MnO3 Films Research Articles

Twisted Integration of Complex Oxide Magnetoelectric Heterostructures via Water-Etching and Transfer Process

HighlightsThe (001)-oriented ferromagnetic La0.67Sr0.33MnO3 films are stuck onto the (011)-oriented ferroelectric single-crystal 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 substrate with 0° and 45° twist angle.By applying a 7.2 kV cm−1 electric field, the coexistence of uniaxial and fourfold in-plane magnetic anisotropy is observed in 45° Sample, while a typical uniaxial anisotropy is found in 0° Sample.Manipulating strain mode and degree that can be applied to epitaxial complex oxide thin films have been a cornerstone of strain engineering. In recent years, lift-off and transfer technology of the epitaxial oxide thin films have been developed that enabled the integration of heterostructures without the limitation of material types and crystal orientations. Moreover, twisted integration would provide a more interesting strategy in artificial magnetoelectric heterostructures. A specific twist angle between the ferroelectric and ferromagnetic oxide layers corresponds to the distinct strain regulation modes in the magnetoelectric coupling process, which could provide some insight in to the physical phenomena. In this work, the La0.67Sr0.33MnO3 (001)/0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (011) (LSMO/PMN-PT) heterostructures with 45º and 0º twist angles were assembled via water-etching and transfer process. The transferred LSMO films exhibit a fourfold magnetic anisotropy with easy axis along LSMO < 110 >. A coexistence of uniaxial and fourfold magnetic anisotropy with LSMO [110] easy axis is observed for the 45° Sample by applying a 7.2 kV cm−1 electrical field, significantly different from a uniaxial anisotropy with LSMO [100] easy axis for the 0° Sample. The fitting of the ferromagnetic resonance field reveals that the strain coupling generated by the 45° twist angle causes different lattice distortion of LSMO, thereby enhancing both the fourfold and uniaxial anisotropy. This work confirms the twisting degrees of freedom for magnetoelectric coupling and opens opportunities for fabricating artificial magnetoelectric heterostructures.

Electronic properties of MnO(110) film grown on Cu (111)

In this study, we investigated MnO thin films grown on Cu(111) using a soft x-ray and UV based spectroscopy, low energy electron diffraction (LEED), scanning tunneling (STM) and scanning transmission electron microscopy (STEM). MnO thin film assumes (110) preferential plane orientation organized in different spatial domains to better adapt to Cu(111) surface and an in-plane/out-of-plane lattice parameter variation up to 11% with respect to bulk counterpart originating a sizeable XLD signal at Mn L2,3 edges. The formation of oxidized Cu region during the MnO thin film growth is not avoidable due to the copper reactivity to oxygen and at the interface the coexistence of MnO islands alternated with Cu2O regions was observed by STM. Mn 2p and Mn 3s core level photoemission line shapes present a slight change in multiplet peak relative intensity with respect bulk MnO counterpart due to the role of Cu substrate in the core level relaxation process. The photon energy dependent photoemission spectra of valence band discriminate the MnO states and indicate a weak influence of the substrate once the film thickness is reduced to 1 nm. These findings open new route in the tuning oxide thin film properties.

Fe doped γ-MnO2 of anode for lead release inhibition in zinc electrowinning

Lead (Pb) anode has caused serious environmental pollution and resource waste problems in zinc (Zn) electrowinning. A novel functional Pb-based (Pb/MnO2) anode had been prepared successfully to reduce hazardous wastes of Pb-containing anode slime in our earlier published research. However, the impurity Fe2+ detected in the industrial preparation of this Pb/MnO2 anode was a tricky problem that cannot be ignored. Here, a Fe2+ doped MnO2 (Pb/Fe-MnO2) anode with its controllable preparation was studied. The results showed that Fe2+ participated in the transformation equilibrium reaction between Mn2+ and γ-MnO2, which reduced the deposition efficiency and crystal size of γ-MnO2. The internal structure of γ-MnO2 film had been reconstructed by Fe2+, which increased the concentration of oxygen vacancy (1.6 times) and Mn3+ (5.5 times) on the surface of the composite anode. During 20 d of continuous Zn electrowinning, the anode slime accumulation of the Pb/Fe-MnO2 anode was reduced by 90 % and 40 %, respectively, compared with the traditional Pb anode and Pb/MnO2 anode. The impurity Fe2+ is generally thought to be harmful, but studies have shown that it can promote the OER of the anode surface and improve the reduction of Pb-containing anode slime. The mechanism of reconstruction engineering has revealed that two pathways of Fe2+ may affect the deposition efficiency of MnO2: electrochemical and chemical, while Fe could be involved in the film structure along with γ-MnO2 co-deposition. The controlled impurity Fe2+ effect of MnO2 film anode will have a future application prospect for Pb release inhibition in industrial Zn electrowinning and related hydrometallurgy industries.

