SPICE Model Research Articles

Modeling of HCI effect in nFinFET for circuit reliability simulation

This paper proposes an equivalent circuit model for simulating the Hot Carrier Injection (HCI) effect. This model is developed based on the N-FinFET in the 12 nm Process Design Kit (PDK) and incorporates arithmetic units and electrical components from the Electronic Design Automatic (EDA) software. Input parameters can be freely modified by the user, such as stress time, ambient temperature, gate length, gate width and process corner. The model also considers the influence of the voltage at each end of the transistor on the HCI effect. The model can be accessed in the EDA tool just like a normal transistor and can be used to evaluate the HCI effect on circuits without modifying the SPICE model. The accuracy and applicability of this model has been verified by comparing it with measured results from other published literature.

A Quasi-Floating Channel-Based SPICE Model for Improving the Modeling Accuracy of SiC MOSFETs With Multiple Device Structures

A Quasi-Floating Channel-Based SPICE Model for Improving the Modeling Accuracy of SiC MOSFETs With Multiple Device Structures

The Effect оf Laser Radiation оn Functional Properties of MOS Structures

The electrophysical properties of instrument MOSFET structures (capacitor, field-effect transistor with an isolated gate and an induced channel, CMOS integrated circuit) when exposed to unmodulated laser radiation are studied. Static and dynamic characteristics were measured. The theoretical study was carried out using the developed SPICE models and numerical experiments. An expression is obtained for the volt-ampere characteristic of a field-effect transistor operating in a mode with constant optical illumination. It is shown that the characteristics of the structures are determined by the generation and recombination of nonequilibrium charge carriers, the field effect, the photovoltaic effect in p—n junctions, the photo-Dember effect and tunneling of charge carriers through a gate dielectric. The results of the work are of interest from the point of view of creating high-speed transistors and integrated circuits of a new type.

The relationship of voltage variations in the third quadrant and the Schottky area ratios in a 4H-SiC SBD-embedded MOSFET

Based on the measured and the TCAD simulation results, this paper provides a detailed description of the third quadrant characteristics of the Schottky barrier diode (SBD) embedded MOSFETs with different Schottky area ratios of 2.6 %, 5.3 %, and 14.7 %. As the Schottky area ratio increases, the shift of the third quadrant turn-on voltages of the MOSFETs influenced by the gate voltage decreases. The shift rates in the conventional MOSFET and SBD-embedded MOSFETs are from 57.2 % to 0 % when Vgs changes from 0 V to −4 V. The shift rate becomes 0 % when the Schottky area ratio is larger than 5.3 %. Simultaneously, the TCAD simulation results and the measured results indicate that the SBD-embedded MOSFETs can effectively suppress the conduction of the low barrier diode and the body diode.Furthermore, the SPICE models were built to explain the physics mechanisms. The fitting error between the measured and fitting results is as low as 1.3 % among the models with the different Schottky area ratios.

Investigation into Using CFD for Estimation of Ship Specific Parameters for the SPICE Model for Prediction of Sea Spray Icing: Part 1—The Proposal

Investigation into Using CFD for Estimation of Ship Specific Parameters for the SPICE Model for Prediction of Sea Spray Icing: Part 1—The Proposal

An Investigation into Using CFD for the Estimation of Ship Specific Parameters for the SPICE Model for the Prediction of Sea Spray Icing: Part 2—The Verification of SPICE2 with a Full-Scale Test

