Mode-locked Semiconductor Laser Research Articles

Dual-wavelength channel GHz repetition rate mode-locked VECSEL cavities sourced from a common gain medium.

Mode-locked vertical external cavity semiconductor lasers are a unique class of nonlinear dynamical systems driven far from equilibrium. We present a novel, to the best of our knowledge, experimental result, supported by rigorous microscopic simulations, of two coexisting mode-locked V-cavity configurations sourced by a common gain medium and operating as independent channels at angle controlled separated wavelengths. Microscopic simulations support pulses coincident on the common gain chip extracting photons from a nearby pair of coexisting kinetic holes burned in the carrier distributions.

High-energy picosecond pulses with a single spatial mode from a passively mode-locked, broad-area semiconductor laser

We present a mode-locked semiconductor laser oscillator that emits few picosecond pulses (5-8ps at a repetition rate of 379MHz and wavelength of 1064nm) with record peak power (112W) and pulse energy (0.5nJ) directly out of the oscillator (with no amplifier). To achieve this high power performance we employ a high-current broad-area, spatially multi-mode diode amplifier (0.3×5mm), placed in an external cavity that enforces oscillation in a single spatial mode. Consequently, the brightness of the beam is near-ideal (M2 = 1.3). Mode locking is achieved by dividing the large diode chip (edge emitter) into two sections with independent electrical control: one large section for gain and another small section for a saturable absorber. Precise tuning of the reverse voltage on the absorber section allows to tune the saturation level and recovery time of the absorber, providing a convenient knob to optimize the mode-locking performance for various cavity conditions.

High-peak-power optically pumped passively mode-locked semiconductor laser with minimal components.

A high-peak-power sub-500-fs mode-locked optically pumped semiconductor laser is innovatively developed with only three components of a semiconductor gain chip, a semiconductor saturable absorber, and a focusing lens. The developed laser near the threshold pump power of 3.9 W can be operated with stable fundamental mode locking. The laser output can be naturally turned into the stable harmonic mode locking (HML) with the order gradually changing from 2nd to 8th by increasing the pump power from 4.0 W to 5.0 W. Due to the onset of the high-order transverse modes, the order of HML is fixed at 8th for a pump power greater than 5.0 W. For the HML with order less than 8th, the overall peak power and pulse width in the HML are approximately 0.36 kW and 550 fs, respectively. In the operation of 8th-order HML, the minimum pulse width and maximum peak power can reach 480 fs and 0.95 kW, respectively.

Highly coherent hybrid dual-comb spectrometer.

Dual comb spectroscopy (DCS) is a broadband technique offering high resolution and fast data acquisition. Current state-of-the-art designs are based on a pair of fiber or solid-state lasers, which allow broadband spectroscopy but require a complicated stabilization setup. Semiconductor lasers are tunable, cost-effective, and easily integrable while limited by a narrow bandwidth. This motivates a hybrid design combining the advantages of both systems. However, establishing sufficiently long mutual coherence time remains challenging. This work describes a hybrid dual-comb spectrometer comprising a broadband fiber laser (FC) and an actively mode-locked semiconductor laser (MLL) with a narrow but tunable spectrum. A high mutual coherence time of around 100 seconds has been achieved by injection locking the MLL to a continuous laser (CW), which is locked on a single line of the FC. We have also devised a method to directly stabilize the entire spectrum of FC to a high finesse cavity. This results in a long term stability of 5 × 10-12 at 1 second and 5 × 10-14 at 350 seconds. Additionally, we have addressed the effect of cavity dispersion on the locking quality, which is important for broadband comb lasers.

Two-color Semiconductor Mode-locked Laser system for Multiphoton Imaging Applications.