Characterization, electrical and optical properties of PVA/MnO2 nanocomposite materials

In this research, various concentrations of manganese dioxide (MnO2) is composed by polyvinyl alcohol (PVA) to forming PVA /MnO2 films. The XRD and SEM are respectively demonstrated the structure and morphological characteristics of the films. The XRD results show that the PVA/MnO2 films is fabricated successfully. The SEM results demonstrate that MnO2 is dispersed evenly along the PVA polymeric chains. The conductivity, impedance and energy density were measured via an LCR bridge with frequency 102 to 106 Hz. There is an increase in dielectric from 64 for PVA to 95 for PVA/0.06MnO2 at 105 Hz, and also the conductivity increases from 3.61x10-3 S/cm for PVA to 5.33x10-3 S/cm for PVA/0.06MnO2. The optical characteristics of PVA and PVA/MnO2 films were recorded by UV/Vis spectroscopy. The band gap reduced from 5.01 eV for PVA to 4.85, 4.71, 4.59 eV respectively for PVA/0.02MnO2, PVA/0.04MnO2, and PVA/0.06MnO2. And the Urbach tail is modified from 1.72 eV for PVA to 3.12, 3.453, and 3.66 eV respectively. The results of the present work open the possibility for applied in different devices as energy storage systems and optoelectronics.

High temperature coefficient of resistivity (TCR) of Nd0.67Sr0.33MnO3 films by optimizing sintering temperature

In this study, Nd0.67Sr0.33MnO3 (NSMO) films are deposited on La0.3Sr0.7Al0.65Ta0.35O3 (LSAT) substrates using sol–gel spin coating method and sintered at different temperatures (Ts = 1250, 1300, 1350, 1400 and 1450 °C). Consolidated analysis of their crystal structure, surface morphology and valence states enables one to conclude that increased Ts facilitates grain growth and enhances crystallinity of films. Moreover, enhancing Ts from 1250 to 1350 °C leads to a decrease in Mn-O bond length (d(Mn-O)) and an increase in Mn-O-Mn bond angle (θ(Mn-O-Mn)). In the XPS analysis, the Mn4+ and O2– content kept increasing with the rise of Ts. When Mn4+ concentration ≤ 33%, the double exchange (DE) interactions was undoubtedly facilitated, which was beneficial for the electrical properties of the NSMO films. These changes eventually result in large temperature coefficient of resistivity (TCR). According to these results, Nd0.67Sr0.33MnO3 film, with a maximum TCR value of 21.85% K−1 at Ts = 1350 °C, are promising materials for the manufacturing of sensitivity switches and infrared bolometers.

Optimization of the electrical transport properties of La0.7Ca0.3MnO3 films by sintering temperature adjustment

With the development of the radiation thermometers, perovskite manganites have been fallen into the focus of highly sensitive infrared bolometers due to its metal-insulator transition properties. In this study, La0.7Ca0.3MnO3 (LCMO) films were prepared on (l00) LaAlO3 substrates using sol-gel spin-coating technology by adjusting different sintering temperatures (Ts, 1000 °C ≤ Ts ≤ 1400 °C). The analysis of the microstructure, surface morphology, ion valence state, and electrical transport properties revealed that the crystalline quality enhanced and the concentration of Mn4+ increased with the increasing of sintering temperature, promoting the DE effect and improving the electrical properties of the LCMO films. At Ts = 1200 °C, the temperature coefficient of resistivity (TCR) value of the LCMO film reached the maximum value (22.95% K−1) and corresponding peak TCR temperature of 246.85 K indicating that the LCMO film has great potential in infrared bolometers.

