Mixture Of In2O3 Research Articles

Synthesis and High-Temperature Thermodynamic Properties of InFeGe2O7 and GdFeGe2O7

Germanates InFeGe2O7 and GdFeGe2O7 have been produced in the form of polycrystalline powders from stoichiometric mixtures of In2O3 (Gd2O3), Fe2O3, and GeO2 by solid-phase synthesis. Calcination was carried out in air in the temperature range 1273–1473 K. The high-temperature heat capacities of these oxide compounds have been measured using differential scanning calorimetry. The resulting experimental Cp = f(T) data were used to calculate the thermodynamic functions (the enthalpy and entropy changes) of the investigated Fe–In and Fe–Gd germanates.

DC Magnetron Sputtered IZTO Thin Films for Organic Photovoltaic Application.

IZTO20 (In0.6Zn0.2Sn0.2O1.5) ceramic target was prepared from oxide mixture of In2O3, ZnO, and SnO2 powders. IZTO20 thin films were then deposited onto glass substrate at 400 °C by DC magnetron sputtering. The average optical transmittance determined by ultraviolet-visible spectroscopy was higher than 85% for all films. The minimum resistivity of the annealed IZTO20 thin film was approximately 6.1×10-4 Ω·cm, which tended to increase with decreasing indium content. Substrate heating and annealing were found to be important parameters affecting the electrical and optical properties. An organic photovoltaic (OPV) cell was fabricated using the IZTO20 film deposited under the optimized condition as an anode electrode and the efficiency of up to 80% compared to that of a similar OPV cell using ITO film was observed. Reduction of surface roughness and electrical resistivity through annealing treatment was found to contribute to the improved efficiency of the OPV cell.

Development of low temperature technology for the growth of wide band gap semiconductor nanowires

In2Ge2O7, Ge3N4, In2O3 and germanium nanowires were synthesized by the developed hydrazine (N2H4)-based technology. Annealing of germanium or Ge+In sources in the vapor of N2H4+3 mol.% H2O caused the formation of volatile GeO and In2O molecules in the hot zone. These molecules were transferred to the Si substrate, which was placed in the could zone of a reactor. After interacting with hydrazine decomposition products (NH3, NH2, NH, H2, H) and water, Ge3N4 nanowires and nanobelts were produced on the Ge source in the temperature range of 500–520 oC. The growth temperature of Ge3N4 nanowires in hydrazine vapor was by 350 oC lower than the temperature reported in the literature. Using In+Ge source the tapered In2O3 nanowires were formed on the Si substrate at 400 oC. At 420–440 oC the mixture of In2O3 and Ge nanowires were synthesized, while at 450 oC In2Ge2O7 nanowires were produced, with InN nanocrystals growing on their stems. The possible chemical reactions for the synthesis of these nanostructures were evaluated. The growth temperatures of both, In2Ge2O7 and InN nanostructures were by 50–150 oC lower than that, reported in the literature. The results of this work clearly demonstrate the ability of hydrazine vapor to reduce the growth temperature of nitride and oxide nanomaterials.

ChemInform Abstract: Synthesis and Crystal Structure of InFeO3(ZnO)4.

AbstractPolycrystalline InFeO3(ZnO)4 is obtained from a pelletized 1:1:8 mixture of In2O3, Fe2O3, and ZnO (Pt tubes, 1350 °C, 5 d).

Enhanced Gas Sensing Properties of Multiple Networked In2O3-Core/ZnO-Shell Nanorod Sensors

The influence of the encapsulation of In2O3 nanorods with ZnO on the H2S gas sensing properties was studied. In2O3-core/ZnO-shell nanorods were fabricated by a two step process comprising the thermal evaporation of an 1:1 mixture of In2O3 and graphite powders and the atomic layer deposition of ZnO. The core-shell nanorods ranged from 100 to 200 nm in diameter and were up to a few hundreds of micrometers in length. The thickness of the ZnO shell layer in the core-shell nanorod ranged from 5 to 10 nm. Multiple networked In2O3-core/ZnO-shell nanorod sensors showed the response of more or less 4 times higher than bare In2O3 nanorod sensors to H2S in a concentration range of 10-100 ppm at 300 degrees C. The substantial improvement in the response of In2O3 nanorods to H2S gas by the encapsulation with ZnO can be accounted for based on the space-charge model. Besides the enhanced sensor response, both the response and recovery times of the core-shell nanorods were shorter than those of the bare-In2O3 nanorods for any H2S concentration, respectively.