We demonstrate an all-semiconductor mode-locked laser system consisting of two external cavity mode-locked lasers operating at wavelengths 834 nm and 974 nm which use semiconductor optical amplifiers as gain media. The two-color laser system emits picosecond pulses with average powers of 25 mW and 60 mW resulting in peak powers exceeding 100 W and 80 W respectively. Synchronized output pulse trains from the lasers with a repetition rate of 282 MHz exhibit a relative timing jitter of 7.3 ps. Fiber coupled output from the laser system delivers an ideal output beam with TEM00 mode profile. Peak power densities >1 GW/cm2 can be achieved by focusing the output beam to a smaller spot with 4 μm diameter, which is crucial for applications that requires excitation of optical nonlinearities.

Temporal localized Turing patterns in mode-locked semiconductor lasers

Spatiotemporal mode-locking is a promising lasing regime for developing coherent sources for multimode nonlinear photonics. In this paper we show that large-aspect-ratio vertical external-cavity surface-emitting lasers (VECSELs) can be operated in this regime. The emitted pulses exhibit a spatial profile resulting from the phase locking between an axial plane wave and a set of tilted waves having a hexagonal arrangement in the Fourier space. Moreover, we show that these pulsating patterns are temporally localized, i.e., they can be individually addressed by pulsing the optical pump. The theoretical analysis discloses that the emergence of these pulsating patterns is a signature of a Turing instability whose critical wave vector depends on the spherical aberrations of the optical elements. Our result reveals that large-aspect-ratio VECSELs offer unique opportunities for studying fully developed spatiotemporal dynamics and for applications to multidimensional control of light.

Advances of semiconductor mode-locked laser for optical frequency comb generation

<p indent="0mm">Semiconductor mode-locked lasers (MLLs) can provide coherent optical frequency combs (OFCs) with high repetition rates and output power, which have been recognized as potential multi-wavelength sources used in optical communication field due to their compactness, high-efficiency, and low-cost properties. In this article, we have reviewed recent development of semiconductor MLL-based frequency comb generation. Different approaches of semiconductor MLLs for OFC generation are synoptically summarized based on various material platforms. The representative progress of III-V semiconductor MLLs on III-V platform and especially on Si substrates is both discussed for the applications in integrated silicon photonics.

Investigation of locked operation in a system of two passively mode-locked semiconductor lasers under weak lateral coupling

We study theoretically the operation of two semiconductor passively mode-locked lasers laterally coupled through evanescent fields. The investigation is carried out using a time domain traveling wave numerical model for two-section lasers (gain and absorption) enhanced to include weak mutual coupling. The study of the coupled system shows that although the operation is dominated mostly by instabilities and amplitude modulated pulse trains, under specific conditions, stable mode locking with low intensity noise and time-synchronized pulses emerges. The influence of operational and geometrical parameters on the coupled dynamics is identified and discussed.

An Equivalent Circuit Model of Passively Mode-Locked Hybrid Silicon Laser

In this letter, for the first time, we present a circuit-level model (CLM) of semiconductor mode-locked laser (MLL) based on delay differential equation (DDE). To confirm that our model is valid for different structures, the CLM of the hybrid silicon MLL is analysed for the cases without and with an intracavity filter. The ability of CLMs to replicate dynamic behavior of repetition rate is demonstrated. Furthermore, the effect of linewidth enhancement factor (LEF) on pulse width and peak power is investigated. The presented model simulates transition from mode-locking to chaotic regime by changing LEF, rigorously. The results of CLM are in good agreement with numerical and experimental results reported in other works. By a versatile procedure introduced in this letter for CLM, different type of MLLs based on DDE can be developed.

Nonlinear reflectivity of AlGaInP SESAMs for mode locking in the red spectral range.

