Microelectronic Techniques Research Articles

The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale

Experimental assessment of the strain tensor within a microstructure is challenging, especially for small mechanical deformations acting over submicron length scales. In this work, we fully characterize the spatial strain distribution within a suspended micro-disk laser made of Ge1-xSnx alloy, with fine resolution <200 nm. We employ Scanning X-ray Diffraction Microscopy, a model-free method based on synchrotron radiation, to directly obtain maps of all components of lattice strain and rotation, including the shear strains, finding them on a magnitude ~10-3. We correlate these small elastic deformations to structural defects and the relaxation of the three-dimensional microstructure, demonstrating the potential of an advanced X-ray microscopy technique for microelectronics.

Review of: "Internal Order of MEMS Technology and Nano- Microelectronics Techniques"

Review of: "Internal Order of MEMS Technology and Nano- Microelectronics Techniques"

Controlled Anisotropic Wetting by Plasma Treatment for Directed Self-Assembly of High-χ Block Copolymers.

The directed self-assembly (DSA) of block copolymers (BCPs) is a promising next-generation lithography technique for high-resolution patterning. However, achieving lithographically applicable BCP organization such as out-of-plane lamellae requires proper tuning of interfacial energies between the BCP domains and the substrate, which remains difficult to address effectively and efficiently with high-χ BCPs. Here, we present the successful generation of anisotropic wetting by plasma treatment on patterned spin-on-carbon (SOC) substrates and its application to the DSA of a high-χ Si-containing material, poly(1,1-dimethylsilacyclobutane)-block-polystyrene (PDMSB-b-PS), with a 9 nm half pitch. Exposing the SOC substrate to different plasma chemistries promotes the vertical alignment of the PDMSB-b-PS lamellae within the trenches. In particular, a patterned substrate treated with HBr/O2 plasma gives both a neutral wetting at the bottom interface and a strong PS-affine wetting at the sidewalls of the SOC trenches to efficiently guide the vertical BCP lamellae. Furthermore, prolonged exposure to HBr/O2 plasma enables an adjustment of the trench width and an increased density of BCP lines on the substrate. Experimental observations are in agreement with a free energy configurational model developed to describe the system. These advances, which could be easily implemented in industry, could contribute to the wider adoption of self-assembly techniques in microelectronics, and beyond to applications such as metasurfaces, surface-enhanced Raman spectroscopy, and sensing technologies.

Optimization strategy for epoxy cross-linked molecular glass photoresist in EUV lithography

The development of new resist materials is vital for fabrication techniques for next-generation microelectronics. A class of photosensitizer compositions with reactivity differences has been developed that can be used in epoxy cross-linked photoresist formulations for advanced microlithography techniques like extreme ultraviolet lithography (EUVL). With “PDN first, PAG second” combination strategy containing slow photolysis initiators (photoacid generator, PAG) and fast photolysis terminators (photodegradable nucleophile, PDN), photoresists produce photolithographic patterns with dense structure that are insoluble in the developer by epoxy cationic polymerization. This combination enhances chemical contrast between the exposed and non-exposed areas while eliminating the stochastic impact to get a lithographic structure with high mechanical strength. Lithographic formulations have been developed and tested in line-and-space patterning experiments using EUVL, and 18 nm half-pitch (HP) at a dose of 25.2 mJ·cm−2 with a line edge roughness (LER) of 2.8 nm was achieved by the combination strategy. This strategy offers the possibility of achieving higher resolution for photoresists based on a cationic polymerization mechanism.

Inverse-designed metasurfaces with facile fabrication parameters

Optical metasurfaces are planar nanostructured devices that are industrially attractive in part because they utilize high-throughput microelectronic fabrication techniques for implementation. It is therefore critical to develop design paradigms that can balance the realization of highly efficient wavefront responses together with device manufacturability. We introduce a gradient-based design framework for freeform metasurfaces in which nanoscale elements are explicitly constrained to feature basic shapes, nearly uniform feature sizes, and exceptionally low aspect ratios. In spite of the apparent uniformity of the metasurface geometric features, the devices are able to utilize nonlocal near-field optical coupling to achieve highly efficient and extreme wavefront scattering beyond conventional design methodologies. Utilizing this approach, we design facile high-numerical-aperture devices such as beam deflectors and large-area metalenses capable of diffraction-limited focusing. We anticipate that these concepts can facilitate the design and integration of metasurfaces into monolithic optical systems.

