Mobility Of Field-effect Transistors Research Articles

Benzodipyrrolidone-based donor-acceptor semiconducting polymers with high hole mobility and noncovalent conformational locks

Constructing highly coplanar polymer backbone plays an important role in boosting the carrier mobility of organic field effect transistors (OFETs) devices. In this study, based on noncovalent conformational locks strategy, we synthesized the electron-acceptor (A) monomer via introducing 3-dodecylthiophene on strong electron-deficient planar benzodipyrrolidone and the electron-donor (D) monomers containing different numbers (0–2) of fluorine atoms at different positon. A series of novel D-A copolymers, namely PBDP-F0, PBDP-F1 and PBDP-F2 with different backbone conformational locks through F⋯S and F⋯H–C noncovalent interactions, were obtained via Stille polycondensation. For the application in an organic field-effect transistor, all the polymers exhibited p-type charge transport characteristics and good performance with the highest hole mobilities as 0.24 cm2 V−1 s−1 for PBDP-F0, 0.87 cm2 V−1 s−1 for PBDP-F1 and 1.93 cm2 V−1 s−1 for PBDP-F2, respectively. AFM and GIXRD investigations indicated that all polymers take predominantly edge-on orientation packing mode because of the rigid and coplanar backbone conformation and the annealing films exhibited small π-π stacking distances of 3.73, 3.71 and 3.69 Å for PBDP-F0, PBDP-F1 and PBDP-F2 respectively. This work demonstrates that modified BDP-based D-A copolymers with conformational locks has a potential application in the high-performance semiconductor materials.

Long-range polymer ordering by directional coating to remarkably enhance the charge carrier mobility in PCDTPT-based organic field-effect transistors

With the wide potential of organic field-effect transistors in all the modern electronic circuitries, researchers are grappling with the challenge of poor charge transport and hence lower mobility in organic polymers. Low-charge carrier mobility is mainly due to disorder in the molecular packing of organic semiconductors along with other factors, such as impurities, defects and interactions between molecules. The current research work has been conducted to align the molecular chains of poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-‌‌‌b:5,4-‌b′]‌dithiophen-2-yl)-alt-[1,2,5]thiadiazolo-[3,4-c]pyridine] (PCDTPT) using directional coating techniques such as dip coating and brush coating on nano-grooved substrates. Long-range order of polymer chains was clearly observed along the direction of brush coating and nanogrooves in optical and atomic force microscope (AFM) images while transmission spectra confirmed decreased pi–pi stacking for the polymer films deposited by this technique. By comparing the mobility performance of brush-coated devices with other techniques, we found a remarkable mobility enhancement of 90 times that of conventional spin-coated device and 24 times enhancement compared with the dip-coated device for the case when the alignment of polymer chains was parallel to the channel. All the fabrication and characterizations were performed in the ambient environment. This study demonstrates a potential approach to align the polymers on long and short ranges hence providing a route for high-performing devices in ambient conditions.

Low Contact Resistance Organic Single-Crystal Transistors with Band-Like Transport Based on 2,6-Bis-Phenylethynyl-Anthracene.

Contact resistance has become one of the main bottlenecks that hinder further improvement of mobility and integration density of organic field-effect transistors (OFETs). Much progress has been made in reducing contact resistance by modifying the electrode/semiconductor interface and decreasing the crystal thickness, however, the development of new organic semiconductor materials with low contact resistance still faces many challenges. Here, 2,6-bis-phenylethynyl-anthracene (BPEA) is found, which is a material that combines high mobility with low contact resistance. Single-crystal BEPA OFETs with a thickness of ≈20nm demonstrated high mobility of 4.52cm2V-1s-1, contact resistance as low as 335Ωcm, and band-like charge transport behavior. The calculated compatibility of the EHOMO of BPEA with the work function of the Au electrode, and the decreased |EHOMO-ΦAu| with the increase of external electric field intensity from source to gate both contributed to the efficient charge injection and small contact resistance. More intriguingly, p-type BPEA as a buffer layer can effectively reduce the contact resistance, improve the mobility, and meanwhile inhibit the double-slope electrical behavior of p-channel 2,6-diphenyl anthracene (DPA) single-crystal OFETs.