Mode-locked vertical external-cavity semiconductor lasers (VECSELs) are a wavelength-versatile laser that relies on a semiconductor saturable absorber mirror (SESAM) to initiate pulsed emission while simultaneously significantly influencing the pulse's properties. A SESAM can be characterized using a nonlinear reflectivity setup, realized here in the red spectral range around 660 nm and achieving a moderate peak-to-peak variation of 0.17%. We use our home-built mode-locked VECSEL to reach a high maximum fluence up to 430 µJ/cm2 with strongly chirped 7.5 ps pulses. This allows the first-of-its-kind characterization of GaInP quantum well SESAMs, thereby revealing saturation fluences of 38 µJ/cm2 and 34 µJ/cm2 with modulation depths of 5% and 10.3% for SESAMs comprising one or two active quantum wells, respectively. For all structures, a nonsaturable loss of 2.8% is found and attributed to scattering loss.

All Optical Stabilizations of Nano-Structure-Based QDash Semiconductor Mode-Locked Lasers Based on Asymmetric Dual-Loop Optical Feedback Configurations

We report feedback-induced frequency oscillations using a power-split-ratio through asymmetric dual-loop optical feedback (Loop I: ~2.2 km and Loop II: ~20 m) subject to a self-mode-locked two-section QDash laser emitting at 1550 nm and operating at 21 GHz repetition rate. To assess the suppression of frequency resonances, three chosen combinations of feedback power (Loop I: −27.27 dB and Loop II: −19.74 dB, Loop I: −22 dB and Loop II: −22 dB, and Loop I: −19.74 dB and Loop II: −27.27 dB) through asymmetric dual-loop optical feedback have been studied. Based on the chosen coupling strength, an optimum feedback ratio that yields better side-mode suppression has been identified. Our results demonstrate that side-mode suppression can be achieved by the fine adjustment of coupling power through either cavity of dual-loop feedback configurations. Furthermore, we have further demonstrated that frequency fluctuations from the RF spectra can be filtered by carefully selecting the delay phase of the second cavity. Our experimental findings suggest that semiconductor mode-locked lasers based on dual-loop feedback configurations can be used to develop noise oscillations free from integrated photonic oscillators for potential applications in telecommunications, multiplexing, and frequency-comb generation.

Influence of time-delayed feedback on the dynamics of temporal localized structures in passively mode-locked semiconductor lasers.

In this paper, we analyze the effect of optical feedback on the dynamics of a passively mode-locked ring laser operating in the regime of temporal localized structures. This laser system is modeled by a set of delay differential equations, which include delay terms associated with the laser cavity and the feedback loop. Using a combination of direct numerical simulations and path-continuation techniques, we show that the feedback loop creates echoes of the main pulse whose position and size strongly depend on the feedback parameters. We demonstrate that in the long-cavity regime, these echoes can successively replace the main pulses, which defines their lifetime. This pulse instability mechanism originates from a global bifurcation of the saddle-node infinite-period type. In addition, we show that, under the influence of noise, the stable pulses exhibit forms of a behavior characteristic of excitable systems. Furthermore, for the harmonic solutions consisting of multiple equispaced pulses per round-trip, we show that if the location of the pulses coincides with the echo of another, the range of stability of these solutions is increased. Finally, it is shown that around these resonances, branches of different solutions are connected by period-doubling bifurcations.

High-Efficiency Quantum Dot Lasers as Comb Sources for DWDM Applications

The trend of data center transceivers is to increase bandwidth while simultaneously decreasing their size, power consumption, and cost. While data center links have previously relied on vertical-cavity surface-emitting lasers (VCSELs) or in-plane lasers using coarse wavelength division multiplexing (WDM) to encode data, recently, dense WDM (DWDM) has moved to the forefront for next-generation links. Several approaches exist as light sources for DWDM links; DFB arrays, nonlinear microcombs, and semiconductor mode-locked lasers (MLLs). This paper focuses on quantum dot MLLs (QDMLLs), which currently offer the best efficiency, simplicity, and size. The efficiency of optical combs generated by QDMLLs is analyzed in depth in this study.

Modelling two-laser asynchronous optical sampling using a single 2-section semiconductor mode-locked laser diode.