A Review of Development of Chemical Sensors

A comprehensive summary of the most recentre search concentrating on chemical sensors utilizing nano tubes,Nano rods,Nano belts, and nano wiresis given in this article. The experimental principle, sensor device design,sensor mechanism, and multiple significant conclusionsreceivethevastmajorityofourattention.Thefollowingfoursectionsprovide additional information on the creation of chemical sensors based on nanostructured materials: nanotube sensors, Nano rod sensors, Nano belt sensors and Nano wire sensors. Weconcludethisreviewwithpersonalperspectivesonthedirectionstowardswhichfuture research on nanostructured sensors might be directed. At ambient temperature, the nanotube sensors show a far faster response time and a significantly higher sensitivity than the current solid-state sensors. Reversibility of the sensor can be obtained by heating it to a high temperature or by slowly recovering under ambient conditions. Over the past decade, synthesized nanomaterial’s, such as carbon nanotube, nanoparticle, quantum dot, and nanowire, have already made breakthroughs in various fields, including biomedical sensors. Enormous surface area-to-volume ratio of the Nano materials increases sensitivity dramatically compared with macro-sized material. Herein we present a comprehensive review about the working principle and fabrication process of nanowire sensors. Then anotube sensor sex hibit a fast response and asubstantially higher sensitivity than thatofexistingsolid-statesensorsatroomtemperature.Sensorreversibilityisachievedbyslow recovery under ambient conditions or by heating to high temperatures.Synthesized Nano materials, including carbon nanotubes, nanoparticles, quantum dots, and nanowires, have already achieved significant advances in a number of sectors, including biological sensors, during the last ten years. When compared to macro-sized material, the nanoparticles' enormous surface area-to-volume ratio significantly boosts sensitivity. We provide a thorough overview of the fabrication process and operating principle of the nanowire sensor here. Recent advances including self-powering, reusability, sensitivity in high ionic strength solvent,andlong-term stabilityaresurveyedandhighlightedas well.Nanowire isexpectedtolead significant improvement of biomedical sensor in the near future.Advantages and disadvantages of the sensors are provided along with brief descriptions. An electrical device that monitors changes in a quantity, such as voltage, temperature, pressure, or humidity, is called a sensor. As a result, classification is done according to the attribute that a sensor measures. A temperature sensor detects even the smallest variations in its environment or shifts in temperature, such as hot or cold weather. Microelectronic manufacturing techniques have been used to manufacture chemical and electrochemical sensors.Thedevelopment ofchemical sensors has been spurred forward by the recentadvancesinmicromachingtechnology.Chemicalsensorresearchhasadvancedthanksto micro machining methods like sacrificiallayers, plasmaetching, andchemicalanisotropicetching. These methods enable the creation of low mass, low power driven devices as well as controlled working conditions and temperature. Researchersbecameinterestedinthesecarefullychoseninvitronanostructureswhentheywere combined with nanomaterials because the improved properties of these nanostructures led to advances inthe analytical performance of chemical and biosensors. Thisstudycoversthe latest advancements in recognition elements that are integrated in to chemical sensors and bio sensors used in the food, medical, and environmental domains. These elements include both traditional ones like enzymes and antibodies as well as more modern ones like aptomers and phages.Cyclic voltammetry and electron microscopy are frequently used in the characterization of chemically modified sensors and biosensors because they enable the confirmation of electrode mechanisms and surface morphologies. X-ray photoelectron spectroscopy (XPS), among other methods, is a special tool for obtaining information on the sensor surface that is qualitative, quantitative/semi-quantitative, and speciation-related. However, XPS is still not widely applied in this industry. The purpose of this work is to review a few selected studies that demonstrate how wellXPSperformswhencharacterizingthetopsurfacelayersofbiosensorsandchemically Modified sensors. The reader is provided with the necessary background information in a brief introduction to X-ray photoelectron spectroscopy. The use of XPS to characterize sensors appropriate for environmental and food analysis is highlighted.

