Mn Doping Concentration Research Articles

The effect of Mn doping on the electrical and magnetic properties of Cr2Te3 thin films

Mn doped Cr2-xMnxTe3 thin films were prepared by molecular beam epitaxy technology. The effect of Mn doping concentration on the structural, morphological, electrical and magnetic performance of Cr2Te3 thin films were detailed analyzed. By varying the beam current of the Mn source, it is found that Mn can be doped into the Cr2Te3 thin film when the Mn source temperature is lower than 700 ℃, while the Mn tends to bind with Te as MnTe crystal for Mn source temperature higher than 700 ℃. Cr2-xMnxTe3 films all exhibt strong ferromagnetism with a Curie temperature of around 175 K. The magnetization of the films decreases with increasing Mn doping concentration. A notable negative magnetoresistance effect is observed with the highest MR ratio about −60 % in the vicinity of the Curie temperature. A clear topological Hall signal was observed in the sample with a Mn source temperature of 700 ℃ at low temperature (2 K). These results imply that the electrical and magnetic properties of Cr2Te3 materials can be effectively controlled by doping to meet the practical needs of different fields.

Rhombohedral R3 Phase of Mn-Doped Hf0.5Zr0.5O2 Epitaxial Films with Robust Ferroelectricity.

HfO2-based ferroelectric materials are emerging as key components for next-generation nanoscale devices, owing to their exceptional nanoscale properties and compatibility with established silicon-based electronics infrastructure. Despite the considerable attention garnered by the ferroelectric orthorhombic phase, the polar rhombohedral phase has remained relatively unexplored due to the inherent challenges in its stabilization. In this study, the successful synthesis of a distinct ferroelectric rhombohedral phase is reported, i.e., the R3 phase, in Mn-doped Hf0.5Zr0.5O2 (HZM) epitaxial thin films, which stands different from the conventional Pca21 and R3m polar phases. These findings reveal that this R3 phase HZM film exhibits a remnant polarization of up to 47 µC cm- 2 at room temperature, along with an exceptional retention capability projected to exceed a decade and an endurance surpassing 109 cycles. Moreover, it is demonstrated that by modulating the concentration of Mn dopant and the film's thickness, it is possible to selectively control the phase transition between the R3, R3m, and Pca21 polar phases. This research not only sheds new light on the ferroelectricity of the HfO2 system but also paves the way for innovative strategies to manipulate ferroelectric properties for enhanced device performance.

TB-mBJ for doping concentration effects on magneto-optical properties in [formula omitted] spintronics materials

An investigation for electronic, magnetic, and optical properties of Mn-doped ZnSnAs2 compound performed using advanced computational methods. Using spin-polarized density functional theory (DFT) calculations with local orbital linearized augmented plane wave (lo-LAPW) method and Tran–Blaha’s modified Becke–Johnson (TB-mBJ) functional, Mn-doped n-type chalcopyrite semiconductor ZnMnxSn(1−x)As2, studied within varying Mn doping concentration range 0≤x≤0.5. Doping of Mn to Sn site in pure ZnSnAs2 creates a strong spin effect, which makes it useful spintronic materials. We observed with increase the Mn concentration in ZnSnAs2, energy bandgap changes while the magnetic strength of the unit cell remains unchanged, showing stability of system’s magnetism. Optical properties of the Mn doped ZnSnAs2 compounds analysed in term of dielectric function, absorption spectra, and refractive index. Optical properties show, compound is optically low active in the Infrared (IR) region and more active in visible and ultraviolet (UV) region. The electronic and optical properties of Mn-doped ZnSnAs2, offer potential technological advancements in semiconductor device design technology and engineering.

Tailoring Auger Recombination Dynamics in CsPbI3 Perovskite Nanocrystals via Transition Metal Doping.

Auger recombination is a pivotal process for semiconductor nanocrystals (NCs), significantly affecting charge carrier generation and collection in optoelectronic devices. This process depends mainly on the NCs' electronic structures. In our study, we investigated Auger recombination dynamics in manganese (Mn2+)-doped CsPbI3 NCs using transient absorption (TA) spectroscopy combined with theoretical and experimental structural characterization. Our results show that Mn2+ doping accelerates Auger recombination, reducing the biexciton lifetime from 146 to 74 ps with increasing Mn doping concentration up to 10%. This accelerated Auger recombination in Mn-doped NCs is attributed to increased band edge wave function overlap of excitons and a larger density of final states of Auger recombination due to Mn orbital involvement. Moreover, Mn doping reduces the dielectric screening of the excitons, which also contributes to the accelerated Auger recombination. Our study demonstrates the potential of element doping to regulate Auger recombination rates by modifying the materials' electronic structure.

