Abstract In the past few years, research on advanced ultrafast photonic devices has maintained great interest throughout the laser community. As a semiconductor material with excellent nonlinear saturation absorption characteristics, GaAs has been used in solid-state and fiber lasers as a mode-locker. However, pulse widths that have been reported in the searchable published literature are all longer and the shortest is also tens of picoseconds. Femtosecond pulse widths, desired for variety of applications, have not yet been reported in GaAs-based pulsed lasers. In this work, we further explore the nonlinear characteristics of GaAs that magnetron sputtered onto the surface of the tapered fiber and its application in the generation of femtosecond laser via effective dispersion optimization and nonlinearity management. With the enhanced interaction between evanescent wave and GaAs nanosheets, mode-locked soliton pulses as short as 830 fs are generated at 4.64 MHz repetition rates. As far as we know, this is the first time that femtosecond-level pulses are generated with a GaAs-based SA. In addition, soliton molecule, including dual-pulse state are also realized under stronger pumping. This work demonstrates that GaAs-based photonic device has good application prospects in effective polymorphous ultrashort pulsed laser generation.
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