Structural, Electrical and Optical Properties of Zn-Doped SrVO3 Thin Films Grown By Co-Sputtering

Due to its optical and electrical characteristics, SrVO3 is a strongly correlated metal that has received extensive research in recent years. This makes it a promising transparent conducting oxide (TCO) for a variety of optoelectronic applications. The most widely used TCO at the moment, indium tin oxide, suffers from resource depletion. By analyzing and improving these interesting properties, SrVO3 might be able to take its place [1]. Unfortunately, in order to obtain SrVO3 as a crystallized phase, non-compatible with microelectronic industry thin film growth techniques must be used. Moreover, they require specific substrates for achieving the crystalline state, such as SrTiO3, LaAlO3, and (LaAlO3)0,3(Sr2TaAlO6)0,7 (LSAT) [2]. Nevertheless, recent studies made by our groups have demonstrated that crystalline SrVO3 layers may be produced on less expensive substrates such as glass or silicon substrates, with the simple use of a TiO2 buffer layer. This recent finding is covered by a global patent [3].In the present work, we report experimental investigations on the reactively co-sputtering of SrVO3 and ZnO targets in a H-rich plasma, on Si substrates, with and without a TiO2 buffer layer, to grow transparent and conductive films. TiO2 buffer layer has been deposited on Si Substrate by Atomic Layer Deposition as reported elsewhere [4]. We looked at the effects of growth temperatures (TG) and the hydrogen rate rH (the ratio of H2 to Ar) on the thin films’ structural, electrical, and optical characteristics. XRD, high-resolution TEM, and AFM techniques were used to examine the films’ structural characteristics. The 4 probes approach, Van der Pauw measurements using a PPMS, and Hall effect measurements were used to examine the electrical properties. Finally, spectroscopic ellipsometry was used to conduct optical characterizations.The structural analysis showed that it is possible to favor the growth of crystalline SrVO3 layers on top of the TiO2 buffer layer by optimizing TG and rH (Figure 1a). In some specific conditions, a partially crystallized layer of SrVO3 was also directly deposited on a Si substrate without the use of such a buffer layer, which has never been reported in the literature and thus is encouraging for the future growth of such material on-low-cost substrate (Figure 1b). The Zn concentration in the film is only 0.15 at% because the radio-frequency (RF) power density applied to the ZnO target is much lower than the one applied to the SrVO3 target. The presence of dopants during the development process may favor the crystallization of SrVO3, which may help to explain this partial crystallization. This finding might pave the way for buffer-free complete crystallization of SrVO3 on Si substrates.When the films are grown on a TiO2 buffer layer, measurements of the physical properties have evidenced that it is possible to form thin films with optical transparency ranging from 70 to 75%, between 475 and 800 nm (Figure 1c). The thin films’ electrical resistivities at ambient temperature reach values of 1.2 × 10−3 Ohm.cm, according to electrical characterizations performed on them using the 4 probes method. Moreover, the PPMS data reveal a decrease in resistivity as a function of temperature (Figure 1d) which is the signature of semiconductor behavior. Such a feature has never been reported elsewhere and is probably due to an excess of oxygen in the layer induced 2 by the reactive growth approach. The vanadate films detailed in this paper present a sufficiently low resistivity to be used for microelectronics applications since the films produced with optimal values of rH and TG are more conductive than the undoped semiconductor films typically used as TCOs, such as ZnO and SnO2. In addition, these films feature an optical band gap, and therefore offer the opportunity to create materials with photoluminescence properties by doping them with rare earth ions for example. This is extremely promising for the design of light-emitting diodes or sensors.[1] L. Zhang et al, “Correlated metals as transparent conductors,” Nature materials, vol. 15,12 2015.[2] A. Boileau et al, “Tuning of the optical properties of the transparent conducting oxide SrVO3 by electronic correlations,” Advanced Optical Materials, vol. 7, p. 1801516, 01 2019.[3] Patent FR3113185[4] A. Jolivet et al, “Structural, optical, and electrical properties of TiO2 thin films deposited by ALD: Impact of the substrate, the deposited thickness and the deposition temperature,” Applied Surface Science, vol. 608, p. 155214, 2023. Figure 1

