Resistor Model Research Articles

Ion-Exchange Doping of Semiconducting Single-Walled Carbon Nanotubes.

Semiconducting single-walled carbon nanotubes (SWCNTs) are a promising thermoelectric material with high power factors after chemical p- or n-doping. Understanding the impact of dopant counterions on charge transport and thermoelectric properties of nanotube networks is essential to further optimize doping methods and to develop better dopants. This work utilizes ion-exchange doping to systematically vary the size of counterions in thin films of small and large diameter, polymer-sorted semiconducting SWCNTs with AuCl3 as the initial p-dopant and investigates the impact of ion size on conductivity, Seebeck coefficients, and power factors. Larger anions are found to correlate with higher electrical conductivities and improved doping stability, while no significant effect on the power factors is found. Importantly, the effect of counterion size on the thermoelectric properties of dense SWCNT networks is not obscured by morphological changes upon doping. The observed trends of carrier mobilities and Seebeck coefficients can be explained by a random resistor model for the nanotube network that accounts for overlapping Coulomb potentials leading to the formation of an impurity band whose depth depends on the carrier density and counterion size. These insights can be applied more broadly to understand the thermoelectric properties of doped percolating disordered systems, including semiconducting polymers.

Simultaneous determination of the phase boundary thermal resistance and thermal conductivity in phase-separated TiO2 thin films

Phase boundaries, most often between crystalline and amorphous phases of a material, are ubiquitous lattice imperfections in thin films, particularly deposited by low temperature processes such as atomic layer deposition (ALD). Thermal resistances from these boundaries may impede phonon transport and reduce thermal conductivity. However, to date, there have been no reports on the direct measurement of the phase boundary thermal resistance, due in part to challenges associated with fabricating an atomically flat yet geometrically planar interface between different phases within a film. Here, we present a systematic study to simultaneously determine the phase boundary thermal resistance and thermal conductivity in a series of phase-separated titanium oxide (TiO2) thin films prepared via plasma-enhanced ALD (PEALD). A precise implementation of per-cycle plasma treatment enables extremely localized crystallization—i.e., plasma-assisted atomic layer annealing (ALA)—and the fabrication of crystalline/amorphous layered structures with their respective thicknesses systematically varied. Frequency-domain thermoreflectance measures the effective thermal conductivity of each film and its top and bottom interfaces, confirmed independently using time-domain thermoreflectance. We simultaneously solve a system of linear equations generated by applying a series resistor model to each film, yielding the phase boundary thermal resistance of 5.1 m2 K GW–1 between crystalline and amorphous TiO2, as well as the thermal conductivities of 5.1 and 2.1 W m–1 K–1 for crystalline and amorphous TiO2, respectively. The results suggest that the crystalline/amorphous phase boundary acts like a layer of crystalline (amorphous) TiO2 with equivalent thickness ∼26 (∼11) nm.

High Impedance Fault Models for Overhead Distribution Networks: A Review and Comparison with MV Lab Experiments

Detecting and locating high impedance faults (HIF) in overhead distribution networks (ODN) remains one of the biggest challenges for manufacturers and researchers due to the complexity of this phenomenon, where the electrical current magnitude is similar to that of the loads. To simulate HIF, the selection of the HIF model is important, because it has to correctly reproduce the characteristics of this phenomenon, so that it does not negatively influence the simulations results. Therefore, HIF models play a fundamental role in proposing solutions and validating the effectiveness of the proposed methods to detect and localize HIF in ODN. This paper presents a systematic review of HIF models. It is intended to facilitate the selection of the HIF model to be considered. The models are validated based on experimental data from medium voltage (MV) laboratories, specifically, recorded waveforms from two HIF tests conducted in an MV lab were analyzed and compared with three established HIF models. The efficacy of these models was assessed against MV lab test data to ensure a precise representation of both transient and steady-state conditions for fault conductance and current waveforms. The findings show that the two nonlinear resistor models better approximate the waveforms obtained in the experimental tests performed in this study.