Morphology and Optical Measurements of Nanostructured In<sub>2</sub>O<sub>3</sub>:SnO<sub>2</sub> Nanoparticle

Ultra-fine and uniform ITO nanopowders can be prepared by very simple Combustion method. In this paper, effects of Indium oxide with Sn doping on crystallinity, band gap values by UV studies and morphological studies by SEM and TEM analysis of nanopowders are reported. Powder mixtures of In2O3:SnO2 of 90:10 compositions are prepared and calculated grain size from X-ray diffraction measurements. The free electron absorption is determined from spectral transmission and reflection measurements. Key words: In2O3:SnO2, XRD, UV, Combustion and SEM.

Polyaniline/nano-in<sub>2</sub>O<sub>3</sub> Composites Used as a Sensitive Material to NH<sub>3</sub>

In presence of nano-In2O3 which were synthesised via a reverse microemulsion, Polyaniline/nano-In2O3 composites were prepared by in-situ polymerization of aniline in 5-sulphosalicylic acid(SSA) aqueous solution. They were characterized by means of TEM, XRD and FTIR.. TEM and XRD showed that the average diameter of In2O3 particles was 15nm with a narrow size distribution and with a high degree of crystallization. The FTIR suggested that the structure of PAn-SSA was not be changed by the mixture of In2O3. Sensitivity of the composites to 100~1000ppm NH3 were studied, the results reveal that polyaniline/nano-In2O3 composites have short response time and good reversibility, the gas sensitive of composites to NH3 under 300ppm increased linearly with the increasing concentration of NH3 and decreased with the increasing of In2O3 concentration. Long-term stability of polyaniline/nano-In2O3 composites were also investagated, it can be concluded that the organic-inorganic hybrid materials have better environmental stability.

ChemInform Abstract: A New Layered Indium Selenium Oxychloride Material: Synthesis, Structure, and Characterization of InSeO3Cl.

AbstractThe new title compound is synthesized as single phase by solid state reaction of a 1:1:3 mixture of In2O3, InCl3, and SeO2 (evacuated silica tube, 500 °C, 24 h).

ChemInform Abstract: The Cystal Structure of InGaO3(ZnO)4: A Single Crystal X‐Ray and Electron Diffraction Study.

AbstractThe title compound is prepared from a mixture of In2O3, Ga2O3, and ZnO (Pt tubes, 1623 K, 6 d).

Synthesis, structure and optical properties of nano-sized doped In2O3 – 10% SnO material

A mixture of In2O3 + 10% SnO was milled under various conditions, followed by subsequent annealing at various temperatures. X-ray diffraction analysis and FTIR measurements were carried out. It is found that after milling, a single (In,Sn)2O3 phase is obtained, indicating the dissolution of Sn into In2O3 lattice and its substitution into In-ionic site.

Reduction of Indium(III) Oxide to Indium through Mechanochemical Route

Abstract A nonthermal reduction of indium(III) oxide (In2O3) to metallic indium (In) was achieved through mechanochemical route in this work. A mixture of In2O3 and lithium nitride (Li3N) under ammonia (NH3) and/or nitrogen (N2) gas environments was milled in a planetary ball mill with uni-size ZrO2 balls to induce mechanochemical reaction between the starting materials. Metallic indium was obtained after milling for 120 min, and the results are confirmed by X-ray diffraction (XRD) analysis. Washing of the milled product with water to remove by-products using the planetary ball mill for a further 10 min resulted in formation of pellets which were analyzed by EPMA, results clearly show that high purity indium metal was obtained.

Heat treatment effects on electrical and optical properties of ternary compound In2O3–ZnO films

Heat treatment effects on the electrical and optical properties are investigated for In2O3–ZnO film with a Zn content [Zn/(In+Zn)] of 33 at. %. Thin films deposited in a mixed gas atmosphere (Ar+20% O2) by a magnetron sputtering method show high resistivity of about 1.7×10−1 Ω cm. A mixture of In2O3 (99.999%) and ZnO (99.999%) powders calcined at 1000 °C in an Ar atmosphere for 2 h was used as the target. On the other hand, the films deposited in a pure Ar gas environment show low resistivity of about 3×10−4 Ω cm, comparable to that of indium tin oxide films (10−4 Ω cm). After heat treatment at 650 °C in vacuum, it was found that the films deposited in a mixed gas atmosphere revealed low resistivity similar to that of films deposited in a pure Ar gas. For these annealed films, their electrical properties are very stable when treated at temperatures up to 500 °C in air or 650 °C in vacuum. Also, it is found that the optical band gap of In2O3–ZnO films increase (or decrease) after the heat treatment in vacuum (or O2 atmosphere). These effects are mainly due to the change in carrier concentration before and after heat treatment.

