Improving electron mobility in MoS2 field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

Zhaofang Cheng, Xudong Zhang + Show 6 more

https://doi.org/10.1039/d3tc04605b

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Publication Date: Jan 1, 2024

Abstract

A structural phase incorporation strategy was proposed to improve the electron mobility of MoS2 FETs up to 237 cm2 V−1 s−1.

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