Analytic solution for pulse wave propagation in flexible tubes with application to a patient-specific arterial tree

In this paper, we present an analytic solution for pulse wave propagation in a flexible arterial model with tapering, physiological boundary conditions and variable wall properties (wall elasticity and thickness). The change of wall properties follows a profile that is proportional to $r^\alpha$ , where $r$ represents the lumen radius and $\alpha$ is a material coefficient. The cross-sectionally averaged velocity and pressure are obtained by solving a hyperbolic system derived from the mass and momentum conservations, and they are expressed in Bessel functions of order $(4-\alpha )/(3-\alpha )$ and $1/(3-\alpha )$ , respectively. The solution is successfully validated by comparing it with numerical results from three-dimensional (3-D) fluid–structure interaction simulations. Subsequently, the solution is employed to study pulse wave propagation in an arterial model, revealing that the wall properties and the physiological outlet boundary conditions, such as the resistor–capacitor–resistor (RCR) model, play a crucial role in characterizing the input impedance and reflection coefficient. At low-frequency range, the input impedance is found to be insensitive to the wall properties and is primarily determined by the RCR parameters. At high-frequency range, the input impedance oscillates around the local characteristic impedance, and the oscillation amplitude varies non-monotonically with $\alpha$ . Expressions for the input impedance at both low-frequency and high-frequency limits are presented. This analytic solution is also successfully applied to model flow inside a patient-specific arterial tree, with the maximum relative errors in pressure and flow rate never exceeding $1.6\,\%$ and $9.0\,\%$ when compared with results from 3-D numerical simulations.

Graphene-Based Transparent Flexible Strain Gauges with Tunable Sensitivity and Strain Range.

Monolayers of graphene oxide, assembled into densely packed sheets at an immiscible hexane/water interface, form transparent conducting films on polydimethylsiloxane membranes after reduction in hydroiodic acid (HI) vapor to reduced graphene oxide (rGO). Prestraining and relaxing the membranes introduces cracks in the rGO film. Subsequent straining opens these cracks and induces piezoresistivity, enabling their application as transparent strain gauges. The sensitivity and strain range of these gauges is controlled by the cracked film structure that is determined by the reducing conditions used in manufacture. Reduction for 30 s in HI vapor leads to an array of parallel cracks that do not individually span the membrane. These cracks do not extend on subsequent straining, leading to a gauge with a usable strain range >0.2 and gauge factor (GF) at low strains ranging from 20 to 100, depending on the prestrain applied. The GF reduces with increasing applied strain and asymptotes to about 3, for all prestrains. Reduction for 60 s leads to cracks spanning the entire membrane and an increased film resistance but a highly sensitive strain gauge, with GF ranging from 800 to 16,000. However, the usable strain range reduces to <0.01. A simple equivalent resistor model is proposed to describe the behavior of both gauge types. The gauges show a repeatable and stable response with loading frequencies >1 kHz and have been used to detect human body strains in a simple e-skin demonstration.

A New Compact Model for Third-Order Memristive Neuron With Box-Shaped Hysteresis and Dynamics Analysis

This paper proposes a new compact model and presents circuit-theoretical analysis for a third-order memristive neuromorphic element fabricated by S. Kumar et al. The proposed model mainly consists of a box-shaped resistor model and a simplified piecewise-linear memristor model. Since the dynamic behavior of the box-shaped hysteresis in the quasi-static current-voltage curve is mostly unexplored, we firstly extract the box-shaped resistor model and construct its oscillators. The coordinate system shifting method and dynamic route analysis method are used to reveal the operating mechanism of box-shaped resistor-based oscillators. Both the theoretical analysis and simulation verification indicate that the box-shaped hysteresis characteristic facilitates the generation of neuromorphic action potentials. The proposed new compact model not only captures quasi-static characteristics, but also includes dynamic behaviors, such as action potential, periodic spiking, and periodic bursting. The influences of the model parameters are further investigated to reveal the mechanism of the neuromorphic behaviors in the box-shaped hysteresis and positive differential resistance regions. Simulation results manifest the feasibility of the proposed model and the correctness of the presented analysis methods, which pave the way to the optimized design of memristive devices and the research of neuromorphic dynamics.