A hybrid CFD–ML model for the prediction of sea spray icing, SPICE2, was developed in Part 1 of this study in Deshpande et al., 2024. The SPICE2 model is an extension of the ML model, SPICE, where some of the variables required for icing rate predictions: local wind speed, spray duration, spray period, and spray flux, are computed from CFD simulations. These, along with the air and water temperatures, and the salinity from the metocean data are used for the prediction of icing rates at different locations on a moving vessel. The existing full-scale icing measurements proved to be not detailed enough for the purpose of the verification of sea spray icing prediction models and the verification of the SPICE2 required distribution of sea spray icing data on the vessel surface in addition to the vessel design for simulation. A full-scale sea spray icing test was conducted in 2018 by Sundsbø et al. on a fully enclosed lifeboat equipped for the Goliat field in the Barents Sea. The 3D design of the same lifeboat, together with the corresponding metocean conditions and ship characteristics was used for the simulation of the vessel-specific parameters required for the verification of the icing rate and distribution prediction from the SPICE2 model against the measured distribution of sea spray icing rates on the lifeboat surface. The availability of the 3D model of this lifeboat, in addition to the fact that the icing measurements from this test were detailed enough to attempt a model verification served the purpose of validating the SPICE2 model. The icing rates measured on this lifeboat are used for the full-scale validation of the SPICE2 model that is proposed in Part 1 of this study. It was seen that the icing rates predicted by SPICE2 concurred with 9 of 13 selected locations on the lifeboat. The ones which did not showed very little deviation from the measurements. The icing rate and distribution prediction with SPICE2 were satisfactorily validated against full-scale icing measurements. This is a first attempt in modelling sea spray generation using CFD and further research into CFD for the estimation of spray flux is suggested.

ResNet Modeling for 12 nm FinFET Devices to Enhance DTCO Efficiency

In this paper, a deep learning-based device modeling framework for design-technology co-optimization (DTCO) is proposed. A ResNet surrogate model is utilized as an alternative to traditional compact models, demonstrating high accuracy in both single-task (I–V or C–V) and multi-task (I–V and C–V) device modeling. Moreover, transfer learning is applied to the ResNet model, using the BSIM-CMG compact model for a 12 nm FinFET SPICE model as the pre-trained source. Through this approach, superior modeling accuracy and faster training speed are achieved compared to a ResNet surrogate model initialized with random weights, thereby meeting the rapid and efficient demands of the DTCO process. The effectiveness of the ResNet surrogate model in circuit simulation for 12 nm FinFET devices is demonstrated.

Temperature- and gate voltage-dependent I–V modeling of GaN HEMTs based on ASM-HEMT

Abstract In this paper, a temperature and gate voltage dependent current-voltage (I-V) model for Gallium nitride (GaN) high electron mobility transistors (HEMTs) devices is studied. In order to help researchers and designers simulate devices in the absence of experimental data and improve parameter extraction efficiency, the temperature and gate voltage dependence of mobility are discussed and incorporated into the proposed model which is revised from the standard advanced SPICE model (ASM) for GaN HEMTs. The mobility variations with gate voltage from -2 V to 6 V and temperature from 10 K to 1000 K are analyzed. The simulation results of our model are compared with the standard ASM-HEMT model, and the output and transfer characteristics of the device from 270 K to 420 K are simulated. Thereby, our model may simulate various applications of GaN HEMTs at different gate voltages and temperatures in the early stages of design and research.

Comparative Study for DC-DC Converter Output Bank’s Reliability Evaluation Using Prediction Standards MIL-HDBK-217F vs. Telcordia SR-332

In the last decade, a higher level of reliability has become a compulsory demand when it comes to modern DC-DC converters. This work addresses the main reliability metrics: in many studies, the failure rate λ and MTBF of an output capacitor bank used within a high-current low-voltage buck converter have shown that the output capacitor bank is the most critical component within the converter. Many authors dealt with this issue by performing reliability predictions. The majority of studies use only one specific standard prediction to solve the problem. Herein, the calculation was performed using both the older standard, MIL-HDBK-217, and the latest one, Telcordia SR-332, providing a benchmark comparison between the two, which is a helpful tool for output capacitor selection in early-stage design. The military standard was well accepted for decades in reliability prediction, even in industrial electronics, and is still used today in a critical manner because there have been no more updates after the latest version, MIL-HDBK-217F—Notice 2, was released in 1995. Since then, newer prediction standards have appeared in the electronics reliability market. Over time, this standard was mostly used, but it does not accurately model the reliability because of a lack of taking account of the mission profile. The above-mentioned newer standard—i.e., Telcordia SR-332—also tries to compensate for the lack of the newest component technology in the older standard (which is the first standard released on the market), supplying useful design data for design engineers who use the so-called “design with reliability in mind” concept. This provides the designer of DC-DC converters with a comparison between the reliability values when the two mentioned standards are used. This paper establishes the environmental condition for the passive components by means of a point of load (PoL) buck converter that is used for both calculation methods. The influence of temperature and several specific concepts, like reference conditions, operating conditions, ripple, and internal self-heating, were taken into account in order to display the results. The temperature for the capacitor’s capsule needed in πT stress factor calculation was derived using PSPICE simulation. High-fidelity and dedicated SPICE models provided by the manufacturer were used for MOSFETs, polymer electrolytic, and MLCC capacitors that comprise the converter.