Oxide Layer Formed on the Surface of Ozone-Treated InP

Oxides are formed on InP substrates under UV/ozone illumination. The thickness of the formed oxides increases as the exposure time to the UV source increases, and tends to saturate after three hours of exposure. The optical transmission and X-ray diffraction measurements predict the formation of the oxide layer. X-ray diffraction shows that the oxide film is a mixture of In2O3 and InPO4 and seems to be In2O3-rich. The integrated absorption coefficient of the formed oxide layer does not depend on the wavelengths in the range of 800–1400 nm, and is found to be in the order of 107 cm-1. The reflections from the sample surface after UV/ozone oxidation at different exposure times are also measured.

Rapid Formation and Growth of Bixbyite‐Type (In0.67Fe0.33)2O3 by 28 GHz Microwave Irradiation

(In0.67Fe0.33)2O3 with the bixbyite structure was synthesized via 28 GHz microwave irradiation, using multimode microwave heating equipment. Indium sesquioxide strongly absorbs 28 GHz microwaves, and this strong coupling with microwave energy can be used to drive a reaction with iron sesquioxide. A mixture of In2O3 and α‐Fe2O3 powders (In:Fe ratio of 2:1) was irradiated with microwaves at a frequency of 28 GHz. The mixture was heated to 1400°C during the microwave irradiation. The formation of a solid solution was completed within a minute, which indicated a drastic enhancement of the reaction rate. Scanning electron microscopy revealed remarkable grain growth under microwave irradiation.

P-type transparent conducting In2O3–Ag2O thin films prepared by reactive electron beam evaporation technique

The transparent and conducting oxide thin films are all, so far, n type. In the present article, we report the results of thin films of In2O3+Ag2O which have shown p-type conductivity and transparency in the visible range. These films are prepared on glass substrates by reactive electron beam evaporation technique at a substrate temperature of 180 °C and at a chamber pressure of 2.5×10−4 Torr with oxygen. The evaporation rate is varied by controlling the electron beam current in the range: 30–100 mA keeping the voltage at 3.8 kV. The starting material is a mixture of In2O3 and Ag2O powder (of purity 99.99%). Two compositions of Ag2O in the starting material: 20% and 40% by weight have been studied. All the films grown at higher evaporation rate are polycrystalline. The electrical and optical properties of the films show very interesting behavior. The type of conductivity (p or n) in these films is observed to be dependent upon the evaporation rate. The best values for p-type films observed in the present investigation are for the 80:20 composition at an evaporation rate 42 A/min: Hall mobility: 8.2 cm2/V s, resistivity: 22.5 Ω cm and transparency at 500 nm: 34%. The data are analyzed in the light of electronegativity equalization and partial negative charge concepts to understand the physics of the p-type conduction.

Syntheses and Crystallographic Data of the Homologous Compounds InFeO3(ZnO)m, (m = 1, 2, 3, 7, 11, 13, 15, and 19) and Fe2O3(ZnO)m (m = 8 and 9) in the In2O3-ZnFe2O4-ZnO System

Syntheses of the homologous compounds InFeO3(ZnO)m (m = integer) in the In2O3-ZnFe2O4-ZnO system at 1150-1550°C are investigated. In FeO3(ZnO)m phases (m = 1-5 and 7) are stable above 1150°C. Single crystals of InFeO3(ZnO)m (m = 1, 2, 3, 7, 11, 13, 15, and 19) are grown by means of solid state reactions in mixtures of In2O3, Fe2O3, and ZnO powders, and crystals of Fe2O3(ZnO)m (m = 8 and 9) are grown from mixtures of Fe2O3 and ZnO powders at 1500 or 1550°C. The crystal data determined by means of a Weissenberg camera are as follows: InFeO3(ZnO): a = 3.32 Å and c = 26.1 Å; InFeO3(ZnO)2: a = 3.31 Å and c = 22.6 Å; InFeO3(ZnO)3: a = 3.30 Å and c = 41.8 Å; InFeO3(ZnO)7: a = 3.27 Å and c = 73 Å; InFeO3(ZnO)11: a = 3.27 Å and c = 104 Å; InFeO3(ZnO)13: a = 3.27 Å and c = 120 Å; InFeO1(ZnO)l9: a = 3.27 Å and c = 167 Å; and Fe2O3(ZnO)9; monoclinic crystal system with a = 5.60 Å, b = 68.1 Å, c = 29.5 Å, β = 94.2°. and C2/m space group. The crystal data determined by means of a single crystal X-ray diffractometer are as follows: InFeO3(ZnO)15: a = 3.267 Å and c = 135 Å; and Fe2O3(ZnO)8: orthorhombic crystal system with a = 5.5987(4) Å b = 68.358(7) Å, c = 53.67(4) Å, and Ccmm space group. InFeO3(ZnO)m belongs to R3̄m for m = odd or P 63/mmc for m = even and their lattice constants are given in a hexagonal form. The crystal data for InFeO3(ZnO)m and Fe2O3(ZnO)m are discussed based upon a wurtzite-type crystal structure.