Nebulizer-assisted spray deposited Mn3O4 films: Study the substrate temperature influenced electrochromic properties cycled in neutral aqueous electrolyte system

In this work, we report the impact of substrate temperature effect on the electrochromic characteristics of trimanganese tetraoxide (Mn3O4) films prepared by nebulizer-assisted simple spray pyrolysis technique. The deposited films are in tetragonal Mn3O4 crystal-phase as realized by XRD study. The A1g, T2g and Eg Raman active modes of spinel-Mn3O4 phase are observed well in micro-Raman study. The electronic states and surface topology of the deposited Mn3O4 films were examined by XPS and FE-SEM analyses. From the optical study, the blue shift in transmittance edges and the systematic improvement of optical band gap are visualized when increasing the substrate temperature. The electrochromic performance of deposited samples was examined in 0.5 M Na2SO4 neutral aqueous system at room temperature. This neutral electrolyte offers lesser H+ and OH− concentrations and low corrosion effect, which make the window potential range wider. The optical blue-shift was observed in maximum peak positions of electrochromic parameters. The obtained result revealed that the amorphous films have superior electrochromic behavior than the crystalline one. The sample prepared at 350°C substrate temperature reaches a maximum absorbance modulation efficiency (AMEm (CEm)) of 9.626 cm2/C (at 431.61 nm), whereas, after the 100th cycle, the AMEm value increases from 9.626 to 11.154 cm2/C.

Energy storage in epitaxial multilayered BiFeO3/Na0.5Bi0.5TiO3/La0.7Sr0.3MnO3 thin films

Lead-free dielectric film capacitors with fast charge-discharge rates are ideal for pulsed power capacitors, but their energy storage density lags behind. Lead-free epitaxial multilayered BiFeO3 (BFO)/Na0.5Bi0.5TiO3 (NBT)/La0.7Sr0.3MnO3 (LSMO) films were designed and fabricated by solution processing and the effects of bottom electrodes as well as BFO thickness on microstructures, electrical properties and energy storage performances were investigated. Compared with the NBT film on Pt/Ti/SiO2/Si substrate, the leakage current densities are significantly suppressed and polarizations are obviously improved for the multilayered BFO/NBT/LSMO films. The BFO/NBT/LSMO film with BFO thickness of about 60 nm exhibits a recoverable energy storage density of 37.0 J/cm3 under 2680 kV/cm and excellent performance stability. These results demonstrate that the epitaxial multilayered BFO/NBT/LSMO films are promising candidates for high-power energy storage applications.

Polarization current effect, strain effect and ferroelectric field effect on electrical transport properties of Eu0.7Sr0.3MnO3/PMN-PT multiferroic heterostructure

Abstract By constructing Eu0.7Sr0.3MnO3 thin films/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (001) multiferroic heterostructures, the electrical transport properties of the Eu0.7Sr0.3MnO3 thin film under electro-photo dual control is studied. At room temperature, as the in-plane reading current increases from 1 μA to 100 μA, the polarization current effect gradually weakens, while the strain effect becomes more evident. As the temperature decreases from 300 K to 240 K, the ferroelectric field effect is observed to strengthen progressively. In addition, by applying light illumination, the ferroelectric field effect observed at 240 K can be suppressed, which proves that the light field can obviously control the tunable mechanism of electric field. Our results demonstrate that the temperature and light field play an important role in the switching between the electric field induced multiple tunable effects, such as polarization current effect, lattice strain effect and ferroelectric field effect. Meanwhile, the sensitivity of the Eu0.7Sr0.3MnO3 film to lattice strain enhances its application in tunable electronics.

Optimized electrical transport properties of La0.7Ca0.18Sr0.12MnO3 film by adjusting sintering temperature