Enhanced adsorption and visible-light photocatalytic degradation of CIP by CdS QDs‐Decorated Mn-doped NH2-UiO-66

CdS Quantum dots (QDs) interspersed on the surface of Mn-UiO-66-NH2 (hereafter abbreviated as CdS QDs@Mn-UiO-66-NH2) Z-scheme heterojunction composites were synthesized by solvothermal method for the removal of ciprofloxacin (CIP) under visible light irradiation. The influences of the doping content of Mn and the initial concentrations of CIP on the adsorption capacity and photocatalytic performance were investigated in detail. Compared to the pristine CdS and Mn-UiO-66-NH2, the fabricated CdS QDs@Mn-UiO-66-NH2 composites exhibited enhanced adsorption and photocatalytic capabilities, especially for the CMU-5 with 10 % Mn doping showing around 52.5 % adsorption removal efficiency and about 92 % photocatalytic removal efficiency for CIP (30 mg/L). Various technologies such as XPS, TG and UV–vis DRS have confirmed that the superior catalytic performance of CMU-5 is ascribed to the d-d transitions improving the utilization of visible light after the coordination of the transition metal and the presence of a heterojunction with a tight interfacial structure enhancing the charge transfer. The possible intermediates in the photodegradation process of CIP were detected using gas chromatography-mass spectrometry (GC-MS).

Effect of manganese (Mn) doping on the structural, dielectric, ferroelectric, and ferromagnetic properties of ceria (CeO2)

The Ce1-xMnxO2 ceramics were prepared using a solid-state route, with Mn doping concentrations of (x = 0.00, 0.03, 0.08, 0.13, and 0.18). Examination of X-ray diffraction patterns confirms the effective insertion of Mn into the CeO2 lattice, resulting in discernible changes in oxygen vacancy concentration and lattice expansion. X-ray photoelectron spectroscopy (XPS) analysis confirmed the presence of Ce3+, Ce4+, Mn3+, and Mn2+ oxidation states. The Photoluminescence (PL) spectra reveal the existence of oxygen vacancies, as manifested by the appearance of peaks within the energy range spanning from 3.1 eV to 2.71 eV. Raman spectra reveal a symmetric vibration around 466.81 cm-1 in all samples. The surface morphology of the samples exhibited subtle changes in grain size upon the introduction of Mn into CeO2. The dielectric behavior, investigated across a range of frequencies with varying Mn doping concentrations, exhibits an increased dielectric constant in Mn-doped CeO2, particularly with a smaller dielectric loss at lower frequencies. The ferroelectric response revealed a maximum recoverable energy density of 0.56 mJ/cm2 with an efficiency of 47.86% for CeO2. The room temperature magnetic response of the samples improved as Mn concentration increased, which is well explained by the Bound Magnetic Polarons (BMPs) and exchange interactions model. Overall, the studies show the effect of structural, electrical, and magnetic properties after doping with Mn, opening avenues for diverse applications of these ceramics.

Studies of optoelectrical properties of Mn-doped ZnO nanostructure for supercapacitor and photodetector applications

The transition metal Manganese (Mn)-doped Zinc Oxide (ZnO) nanoparticles were synthesized using the sol-gel method. The nanomaterials ZnO and Zn1-xMnxO (x=0–0.15) formation, their crystal structure, and morphological properties were confirmed by X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM) analysis of the materials. All the studied materials show hexagonal wurtzite structure with the particle size in nanometres. The optical properties of transition metal Mn-doped ZnO nanomaterials were explored by the absorption and transmission spectra. The band gap of the nanomaterials decreases with the increase of Mn doping concentration from 3.01 to 3.26 eV. The mobility and electrical conductivity of the Mn-doped ZnO thin films show a decreasing trend with the increase of Mn doping concentration in ZnO. The Mn-doped materials were investigated for supercapacitor and photodiode applications. The Zn0.90Mn0.10O nanomaterials show the maximum specific capacitance, power and energy density of ∼ 220 F/g, 2202 W/kg and 1.15 Wh/kg, respectively. The electrochemical properties confirm that the doping of ZnO opens a new window for its application in energy storage devices. The ZnO and Mn-doped ZnO were used as an electron transport layer in perovskite MAPbI3 photodiodes. Under the Illumination of blue (465 nm) light, the highest detectivity of undoped ZnO perovskite photodiode is ∼4.5×1010 Jones and doped ZnO perovskite photodiode is 0.7×1010 Jones, respectively. The low mobility of charges and unfavorable energy level alignment of Mn-doped ZnO with MAPbI3 thin films is the reason for the decrease in photo detectivity. Our studies demonstrate that the Mn-doped ZnO nanomaterials and their thin films have avenues for potential application in energy storage devices and photodiodes of perovskite MAPbI3.

