectrics, characterized by the switching of out-of-plane polarization through interlayer sliding motion. We examined the FeFET device employing monolayer graphene as the channel layer, which demonstrated ultrafast switching speeds on the nanosecond scale and high endurance exceeding 1011 switching cycles, comparable to state-of-the-art FeFET devices. These characteristics highlight the potential of 2D sliding ferroelectrics for inspiring next-generation nonvolatile memory technology.

Ultrafast active plasmonic switch based on the broadband high absorption of monolayer graphene with high modulation depth

Optical switches based on plasmonic nanostructures are of great interest due to their high speed performance. To improve the broadband switching performance, a plasmonic design based on metal-insulator-metal (MIM) structure and monolayer graphene (as an active layer) is proposed. In this scheme, the light absorption of the monolayer graphene and the optical bandwidth are increased due to magnetic dipole resonance and magnetic coupling effect. The numerical simulation results of the proposed structure reveal that high absorption is achieved at the wavelength of 1.55 ‌μm which is 67% and 93% for the monolayer graphene and the whole structure, respectively. This structure has a high absorption modulation depth which can be reached nearly 100% around the interband transition position in a wide wavelength range from 1 μm to 2.5 ‌‌‌‌‌μm. Also, regarding its short response time of 10 fs, this structure can be used as an ultrafast switch. In addition, the equivalent circuit model of the structure is derived from the transmission line model (TLM) that its results are in a very good agreement with the numerical simulation results.

Bioinspired low temperature Cu bonding interfaces with interlocked microstructures to achieve high reliability

The reliability of Cu bonding technology in three-dimensional integration packaging is limited by high sintering temperatures and the growth of oxide at the joining interface. Hence, we propose a bionic adhesion interface of creeper sucker on the Cu substrate and covered with monolayer graphene, which increases the shear strength by 3 times compared to the conventional flat Cu substrate. The covered graphene layer effectively inhibits the generation of oxide at the joint interface and maintains a high shear strength after aging at 300 °C for 48 h Nanoscale Cu particles could reduce the chemical potential energy of the substrate surface, and stable bonding was achieved at 200 °C under a pressure of 2 MPa. Molecular dynamics simulation models reveal crystal structure evolution and residual stresses during the sintering process. This work demonstrates that bionic microstructures applied to copper bonding play an important role in interface enhancement, resulting in reliable bonding of Cu substrate at low temperatures. The method proposed here can provide insight into diversified applications including high-power light-emitting diodes soldering, SiC electronic devices, and flexible electrode interconnects.

Observation of the early stages of environmental contamination in graphene by friction force.

Exposure to ambient air contaminates the surface of graphene sheets. Contamination may arise from different sources, and its nature alters the frictional behavior of the material. These changes in friction enable the observation of the early stages of contaminants' adsorption in graphene. Using a friction force microscope, we show that molecular adsorption initiates at the edges and mechanical defects in the monolayer. Once the monolayer is covered, the contaminants spread over the additional graphene layers. With this method, we estimate the contamination kinetics. In monolayer graphene, the surface area covered with adsorbed molecules increases with time of air exposure at a rate of 10-14m2/s, while in bilayer graphene, it is one order of magnitude smaller. Finally, as the contaminants cover the additional graphene layers, friction no longer has a difference concerning the number of graphene layers.

Interlayer Fermi Polarons of Excited Exciton States in Quantizing Magnetic Fields.

The study of exciton polarons has offered profound insights into the many-body interactions between bosonic excitations and their immersed Fermi sea within layered heterostructures. However, little is known about the properties of exciton polarons with interlayer interactions. Here, through magneto-optical reflectance contrast measurements, we experimentally investigate interlayer Fermi polarons for 2s excitons in WSe2/graphene heterostructures, where the excited exciton states (2s) in the WSe2 layer are dressed by free charge carriers of the adjacent graphene layer in the Landau quantization regime. First, such a system enables an optical detection of integer and fractional quantum Hall states (e.g., ν = ±1/3, ±2/3) of monolayer graphene. Furthermore, we observe that the 2s state evolves into two distinct branches, denoted as attractive and repulsive polarons, when graphene is doped out of the incompressible quantum Hall gaps. Our work paves the way for the understanding of the excited composite quasiparticles and Bose-Fermi mixtures.

