Studies of optoelectrical properties of Mn-doped ZnO nanostructure for supercapacitor and photodetector applications

Abstract

The transition metal Manganese (Mn)-doped Zinc Oxide (ZnO) nanoparticles were synthesized using the sol-gel method. The nanomaterials ZnO and Zn1-xMnxO (x=0–0.15) formation, their crystal structure, and morphological properties were confirmed by X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM) analysis of the materials. All the studied materials show hexagonal wurtzite structure with the particle size in nanometres. The optical properties of transition metal Mn-doped ZnO nanomaterials were explored by the absorption and transmission spectra. The band gap of the nanomaterials decreases with the increase of Mn doping concentration from 3.01 to 3.26 eV. The mobility and electrical conductivity of the Mn-doped ZnO thin films show a decreasing trend with the increase of Mn doping concentration in ZnO. The Mn-doped materials were investigated for supercapacitor and photodiode applications. The Zn0.90Mn0.10O nanomaterials show the maximum specific capacitance, power and energy density of ∼ 220 F/g, 2202 W/kg and 1.15 Wh/kg, respectively. The electrochemical properties confirm that the doping of ZnO opens a new window for its application in energy storage devices. The ZnO and Mn-doped ZnO were used as an electron transport layer in perovskite MAPbI3 photodiodes. Under the Illumination of blue (465 nm) light, the highest detectivity of undoped ZnO perovskite photodiode is ∼4.5×1010 Jones and doped ZnO perovskite photodiode is 0.7×1010 Jones, respectively. The low mobility of charges and unfavorable energy level alignment of Mn-doped ZnO with MAPbI3 thin films is the reason for the decrease in photo detectivity. Our studies demonstrate that the Mn-doped ZnO nanomaterials and their thin films have avenues for potential application in energy storage devices and photodiodes of perovskite MAPbI3.