Near-Peer Coaching to Enhance Operative Learning: An Educational Innovation for Surgical Training.

To design, implement, and evaluate a near-peer coaching model to enhance operative learning in general surgery training. There is an urgent need to maximize operative learning in surgical education. Trainees find barriers to operative learning difficult to navigate and often sacrifice educational opportunities for the sake of impression management. A prospective cohort study was conducted over a 6-month period following design and implementation of a trainee-led near-peer coaching model; "SPICE" (Set goals, Plan, Imagine, Comment and feedback, Evaluate and reflect). Semistructured interviews were conducted to explore trainees' experiences of the model. Twelve trainees participated in the study. The near-peer coaching encounters provided trainees with the psychological safety to be honest about learning needs, validated insecurities, and mitigated the pressures associated with impression management that consistently shaped consultant-trainee relationships. Trainees described improved operative performance, increased self-confidence, and a greater ability to adapt to the unexpected. Trainees adapted the use of the SPICE model to conventional consultant-trainee dynamics, which facilitated learning conversations and negotiation of operative opportunities. On a broader scale, trainees noticed an improvement in the teaching culture of the unit, describing that the use of the model legitimized the importance of perioperative learning conversations and increased consultant enthusiasm for teaching. Near-peer coaching created a unique psychological safety that facilitated authentic reflection and goal setting and improved trainee confidence. The benefits of the SPICE model were translated to other contexts and facilitated entrustment in conventional consultant-trainee relationships.

Development of generalized photovoltaic model using ISIS-PROTEUS

Photovoltaic (PV) energy is a form of renewable energy that generates electricity from sunlight. PV systems consist of solar cells, which convert sunlight into electricity using a process known as the photovoltaic effect. Modeling and simulating PV systems involves using mathematical and computational models to predict the behavior and performance of PV systems under various conditions. This can include modeling the electrical characteristics of solar cells, as well as the interactions between multiple cells in a PV module or system. Following this sense, we present in this work a novel implementation of a generalized PV model using ISIS Proteus software. Proteus is layout software for electronic circuit simulation, schematic capture and PCB design. Some studies have indeed taken this context to model the PV modules either by using a Proteus Spice model of the photovoltaic panel without including the effect of climatic conditions variation, or by using pure mathematical relations that describe all physical and environmental parameters which will lead to a static behavior. The developed model in this paper as it is generalized, can be typically used as a PV cell, module even a generator for a complete simulation of a PV system. PV cell, which is the elementary component of PV system, is modeled using the single diode equivalent circuit (SDM) also known as five-parameter model and its behavior is simulated in details. The most advantage in our study is the fact that the PV output can be obtained wherever what solar radiation and ambient temperature where PV module is operating. Our model gives also the possibility to simulate a dynamic behavior under any climatic conditions. The accuracy between obtained results of simulation and the experimental data confirm the reliability and the high performance of the developed model.

Characterization and SPICE modelling of a transformer for LLC converter based on GaN transistors

Characterization and SPICE modelling of a transformer for LLC converter based on GaN transistors

Recent Trends in Application of Memristor in Neuromorphic Computing: A Review

Abstract: Recently memristors have emerged as a form of nonvolatile memory that is based on the principle of ion transport in solid electrolytes under the impact of an external electric field. It is perceived as one of the key elements to building next-generation computing systems owing to its peculiar resistive switching characteristics. The switching mechanism in a memristor is mainly governed by filamentary conduction. Further, it can be employed as a memory as well as a logic element, which makes it an ideal candidate for building innovative computer architecture. Moreover, it is capable of mimicking the characteristics of biological synapses, which makes it an ideal candidate for developing a Neuromorphic system. In this review to begin with the switching mechanism of the memristor, primarily focusing on filamentary conduction, is discussed. Few SPICE models of memristor are reviewed, and their critical comparison is performed, which are widely used to build computing systems. An in-depth study on the various crossbar memory architecture augmented with memristors is reviewed. Finally, the application of memristors in neuromorphic computing and hardware implementation of Artificial Neural Networks (ANN) employing memristors is discussed.

