Μm Of Surface Research Articles

Small-Angle Neutron Scattering Study of High Fat Fish Oil-In-Water Emulsion Stabilized with Sodium Caseinate and Phosphatidylcholine.

We report on small-angle neutron scattering (SANS) investigations of separate phase domains in high fat (70%) oil-in-water emulsions emulsified with the combination of sodium caseinate (CAS) and phosphatidylcholine (PC). The emulsion as a whole was studied by contrast variation to identify scattering components dominated by individual emulsifiers. The emulsion was subsequently separated into the aqueous phase and the oil-rich droplet phase, which were characterized separately. Emulsions produced with 1.05% (w/w) CAS and PC fraction which varies between 1.75% (w/w) and 0.35% (w/w) provided droplets between 10 and 19 μm in surface weighted mean in 70% fish oil-in-water emulsions. At least two-third of the overall CAS is associated with the interface, while the rest remains with the aqueous phase. Six percent of PC formed a monolayer in the interface, while the rest of the PC remains in the droplet phase in the form of multilayers. When the separated components were resuspended, the resuspended emulsion showed similar characteristics compared to the original emulsion in terms of droplet size distribution and neutron scattering. Instead, CAS in the aqueous phase separated from the emulsion shows aggregation not present in the corresponding CAS-in-D2O system.

The effect of surface preparation on the production of low interfacial charge regrown interfaces

Many optical and digital device structures could be enhanced by the ability to grow highly perfect interfaces on surfaces which have been chemically processed. Growth surfaces prepared through wet chemical processing typically exhibit a large density of carrier traps at a subsequently grown buried interface. The use of a Br based in-situ vapor etch prior to growth has been developed to substantially improve the electrical behavior of these interfaces. The removal of only ~ 0.02 μm of surface through the vapor etch at 800°C is sufficient to reduce the trap density. Such an in-situ vapor does not significantly reduce the concentration of chemical contaminates at the buried interface implying a change in the electrical behavior of impurities due to the vapor etch.