Modeling Of Power Devices Research Articles

A new systematic optimization strategy for microwave power device modeling

A new systematic optimization strategy for microwave power device modeling

A new systematic optimization strategy for microwave power device modeling

A new systematic optimization strategy for microwave power device modeling

Neutral-point-clamped inverter with parallel driving of IGBTs for industrial applications

This paper describes the design and construction of a neutral-point-clamped (NPC) inverter and converter, with outputs of 0.8, 1.6, and 3.2 MVA, which use insulated gate bipolar transistors (IGBTs). The inverter and converter are suitable for industrial drive applications, such as rolling mills, water pumps, and so on, and they are composed of multi-inverter units in parallel. Each inverter unit is composed of four pairs of parallel IGBTs connected in series. In order to share current among the parallel-connected IGBTs, influences of wiring inductance and device characteristics are evaluated by simulation using novel power device models and experimental results. To reduce both switching voltage swing and power consumption, a variable-capacitance snubber circuit is also presented for the NPC inverter.

A new systematic optimization strategy for microwave power device modeling

A new systematic optimization strategy for extracting the model parameters of a small-signal equivalent circuit for a microwave power GaAs MESFET is proposed. On the basis of sensitivity analysis of error functions to the model elements, rearrangement of the optimization sequence of suberror functions referring to the model element sensitivities, and transformation of the optimization directions of the error functions along with optimal directions, the global-error function is fast convergent under given starting values. In addition, a logarithmic damping algorithm is also proposed for stabilizing the final results by controlling the updates of insensitive model elements. The results show that the agreement is good between the calculated values and the measurement data of a MESFET. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 27: 269–273, 2000.

A NON QUASI‐STATIC EMPIRICAL MODEL OF THE POWER PIN DIODE FOR CIRCUIT SIMULATION

Models of power semiconductor devices for use in circuit simulators need to take account of effects which can be neglected in low power device models; they then become very complex and difficult to parameterise. The power PIN diode model described in this paper demonstrates how the use of empirically derived look‐up tables can simplify the characterisation problem and how non quasi‐static effects can be incorporated

High-voltage device modeling for SPICE simulation of HVIC's

A novel methodology for flexible SPICE implementation of physical models for high-voltage power devices, accounting for their unique characteristics, is presented and demonstrated. The implementation is achieved without modifying the simulator code by utilizing user-defined controlled sources that reference a subroutine that defines the system of model equations. The simultaneous solution of the equations, which describe the integrated charges in the device and the quasistatic terminal currents in the terms of the terminal voltages, is effected by the SPICE2 nodal analysis. The methodology is exemplified by modeling the insulated-gate transistor (IGT). SPICE simulations of DC and transient characteristics of IGT switching circuits are discussed and shown to be representative of measurements. The flexibility of the modeling methodology for high-voltage integrated-circuit (HVIC) CAD is demonstrated by simulating effects of both static and dynamic latch-up in the merged bipolar/MOS structure of the IGT. >