Perovskite manganites Lax(Ca1-ySry)1-xMnO3 have conspicuous electrical transport properties used for the application of uncooled bolometers. Thus, considerable attention has paid to the researches on electrical transport properties of Lax(Ca1-ySry)1-xMnO3. Temperature coefficient of resistivity (TCR) and the corresponding peak temperature (Tk) are crucial parameters for uncooled bolometers. Optimal La0.7Ca0.18Sr0.12MnO3 (LCSMO) films with highly oriented growth were prepared on (00l) LaAlO3 substrate at different sintering temperature (Ts) using a facile sol-gel spin coating method. Based on the analysis of microstructure, ionic valence, surface morphology and electrical transport properties, LCSMO films exhibit high crystallinity and large room-temperature TCR at higher Ts. Theoretical Curie temperature and the coupling of the electron lattice weaken gradually with the increase in Ts, which is the dominant factor for the optimization of electrical transport properties. Additionally, the results suggest that the active energy and theoretical Curie temperature play a crucial role in adjusting TCR and Tk. With the increase in Ts, the former increases while the latter decreased, resulting in a high TCR value (12.10%/K) at room temperature (297.38 K). The peak TCR value of LCSMO sintered at 1673 K is about 25% higher than that of the film sintered at 1473 K. The resulting LCSMO films demonstrate great potential for application in uncooled bolometers. Further theoretical basis on the effects of Ts on electrical transport properties was provided.

MnO2 film promoted plasma-catalytic oxidation of HCHO and the identified active species on tubular ionizer

Tubular ionizers are dielectric barrier discharge devices widely employed for indoor air purification. Nonetheless, their practical application is limited by low efficiency and high concentrations of harmful by-products, such as ozone. To address these challenges, we have developed a new approach to integrate tubular ionizers with catalysts by uniformly spraying MnO2 catalysts onto the tubular medium. This synergistic coupling of plasma and catalysis significantly enhances the catalytic performance, leading to near twofold increase in the conversion of HCHO, while reducing ozone concentrations to two-thirds of those in the plasma-only system. We have also developed a fluorescence probe to detect the presence of free radicals such as HO• and O2−•. Our results demonstrate that the catalyst loading generates more hydroxyl and superoxide radicals, leading to superior catalytic performance.

The colossal magnetoresistance in wide temperature region of Pr0.7Sr0.3MnO3 film on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 substrate

The magnetotransport and colossal magnetoresistance (MR) in wide temperature region of Pr0.7Sr0.3MnO3 film grown on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMNPT) substrate have been studied in detail. The X-ray diffraction (XRD) measurement shows that the Pr0.7Sr0.3MnO3/PMNPT film reveal the out-of-plane single orientation and the atomic force microscopy (AFM) measurement indicates that the surface of the sample is very smooth. Moreover, some obvious interference peaks of the film and the full width at half maximum (FWHM) of 0.28° for (002) diffraction peak are observed in the XRD pattern. These phenomena suggest the high quality of the thin film. The magnetotransport and the MR effects associated to both the double exchange (DE) interaction and the spin polarized tunneling have been investigated using the temperature dependence of resistivity (ρ-T), the temperature dependence of MR (MR-T) and the magnetic filed dependence of resistivity (ρ-H). The ρ is increased gradually with decreasing the temperature, but a metal-insulator (MI) transition appears in the ρ-T curves. The MI temperature (TMI) is increased with increasing the applied field. The MR values (MR = [ρ-ρ0/ρ0]×100%) reach 25.2%, 47.8%, 69.4% and 77.8% at the applied fields of 1 , 2 , 4 and 6 T, respectively. At around TMI, the ρ changes significantly with the applied field. This indicates a colossal MR at around TMI, which can be explained by the DE mechanism. Compared with other works on Pr0.7Sr0.3MnO3, the Pr0.7Sr0.3MnO3 film on PMNPT exhibits the colossal MR in wide temperature region. Remarkably, there is two types of MR mechanisms in this work, i.e., the MR effect at around TMI caused by the DE interaction and the MR effect at low temperature (below TMI) resulted from the spin polarized tunneling, which lead to the wide temperature region of the MR.

Molarity Influenced Interesting Electrochromic Optical Modulation Peak Shift in Nebulized Spray Deposited Mn3O4 Films

Herein, we report the investigations on the electrochromic properties of nebulized-spray deposited Mn3O4 thin films in Na2SO4 aqueous solution as a function of molar concentration, for the first time. Phase analysis reveals that the films possess a tetragonal structure. From the Raman study, strong Mn2+ breathing vibration (in Mn–O) occurred in tetrahedral sites (of spinel Mn3O4). At 0.02 M, the film surface is covered with very-tiny particles with 84% highest optical transparency average. Both transmittance and absorbance related properties of electrochromic states are consider here, while introducing the notions of transmittance modulation (ΔT), absorbance modulation (ΔA), transmittance modulation efficiency (TME) and absorbance modulation efficiency (AME (or) coloration efficiency). When the concentration increases, the red shift was occurred at highest peaks of ΔT, ΔA, TME and AME with respect to the decrease in optical band gap. The maximum AME and TME of 25.064 cm2 C−1 (at 369.1 nm) and 17.542 cm2 C−1 (at 438.6 nm) were obtained for prepared samples. After the 100th cycle, the average AME (and TME) values in the UV and visible regions are decreases from 18.910 to 2.783 cm2 C−1 (2.884 to 1.060 cm2 C−1) and from 11.089 to 4.772 cm2 C−1 (11.346 to 4.684 cm2 C−1), respectively, indicating that the film is electrochromically active in the visible region even after the 100th cycle.

