Hole traps have been studied by means of the minority-carrier transient spectroscopy (MCTS) technique in non-intentionally doped n-InSe single crystals grown by the Bridgman-Stockbarger method. Three main trapping levels have been detected at 0.12, 0.22 and 0.45 eV from the top of the valence band with a capture cross section of 3 × 10 −16, 8 × 10 −17, and 6 × 10 −13 cm 2, respectively. A comparison is made between the results of this work and data reported by other authors.