Estimation of the Charge Mobility of Phenanthroline derivatives with the view of Density Functional Theory: Reorganization Energy and Charge Transfer Integral are in play

Molecular arrangement and noncovalent interactions in organic materials greatly influence the charge mobility in organic light-emitting diodes (OLEDs), organic photovoltaics (OPVs), and organic field-effect transistors (OFETs). In the light of the this argument, we examined the electronic properties of the phenanthroline derivatives by considering the charge mobility with the combination of density functional theory and Marcus Charge Transfer Theory. The drift electron mobility of the molecule 1 and 2 were determined to 21.13 cm2 V-1 s-1 and 18.00 cm2 V-1 s-1, respectively through J type π⋯π stacking interactions created by small perpendicular distances between the adjacent rings. The effective charge pathways of the molecules were generated with strong π⋯π stacking interactions consolidated by noncovalent interactions in their solid phases. The electron reorganization energy for both molecules were determined smaller than that of holes which means they have n-type semiconductor properties. The charge transfer integrals were calculated with the optimization of molecules’ dimer configurations that the theoretical results demonstrate the charge transfer integral depends on the distance between the stacking rings. High charge transfer integral and small reorganization energy give the high charge mobility fort he semiconductor molecules. Beside the mobility, energy band gap, ionization potential, electron and hole injection barriers of the molecules were interpreted to further understand their electronic properties. Due to the small LUMO values which provide n-type molecule and small electron injection barrier. From the our work both molecules can be effective n type organic semiconductor devices with the high mobility and can be modified for more efficient charge transport in phenanthroline derivatives.

A method for direct determination of voltage dependent contact resistance and mobility of an organic field effect transistor

A method for direct determination of voltage dependent contact resistance and mobility of an organic field effect transistor

C-Axis Aligned 3 nm Thick In2O3 Crystal Using New Liquid DBADMIn Precursor for Highly Scaled FET Beyond the Mobility-Stability Trade-off.

Oxide semiconductors (OS) are attractive materials for memory and logic device applications owing to their low off-current, high field effect mobility, and superior large-area uniformity. Recently, successful research has reported the high field-effect mobility (μFE) of crystalline OS channel transistors (above 50 cm2 V-1 s-1). However, the memory and logic device application presents challenges in mobility and stability trade-offs. Here, we propose a method for achieving high-mobility and high-stability by lowering the grain boundary effect. A DBADMIn precursor was synthesized to deposit highly c-axis-aligned C(222) crystalline 3 nm thick In2O3 films. In this study, the 250 °C deposited 3 nm thick In2O3 channel transistor exhibited high μFE of 41.12 cm2 V-1 s-1, Vth of -0.50 V, and SS of 150 mV decade-1 with superior stability of 0.16 V positive shift during PBTS at 100 °C, 3 MV cm-1 stress conditions for 3 h.

Improving electron mobility in MoS2 field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

A structural phase incorporation strategy was proposed to improve the electron mobility of MoS2 FETs up to 237 cm2 V−1 s−1.

Structure-Property Relationships for the Electronic Applications of Bis-Adduct Isomers of Phenyl-C61 Butyric Acid Methyl Ester.

Higher adducts of a fullerene, such as the bis-adduct of PCBM (bis-PCBM), can be used to achieve shallower molecular orbital energy levels than, for example, PCBM or C60. Substituting the bis-adduct for the parent fullerene is useful to increase the open-circuit voltage of organic solar cells or achieve better energy alignment as electron transport layers in, for example, perovskite solar cells. However, bis-PCBM is usually synthesized as a mixture of structural isomers, which can lead to both energetic and morphological disorder, negatively affecting device performance. Here, we present a comprehensive study on the molecular properties of 19 pure bis-isomers of PCBM using a variety of characterization methods, including ultraviolet photoelectron spectroscopy, thermal gravimetric analysis, differential scanning calorimetry, single crystal structure, and (time-dependent) density functional theory calculation. We find that the lowest unoccupied molecular orbital of such bis-isomers can be tuned to be up to 170 meV shallower than PCBM and up to 100 meV shallower than the mixture of unseparated isomers. The isolated bis-isomers also show an electron mobility in organic field-effect transistors of up to 4.5 × 10-2 cm2/(V s), which is an order of magnitude higher than that of the mixture of bis-isomers. These properties enable the fabrication of the highest performing bis-PCBM organic solar cell to date, with the best device showing a power conversion efficiency of 7.2%. Interestingly, we find that the crystallinity of bis-isomers correlates negatively with electron mobility and organic solar cell device performance, which we relate to their molecular symmetry, with a lower symmetry leading to more amorphous bis-isomers, less energetic disorder, and higher dimensional electron transport. This work demonstrates the potential of side chain engineering for optimizing the performance of fullerene-based organic electronic devices.