Progress on a Carbon Nanotube Field-Effect Transistor Integrated Circuit: State of the Art, Challenges, and Evolution.

As the traditional silicon-based CMOS technology advances into the nanoscale stage, approaching its physical limits, the Carbon Nanotube Field-effect Transistor (CNTFET) is considered to be the most significant transistor technology beyond Moore's era. The CNTFET has a quasi-one-dimensional structure so that the carrier can realize ballistic transport and has very high mobility. At the same time, a single CNTFET can integrate hundreds of nanowires as the conductive channels, enabling significant current transport capabilities even in low supply voltage, thereby providing a foundational basis for achieving nanoscale ultra-large-scale analog/logic circuits. This paper summarizes the development status of the CNTFET compact model and digital/analog/RF integrated circuits. The challenges faced by SPICE modeling and circuit design are analyzed. Meanwhile, solutions to these challenges and development trends of carbon-based transistors are discussed. Finally, the future application prospects of carbon-based integrated circuits are presented.

Effects of teleworking on wellbeing from a gender perspective: a systematic review

Telework has been seen as a crucial tool for enhancing work-home balance, and potentially boosting employee wellbeing. However, contradictory findings highlight the necessity of integrating a gender perspective. This study aims to find out the psychosocial effects of teleworking on wellbeing from a gender perspective through a systematic review since 2010 till 2022. We used PRISMA, SPICE and PICOS models to finally select 37 studies, considering both quantitative and qualitative design perspectives. More than half of the reviewed articles (22) found that telework has negative effects on work-family interaction and work-family balance; and, as expected, these negative effects were greater for women, such as increasing dissatisfaction with work, life and free time. Studies reviewed show that women teleworkers report increased work-family conflict and traditional gender roles relating to household and family care responsibilities. We have found also that 10 studies observed positive effects of telework for both men and women, whilst five papers report both positive and negative effects on wellbeing. Lastly, we discuss the advantages and disadvantages of teleworking from a gender perspective considering the results we have found.

СИГНАЛЬНА МАКРОМОДЕЛЬ ОПТОПАРИ НА СТРУКТУРАХ ОРГАНІЧНОЇ ЕЛЕКТРОНІКИ

The paper is devoted to the basic approaches to the realization of the macromodel of optocouplers on organic structures for sensor devices. It is shown that the use of such structures is largely limited due to the time drift of parameters and temperature instability. In the course of the research, the possibility of compensating for these parameters directly during the operation of organic optocouples by measuring and analyzing the parameter drift was established. For this purpose, specialized built-in in-situ diagnostic systems and controlled signal transducers are used. In order to verify the functioning and optimize the parameters of signal transducers of built-in in- situ diagnostic systems, the paper describes the main approaches and the result of the implementation of the optocouple macromodel. The macromodel provides the ability to specify the components of sensor electronics optocouplers in accordance with the approaches and syntax of SPICE modeling and reflects parametric modulation with changes in ambient temperature, time instability, and flicker noise. The macromodel consists of five modules that describe the processes and specify the characteristics of the optocoupler: the light emitter (LED), self-heating of the optocoupler structure by the supply current, the optical medium or active layer of the optosensor, time drift and flicker noise, and the light receiver (photodiode or photoresistor). The modules are represented by substitution schemes of electrical components in accordance with the principle of functional analogy. The main approaches to specifying the parameters of macromodel components and examples of parametric studies based on it are considered. The use of the developed model makes it possible to obtain the values of compensation parameters for operational adjustment, in accordance with the operating conditions and properties of organic structures.

