Moisture Exposure Research Articles

Comparative Evaluation of the Moisture Permeation of Polyurethane, Polyethylene, and Fluoropolymer Tubing

Abstract Polymer tubing is used for a variety of applications such as the transport of dry nitrogen and other gases in order to purge systems of moisture and other contaminants. While some polymer tubing are marketed for low-moisture applications, permeation data are often not reported to aid in material selection. Tests were performed to compare moisture permeation for a variety of tubing materials that could be used in dry gas purged systems. The results demonstrated that polyethylene and fluoropolymer tubing exhibited practically no moisture permeation, while polyurethane tubing exhibited a noticeable amount of moisture permeation. The results were compared with the moisture permeation of thin films. The permeation was found to be influenced by many factors as dictated by the various results derived from different brands and different durometers within the same brand. The effect of external relative humidity on permeation was also measured. Approximations can also be made on the internal relative humidity based on the external relative humidity. These approximations can be used as well to determine the maximum possible moisture exposure level outside the tubing or the purge time required for a specific application. The results could assist in material selection based on the desired application.

Surface and Buried Interfacial Structures of Epoxy Resins Used as Underfills Studied by Sum Frequency Generation Vibrational Spectroscopy

Flip chip technology has greatly improved the performance of semiconductor devices, but relies heavily on the performance of epoxy underfill adhesives. Because epoxy underfills are cured in situ in flip chip semiconductor devices, understanding their surface and interfacial structures is critical for understanding their adhesion to various substrates. Here, sum frequency generation (SFG) vibrational spectroscopy was used to study surface and buried interfacial structures of two model epoxy resins used as underfills in flip chip devices, bisphenol A digylcidyl ether (BADGE) and 1,4-butanediol diglycidyl ether (BDDGE). The surface structures of these epoxies were compared before and after cure, and the orientations of their surface functional groups were deduced to understand how surface structural changes during cure may affect adhesion properties. Further, the effect of moisture exposure, a known cause of adhesion failure, on surface structures was studied. It was found that the BADGE surface significantly restructured upon moisture exposure while the BDDGE surface did not, showing that BADGE adhesives may be more prone to moisture-induced delamination. Lastly, although surface structure can give some insight into adhesion, buried interfacial structures more directly correspond to adhesion properties of polymers. SFG was used to study buried interfaces between deuterated polystyrene (d-PS) and the epoxies before and after moisture exposure. It was shown that moisture exposure acted to disorder the buried interfaces, most likely due to swelling. These results correlated with lap shear adhesion testing showing a decrease in adhesion strength after moisture exposure. The presented work showed that surface and interfacial structures can be correlated to adhesive strength and may be helpful in understanding and designing optimized epoxy underfill adhesives.

Measuring the Effect of Moisture on Asphalt–Aggregate Bond with the Bitumen Bond Strength Test

Understanding moisture damage mechanisms in asphalt pavements and evaluating the right combination of materials that are resistant to moisture damage are important. Moisture damage is the loss of strength or stiffness in asphalt mixtures caused by a combination of mechanical loading and moisture. Many test methods have been developed to evaluate loss of adhesion and cohesion in binders. However, a simple procedure to address moisture damage in the asphalt–aggregate interface is not available. The feasibility of the newly developed bitumen bond strength (BBS) test for moisture damage characterization was investigated. An experimental matrix that included various binders, modifications, and aggregates to account for the chemical and physical conditions in the aggregate–asphalt interface was completed. A statistical analysis was performed to verify reproducibility of the BBS test. The results indicated that the bond strength of asphalt–aggregate systems was highly dependent on modification and moisture exposure time. Polymers were found to improve the adhesion between asphalt and aggregate as well as the cohesion within the binder. Results from this study indicated that the BBS test was repeatable and reproducible. To further validate the effectiveness of the BBS test, a comparison of the BBS test results and the modified dynamic shear rheometer strain sweep test was conducted. The comparison showed that the BBS test could rank materials similarly to a more sophisticated and time-consuming test.