Cooperation in bioluminescence: understanding the role of autoinducers by a stochastic random resistor model

Quorum sensing is a communication mechanism adopted by different bacterial strains for the regulation of gene transcription. It takes place through the exchange of molecules called autoinducers. Bioluminescence is an emergent threshold phenomenon shown by some bacteria strains. Its precise relationship to quorum sensing is a debated topic, particularly regarding the role of the different autoinducers used by bacteria. In this paper, assuming a direct relationship between bioluminescence and quorum sensing, we investigate the role of multiple autoinducers in the bioluminescence response of Vibrio harveyi, considered as a model bioluminescent strain, due to its quorum sensing circuitry involving an array of three different autoinducers. Experiments on mutants of this bacterium, obtained by suppression of one or more autoinducers, reveal their relative non-trivial relevance and cooperative interaction patterns. The proposed analysis is implemented on a regular lattice, whose nodes represent microbial entities equipped with charges, which represent the ability to up/down regulate the gene expression. Quorum sensing results from a Coulomb-type field, produced by the charges. In analogy with random resistor network models, the lattice is permeated by an effective current which accounts for the amount and distribution of the charges. We propose that the presence of different autoinducers correspond to a different up/down regulation of gene expression, i.e., to a different way to account for the charges. Then, by introducing a modulation of the charge dependence into the current flowing within the network, we show that it is able to describe the bioluminescence exhibited by V. harveyi mutants. Furthermore, modulation of the charge dependence allows the interactions between the different autoinducers to be taken into account, providing a prediction regarding the data obtainable under specific growth conditions.Graphical abstract

Metallic filament domain dynamics-induced abrupt resistive switching characteristics with small hysteresis in two dimensional-crystalline VO2 films

The domain configurations in vanadium dioxide (VO2) that are interfacing with a substrate play an important role, particularly in the electronic property, due to the interface-dependent strain induction and phase coexistence across the metal-insulator transition (MIT) process. Here, we demonstrate an abrupt resistive switching behavior with a small hysteresis by utilizing the strain-induced metallic filament domains in VO2 films with puzzle-like two-dimensional single crystalline domains (2D-crystalline VO2 films), which are synthesized on a SiO2 layer. We find that an anisotropic tensile strain induced at the 2D-crystalline VO2 films /SiO2 interfaces leads to the preferential formation and propagation of metallic stripe domains along the in-plane growth direction across the MIT. We also demonstrate that based on simultaneous in situ observations of electrical characteristics and phase evolution in the 2D-crystalline VO2 films, the abrupt transition with a narrow hysteresis width (<4 °C) is attributed to the thermally activated and reversible evolution of metallic stripe domains acting as a conducting filament channel within an insulating phase, which is associated with anisotropic strain distribution. Moreover, we show that these experimental results are consistent with the theoretical analysis based on a parallel resistor model. In addition, we further demonstrate thermally-triggered abrupt and reversible resistive switching performance of the 2D-crystalline VO2 film, maintaining stable for 500 switching cycles. These results provide an important strategy to modulate and utilize the unique MIT hysteresis behavior properties through controlling the configuration of metallic and insulating stripe domains in the 2D-crystalline structure of VO2 for the development of high-performance VO2 based electrical devices.

A model heterostructure with engineered Berry curvature

Molecular-beam epitaxy enables ultrathin functional materials to be combined in heterostructures to create emergent phenomena at the interface. Magnetic skyrmions are an example of an exciting phase found in such heterostructures. SrRuO3 and SrRuO3-based heterostructures have been at the center of the debate on whether a hump-like feature appearing in Hall resistivities is sufficient evidence to prove the presence of skyrmions in a material. To address the ambiguity, we synthesize a model heterostructure with engineered Berry curvature that combines, in parallel, a positive anomalous Hall effect (AHE) channel (a Sr0.6Ca0.4RuO3 layer) with a negative AHE channel (a SrRuO3 layer). We demonstrate that the two opposite AHE channels can be combined to artificially reproduce a “hump-like” feature, which closely resembles the hump-like feature typically attributed to the topological Hall effect and the presence of chiral spin textures, such as skyrmions. We compare our heterostructure with a parallel resistor model, where the inputs are the AHE data from individual Sr0.6Ca0.4RuO3 and SrRuO3 films. To check for the presence of skyrmions, we measure the current dependence, angle dependence, and minor loop dependence of Rhump in the heterostructure. Despite the clear hump, no evidence of skyrmions is found.

