This study explores the room-temperature magnetodielectric (MD) and magnetoresistance (MR) properties of Nd0.5Dy0.5FeO3 thin films on n-type silicon substrates from 4 Hz to 2 MHz. The observed MD effect registers a change of ∼23 %, and the MR effect manifests a change of ∼11 % when subjected to an applied magnetic field of 2.5 T at a frequency of 177 Hz. Interestingly, the MD effect was absent at 1 T across all frequencies. However, we observed an MR of 6 % at 1 T, implying the possibility of an intrinsic MD effect or the co-existence of both intrinsic and extrinsic contributions to the MD effect. To comprehensively gauge the dielectric properties of the thin film at higher frequencies, a 5-GHz microstripline resonator was fabricated. Coupled with experimental data and simulations, this study reveals a dielectric constant of ∼56 for the Nd0.5Dy0.5FeO3 thin film at 5 GHz and 300 K.
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