Enhancing the Red Fluorescence of Carbon Dots: The Role of Mn Doping and Precursor Concentration Control

Enhancing the Red Fluorescence of Carbon Dots: The Role of Mn Doping and Precursor Concentration Control

Synthesis and characterization of Y and Mn -doped ZnO nanoparticles: Structural, optical, morphological, and gas sensing investigations

ZnO and Mn-doped Zn0.92Y0.08-xMnxO (x = 0, 0.01, 0.02, 0.04, 0.06) nanoparticles were synthesized hydrothermally and thoroughly characterized structurally, morphologically, and optically. X-ray diffraction (XRD) confirmed their crystalline wurtzite structure, with dopant concentration affecting lattice parameters, causing expansion or contraction. X-ray photoelectron spectroscopy (XPS) confirmed Mn and Y integration into the ZnO matrix. Scanning electron microscopy (SEM) showed morphological shifts from rods to flowers with increased Mn doping concentration. UV–visible absorption revealed optical band changes due to doping. Fourier transform infrared spectroscopy (FTIR) identified Zn–O, Y–O, and Mn–O bonds. Photoluminescence (PL) indicated intensity shifts with doping, suggesting dopant influence on defect-related emissions. Doped ZnO nanoparticles displayed superior hydrogen gas sensing, especially x = 0.04 at 250 °C, attributed to smaller size and structural changes.

Photogenerated carrier dynamics of Mn2+ doped CsPbBr3 assembled with TiO2 systems: Effect of Mn doping content.

In recent years, all-inorganic perovskite materials have become an ideal choice for new thin film solar cells due to their excellent photophysical properties and have become a research hotspot. Studying the ultrafast dynamics of photo-generated carriers is of great significance for further improving the performance of such devices. In this work, we focus on the transient dynamic process of CsPbBr3/TiO2 composite systems with different Mn2+ doping contents using femtosecond transient absorption spectroscopy technology. We used singular value decomposition and global fitting to analyze the transient absorption spectra and obtained three components, which are classified as hot carrier cooling, charge transfer, and charge recombination processes, respectively. We found that the doping concentration of Mn2+ has an impact on all three processes. We think that the following two factors are responsible: one is the density of defect states and the other is the bandgap width of perovskite. As the concentration of doped Mn2+ increases, the charge transfer time constant shows a trend of initially increasing, followed by a subsequent decrease, reaching a turning point. This indicates that an appropriate amount of Mn2+ doping can effectively improve the photoelectric performance of solar cell systems. We proposed a possible charge transfer mechanism model and further elucidated the microscopic mechanism of the effect of Mn2+ doping on the interface charge transfer process of the CsPbBr3/TiO2 solar cell system.

Effects of manganese doping on the lattice structure and iron ion states in La2/3Ca1/3Fe1-xMnxO3-δ

In this paper, La2/3Ca1/3Fe1-xMnxO3-δ(x = 0–0.6) nano particles have been prepared by the sol-gel method. X-ray diffraction (XRD) analysis revealed that with the increase of Mn doping content, the main diffraction peak shifted to the right, the lattice parameters decreased overall, and the degree of lattice distortion gradually reduced. X-ray photoelectron spectroscopy (XPS) analysis indicates that the valence states of Fe and Mn in the system coexist as trivalent and tetravalent, and with the increase in Mn doping, the ratio of Fe3+/Fe4+ decreases, while the ratio of Mn3+/Mn4+ slightly increases. The results of Mössbauer spectrum analysis revealed that as the Mn doping content increased, some Fe ion valence states in the system gradually changed from Fe3+ to Fe4+, and the presence of the paramagnetic phase became increasingly prominent. Furthermore, with the increase of Mn doping content, the degree of lattice distortion in the system decreased, which is consistent with the results obtained from the XRD analysis. This work will provide a reference for future research on the effects of manganese doping in similar systems.