The screening of charged impurities in bilayer graphene

Positively charged impurities were introduced into a bilayer graphene (BLG) transistor by n-doping with dimethylformamide. Subsequent exposure of the BLG device to moisture resulted in a positive shift of the Dirac point and an increase of hole mobility, suggesting that moisture could reduce the scattering strength of the existing charged impurities. In other words, moisture screened off the 'effective density' of charged impurities. At the early stage of moisture screening the scattering of hole carriers is dominated by long-range Coulomb scatter, but an alternative scattering mechanism should also be taken into consideration when the effective density of impurities is further lowered on moisture exposure.

Silver Surface Iodination for Enhancing the Conductivity of Conductive Composites

AbstractThe electrical conductivity of a silver microflake‐filled conductive composites is dramatically improved after a filler surface treatment. By a simple iodine solution treatment, nonstoichiometric silver/silver iodide nanoislands form on the silver filler surface. Evidence of the decrease of surface silver oxide species is provided by TOF‐SIMS and the redox property of the nanoclusters is studied using cyclic voltammetry and TOF‐SIMS depth profile analyses. The redox property of the nanoclusters on silver flakes helps enhance the electrical conductivity of the conductive composites. The electrical resistivity of the improved conductive composites is measured by four‐point probe method; the reliability of the printed thin film resistors is evaluated by both the 85 °C/85% relative humidity moisture exposure and the −40 ∼ 125 °C thermal cycling exposure. The conductive composite printed radio frequency identification (RFID) antennas with 27.5 wt% of the modified silver flake content show comparable performance in the RFID tag read range versus copper foil antennas, and better than those commercial conductive adhesives that require much higher silver content (i.e., 80 wt%). This work suggests that a surface chemistry method can significantly reduce the percolation threshold of the loading level of the silver flakes and improve the electrical conductivity of an important printed electronic passive component.

Moisture-induced solid state instabilities in α-chymotrypsin and their reduction through chemical glycosylation

BackgroundProtein instability remains the main factor limiting the development of protein therapeutics. The fragile nature (structurally and chemically) of proteins makes them susceptible to detrimental events during processing, storage, and delivery. To overcome this, proteins are often formulated in the solid-state which combines superior stability properties with reduced operational costs. Nevertheless, solid protein pharmaceuticals can also suffer from instability problems due to moisture sorption. Chemical protein glycosylation has evolved into an important tool to overcome several instability issues associated with proteins. Herein, we employed chemical glycosylation to stabilize a solid-state protein formulation against moisture-induced deterioration in the lyophilized state.ResultsFirst, we investigated the consequences of moisture sorption on the stability and structural conformation of the model enzyme α-chymotrypsin (α-CT) under controlled humidity conditions. Results showed that α-CT aggregates and inactivates as a function of increased relative humidity (RH). Furthermore, α-CT loses its native secondary and tertiary structure rapidly at increasing RH. In addition, H/D exchange studies revealed that α-CT structural dynamics increased at increasing RH. The magnitude of the structural changes in tendency parallels the solid-state instability data (i.e., formation of buffer-insoluble aggregates, inactivation, and loss of native conformation upon reconstitution). To determine if these moisture-induced instability issues could be ameliorated by chemical glycosylation we proceeded to modify our model protein with chemically activated glycans of differing lengths (lactose and dextran (10 kDa)). The various glycoconjugates showed a marked decrease in aggregation and an increase in residual activity after incubation. These stabilization effects were found to be independent of the glycan size.ConclusionWater sorption leads to aggregation, inactivation, and structural changes of α-CT as has been similarly shown to occur for many other proteins. These instabilities correlate with an increase in protein structural dynamics as a result of moisture exposure. In this work, we present a novel methodology to stabilize proteins against structural perturbations in the solid-state since chemical glycosylation was effective in decreasing and/or preventing the traditionally observed moisture-induced aggregation and inactivation. It is suggested that the stabilization provided by these chemically attached glycans comes from the steric hindrance that the sugars conveys on the protein surface therefore preventing the interaction of the protein internal electrostatics with that of the water molecules and thus reducing the protein structural dynamics upon moisture exposure.

