This paper reports on an enhanced anodic bonding technology of thin e-beam evaporated glass layers ( d≤5 μm) for micromachined silicon sensors and actuators. This MOS-compatible technology has been developed for bonding between a silicon wafer with electrical structures and a bulk micromachined silicon wafer. A bonding frame structure can be realized with hermetically sealed metal feedtroughs especially suited for capacitive sensors with a small sensing gap and fast RC-time constants. A lift-off technology for structuring the glass using metal as a sacrificial layer has been developed, because the substrates were heated to about 300°C in order to enhance the quality of the glass layer. A simple model for the current flow during the bonding process is given. The numerically calculated current–voltage behaviour is compared with measured data. An electrostatically excitated silicon resonator is realized to demonstrate the applicability of this technology.