Broadband Microelectromechanical Systems‐Based Silicon Nitride Photonic Switch

Over the past three decades, silicon photonic devices have been core to the realization of large‐scale photonic‐integrated circuits. However, silicon nitride is another key complementary metal oxide semiconductor‐compatible material for high‐density photonic‐integrated circuits, having low manufacturing costs, low optical losses, and excellent mechanical properties, that can provide enhanced performance over silicon in an integrated photonic platform. This article presents the design, fabrication, and testing of a proof‐of‐concept switchable silicon nitride photonic coupler that leverages these properties combined with microelectromechanical systems actuation. The photonic platform uses a moveable suspended waveguide to enable efficient out‐of‐plane switching and is built using conventional lithographic techniques to demonstrate the high compatibility with existing microelectronic fabrication techniques. The photonic switch is measured to have an insertion loss of 2.6 dB and an ON/OFF extinction ratio of 34 dB at the output of the suspended waveguide, at a wavelength of 1470 nm. Detailed simulations demonstrate broadband operation over a 600 nm wavelength range from 1.25 to 1.85 μm which is experimentally validated over the range from 1.25 to 1.61 μm. To the best of knowledge, this is the broadest operation range ever demonstrated by a photonic switch in simulation.

Temperature Sensors by Inkjet Printing Compatible With Flexible Substrates: A Review

During the past decade, microelectronics incorporated inkjet printing technology as a versatile tool for industrial applications, as it combines high printing quality and resolution along with low cost compared to conventional microelectronics techniques that require high cost and complex equipment. In addition, inherently, inkjet printing requires no photolithography steps. In this review article, we present temperature sensors that have been manufactured by inkjet printing. Based on the main active sensing material, the research studies are classified into four different types, i.e., metal- and metal oxide-based, carbon-based, polymer-based, and composite that combine the properties of multiple active materials. It is demonstrated that silver ink has been, by far, the most popular material for metal-based temperature sensors with a temperature coefficient of resistance (TCR) of around <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2\times 10^{-{3}}\,\,^{\circ} \text{C}^{-1}$ </tex-math></inline-formula> . Silver sensors as well as almost all metal-, carbon-, and polymer-based sensors were either resistance temperature detectors (RTDs) or thermistors. Regarding polymer and carbon-based sensors, it was found that, in some cases, they outperformed metal-based sensors in terms of TCR, although fabrication using such materials had a less predictable result with a TCR ranging from <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$- 16\times 10^{-{3}}\,\,^{\circ} \text{C}^{-1}$ </tex-math></inline-formula> to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2\times 10^{-{3}}\,\,^{\circ} \text{C}^{-1}$ </tex-math></inline-formula> . Finally, in the case of composite materials as temperature sensors, several combinations of active materials exhibited interesting results and yielded a variety of sensing technologies such as thermocouples and radio frequency-based.

Molecular Layer Deposition of a Hafnium-Based Hybrid Thin Film as an Electron Beam Resist.

