Minimal Empiricism Research Articles

A charge-based large-signal bipolar transistor model for device and circuit simulation

A model derived from one-dimensional regional analyses of ambipolar carrier transport with minimal empiricism is presented. Model verification and parameter extraction, based on test devices representative of the advanced bipolar technology, are described and used to demonstrate the predictive potential of the model. The physical model serves as a basis for seminumerical mixed-mode device/circuit simulation, as well as for a model hierarchy, in CAD applications. >