Precise Modeling of Nonlinear Rectifier Loads in Wireless Power Transfer Systems

The load of the receiver coil in a wireless power transfer system can be considered as a sub-circuit, typically comprising a diode rectifier, a filter capacitor, and an equivalent resistor <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">L</sub> . Such sub-circuit is nonlinear but is usually represented as an equivalent linear resistor model 8 <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">L</sub> /π <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> based on the fundamental approximation of Fourier Analysis. Such simplified approach is inaccurate particularly when the receiver current is distorted. This paper presents two novel models for the nonlinear rectifier load with full consideration of harmonics and parasitic components of the rectifier. One intermediate model is applicable for systems with continuous rectifier currents, while an advanced model is valid for systems with both continuous and discontinuous rectifier currents. The advanced model is proved to be accurate for any load conditions, including extreme-light load conditions with highly distorted receiver currents. It can be reduced to the intermediate model if the rectifier currents are continuous. The intermediate model can in turn be simplified to the classic linear model if harmonics are ignored. Both simulation and experimental results have verified the accuracies of the proposed models over the conventional linear resistor model for a wider range of load conditions.

Resistor Model of Layered Film Structures

Electric properties of film structures consisting of two-dimensional layers , composed by nanocrystalline grains of a semiconductor are proposed to be modeled with an equivalent scheme , in which resistors indicate electrical resistance of current channels in metallic contacts , grain material , potential barriers between grains and layers . Numerical simulation within the model has shown that there is a nonuniform current distribution over the area of the contacts . Current density at their edges can be 3–6 times higher than in the center . Local currents and their distribution in the film bulk are determined by the grain structure of the film , number of the layers , electronic properties of the barriers between grains and layers .

Relationship between thermal and electrical conductivity curves of soils with a unimodal pore size distribution: Part 1. A unified series-parallel resistor model

Soil thermal conductivity (λ) and electrical conductivity (σ) characterize heat and electricity conduction through soils. Both λ and σ are affected by similar factors, such as soil water content (θ), texture, bulk density (ρb), temperature, structure, and organic matter content. Little is known about the quantitative relationship between λ and σ, and how soil texture and ρb modify the relationship. In this part one of a two-part series, we examine the correlation between λ(θ) and σ(θ) curves and develop a new model for normalized σ curves of soils with a unimodal pore size distribution. We introduce an Ohm’s law analogy to describe the λ and σ curves conceptually, based on a cubic cell unit model. A unified series–parallel resistor model considering θ and ρb effects is established for both λ(θ) and σ(θ) curves by considering heat and electrical conduction pathways (solid, solid–liquid, and liquid pathways) in the hydration, menisci, and continuous liquid ranges. Simultaneous measurements of θ, λ and σ with thermo-TDR sensors on two soils are used to examine the model performance at various values of ρb and θ. The modeled and measured λ (θ) and σ (θ) curves provide consistent trends, and the normalized λ and σ values vs. degree of saturation confirm the existence of an earlier reported “mirror image” phenomenon between the functions.

Relationship between thermal and electrical conductivity curves of soils with a unimodal pore size distribution: Part 2. Estimating bulk electrical conductivity from thermal conductivity

Soil thermal conductivity (λ) and electrical conductivity (σ) influence heat conduction and electrical conduction through soils. In Part 1 of this two-part series, we demonstrated that for soils with a unimodal pore size distribution, the λ and σ curves were interrelated and could be described with a unified series–parallel resistor model. Based on the conceptual model presented in Part 1, the “mirror image” phenomenon in the λ-σ relationship was further evaluated. Starting with the Lu et al. (2007) λ model, the “mirror image” phenomenon was used to derive a new normalized σ model. The new σ model was dependent on degree of water saturation (S), and shared the same shape parameters as those in the λ model. Here, the new σ model is examined using new datasets consisting of simultaneous thermo-TDR sensor measurements of soil water content (θ), λ and σ. New model σ values interpolated between known dry and saturated σ values agreed well with measured σ values, with RMSE values within 0.102 dS m−1 and bias values between −0.083 and 0.014 dS m−1 for a variety of soil samples. Using repeated in situ λ measurements made in soils during an evaporative drying period, the new σ model estimated normalized σ values with RMSEs within 0.015 dS m−1. The new σ model offers an effective way to estimate σ of unsaturated soils.