Unusual spin-triplet superconductivity in monolayer graphene

Unusual spin-triplet superconductivity in monolayer graphene

Optical Transitions 1S–2Px between Lowest States of a Shallow Impurity in Graphene Monolayer

Optical Transitions 1S–2Px between Lowest States of a Shallow Impurity in Graphene Monolayer

Repeated fast selective growth of prepatternable monolayer graphene of electronic quality

Pattern formation is becoming indispensable in many applications of high-quality synthetic graphene. Nevertheless, the use of multiple lithography and etching steps can often degrade the properties of graphene due to residual disorder. Here, we report a facile, selective, and recyclable method for graphene synthesis from acetylene (C2H2) via catalytic chemical vapor deposition on a bimetal catalyst (Cu–Ni alloy). The synergistic pairing of the Cu–Ni alloy and C2H2 facilitates a rapid (ca. 1 min) synthesis of high-quality graphene under an intermediate temperature condition, e.g., 800 °C, that is quite relaxed from the far-flung method based on a Cu–CH4 pair. Prepatterned Cu–Ni alloy not only produces monolayer graphene patterns without any postprocessing but is also detachable from the resultant graphene patterns electrochemically, hinting at catalyst recyclability. Our test device of an organic field-effect transistor based on the prepatterned monolayer graphene outperforms its top-down counterpart that has undergone lithography and etching. Our facile selective growth of prepatternable monolayer graphene at intermediate temperatures, along with catalyst recyclability, may altogether lend adaptability, productivity, and sustainability to graphene-incorporated applications.

Equivalent temperature for coarse-grained simulations of graphene

At the same temperature, a coarse-grained model and its all-atom counterpart exhibit different kinetic energy due to a reduction of the number of particles in the coarse-grained model, hence they are not equivalent to each other. A simple method is proposed to investigate the mechanical properties of monolayer, bilayer and trilayer graphene sheets through coarse-grained molecular dynamics simulations at an equivalent temperature, which is determined from the temperature of the all-atom model and the number of particles in both models. It is found that coarse-grained simulations of graphene at the equivalent temperature is able to reproduce well the tensile mechanical properties of its all-atom counterpart even at high temperatures.

Impact of Electron-Phonon Coupling on Graphene Intercalation Compounds from Self Energy: Polynomial Models Selection

In our pursuit of understanding electron-phonon coupling (EPC) and their impact on material properties, we delved deep into the intricate role played by the Eliashberg function in governing electron self-energy. Through meticulous evaluation of tailored polynomial models approximating this function, we unearthed profound insights into how phonon interactions intricately modify electronic energy bands. Employing numerical computations, we meticulously unraveled both the real and imaginary aspects of electron self-energy, crucial in comprehending EPC effects in various materials. Investigating superconductivity within monolayer graphene and its interaction with diverse doping substances, our study led us to identify optimal polynomial models that accurately capture EPC behaviors, offering invaluable implications for predicting critical temperatures in superconducting materials. Expanding the parameters within our models allowed us to anticipate changes in self-energy models for higher-order configurations not explored in this study. Our selection of polynomial spanning degrees from n = 1 to 10 the efficacy of n = 2 (Debye) as the most realistic and accurate model, closely followed by n = 1, albeit occasional deviations observed in specific materials. These discrepancies often stemmed from noise model inaccuracies and parameter approximations. Our comprehensive approach outshone the traditional Kramer-Kronig transform in assessing electron-phonon interactions. Looking ahead, the application of multiple models to the Eliashberg function diagram holds immense promise for enhancing accuracy, despite the challenge of concurrently adjusting multiple input parameters. This integration of numerical modeling with experimental data forms a robust framework, empowering the prediction and fine-tuning of material properties vital for the future fabrication of devices. HIGHLIGHTS Exploring the use of polynomial models to approximate the Eliashberg function, enabling a detailed analysis of electron-phonon coupling (EPC) in materials. Confirm the Debye model's accuracy in predicting the electronic structure of doped graphene. The findings suggest enhanced EPC in materials like CaC6 and its potential to induce superconductivity in monolayer graphene. This work offers a framework for future research and applications in superconducting materials using ARPES data. GRAPHICAL ABSTRACT

Single Crystal Perovskite/Graphene Self-Driven Photodetector with Fast Response Speed.

Recently, the combination of two-dimensional (2D) materials and perovskites has gained increasing attention in optoelectronic applications owing to their excellent optical and electrical characteristics. Here, we report a self-driven photodetector consisting of a monolayer graphene sheet and a centimeter-sized CH3NH3PbBr3 single crystal, which was prepared using an optimized wet transfer method. The photodetector exhibits a short response time of 2/30 μs by virtue of its high-quality interface, which greatly enhances electron-hole pair separation in the heterostructure under illumination. In addition, a responsivity of ~0.9 mA/W and a detectivity over 1010 Jones are attained at zero bias. This work inspires new methods for preparing large-scale high-quality perovskite/2D material heterostructures, and provides a new direction for the future enhancement of perovskite optoelectronics.