We present a theoretical overview and a proposed methodology which demonstrates SLASOPS (single laser asynchronous optical sampling) as a single-laser alternative to the conventional two-laser ASOPS technique. We propose the optical and electronic setup in which SLASOPS may be achieved experimentally with a single 2-section mode-locked laser diode as the pulsed-laser source and simulate how asynchronous optical sampling is generated and detected theoretically. We highlight the technique's ability to provide customizable scan ranges, scan rates and scan resolutions through variation of the imbalance in the interferometer arms and by tuning the repetition rate of the pulsed-laser source, which we present as optical cross-correlations between pulse pairs. We incorporate jitter into the system mathematically to assess the limitations on resolving both intensity and interferometric cross-correlation traces and to investigate the effects of averaging such traces in real-time. Analysis is then carried out on cross-correlation trace amplitude, width, and temporal positioning in order to discuss the technique's ability for deployment in typical optical sampling applications. In particular we note SLASOPS' ability to conduct asynchronous optical sampling using only a single laser, halving both the expense and technical requirements, doing so at megahertz scan rates, and within a spatial precision of just a few microns.

Multi-wavelength 128 Gbit s−1 λ −1 PAM4 optical transmission enabled by a 100 GHz quantum dot mode-locked optical frequency comb

Semiconductor mode-locked lasers (MLLs) with extremely high repetition rates are promising optical frequency comb (OFC) sources for their usage as compact, high-efficiency, and low-cost light sources in high-speed dense wavelength-division multiplexing transmissions. The fully exploited conventional C- and L- bands require the research on O-band to fulfil the transmission capacity of the current photonic networks. In this work, we present a passive two-section InAs/InGaAs quantum-dot (QD) MLL-based OFC with a fundamental repetition rate of ∼100 GHz operating at O-band wavelength range. The specially designed device favours the generation of nearly Fourier-transform-limited pulses in the entire test range by only pumping the gain section while with the absorber unbiased. The typical integrated relative intensity noise of the whole spectrum and a single tone are −152 and −137 dB Hz−1 in the range of 100 MHz–10 GHz, respectively. Back-to-back data transmissions for seven selected tones have been realised by employing a 64 Gbaud four-level pulse amplitude modulation format. The demonstrated performance shows the feasibility of the InAs QD MLLs as a simple structure, easy operation, and low power consumption OFC sources for high-speed fibre-optic communications.

Demonstration of an external cavity semiconductor mode-locked laser.

Electrically pumped semiconductor mode-locked lasers (SMLs) are promising in a wide range of applications due to compact size, high energy efficiency, and low cost. However, the long gain interaction length increases the spontaneous emission noise. In this Letter, an external cavity structure is adopted to improve the SML noise performance, as well as the flexibility to adjust the repetition rate. Two external cavity SMLs with repetition rates of 255 MHz and 10 GHz are demonstrated. For the 10 GHz SML, the signal-noise-ratio and radio frequency linewidth of the fundamental frequency reach 81.1 dB and 40 Hz, respectively. The high performance makes the laser a promising light source for microwave and communication applications.

Phase noise reduction of a 2 µm passively mode-locked laser through hybrid III-V/silicon integration

Passively mode-locked semiconductor lasers are promising for a wide variety of chip-scale high-speed and high-capacity applications. However, the phase noise/timing jitter of such light sources are normally high, which restricts their applications. A simple and low-cost chip-scale solution to address this issue is highly desired. In this work, a two-section GaSb-based passively mode-locked laser (MLL) emitting in the 2 µm wavelength band with a fundamental repetition frequency of ∼ 13.35 G H z is presented. Dramatic phase noise reduction is achieved through its hybrid integration with a silicon photonic circuit which provides chip-scale optical feedback to the MLL. Under a fixed laser bias condition, more than 50 × improvement of radio frequency linewidth to sub-kilohertz level is realized by carefully adjusting the feedback strength (via a p-i-n junction-based variable optical attenuator) and optical length of the feedback loop (via integrated heater on the silicon waveguide). The phase noise reaches − 113 d B c / H z at 1 MHz offset with integrated timing jitters of 274 fs (100 kHz to 100 MHz) and 123 fs (4 to 80 MHz). At the same time, the pulse-to-pulse jitter reaches as low as 7.8 fs/cycle. These values are record low for 2 µm passively mode-locked semiconductor lasers. Our results prove the feasibility of MLL noise reduction with the chip-scale hybrid III-V/silicon integration method, bringing low-noise light sources to the silicon platform. Moreover, this work also suggests the potential miniaturization of various other functional setups with the same method.