Silver Surface Iodination for Enhancing the Conductivity of Conductive Composites

AbstractThe electrical conductivity of a silver microflake‐filled conductive composites is dramatically improved after a filler surface treatment. By a simple iodine solution treatment, nonstoichiometric silver/silver iodide nanoislands form on the silver filler surface. Evidence of the decrease of surface silver oxide species is provided by TOF‐SIMS and the redox property of the nanoclusters is studied using cyclic voltammetry and TOF‐SIMS depth profile analyses. The redox property of the nanoclusters on silver flakes helps enhance the electrical conductivity of the conductive composites. The electrical resistivity of the improved conductive composites is measured by four‐point probe method; the reliability of the printed thin film resistors is evaluated by both the 85 °C/85% relative humidity moisture exposure and the −40 ∼ 125 °C thermal cycling exposure. The conductive composite printed radio frequency identification (RFID) antennas with 27.5 wt% of the modified silver flake content show comparable performance in the RFID tag read range versus copper foil antennas, and better than those commercial conductive adhesives that require much higher silver content (i.e., 80 wt%). This work suggests that a surface chemistry method can significantly reduce the percolation threshold of the loading level of the silver flakes and improve the electrical conductivity of an important printed electronic passive component.

EBC development for hot-pressed Y 2O 3/Al 2O 3 doped silicon nitride ceramics

Multilayer EBCs of alcohol and sol-based slurries containing (a) 45% SiO 2–34% Y 2O 3–%Al 2O 3, (b) mullite/Gd 2SiO 5 (88/12 wt.%) with and without B 2O 3 addition, (c) mullite/rare-earth silicates (94/6 wt.%, (Gd 2SiO 5, Lu 2SiO 5, Er 2SiO 5, and HfSiO 4)), and (d) only mullite, were applied on hot pressed Y 2O 3/Al 2O 3 doped Si 3N 4 substrates. Of the four major EBC systems studied, only mullite/Gd 2SiO 5 (88/12 wt.%) EBCs sintered in air at 1400 °C for 3 h showed good bonding with the substrate. In all other EBC systems studied, the Y 2O 3/Al 2O 3 additives present in Si 3N 4 reacted with silica and rare-earth silicates to form low melting point constituents during sintering causing bubble formation and/or de-bonding at the substrate/coating interface. Thermal cyclic resistance of silicon nitride coupons coated with mullite/Gd 2SiO 5 (88/12 wt.%) EBC was investigated in a moisture containing environment (90% H 2O–10% O 2) for 100 cycles from 1350 °C to room temperature (1 h hot and 15 min cold). Moisture exposure resulted in accumulation of large pores in the coating, mostly aligned along the substrate/coating interface.

Surface modification of lactose inhalation blends by moisture

We present an investigation of the effects of relative humidity (RH) on lactose powders during storage, with the aims of determining the humidity conditions under which lactose inhalation blends are stable, and characterising the surface changes that occur as a result of water condensation. Lactose inhalation powders manufactured by milling and sieving were stored in environments of RH from 32% to 100% (at room temperature) and changes in surface properties were observed using BET nitrogen adsorption, environmental scanning electron microscopy and laser diffraction particle size analysis. We found that the specific surface area of all lactose powders decreased during storage, with the rate of decrease and final drop being larger at higher RH (ranging from a 62% decrease at 100% RH to a 34% decrease at 32% RH, at room temperature). The specific surface area decrease corresponded to a reduction in the volume of fine particles (<5 μm) in the blend. Two effects were found to contribute to the decrease in specific surface area: the smoothing of coarse particles, attributed to the surface fine particles undergoing deliquescence due to their enhanced solubility by the Kelvin effect (i.e. due to their greater curvature and consequently greater surface energy), and solid bridging between fine particles in agglomerates, such that loose fine particles disappeared from the powder blend, having bonded with coarser particles. These changes in particle properties resulting from moisture exposure are expected to influence the fine particle fraction of drug released from the powder blends, and the observation that lactose inhalation blends were unstable even at 32% RH could potentially be a concern for the pharmaceutical industry.