Impact of multi-domain effect on the effective carrier mobility of ferroelectric field-effect transistor

HfO2-based ferroelectric field-effect transistors (FeFETs) are a promising candidate for multilevel memory manipulation and brain-like computing due to the multi-domain properties of the HfO2 FE films based polycrystalline structure. Although there have been many reports on the working mechanism of the HfO2-based FeFET and improving its reliability, the impact of multi-domain effect on the effective carrier mobility (μ channel) has not been carried out yet. The effective μ channel determines the level of readout current and affects the accuracy of the precision of peripheral circuit. In this work, FeFETs with HfZrO x FE gate dielectric were fabricated, and the effect of write (or erase) pulses with linear gradient variation on the effective μ channel was studied. For the multiple downward polarization under write pulses, the μ channel degrades as the domains gradually switch to downward. This is mainly due to the enhancement of the scattering effect induced by the positive charges (e.g. oxygen vacancies ) trapping and the increase of channel carrier density. For the erase pulses, the μ channel increases as the domains gradually reverse to upward, which is mainly due to the reduction of the scattering effect induced by the detrapping of positive charges and the decrease of channel carrier density. In addition, the modulation effect of multilevel polarization states on μ channel is verified by numerical simulation. This effect provides a new idea and solution for the development of low power HfO2-based FeFETs in neuromorphic computing.

Synthesis of component-controllable monolayer MoxW(1-x)S2ySe2(1-y) alloys with continuously tunable band gap and carrier type.

Alloying can effectively modify electronic and optical properties of two-dimensional (2D) transition metal dichalcogenides (TMDs). However, efficient and simple methods to synthesize atomically thin TMD alloys need to be further developed. In this study, we synthesized 25 monolayer MoxW(1-x)S2ySe2(1-y) alloys by using a new liquid phase edge epitaxy (LPEE) growth method with high controllability. This straightforward approach can be used to obtain monolayer materials and operates on a self-limiting growth mechanism. The process allows the liquid solution to come into contact with the two-dimensional grains only at their edges, resulting in epitaxy confined only along the in-plane direction, which produces exclusively monolayer epitaxy. By controlling the weight ratio of MoS2/WSe2 (MoSe2/WS2), 25 monolayer MoxW(1-x)S2ySe2(1-y) alloys with different atomic ratios can be obtained on sapphire substrates, with band gap ranging from WS2 (1.55 eV) to MoSe2 (1.99 eV) and a continuously broad spectrum ranging from 623 nm to 800 nm. By adjusting the alloy composition, the carrier type and carrier mobility of alloy-based field-effect transistors can be modulated. In particular, the adjustable conductivity of MoxW(1-x)S2ySe2(1-y) alloys from n-type to bipolar type is achieved for the first time. This general synthetic strategy provides a foundation for the development of monolayer TMD alloys with multiple components and various 2D materials.

Facile Blending Strategy for Boosting the Conjugated Polymer Semiconductor Transistor's Mobility.

The optimization of field-effect mobility in polymer field-effect transistors (FETs) is a critical parameter for advancing organic electronics. Today, many challenges still persist in understanding the roles of the design and processing of semiconducting polymers toward electronic performance. To address this, a facile approach to solution processing using blends of PDPP-TVT and PTPA-3CN is developed, resulting in a 3.5-fold increase in hole mobility and retained stability in electrical performance over 3 cm2 V-1 s-1 after 20 weeks. The amorphous D-A conjugated structure and strong intramolecular polarity of PTPA-3CN are identified as major contributors to the observed improvements in mobility. Additionally, the composite analysis by X-ray photoelectron spectroscopy (XPS) and the flash differential scanning calorimetry (DSC) technique showed a uniform distribution and was well mixed in binary polymer systems. This mobility enhancement technique has also been successfully applied to other polymer semiconductor systems, offering a new design strategy for blending-type organic transistor systems. This blending methodology holds great promise for the practical applications of OFETs.

Conjugated Polymer Process Ontology and Experimental Data Repository for Organic Field-Effect Transistors.