Design space exploration and power optimization of STT MRAM using trimmed fin Asymmetric FinFET

The switching current requirement of magnetic tunnel junction (MTJ) in STT MRAM is highly asymmetric. This results in unnecessary higher power dissipation due to excess write current in one direction. To tackle this issue, we present a novel STT MRAM cell that utilizes the trimmed fin asymmetric FinFET (A-FinFET) as an access device, which has an impressive asymmetry in the bidirectional current and smaller gate capacitance compared to the symmetric FinFET device. Our approach begins with the development of a SPICE model for the A-FinFET, achieved by calibrating the BSIM-CMG model to replicate the characteristics of the A-FinFET. Further, it is used to evaluate the performance of STT MRAM using a comprehensive analysis from the cell to the architecture level, employing HSPICE and NVsim tools. The findings indicate significant enhancements with the proposed design, leading to a remarkable 18 % reduction in power consumption without compromising area. Additionally, the effective area of wordline drivers is reduced by 11 % compared to the symmetric device implementation.

Electro-Mechanical Characterization and Modeling of a Broadband Piezoelectric Microgenerator Based on Lithium Niobate.

Vibration energy harvesting based on piezoelectric transducers is an attractive choice to replace single-use batteries in powering Wireless Sensor Nodes (WSNs). As of today, their widespread application is hindered due to low operational bandwidth and the conventional use of lead-based materials. The Restriction of Hazardous Substances legislation (RoHS) implemented in the European Union restricts the use of lead-based piezoelectric materials in future electronic devices. This paper investigates lithium niobate (LiNbO3) as a lead-free material for a high-performance broadband Piezoelectric Energy Harvester (PEH). A single-clamped, cantilever beam-based piezoelectric microgenerator with a mechanical footprint of 1 cm2, working at a low resonant frequency of 200 Hz, with a high piezoelectric coupling coefficient and broad bandwidth, was designed and microfabricated, and its performance was evaluated. The PEH device, with an acceleration of 1 g delivers a maximum output RMS power of nearly 35 μW/cm2 and a peak voltage of 6 V for an optimal load resistance at resonance. Thanks to a high squared piezoelectric electro-mechanical coupling coefficient (k2), the device offers a broadband operating frequency range above 10% of the central frequency. The Mason electro-mechanical equivalent circuit was derived, and a SPICE model of the device was compared with experimental results. Finally, the output voltage of the harvester was rectified to provide a DC output stored on a capacitor, and it was regulated and used to power an IoT node at an acceleration of as low as 0.5 g.

The Effect of Metaverse Concert Characteristics on User Re-Participation Intention: A Combination of the ETAM and the SPICE Model

Metaverse concerts transcend temporal and spatial constraints, emerging as highly sought-after virtual domains on contemporary metaverse platforms. To advance the sustainability of metaverse concerts, this study integrates the SPICE (Metaverse Concert Characteristics) model with the Extended Technology Acceptance Model (ETAM), grounded in the Stimulus-Organism-Response (SOR) theory, introducing media richness to elucidate the characteristics of metaverse concerts. Additionally, we investigate the moderating influence of emotional attachment, contributing a novel dimension to this study. The proposed framework underwent empirical validation through the collection of 521 valid responses, employing a convenience sampling method. The results indicate that concurrence, interoperability, and economic flow wield no direct impact on users’ re-participation intentions, and media richness exhibits no influence on perceived usefulness. Furthermore, the relationships of other variables in the model are positively correlated, and emotional attachment plays a moderating role in the framework. Our findings establish a theoretical underpinning for the sustainable evolution of metaverse concerts, holding practical implications for stakeholders, including managers, users, practitioners, and researchers in the field.

Automatic test-bench for SiC power devices using LabVIEW

Abstract This paper is devoted to the improvement existing models of electronics devices, which are used in powers electronics as switching devices, and investigate a LabVIEW-based automatic test-bench for Silicon carbide (SiC) power devices. In recent years, power electronic devices are required to be capable handle with higher voltage, leads to development of new generation of power electronic devices, such as SiC devices. However, using a simulation platform, such as Spice, to diminish the complexity of power electronic design with these new devices is hindered by the lack of precise models. The proposed test-bench enables not only measuring static characteristics of SiC power devices, but also extracting key parameters required by simulations. These extracted parameters are then employed in the existing device model, and the simulation results which are based on the model with original parameters and models with extracted parameters are compared with measured results. The comparison clearly demonstrates that parameters obtained from the proposed test-bench significantly enhance the Spice model.