Effects of Total Dose Irradiation on the Gate-Voltage Dependence of the $\hbox{1}/f$ Noise of nMOS and pMOS Transistors

We have found that the room-temperature 1/ <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i> -noise gate-voltage and frequency dependences of pMOS transistors are affected significantly by moisture exposure and total dose irradiation. The voltage noise power spectral density <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">S</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Vd</sub> is proportional to ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> - <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> ) <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-ß</sup> , where <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Vt</i> is the threshold voltage, <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> is the gate voltage, and ß is a measure of the gate-voltage dependence. For the pMOS devices, preirradiation ß ranges from 0.4 to 0.9, and the frequency exponent ¿ = -¿ln <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">S</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Vd</sub> /¿ln <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i> is greater than unity. Postirradiation, gate-voltage, and frequency dependences change significantly, with ß >> 1 and ¿ much closer to unity. For nMOS devices, preirradiation ß ¿ 1.6 and ¿ ¿ 1, with little change after irradiation. We attribute these observed changes in pMOS noise to changes in the trap density and energy distribution <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">E</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</sub> ) of these devices. Before irradiation, <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">E</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</sub> ) increases toward the valence band edge, but after irradiation, the distribution is typically more uniform. Moreover, for some moisture-exposed devices, <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">S</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Vd</sub> ¿ ~ ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> - <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> ) <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> after irradiation, indicating a <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">E</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</sub> ) that increases toward midgap. We conclude that irradiation and/or moisture exposure can greatly affect the defect energy distributions for these devices and that the observed nMOS and pMOS noise can be described by a simple trapping model with an energy-dependent trap distribution.

A Nonlinear Impact of Low Energy Laser Beam on Corn Kernel Drying

This paper describes the investigation of low power laser beam application to corn kernels using kernel moisture as a control parameter. Kernel moisture was measured according to HRN ISO 6540:2002 procedure. Two red laser sources of 100mW and 200mW, λ= 632nm, were used in experiments, both with different exposure time. The power density of laser beam was in range from 0.5mJ/cm2 to 20mJ/cm2. Corn kernels were humidified in seven grades: between 15% and 31% of kernel moisture. All groups of corn kernels were exposed to laser beam for four different exposition times. After laser beam treatment corn kernels moisture was determined by the same HRN ISO 6540:2002 procedure. Obtained results exhibit a high nonlinearity effect giving unexpected increase in moisture for 0.62 % for specific initial moisture and for specific exposition time. Also, the decrease of moisture for 0.5 % was observed for specific lower initial moisture and specific exposure time. The effects are now under further cross-examinations.

An Analytical Model of FRP-Concrete Bond Deterioration in Moist Environment

Debonding of FRP from concrete substrate can lead to premature failure of the FRP repaired or retrofitted concrete structures. Therefore, FRP-concrete bond is a major factor affecting the performance of FRP strengthened concrete members. Experimental studies show that moisture plays an important role in the reliability of the bond between FRP and concrete. In this study, a cohesive zone model (CZM) of debonding along the FRP–concrete interface under peel load was analytically established by using a linear elastic separation-stress law. The interface region relative humidity (IRRH) was selected as the primary factor to study the bond durability of FRP/concrete bond. Based on a nonlinear deterioration model, the analytical solution of the CZM was used to determine critical load vs. crack length relations ( P-a curves) of Modified Double Cantilever Beam (MDCB) specimens at different moisture exposure durations. The good agreement with experimental data indicates that the CZM for FRP-concrete joint is an efficient way to analyze bond behavior in moist environments.

Influence of moisture absorption on the interfacial strength of bamboo/vinyl ester composites

Moisture absorption is a major concern for natural fibers used as reinforcement in structural composites. This paper reports a detailed study on the moisture sorption characteristics of bamboo strips and their influence on the interfacial shear strength (IFSS) of bamboo/vinyl ester composite. The IFSS determined by pull-out test decreased dramatically as the fabrication humidity increased. The bamboo strips provide a reservoir of moisture which diffuses into the interfacial region and inhibits the hardening of vinyl ester matrix. The interface of the bamboo/vinyl ester composite can also be damaged due to moisture exposure after fabrication. Post-fabrication exposure of composites to moisture was found to be less damaging than the moisture exposure during the composite fabrication. The IFSS of the composite decreased by nearly 40% in the first 9 d of water immersion. Further immersion up to 100 d did not cause any further reduction in interfacial shear strength.