Co-optimization of Ag and K doping to regulate room-temperature coefficient of resistivity of La0.7Ag0.3-xKxMnO3 films

In this study, La0.7Ag0.3-xKxMnO3 (LAKMO, x = 0.15, 0.16, 0.17, 0.18, and 0.19) films with excellent electrical properties and low surface roughness were prepared on SrTiO3 (001) substrates using the spin-coating method. The crystal structures and ion valence states of the LAKMO films were modified by adjusting the doping amounts of Ag and K. The Jahn–Teller effect and electron–lattice coupling were enhanced with the MnO6 octahedron undergoes distortion. Moreover, the double-exchange interaction was improved with an increase in the number of Mn4+/Mn3+ ion pairs. Under the influence of these factors, the electrical transport properties especially the temperature coefficient of resistivity (TCR) of the LAKMO films can be refined modulated or optimized via A-site Ag and K co-doping. When x = 0.17, the maximum TCR of LAKMO reached 11.23 % K−1 at 293.23 K. Thus, La0.7Ag0.13K0.17MnO3 film with a large TCR exhibited excellent thermal properties at room temperature and was considered material for application to uncooled infrared bolometers.

The magnetocaloric and magnetic properties of Pr0.7Sr0.3MnO3 film on Pb(Mg1/3Nb2/3)0.7Ti0.3O3

The magnetocaloric and magnetic properties of Pr0.7Sr0.3MnO3 film on Pb(Mg1/3Nb2/3)0.7Ti0.3O3

Electrolyte Gated Synaptic Transistor based on an Ultra‐Thin Film of La0.7Sr0.3MnO3

AbstractDeveloping electronic devices capable of reproducing synaptic functionality is essential in the context of implementing fast, low‐energy consumption neuromorphic computing systems. Hybrid ionic/electronic three‐terminal synaptic transistors are promising as efficient artificial synapses since they can process information and learn simultaneously. In this work, an electrolyte‐gated synaptic transistor is reported based on an ultra‐thin epitaxial La0.7Sr0.3MnO3 (LSMO) film, a half‐metallic system close to a metal‐insulator transition. The dynamic control of oxygen composition of the manganite ultra‐thin film with voltage pulses applied through the gate terminal allows reversible modulation of its electronic properties in a non‐volatile manner. The conductance modulation can be finely tuned with the amplitude, duration, and number of gating pulses, providing different alternatives to gradually update the synaptic weights. The transistor implements essential synaptic features such as excitatory postsynaptic potential, paired‐pulse facilitation, long‐term potentiation/depression of synaptic weights, and spike‐time‐dependent plasticity. These results constitute an important step toward the development of neuromorphic computing devices leveraging the tunable electronic properties of correlated oxides, and pave the way toward enhancing future device functionalities by exploiting the magnetic (spin) degree of freedom of the half metallic transistor channel.

Comparative study of La0.7Ca0.18Sr0.12MnO3 films with room-temperature TCR grown on SrTiO3, La0.3Sr0.7Al0.65Ta0.35O3 and LaAlO3 substrates

Perovskite La-based manganites have distinctive electrical transport properties; thus, them has become a research focus because of its advanced application in room-temperature infrared bolometers. To assess the influences of different substrates on the crystallinity, surface morphology and electrical transport properties, La0.7Ca0.18Sr0.12MnO3 (LCSMO) films were grown on the (00l) SrTiO3 (STO), La0.3Sr0.7Al0.65Ta0.35O3 (LSAT) and LaAlO3 (LAO) substrates through sol–gel spin coating method. As determined by crystallinity, morphology and electrical transport properties, LCSMO/STO film with largest temperature coefficient of resistivity (TCR) were obtained compared with LCSMO/LSAT and LCSMO/LAO films. The LCSMO film grown on STO exhibited a maximum TCRmax of 9.40%/K (299.05 K), which is about 19% higher than that of the film prepared on LAO. In the LCSMO film, the electron-lattice couplings were optimized effectively owing to the low lattice mismatch between LCSMO/STO, thereby TCRmax of the film can be significantly enhanced. The results suggest that the LCSMO film grown on STO substrate possesses remarkable potential for advanced uncooled infrared bolometers.