Electrical-thermal coupling characteristics of pre-insertion resistors in AC filter circuit breaker for UHV grid.

The ultra-high voltage (UHV) AC/DC grid can provide a platform for sustainable power worldwide. To improve the bus voltage quality of the UHV AC system, AC filters are frequently switched into the UHV grid through circuit breakers with pre-insertion resistors. The pre-insertion resistors suppress inrush currents and operate over-voltage during switching. In this paper, we establish a macro and micro model of the pre-insertion resistor based on its temperature coefficient and micro-morphology. We simulate and analyze its electric-thermal coupling characteristics under standard closing and short-circuit faults. After the simulation model and physical comparison analysis, we find that under a usual closing surge, the electric field distribution of the pre-insertion resistor is uniform and undergoes a slight rise in temperature. However, under a short circuit fault, the temperature rise is drastic and exceeds the maximum allowable temperature, causing glassy melt in some parts of the resistor. Considering the volume ratio of each component of the resistor, a two-dimensional cross-sectional simulation model of the resistor is established to simulate the electric-thermal characteristics of the microstructure of the resistor, and insinuates that the current is concentrated in the carbon channel. That is mainly due to the uneven distribution of carbon material and may lead the local temperature to exceed the maximum allowable temperature and damage the resistor.

SOLAR PANEL MODEL SELECTION FOR DEVELOPING A COMPLEX SOLAR PANEL TESTING SYSTEM SOFTWARE BY COMPARATIVE ANALYSIS

The right choice of a solar panel model is essential while developing a software for a solar panel complex testing system. Currently, there are many versions of solar panel mod-els, but not all of them give accurate results and reflect the performance of the solar panel. Different models of solar panels are considered. Perhaps the most famous of them are the circuits with single diode, with one diode - one resistor, and with one diode - two resistors. In this work, research and analysis of the mentioned schemes are carried out. Simu-lations have been carried out for all the mentioned schemes. For the comparative analysis, the standard test condition (STC) - 250C temperature was chosen for all models and the comparison was made with the results presented for the corresponding temperature in the BP-MSX120 and BP 4180T solar panel datasheets. Of the 11 parameters that exist in solar panels, perhaps the most important are three parameters, short circuit current (Isc), open circuit voltage (Voc), maximum power point (MPP). Thus, we performed modeling for the three selected schemes (one-diode, one-diode and one resistor, one-diode and two resistor models), calculated the specified param-eters, obtained the curves and performed a comparative analysis taking into account all the three parameters. According to the principle of compromise, considering the most im-portant parameter, MPP. We compared those parameters, and considered the model whose MPP is closer to the real results to be the best.

Стабилизация сверхпроводниковых защитных резисторов посредством сетчатой электрической изоляции

The possibility of using high-temperature superconductors of the second generation in protective resistors (HTS resistors) for electrical equipment is considered. It is proposed to use mesh fiberglass electrical insulation in the HTS resistors to ensure the efficiency of the heat sink and maintain a stable overloaded operation. Physical modeling of such resistors was performed, which showed the preservation of their overload capability and the suppression of thermal instabilities due to the presence of mesh insulation.

Characterization of Transmission Lines on Lossy or Dispersive Substrates With a Complete Model of a Series Resistor for Impedance Standard of Scattering Parameter Measurements

This paper presents a complete model and process for obtaining a solution for a series resistor with frequency-dependent resistance and inductance to characterize planar transmission lines (TLs) after a one-tier multiline thru-reflect-line (TRL) calibration. The impedance of TL characterization actually is the reference impedance of scattering parameter (S-parameter) measurements and is not easy to determine for TLs on lossy or dispersive substrates. To account for parasitic effects at high frequencies, the series resistor is modeled as a lossy TL segment with a frequency-dependent resistance and inductance per unit length with additional discontinuities between the TL and the resistor. The TL characteristic impedance can then be evaluated based on the de-embedded S-parameters of series resistors with lengths <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">l_s</i> and 2 <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">l_s</i> after calibration, in which the TL propagation constant is determined as well to complete the TL characterization. The proposed method is examined by using coplanar waveguides (CPWs) fabricated with an integrated passive device (IPD) process on high-resistivity silicon and fabricated with standard CMOS technology to demonstrate the frequency dependence of the resistance of the series resistors at high frequencies. Independent calibration comparison measurements are conducted to validate the acquired TL characteristic impedances up to 110 GHz.