The prospect of spray pyrolyzed pure, Mn-doped, and Zn-doped nickel oxide thin films as TCO material

Nickel Oxide films with Manganese (Mn) and Zinc (Zn) doping (NiO, Ni1-xMnxO, and Ni1-xZnxO; where x = 0, 0.02, 0.04, and 0.06) were fabricated using the spray pyrolysis technique on the glass substrates at 400 °C (673K) temperature. The XRD spectra revealed a polycrystalline nature of the films with cubic crystal structure and a favored growth orientation towards the (111) plane. The SEM micrographs revealed a smooth, homogeneous, and uniform surface, while the EDS spectra confirmed the presence of Ni, O, Zn, and Mn elements in the films. Optical analysis using UV–visible absorption spectroscopy demonstrated high transparency of the films in the visible region (400 nm–900 nm), and the transparency increased with higher Zn doping, reaching ∼85 % in Ni0.94Zn0.06O films. Conversely, Ni1-xMnxO films show a slight transmission decline with increasing Mn doping concentrations. The sheet resistance of the films was found to be decreased for low-concentration doping and again began to increase for highly doped Ni0.94Zn0.06O and Ni0.94Mn0.06O films. Among all the films, Ni0.98Zn0.02O exhibited the maximum figure of merit, showing the prospect for optoelectronic applications.

Effects of Mn doping on electronic and quantum transport in PbPdO2 thin films.

PbPdO2, a gapless semiconductor, can be transformed into a spin gapless semiconductor structure by magnetic ion doping. This unique band-gap structure serves as the foundation for its distinctive physical properties. In this study, PbPd1-xMnxO2 (x = 0.05, 0.1, 0.15) thin films with (002) preferred orientation were prepared by laser pulse deposition (PLD). The structural, electroresistive and magnetoresistive properties were systematically characterized, and the results suggest that films with different Mn doping ratios exhibit a current-induced positive colossal electroresistance (CER), and the CER values of PbPd1-xMnxO2 thin films increase with the increase of Mn doping concentration. The CER values are several fold magnitudes higher compared to those of the previously reported PbPdO2 films possessing identical (002) orientation. Combined with first-principles calculation, the underlying influence mechanism of Mn doping on CER is elucidated. In situ X-ray photoelectron spectroscopy (XPS) demonstrates a close correlation between the positive CER and the band gap change induced by oxygen vacancies in PbPd1-xMnxO2. Additionally, it is observed that Mn-doped films exhibit weak localization (WL) and weak anti-localization (WAL) quantum transport. Moreover, it is found that Mn doping can lead to a transition from WAL to WL; a small amount of Mn doping significantly enhances the weak anti-localization effect. However, with increasing Mn concentration, the WAL effect is conversely weakened. The results of studies suggest strongly that PbPdO2, one of the few oxide topological insulators, can display novel quantum transport behavior by ion doping.

Study of Effect of Calcinations Temperature on Structural and Magnetic Properties of MgMnO2-λ Nanocrystallines

The researchers are interested in studying nanoparticulates as a result of their specific Physical, Chemical and Biological traits. These nanoparticulates are additionally applicable to a wide array of industries, which includes solar cell coatings, transparent sunscreen, self-cleaning windows and scratch-resistant eyewear. Nanoparticulates have significant properties at nano scale because of high surface to volume ratio. The advanced properties of these nanoparticulates increase the interest of today’s researchers and scientist. The metal oxide nanoparticulates of MgO have enhanced properties in the field of industries, defense and medical world. Metal oxide nanoparticulates like MgO and MnO2 are currently the subject of substantial research because of their well-known antibacterial activity against several kinds of bacteria and their advanced uses in the field of storage for hydrogen gas. In the current work, pure MgO and Mn (10%) doped MgO nanoparticulates were prepared via a microwave irradiated chemical co precipitation process . The samples were further calcined at 200o , 400o , 600o and 800o Celsius for two hours constant heating. XRD, FTIR, FESEM, and VSM examinations have been conducted on the calcined materials. The XRD results revels that nanoparticulates were formed with FCC crystal structures and no phase transformation occurred with addition of Mn dopant concentration in MgO. However, the presence of Mn2+ ion in place of Mg2+ ion were recognized via broadening of peak resulted by micro strain lattice. The grain size of nanoparticulates were calculated by use of Debye Scherer estimation and crystalline size 29.47nm, 27.68nm, 36.80nm and 46.14 nm pattern shows that crystallite size increases with increase in calcinations temperature. The IR sharp peaks inspected at 409cm-1 (pure MgO/800OC), 395cm-1 (pure MgO/600oC), 402cm-1 (pure MgO/400oC) and 409cm-1 (pure MgO/200oC) respectively and for Mn doped MgO nanoparticulates sharp peaks inspected at 450 cm-1 (Mn10%/600OC),400cm1 (Mn20%/600oC) respectively and were attributed by O-Mn-O molecule vibration were confirmed the XRD analyses that is Mn2+ ion exist at Mg2+ lattice site. The electron microscopic image of sample shows that cauliflower leaf like structure was seen with size nanometer in scale. The VSM characteristic of sample concluded that saturation magnetization gradually decreases with increase of calcinations temperature and all substances were ferromagnetic in behavior. The materials have recommended property in applications as electromagnet formation.