Polymer-based semiconductors and organic electronics encapsulate a significant research thrust for informatics-driven materials development. However, device measurements are described by a complex array of design and parameter choices, many of which are sparsely reported. For example, the mobility of a polymer-based organic field-effect transistor (OFET) may vary by several orders of magnitude for a given polymer as a plethora of parameters related to solution processing, interface design/surface treatment, thin-film deposition, postprocessing, and measurement settings have a profound effect on the value of the final measurement. Incomplete contextual, experimental details hamper the availability of reusable data applicable for data-driven optimization, modeling (e.g., machine learning), and analysis of new organic devices. To curate organic device databases that contain reproducible and findable, accessible, interoperable, and reusable (FAIR) experimental data records, data ontologies that fully describe sample provenance and process history are required. However, standards for generating such process ontologies are not widely adopted for experimental materials domains. In this work, we design and implement an object-relational database for storing experimental records of OFETs. A data structure is generated by drawing on an international standard for batch process control (ISA-88) to facilitate the design. We then mobilize these representative data records, curated from the literature and laboratory experiments, to enable data-driven learning of process-structure-property relationships. The work presented herein opens the door for the broader adoption of data management practices and design standards for both the organic electronics and the wider materials community.

Novel extraction method for contact resistance and effective mobility in carbon nanotube field-effect transistors using S-parameter measurements

In this paper, a novel method is presented for the accurate extraction of key parameters of carbon nanotube field-effect transistors (CNTFETs) using S-parameter measurements. An equivalent circuit model, which utilizes lumped components based on the physical characteristics of the device, is employed to model the AC behavior (S-parameters) of the CNTFETs. The proposed method extracts the bias-dependent contact resistance, channel resistance, and gate-channel capacitance from the model at each gate voltage, thereby facilitating the extraction of the effective mobility of the CNT channel. At the last part of this paper, this method is used to quantitatively investigate the impact of electrostatic doping on CNTFETs. This new methodology offers an effective approach for characterizing CNTFETs, which is an important indicator for device optimization. Additionally, the proposed method can be easily applied to other types of FETs.

Effect of high temperature annealing on cryogenic transport properties of silicon MOSFETs with a thin SiO2/HfO2 stacked dielectric

Quantum computing is expected to break the computing power bottleneck with the help of quantum superposition and quantum entanglement. In order to fabricate fault-tolerant quantum computers for encoding quantum information, it is important to improve the cryogenic mobility of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) with a thin gate dielectric layer as much as possible. Based on a thin SiO2/HfO2 stacked dielectric, we investigate the effect of post-deposition annealing (PDA) temperature on the MOSFET cryogenic transport properties. The results show that silicon atoms will diffuse into the HfO2 to form silicates during PDA, leading to the HfO2 dielectric constant decrease. As the PDA temperature increases, the proportion of monoclinic hafnium oxide decreases and the tetragonal phase increases gradually. The oxygen vacancy content increases gradually, resulting in fixed charge density increases and the mobility decreases. The contribution of the forming gas annealing (FGA) to the mobility enhancement is clarified and the HfO2 recrystallization process is revealed from the perspective of long-time annealing. Finally, the mobility peak of silicon MOSFETs with thin SiO2/HfO2 dielectrics is enhanced to 1387 cm2(V·s)−1 at 1.6 K, which provides a technical pathway for the development of silicon-based quantum computation.

Surface-induced film structure for enhanced carrier transport of the conjugated/insulating polymer blends at a low semiconductor content

In this work, a donor-acceptor copolymer poly[(5,6-difluoro-2,1,3-benzothiadiazol-4,7-diyl)- alt(3,3‴-di(2-decyltetradecyl)-2,2'; 5′,2''; 5″,2‴-quaterthiophene-5,5‴-diyl)] (PffBT4T-2DT) has been blended with the insulating polystyrene (PS) to fabricate the field-effect transistors (FETs). The blend films deposited on the SiO2 dielectric by the octadecyltrichlorosilane (OTS) modification, exhibit the FET mobility 1–2 orders of magnitude higher than those on the unmodified dielectric, as well as a 10–100 folds enhancement of mobility with decreasing the PffBT4T-2DT ratios at the concentration range of 30 wt. %-5 wt. %. Detailed microstructural characterizations reveal that the OTS modification induces the change of phase-separation structure in the blend film, in which more aggregates of the PffBT4T-2DT are enriched near the semiconductor/dielectric interface. Furthermore, the OTS modification of substrate and the addition of PS facilitate the conversion from face-on to edge-on stacking orientation so that the edge-on packing structure dominates in the films with a semiconductor content of 5–10 wt. %. Based on these results, we propose that the remarkably elevated mobility at low PffBT4T-2DT contents is attributed to the enhanced edge-on arrangement of PffBT4T-2DT as well as the favorable interconnect network of chain aggregates formed at the semiconductor/dielectric interface for efficient carrier transport pathway.