Confirmed Moisture Damage at Home, Respiratory Symptoms and Atopy in Early Life: A Birth-Cohort Study

Most previous studies on the association between moisture or mold problems in the home and respiratory symptoms in children were cross-sectional and based on self-reported exposure. The aim of this study was to evaluate the impact of objectively observed moisture damage and visible mold in the homes on early-life respiratory morbidity and atopic sensitization in a birth cohort. Building inspection was performed by building engineers in the homes of 396 children, and the children were followed up with questionnaires from birth to the age of 18 months. Specific immunoglobulin E levels were measured at the age of 1 year. Doctor-diagnosed wheezing was associated with the severity of moisture damage in the kitchen and with visible mold in the main living area and especially in the bedroom of the child. The risk for parent-reported wheezing apart from cold increased with the severity of moisture damage in the kitchen. Moisture damage in the bathrooms or other interior spaces had no significant association with wheezing. No significant associations were observed for other end points, such as cough, or respiratory infections. There was a suggestion for an increased risk for sensitization to cat dander linked with moisture and mold exposure. This birth-cohort study supports previous observations that moisture mold problems in the kitchen and in the main living area increase the risk for wheezing in early childhood. The results underline the importance of assessing separately the health effects of moisture and mold problems in different areas of the home.

Modifications of Surfactant Distributions and Surface Morphologies in Latex Films Due to Moisture Exposure

Migration of surfactants in water-based, pressure-sensitive adhesive (PSA) films exposed to static and cyclic relative humidity conditions was investigated using confocal Raman microscopy (CRM) and atomic force microscopy (AFM). Studied PSA films contain monomers n-butyl acrylate, vinyl acetate, and methacrylic acid and an equal mass mixture of anionic and nonionic nonylphenol ethoxylate emulsifiers. A leveling of surfactant concentration distributions is observed via CRM after films stored at 50% relative humidity (RH) are exposed to a 100% RH for an extended time period, while relatively small increases in surface enrichment occur when films are stored at 0% RH. Use of CRM for binary mixtures containing anionic or nonionic surfactant and latex that has undergone dialysis to remove nonpolymeric components indicates that surfactant-polymer compatibility governs to a great extent surface enrichment, but not changes observed with humidity variations. AFM images show that upon drying latex coatings, surfactant and other additives collect in large aggregation regions, which protrude from film surfaces. These structures are absent at high humidity, which appears to result from lateral spreading across the polymer surface. When humidity is reduced, aggregation regions reform but appear to be smaller and more evenly dispersed, and by cycling humidity between 0 and 100% RH, interfacial enrichment can be seen to diminish. Presented results provide greater insights into the distribution behavior of surfactants in latex films and potential mechanisms for observed issues arising for these systems.

Investigations on hygrothermal aging of thermoplastic polyurethane material

In this investigation, the absorption and diffusion of water in thermoplastic polyurethane (TPU) was studied. Water-sorption experiments, physical and mechanical property tests were performed after immersion in water at a set temperature of 70 °C for up to 6 months. Emphasis was given to the effect of immersion aging on thermal, mechanical and tribological properties. Fickian diffusion behaviour was found during the initial immersion time followed by saturation stage as time progressed. The use of differential scanning calorimetry (DSC) analysis showed that the glass transition temperature (Tg) was sensitive to the effect of hygrothermal aging and it decreased with increasing water uptake. More significantly, the mechanical properties in bulk material, obtained from tensile test, were affected by aging. Elastic modulus and stress at 200% of strain of the studied TPU were decreased after sufficient exposure to moisture. On the other hand, the mechanical properties of the material surface were equally investigated with the help of an abrasive wear test. A decrease in wear resistance of the aged TPU was discerned. The reversibility of mechanical and physical properties after moisture exposure was also assessed in this study. The polymer degradation was found as irreversible phenomenon. Finally, the evolution of the mechanical properties seems to be well correlated to structural modifications obtained from Fourier transform infrared spectroscopy (FTIR) characterization.