Control of Timing Stability, and Suppression in Delayed Feedback Induced Frequency-Fluctuations by Means of Power Split Ratio and Delay Phase-Dependent Dual-Loop Optical Feedback

We experimentally demonstrated a power split ratio and optical delay phase dependent dual-loop optical feedback to investigate the suppression of frequency-fluctuations induced due to delayed optical feedback. The device under investigation is self-mode-locked (SML) two-section quantum-dash (QDash) laser operating at ∼21 GHz and emitting at ∼1.55 μm. The effect of two selective combinations of power split ratios (Loop-I: −23.29 dB and Loop-II: −28.06 dB, and Loop-I and Loop-II: −22 dB) and two optical delay phase settings ((i) stronger cavity set to integer resonance and fine-tuning the weaker cavity, (ii) weaker cavity set to integer resonance and fine-tuning of stronger cavity) on the suppression of cavity side-bands have been studied. Measured experimental results demonstrate that delayed optical feedback induced frequency-fluctuations can be effectively suppressed on integer resonance as well as on full delay range tuning (0–84 ps) by adjusting coupling strength −22 dB through Loop-I and Loop-II, respectively. Our findings suggest that power split ratio and delays phase-dependent dual-loop optical feedback can be used to maximize the performance of semiconductor mode-locked lasers.

Hybrid integrated mode-locked laser diodes with a silicon nitride extended cavity

Integrated semiconductor mode-locked lasers have shown promise in many applications and are readily fabricated using generic InP photonic integration platforms. However, the passive waveguides offered in such platforms have relatively high linear and nonlinear losses that limit the performance of these lasers. By extending such lasers with, for example, an external cavity, the performance can be increased considerably. In this paper, we demonstrate for the first time that a high-performance mode-locked laser can be achieved with a butt-coupling integration technique using chip scale silicon nitride waveguides. A platform-independent SiN/SU8 coupler design is used to couple between the silicon nitride external cavity and the III/V active chip. Mode-locked lasers at 2.18 GHz and 15.5 GHz repetition rates are demonstrated with Lorentzian RF linewidths several orders of magnitude smaller than what has been demonstrated on monolithic InP platforms. The RF linewidth was 31 Hz for the 2.18 GHz laser.

Mid-infrared supercontinuum generation of 1.14 W in a fluoroindate fiber pumped by a fast gain-switched and mode-locked thulium-doped fiber laser system

We report the generation of a spectrally flat supercontinuum in a fluoroindate ( I n F 3 ) fiber with a maximum time-averaged output power of 1.14 W and a spectrum extended to 4.75 µm. The pump source was a fast gain-switched and semiconductor saturable absorber mirror mode-locked thulium Tm-doped fiber laser followed by a cascade of two Tm-doped fiber amplifiers. The repetition rates of the gain-switched pulses and mode-locked sub-pulses were 50 kHz and 111 MHz, respectively, whereas the duration of sub-pulses recorded within a gain-switched pulse envelope was ∼ 110 p s . This home-built pump laser system provided an output average power of 2.45 W at a central wavelength of 2 µm. To the best of our knowledge, this is the first paper on supercontinuum generation in an I n F 3 fiber pumped by a fast gain-switched and mode-locked laser system. This approach is promising for further efficient continuum generation in the mid-infrared region.