Mm-wave Amplifiers Research Articles

Analysis and design of transformer-based CMOS ultra-wideband millimeter-wave circuits for wireless applications: a review

With a lot of millimeter-wave (mm-Wave) applications being issued, wideband circuits and systems have attracted much attention because of their strong applicability and versatility. In this paper, four transformer-based ultra-wideband mm-Wave circuits demonstrated in CMOS technologies are reviewed from theoretical analysis, implementation, to performance. First, we introduce a mm-Wave low-noise amplifier with transformer-based Gm-boosting and pole-tuning techniques. It achieves wide operating bandwidth, low noise figure, and good gain performance. Second, we review an injection-current-boosting technique which can significantly increase the locking range of mm-Wave injection-locked frequency triplers. Based on the injection-locked principle, we also discuss an ultra-wideband mm-Wave divider with the transformer-based high-order resonator. Finally, an E-band up-conversion mixer is presented; using the two-path transconductance stage and transformer-based load, it obtains good linearity and a large operating band.

Design of mm-wave amplifiers based on over & under neutralization techniques

Design of mm-wave amplifiers based on over & under neutralization techniques

Simple and robust self‐healing technique for millimetre‐wave amplifiers

A simple and robust self-healing technique for millimetre-wave (mm-wave) amplifiers is proposed. The self-healing technique can correct the operation frequency shifting of the amplifier (including its input and output impedance matching shifting) due to process, voltage, and temperature variations and modelling inaccuracy. A mm-wave amplifier with digitally controlled artificial dielectric transmission lines as fine frequency tuning components and an on-chip power detector as the frequency shifting detector has been implemented in 65 nm complementary metal–oxide–semiconductor to verify the effectiveness of the technique. The operating frequency of five amplifier chips is calibrated by running the self-healing algorithm on a field-programmable gate array development board. On average, the gain of the amplifier is improved by 2.60 dB from 13.66 to 16.26 dB and the input matching is improved by 12.78 dB from −4.89 to −17.67 dB at 56 GHz after the proposed self-healing procedure.

Differential and common mode stability analysis of differential mm-wave CMOS amplifiers with capacitive neutralization

In this paper differential mode and common mode stability analysis of differential transformer-coupled CMOS mm-wave amplifiers with capacitive neutralization is investigated. Simulation of a differ...

Differential and common mode stability analysis of differential mm-wave CMOS amplifiers with capacitive neutralization

In this paper differential mode and common mode stability analysis of differential transformer-coupled CMOS mm-wave amplifiers with capacitive neutralization is investigated. Simulation of a differential amplifier implemented with a complete PSP transistor model shows that capacitive neutralization can improve the differential stability. In common mode however, the differential pair becomes potentially unstable over a wider frequency range. A robust common mode resistive stabilization technique, which ensures complete stability of the amplifier, is also discussed and analyzed. The analysis and stabilization techniques were successfully applied to stabilize a common mode unstable integrated F-band 45 nm CMOS amplifier. Measurements confirm the stabilization of the amplifier and a differential gain of 16 dB at 110 GHz is achieved.

A free-electron amplifier in the regime of non-resonant trapping

A new version of the regime of electron trapping is proposed for electron microwave amplifiers. The use of this regime in a mm-wave amplifier with a weakly relativistic electron beam can simultaneously provide efficiency as high as 50%, a very broad (tens of percent) frequency band, and very weak sensitivity to the spread in electron velocity.

Beam confinement magnets based on single-grain Y-Ba-Cu-O

Flux-trap magnets based on high-temperature superconductors were studied for their potential as electron-beam control elements. Applications could include accelerators, klystrons, and MM-wave amplifiers. The authors have constructed compact magnets using bulk YBCO crystals that exhibit axial fields of 1.0-1.2 T at operating temperatures from 65 K to 77 K. Transverse fields and field stability have also been measured. Finally, methods and mechanisms involved in pulse-charging the superconducting rings are discussed.

Design and construction of planar mm-wave accelerating cavity structures

Feasibility studies on planar millimeter-wave cavity structures have been made. The structures could be used for linear accelerators, free-electron lasers, mm-wave amplifiers, or mm-wave undulators. The cavity structures are intended to be manufactured by using DXL (deep x-ray lithography) microfabrication technology. The frequency of operation can be about 30 GHz to 300 GHz. For most applications, a complete structure consists of two identical planar half structures put together face-to-face. Construction and properties of the constant gradient structures that have been investigated so far will be discussed. These cavity structures have been designed for 120 GHz 2π/3-mode operation.

Integrated coplanar mm-wave amplifier with gain control using a dual-gate InP HEMT

Variable gain mm-wave amplifiers, based on InP high-electron mobility transistor (HEMT) devices, are demonstrated. The two-stage circuits consist of a single-gate (SG) and dual-gate (DG) transistor. The influence of the gate recess depth on the gain control range is investigated. A maximum gain control range of 32 dB is achieved which is the largest reported in the mm-wave range for a monolithically integrated variable gain amplifier (VGA). The maximum gain is 25.7 dB at 48.5 GHz with a 3-dB bandwidth of 10.5 GHz. The circuits were fabricated in coplanar technology.