Synthesis and investigation; influence of Mn doping on biological, optical, dielectric and electrochemical characteristics of Bi2O4 nanostructures

In this research, bismuth oxide thin films were synthesized with the variation of Mn dopant (1-5 wt %) on a glass slide by sol-gel dip coating method. XRD corroborated the creation of a monoclinic phase for all the samples after annealing at 450 °C for 4 h. The non-uniform cuboid-like granular structures were observed by SEM with a significant number of grain boundaries. Different functional groups were examined by using FTIR spectroscopy. The optical band gap was reduced from 2.01 to 1.81eV by increasing the concentration of Mn dopant. The contribution of grain and grain boundaries to the material electrical response in various frequency ranges was distinguished by impedance analysis. The polaron mechanism was used to investigate conductivity with time variation. The efficiency of supercapacitors was significantly enhanced by using the monoclinic Bi2O4 phase of bismuth oxides, promoting the specific capacitance in the range of 2518.2–6890.2 Fg-1 with high energy and power density. That leads them to the fabrication of supercapacitors in advanced electronic devices. Magnetic analysis showed that saturation magnetization and remanent frequency decreased while coercivity of thin films increased with increasing Mn concentration which was successfully explained by the critical size effect and Néel's collinear two sub-lattice models, making them plausible candidates in spintronics. As from photocatalyst analysis, the number of reactive oxygen species ROS was increased by increasing Mn doping in the Bi2O4 crystal lattice. These species degraded the water pollutants under simple exposure to sunlight (i-e visible range). The production of ROS in the photocatalytic process was also correlated with antibacterial activity. Mn-doped Bi2O4 was found to be more effective towards K. pneumonia than other bacteria. The prepared Mn:Bi2O4 nanostructures with a higher percentage of manganese were effectively used for the treatment of bloodstream infections, meningitis, pneumonia, and urinary tract infections and stopped further bacterial growth.

Study of electronic and magnetic properties of Mn-doped KNbO3: A first-principles approach

Changes in the electronic structure of Mn-doped KNbO3 have been studied by first-principles calculations, using the projector-augmented-wave method, within the generalized gradient approximation with on-site Hubbard-U potential (GGA + U), for the exchange-correlation potential. In our study, we analyze different Mn-dopant concentrations, namely 2.5, 5, and 10 %, with Mn entering Nb, K or both sites. Our results show that all doped structures acquire a ferromagnetic character. When Mn enters in Nb or K sites, the structures acquire a metallic character and when Mn enters in both Nb and K, the structures conserve a semiconductor character. The site-decomposed partial density of states shows that the metallic character comes from an up-shift in energy of O-p orbitals when Mn enters Nb sites and a down-shift energy when Mn enters K sites. Furthermore, when Mn enters in both Nb and K sites, a combination of the former cases takes place, resulting a structure with a semiconductor character. Analyzing the formal oxidation states of component atoms allows us to explain changes in electrical and magnetic properties.