High mobility graphene field effect transistors on flexible EVA/PET foils

Monolayer graphene is a promising material for a wide range of applications, including sensors, optoelectronics, antennas, EMR shielding, flexible electronics, and conducting electrodes. Chemical vapor deposition (CVD) of carbon atoms on a metal catalyst is the most scalable and cost-efficient method for synthesizing high-quality, large-area monolayer graphene. The usual method of transferring the CVD graphene from the catalyst to a target substrate involves a polymer carrier which is dissolved after the transfer process is completed. Due to often unavoidable damage to graphene, as well as contamination and residues, carrier mobilities are typically 1000–3000 cm2(Vs)−1 , unless complex and elaborate measures are taken. Here, we report on a simple scalable fabrication method for flexible graphene field-effect transistors that eliminates the polymer interim carrier, by laminating the graphene directly onto office lamination foils, removing the catalyst, and depositing Parylene N as a gate dielectric and encapsulation layer. The fabricated transistors show field- and Hall-effect mobilities of 7000–10 000 cm2(Vs)−1 with a residual charge-carrier density of 2×1011 1 cm−2 at room temperature. We further validate the material quality by terahertz time-domain spectroscopy and observation of the quantum Hall effect at low temperatures in a moderate magnetic field of ∼5 T. The Parylene encapsulation provides long-term stability and protection against additional lithography steps, enabling vertical device integration in multilayer electronics on a flexible platform.

New IEC standards for the measurement of sheet resistance on large-area graphene using the van der Pauw and the in-line four-point probe methods

Graphene has evolved from a scientific research subject to an industrial product, in need of a normative basis for its key control characteristics. Recently two new IEC technical specifications that establish standardized procedures for assessing the sheet resistance RS of monolayer graphene have been published. These new standards, part of the IEC TS 62607-6-xx series, outline protocols for employing two contact methods: i) van der Pauw, and ii) in-line four-point probe. In the following we present and discuss illustrative examples of the scientific experiments designed and performed to inform the standardization process behind the presented standards. In particular we report about the investigation of mechanical contacting of chemical-vapor-deposited monolayer graphene and the measurement of the RS in cm2 area graphene samples with non uniform resistivity distributions. This paper includes an overview of the broader IEC context, detailing the key steps in the development of the standards themselves.

A Quasi-Ballistic Model for Short Channel Monolayer Graphene Field Effect Transistor Including Scattering Effects

In this work, the Landauer approach-based short channel model of a graphene field effect transistor has been presented. The quasi-ballistic and ballistic transport mechanism is explained by this approach for nanoscale transistors. The concept of the virtual source is considered to obtain the carrier density in active regions. Here, we apply the Landauer approach for short-channel graphene field effect transistors relating to the parameter in the virtual source model. The mobility of the model has been improved including various scattering effects like impurity scattering, acoustic phonon scattering, and optical phonon scattering. The dynamic resistance model is considered due to asymmetry transport in the electron branch and hole branch. The proposed model has been verified with several experimental works for model validation. The comparisons of the model simulation with several experimental results that have been reported in the literature match well for different short channel lengths of graphene.

Controllable defects in monolayer graphene induced by hydrogen and argon plasma

Graphene has attracted wide attentions since its successfully exfoliation. Honeycomb sp 2 carbon lattice and Dirac semi-metal band structure make graphene a promising material with excellent mechanical strength, thermal conductivity, and carrier mobility. However, the absence of intrinsic bandgap limits its application in semiconductor. Defects in graphene is supposed to modify its band structure and lead to an opened bandgap. Many methods have been demonstrated to introduce defects into graphene, such as chemical reaction, plasma, electron beam, and laser. However, the species of defects are mostly uncontrollable in most treatment processes. In this study, we report three kinds of defects can be controllably induced in graphene via hydrogen (H2) and argon (Ar) plasma. With different parameter and feeding gas, hydrogenated graphene, graphene nanomesh and graphene with vacancies can be well obtained. The defect density can be precisely controlled by tuning plasma power and irradiation time. Morphological, spectroscopic, and electrical characterizations are performed to systematically investigate the defect evolution. Graphene nanomesh and graphene with vacancies show obvious difference for roughness and coverage, whereas the morphology of hydrogenated graphene remains similar with that of as-prepared graphene. For hydrogenated graphene, an opened bandgap of ∼20 meV is detected. For graphene nanomesh and graphene with vacancies, the semiconductive on/off behaviors are observed. We believe this work can provide more details of plasma-induced defects and assist the application of graphene in semiconductor industry.