Impact of La3+ doping on temperature coefficient of resistivity and peak temperature of La x Ca0.89-xSr0.11MnO3 films prepared by sol-gel spin coating method

Herein, refined LaxCa0.89-xSr0.11MnO3 (LCSMO, x = 0.65, 0.68, 0.71 and 0.74) films were prepared through the sol-gel spin-coating. The influence of La3+ content on the structural properties of LCSMO films was investigated by X-ray diffraction and Atomic force microscope, demonstrating that LCSMO films can grow well on SrTiO3 (00l) substrate. Besides, X-ray photoemission spectroscopy verified the double exchange (DE) effect was weakened with La3+ dopant. The La3+ doping and interconnected grains boundaries (GBs) led to the weakening DE effect and GBs scattering, respectively. Due to superior GBs connectivity, the resistivity of LCSMO films was less than 7.1 × 10−4 Ω·cm at low temperature of 100 K. Importantly, it is an effective control method to keep the temperature (Tk) corresponding to temperature coefficient of resistivity (TCR) at room temperature with Sr2+ content as constant in LCSMO films. At x = 0.71, the peak TCR value was found to be 8.84%/K and corresponding Tk was 283.15 K. These results are beneficial for advanced application of uncooling infrared bolometer.

Electrodeposition of manganese dioxide coatings onto graphene foam substrates for electrochemical capacitors

Optimisation of electrodeposition routes of birnessite manganese dioxide (MnO2) coatings onto 3D graphene foam substrates enabled greater attainable capacitances. Current pulse deposition method resulted in highest achievable areal capacitance of 530 mF/cm2 under a 10 mA/cm2 current rate, cycling performance with 91% retention after 9000 cycles, as well as improved rate capability when compared to the cyclic voltammetry or galvanostatic deposition. Introduction of oxygen functional groups to the graphene foam added initial pseudocapacitance and accelerated the rate for nucleation and growth of the MnO2 crystal grains, resulting in an areal capacitance of 410 mF/cm2 under a 10 mA/cm2 current rate. However, in this case the increase in specific capacitance was accompanied by sluggish kinetics for charge storage seen via impedance spectroscopy. The charge storage mechanism of the deposited MnO2 films was investigated using in situ Raman microscopy and analysis of peak shifts revealed expansion and contraction of birnessite MnO2, relating to exchange of Na+ and H2O at the MnO2 interface.

Interfacial quantum interference effect and dual magnetoresistance in La0.7Sr0.3MnO3 thin films grown on (001) Si

Transmission electron microscope image and electronic transport of La0.7Sr0.3MnO3 (LSMO) films grown on (001) oriented Si using the sputtered pulsed plasma method confirmed the presence of around 8 nm thick, less dense, and highly resistive LSMO at the interface below the conducting phase. Thicker LSMO films, in addition to metal-insulator transition, show an anomaly around the Curie temperature in temperature-dependent resistivity and magnetoresistance (MR), which is a unique observation. The conduction in these LSMO films at temperatures below low-temperature resistivity minimum is dominated by Kondo-like scattering over electron–electron scattering, established using the phenomenological model. At 20 K, the maximum positive MR is ∼ 12% for the in-plane field, while it is ∼ 7.2% for the out-of-plane field. The maximum negative in-plane MR is found to be ∼ 42.5%, which becomes ∼ 30% when the orientation of the field changes to the out-of-plane direction. The two-dimensional field-dependent change in the magneto-conductance model evidenced the quantum interference effect (QIE). The existence of QIE is associated with magnetic scattering and scattering due to spin–orbit coupling. These results may be used to modulate the electrical properties of future electronic devices and can encourage scientists to explore the multi-functionalities of complex oxides grown on bare Si substrates.