Surface functionalized electrolyte-gated perovskite transistors with enhanced performance via insulating polymer additive

Perovskite–polymer microstructure engineering enables outstanding performance and improved stability in perovskite-based electronic devices. Here, we report perovskite/insulating polymer composite as engineered semiconductors for the simultaneous enhancement of the carrier mobility and environmental stability of electrolyte-gated field-effect transistors (FETs). To this end, we employed conventional poly(methyl methacrylate) (PMMA) and fluorinated poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF-HFP)) insulating polymers. The structural properties of the fabricated perovskite–polymer semiconductors were tuned by controlling the amount of insulating polymer in the perovskite–polymer composites. The optimized methylammonium lead iodide (MAPbI3) perovskite–PMMA-based FETs with a poly(3-hexylthiophene-2,5-diyl) (P3HT) surface passivation layer exhibited a highly-stable operation with a hole mobility of approximately 20 cm2 V−1 s−1 at ≤ 1.5 V and current on/off ratio of ∼103, which exceeds that of the MAPbI3-P(VDF-HFP)-based FETs under highly humid conditions (relative humidity ≈ 60–70%). This exceptional performance of our devices was attributed to the improved injection properties, increased grain size, and passivation of grain boundariesin the transistor channel coupled with the hydrophobic nature, and resistance of the insulating polymers to humidity. This study provide insights into achieving high-performance and environmentally stable perovskite transistor devices through combined bulk and surface passivation.

Strain Engineering for Enhancing Carrier Mobility in MoTe2 Field-Effect Transistors.

Molybdenum ditelluride (MoTe2 ) exhibits immense potential in post-silicon electronics due to its bandgap comparable to silicon. Unlike other 2D materials, MoTe2 allows easy phase modulation and efficient carrier type controlin electrical transport. However, its unstable nature and low-carrier mobility limit practical implementation in devices. Here, a deterministic method is proposed to improve the performance of MoTe2 devices by inducing local tensile strain through substrate engineering and encapsulation processes. The approach involves creatinghole arrays in the substrate and using atomic layer deposition grown Al2 O3 as an additional back-gate dielectric layer on SiO2 . The MoTe2 channel is passivated with a thick layer of Al2 O3 post-fabrication. This structure significantly improves hole and electron mobilities in MoTe2 field-effect transistors (FETs), approaching theoretical limits. Hole mobility up to 130 cm-2 V-1 s-1 and electron mobility up to 160 cm-2 V-1 s-1 are achieved. Introducing local tensile strain through the hole array enhances electron mobility by up to 6 times compared to the unstrained devices. Remarkably, the devices exhibit metal-insulator transition in MoTe2 FETs, with a well-defined critical point. This study presents a novel technique to enhance carrier mobility in MoTe2 FETs, offering promising prospects for improving2D material performance in electronic applications.

Performance optimization of nanometer-thin indium-tin oxide transistors by two-step air annealing

In this study, the influence of air annealing on nanometer-thin indium tin oxide (ITO) transistors was investigated. Compared with unannealed devices, the field-effect mobility and subthreshold swing of ultrathin ITO transistors with pre-annealing, post-annealing, and two-step annealing were greatly improved. Under a pre-annealing temperature at 200 °C and post-annealing temperature at 100 °C, the ultra-thin ITO transistors showed field-effect mobility of 34.2 cm2/Vs, steep subthreshold swing of 1.95 V/decade, and high Ion/Ioff ratio of 2.46 × 107. X-ray photoelectron spectroscopy revealed that the performance changes could be ascribed to the changes in the oxygen vacancies in the ITO channel under different annealing conditions. The dependence of subthreshold swing on the annealing process may be related to the absorption and release of water molecules from the ultrathin ITO surface. Overall, these results emphasize the importance of the annealing procedures for nanometer-thin ITO transistors.