Mn dopant-enabled BiFeO3 with enhanced magnetic and photoelectric properties

In this study, BiFe1−XMnXO3 (BFMXO, x = 0, 0.03, 0.05, 0.07, 0.10, and 0.15) nanoparticles were synthesized using the sol-gel technique. The XRD patterns confirm that the BFMXO nanoparticles exhibit a rhombic structure with the addition of Mn dopant, while structural distortion occurred as the doping concentration increased. In particular, Mn doping effectively induced lattice shrinkage and enhanced the lattice strain. The SEM and TEM images showed increased uniformity and grain size reduction as Mn doping concentration increased. The XPS spectra show that the conversion of Fe2+ to Fe3+ leads to the increase of oxygen vacancy concentration. Further, the M−H loops show that the saturation magnetization and residual magnetization of all Mn-doped samples were successfully improved with the gradual transformation from antiferromagnetism to ferromagnetism. Therefore, BiFe0.93Mn0.07O3 reached a maximum Ms and Mr of approximately 0.956 and 0.054 emu/g, respectively. Further, BiFe0.93Mn0.07O3 exhibited 4–5 times higher photoconductivity than the pristine sample. First-principles calculations further accounted for the improved magnetic and electrical properties of BFMXO induced by the Mn dopant. This study demonstrates an effective method for controlling the structure and characteristics of BFO-based nanomaterials for multifunctional device applications.

Photodegradation of antibacterial cefotaxime using Mn doped ZnO nanosphere

Elimination of pharmaceutical waste is essential for aquatic system preservation. In this report, the ZnO and Mn-ZnO nanospheres (MZNs) were effectively synthesized via facile co-precipitation method with different Mn doping concentrations as catalyst for photodegradation of cefotaxime. The structure features of the synthesized MZNs were successfully investigated. The obtained data were confirmed the successful fabrication of nanosphere ZnO and MZNs. The designed MZNs with various Mn concentrations were utilized in photodegradation of cefotaxime under optimum conditions. The photodegradation parameters such as antibiotic initial concentrations, catalyst dosage, and medium pH were carried out under UV irradiation. The superior photocatalytic activity was revealed when the MZNs molar ratio is 0.75 mol.%. The results show that the degradation efficiency of cefotaxime was 99% within 2 h at operating condition (initial concentration 30 mg/L, catalyst amount 0.5 g/ L and pH 9). The photodegradation mechanism of antibacterial cefotaxime drug in water is based on superoxide radicals which are considered the main reactive species. The developed MZNs exhibit high stability for removal of cefotaxime that reached to 98% after four times recycling. The MZNs demonstrated a simple and effective model for photocatalytic degradation of pharmaceutical waste.

Enhanced bipolar fatigue resistance by few oxygen vacancies of PZN-PNN-PZT ceramics near MPB

The bipolar fatigue behavior for Mn-doped PZN-PNN-PZT ceramics with composition near the MPB region was investigated at both 0.6 Ec and 2 Ec (where Ec is a coercive field). It was found that fatigue behavior depends on both the Mn doping content (or oxygen vacancies and the amplitude of the applied electric fields. Compared to no Mn doping ceramics, enhanced bipolar fatigue resistance was observed in 0.1 wt% Mn doping samples by nearly no variation of remnant polarization up to 106 cycles. The enhanced fatigue behavior is proposed to the weak pinning effect of few oxygen vacancies on domain walls, which hinders the microcrack propagation and stabilizes the domain structure. As Mn doping content increased, rich oxygen vacancies exist in ceramics, and the remnant polarization deteriorated due to the severe pinning effect of defect dipoles. Besides, different fatigue behaviors at 0.6 Ec and 2 Ec indicate that fatigue behavior can be controlled by the orientation of defect dipoles under repeated fatigue cycling.

Crystal structure, microstructure, energy band structure and electrical properties of MnO2 doped (K,Na,Li)(Nb,Ta)O3-(Bi,Na)TiO3 ceramics

In this article, KNNLT-BNT lead-free ceramics were prepared by the solid solution method to regulate the grain size and electrical properties by Mn-doped. The doped concentrations were 0.3, 0.4, and 0.5%. The surface structure of the ceramic was characterized, and the Mn-doped can improve the ceramic compactness. The internal structure of the ceramic was analyzed, with the increase of Mn-doped concentration, the (101) peak shifted to a lower angle, and the lattice is distorted. Finally, the electrical properties of the ceramic were characterized by the optical band gap and dielectric constant. Analysis results show that when the Mn-doped concentration is 0.5%, the electrical performance is the best, the grain size follows a normal distribution, and the band gap width is the narrotest 2.693 eV.