A Kinetic Model for Predicting Trace Gas Uptake and Reaction.

A model is developed to describe trace gas uptake and reaction with applications to aerosols and microdroplets. Gas uptake by the liquid is formulated as a coupled equilibria that links gas, surface, and bulk regions of the droplet or solution. Previously, this framework was used in explicit stochastic reaction-diffusion simulations to predict the reactive uptake kinetics of ozone with droplets containing aqueous aconitic acid, maleic acid, and sodium nitrite. With the use of prior data and simulation results, a new equation for the uptake coefficient is derived, which accounts for both surface and bulk reactions. Lambert W functions are used to obtain closed form solutions to the integrated rate laws for the multiphase kinetics; similar to previous expressions that describe Michaelis-Menten enzyme kinetics. Together these equations couple interface and bulk processes over a wide range of conditions and do not require many of the limiting assumptions needed to apply resistor model formulations to explain trace gas uptake and reaction.

Defect Engineering in Thickness-Controlled Bi2O2Se-Based Transistors by Argon Plasma Treatment.

We present a simple, effective, and controllable method to uniformly thin down the thickness of as-exfoliated two-dimensional Bi2O2Se nanoflakes using Ar+ plasma treatment. Atomic force microscopy (AFM) images and Raman spectra indicate that the surface morphology and crystalline quality of etched Bi2O2Se nanoflakes remain almost unaffected. X-ray photoelectron spectra (XPS) indicate that the O and Se vacancies created during Ar+ plasma etching on the top surface of Bi2O2Se nanoflakes are passivated by forming an ultrathin oxide layer with UV O3 treatment. Moreover, a bottom-gate Bi2O2Se-based field-effect transistor (FET) was constructed to research the effect of thicknesses and defects on electronic properties. The on-current/off-current (Ion/Ioff) ratio of the Bi2O2Se FET increases with decreasing Bi2O2Se thickness and is further improved by UV O3 treatment. Eventually, the thickness-controlled Bi2O2Se FET achieves a high Ion/Ioff ratio of 6.0 × 104 and a high field-effect mobility of 5.7 cm2 V-1 s-1. Specifically, the variation trend of the Ion/Ioff ratio and the electronic transport properties for the bottom-gate Bi2O2Se-based FET are well described by a parallel resistor model (including bulk, channel, and defect resistance). Furthermore, the Ids-Vgs hysteresis and its inversion with UV irradiation were observed. The pulsed gate and drain voltage measurements were used to extract trap time constants and analyze the formation mechanism of different hysteresis. Before UV irradiation, the origin of clockwise hysteresis is attributed to the charge trapping/detrapping of defects at the Bi2O2Se/SiO2 interface and in the Bi2O2Se bulk. After UV irradiation, the large anticlockwise hysteresis is mainly due to the tunneling between deep-level oxygen defects in SiO2 and p++-Si gate, which implies the potential in nonvolatile memory.

Circuit Simulation of Film Resistor Laser Trimming with a Measuring Voltage Source

This article continues the series of publications that describe in detail the process of development, research, and implementation of circuit modeling and machine vision mechanisms in industrial equipment for laser trimming of resistors in order to obtain products with better characteristics and increase the economic efficiency of the process. A circuit model of the process of laser trimming of film-resistive elements under the action of a measuring voltage source, as well as an algorithm for correcting this model during laser trimming, has been developed. The paper considers the principles of building a circuit model of film resistor cutting. The conductive resistive medium is defined with the component equations and the topology of the circuit model. A method of estimating the electric parameters of a resistor operating in the system with a measuring voltage source is shown. An equation system for the node voltages is defined, and the resistive layer parameters are analyzed as the circuit model structure changes during the cutting process.