Solution-Processed 2D Transition Metal Dichalcogenides: Materials to CMOS Electronics

ConspectusTwo-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) have demonstrated exceptional potential as materials for future complementary metal-oxide-semiconductor (CMOS) technology. This is primarily because of their atomic thickness and excellent electrical and mechanical properties. With advancements in fabrication technology, electronic devices based on 2D TMD materials have rapidly progressed from isolated units for scientific experimentation to integrated circuits with practical applications. Among the different production methods, the solution-processing of 2D TMD nanomaterial dispersions offers the distinct advantages of low-temperature processing and cost-effective manufacturing for large-scale flexible and wearable electronics. A wide range of 2D nanoflake inks with versatile electronic properties can be assembled into atomic-thick thin films with dangling-bond-free van der Waals interfaces between adjacent nanoflakes. Furthermore, direct printing techniques can easily integrate multifunctional devices, such as n-type and p-type transistors, into CMOS devices and more complex integrated circuits. Despite these benefits and previous accomplishments, the field of solution-processed CMOS electronics using 2D TMD semiconducting materials is in its early stages of development and requires further research. One of the current challenges is the production of scalable and high-purity 2D semiconductor mono- and few layers with large lateral sizes and narrow thickness distribution. The field-effect mobility of solution-processed 2D TMD transistors remains lower than that of the transistors manufactured using mechanical exfoliation and chemical vapor deposition methods. In particular, limited research has been conducted on solution-processed p-type 2D TMD transistors. As a result, solution-processed CMOS devices using n-type and p-type 2D TMD transistors are scarce. In this Account, we provide an overview of the recent progress in the field of solution-processed CMOS electronics employing 2D TMD materials. First, we introduce the basic liquid exfoliation methods, such as sonication-assisted exfoliation and molecular intercalation methods, that are commonly utilized to prepare 2D TMD dispersions. In addition, we discuss the production of monolayer 2D materials, which serve as the building blocks for fabricating atomic-thick thin films. Subsequently, we review the typical techniques for depositing 2D inks, including spin coating, drop casting, and inkjet printing. Furthermore, we outline the thin-film patterning process for each technique, which is crucial for integrating multifunctional materials in CMOS devices. Subsequently, we focus on the recent advancements in solution-processed 2D TMD transistors. Furthermore, we explore the various factors that can improve the performance of the devices with regard to charge transport and charge traps. Afterward, we highlight notable applications of solution-processed CMOS technology, such as logic circuits and ring oscillators. Finally, we provide an overview of the challenges and opportunities in the development of solution-processed 2D materials and the integration of multifunctional devices for the advancement of CMOS electronics. This Account aims to provide a comprehensive guide for readers, offering both a broad overview and an in-depth insight into solution-processed 2D material-based electronics, covering a wide range of topics from the preparation of 2D TMD ink to device fabrication and CMOS applications. Therefore, this Account is expected to drive further progress and advancements in this field and promote the realization of practical applications.

Aligned Indium Oxide Nanofiber to Achieve High Mobility and High Stability Field-Effect Transistor

Indium oxide (In <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> O <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{3}}\text{)}$</tex-math> </inline-formula> is a metal–oxide–semiconductor material with excellent performance. Due to its very large carrier mobility, it is considered a suitable choice for the fabrication of field-effect transistors (FETs). In this report, aligned nanofibers were prepared by electrospinning process, and the performance of In <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> O <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{3}}$</tex-math> </inline-formula> nanofiber FET was adjusted by controlling the electrospinning time. The results show that the FET based on aligned In <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> O <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{3}}$</tex-math> </inline-formula> nanofibers exhibits excellent electrical properties at an electrospinning time of 2 min, including the mobility ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula> FE) of 11.52 cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\text{2}}$</tex-math> </inline-formula> /Vs, switching current ratio ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit{I}_{\text{on}}$</tex-math> </inline-formula> / <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit{I}_{\text{off}}\text{)}$</tex-math> </inline-formula> of 2.5 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times$</tex-math> </inline-formula> 10 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^7$</tex-math> </inline-formula> , and subthreshold swing (SS) of 0.36 V/dec, and it shows good stability under positive bias stress (PBS). This method of preparing aligned metal–oxide nanofibers by electrospinning to achieve FET with high performance, low power consumption, and high stability is very suitable.