Moisture Effects on the 1/F Noise Of Mos Devices

We have exposed MOS gate and field oxide transistors to moisture treatments with all pins grounded for up to three weeks. Irradiated field oxide structures showed a significant decrease in low frequency noise with moisture treatment, due to the passivation of Si dangling bonds at or near the Si/SiO2 interface. With moisture exposure, pMOS gate oxide transistors showed significant increases in pre-irradiation 1/f noise and post-irradiation oxide- and interface-trap charge densities. The 1/f noise of nMOS gate oxide transistors shows much less sensitivity to moisture exposure than pMOS transistors, before and after irradiation. We attribute these differences in sensitivities to moisture treatment to the enhancement of water diffusion in SiO2 by B atoms in the oxides that overlie the source/drain junctions of the pMOS transistors, in contrast to the retardation of moisture diffusion by P atoms in the corresponding regions of the nMOS devices.

Nonlinear Deterioration Model for Bond Interfacial Fracture Energy of FRP-Concrete Joints in Moist Environments

This study proposed a bond mechanism based deterioration model of bond interfacial fracture energy for fiber-reinforced polymer (FRP)-concrete joints in moist environments. The bond interface region relative humidity (IRRH) in a moist environment was correlated to the bond fracture energy in this deterioration model. The IRRH-dependent interface separation tractions were derived in the frame of a cohesive zone model. Such an IRRH-dependent interface separation-traction law was simulated by a series of nonlinear interface elements attached to the bond interface to calculate the macroscopic load-displacement curves for the modified double cantilever beam (MDCB) specimens. Through moisture diffusion analysis, IRRH was determined as a function of the moisture exposure time for given specimen dimension and environmental RH. Using IRRH as the bridge, the time-dependent load-displacement curves of the MDCB specimens were obtained. The good agreement with the experimental data indicated that the model worked well. The approach developed in this study can be used to simulate and predict the durability of the bond between the FRP and concrete in moist environments.

Effects of Moisture and Hydrogen Exposure on Radiation-Induced MOS Device Degradation and Its Implications for Long-Term Aging

Transistors and ICs built in several different captive and commercial facilities were exposed to moisture, irradiated, and annealed. The moisture exposures were performed using highly accelerated stress test (HAST) at 130degC and 85% relative humidity. Irradiation of n-channel transistors exposed to HAST followed by a long-term anneal resulted in some increase in interface-trap and oxide-trapped charge buildup. However, exposing p-channel transistors to HAST preirradiation resulted in extremely large and unexpected voltage shifts immediately following irradiation. They were observed for devices with either doped oxide or nitride final chip passivation. Because of this, nitride passivation may not be sufficient to prevent H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O from causing enhanced radiation-induced degradation over long time periods in some devices (e.g., commercial devices with nitride final chip passivation packaged in plastic packages). The smaller voltage shifts for the n-channel transistors may be related to the formation of phosphosilicate glass (PSG) overlying the sources and drains of the n-channel transistors impeding the diffusion of moisture to the gate oxides. It is shown that, the large radiation-induced voltage shifts for the p-channel transistors can lead to enhanced IC parametric degradation and functional failure at lower radiation levels. Large increases in radiation-induced field oxide leakage current were also observed for transistors exposed to HAST preirradiation. Transistors were also annealed (prior to irradiation) and irradiated in H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> . Approximately the same level of radiation-induced degradation was observed for n- and p-channel transistors suggesting that the diffusion kinetics for H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> diffusion are considerably different than for H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O diffusion. These results raise the concern that exposure of devices to moisture or hydrogen can lead to long-term radiation-induced aging effects.

Radiation Effects on the $1/f$ Noise of Field-Oxide Field Effect Transistors

Low-frequency (1/ <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i> ) noise measurements were performed at room temperature as a function of gate bias on field-oxide field effect transistors (FOXFETs) that were irradiated with 10-keV X-rays and then annealed at room temperature. The resulting oxide-trap and interface-trap charge densities were estimated by the midgap charge separation technique. Some devices also were exposed to 85% relative humidity at 130 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">deg</sup> C for three days after irradiation and annealing. Effective border trap densities were estimated from noise measurements in each case. The noise magnitude increases after irradiation and decreases first during annealing and then even more significantly after moisture exposure. The post-humidity-exposure noise for the irradiated devices is well below the pre-irradiation noise for these devices and experimental conditions. The increased noise due to irradiation is attributed to O vacancies and hydrogen bridge (Si-H-Si) defects in the near-interfacial field oxide. The reduction in noise with room-temperature annealing and humidity exposure is due to a combination of thermal and tunnel annealing processes and defect passivation reactions involving water.