The development of new resist materials is vital to fabrication techniques for next-generation microelectronics. Inorganic resists are promising candidates because they have higher etch resistance, are more impervious to pattern collapse, and are more absorbing of extreme ultraviolet (EUV) radiation than organic resists. However, there is limited understanding about how they behave under irradiation. In this work, a Hf-based hybrid thin film resist, known as "hafnicone", is deposited from the vapor-phase via molecular layer deposition (MLD), and its electron-beam and deep-ultraviolet (DUV)-induced patterning mechanism is explored. The hafnicone thin films are deposited at 100 °C by using the Hf precursor tetrakis(dimethylamido)hafnium(IV) and the organic precursor ethylene glycol. E-beam lithography, scanning electron microscopy, and profilometry are used to investigate the resist performance of hafnicone. With 3 M HCl as the developer, hafnicone behaves as a negative tone resist which exhibits a sensitivity of 400 μC/cm2 and the ability to resolve 50 nm line widths. The resist is characterized via X-ray photoelectron spectroscopy (XPS) and infrared spectroscopy (IR) to investigate the patterning mechanism, which is described in the context of classical nucleation theory. This study of hafnicone hybrid MLD demonstrates the ability for the bottom-up vapor deposition of inorganic resists to be utilized in advanced e-beam and DUV lithographic techniques.

Single-Crystalline Thin-Film Memory Arrays of Molecular Ferroelectrics with Ultralow Operation Voltages

Though most of the recently developed molecular ferroelectrics (MFs) exhibit excellent ferroelectric properties, the practical applications are still impeded by the limited polarization axes, poor processing capability for a high-quality thin film, and the incompatibility with matured lithography techniques for microelectronics. Here, we successfully demonstrated MF-based single-crystalline microdevice arrays using a lithography-compatible, solution-processed strategy that can avoid the above-mentioned obstacles at one time, i.e., dewetting-assisted patterning crystallization strategy. As a protype, uniform and well-aligned single-crystalline thin-film arrays of multiaxial MF [3-oxoquinuclidinium]ClO4 ([3-O-Q]ClO4) are prepared. Owing to the well-aligned crystallographic orientation and polarization direction, the obtained single-crystalline nonvolatile memory (NVM) arrays can exhibit an ultralow operating voltage of ∼1.6 V and long endurance cycles of 106, which are superior to other organic NVM devices. This work implies a promising route to high-density single-crystalline memory arrays for data storage, especially for low-cost flexible electronics.

High Curie Temperature Achieved in the Ferromagnetic MnxGe1-x/Si Quantum Dots Grown by Ion Beam Co-Sputtering.

Ferromagnetic semiconductors (FMSs) exhibit great potential in spintronic applications. It is believed that a revolution of microelectronic techniques can take off, once the challenges of FMSs in both the room-temperature stability of the ferromagnetic phase and the compatibility with Si-based technology are overcome. In this article, the MnxGe1−x/Si quantum dots (QDs) with the Curie temperature (TC) higher than the room temperature were grown by ion beam co-sputtering (IBCS). With the Mn doping level increasing, the ripening growth of MnGe QDs occurs due to self-assembly via the Stranski–Krastanov (SK) growth mode. The surface-enhanced Raman scattering effect of Mn sites observed in MnGe QDs are used to reveal the distribution behavior of Mn atoms in QDs and the Si buffer layer. The Curie temperature of MnxGe1−x QDs increases, then slightly decreases with increasing the Mn doping level, and reaches its maximum value of 321 K at the doping level of 0.068. After a low-temperature and short-time annealing, the TC value of Mn0.068Ge0.932 QDs increases from 321 K to 383 K. The higher Ge composition and residual strain in the IBCS grown MnxGe1−x QDs are proposed to be responsible for maintaining the ferromagnetic phase above room temperature.

Multicomponent and multifunctional integrated miniature soft robots.

Miniature soft robots with elaborate structures and programmable physical properties could conduct micromanipulation with high precision as well as access confined and tortuous spaces, which promise benefits in medical tasks and environmental monitoring. To improve the functionalities and adaptability of miniature soft robots, a variety of integrated design and fabrication strategies have been proposed for the development of miniaturized soft robotic systems integrated with multicomponents and multifunctionalities. Combining the latest advancement in fabrication technologies, intelligent materials and active control methods enable these integrated robotic systems to adapt to increasingly complex application scenarios including precision medicine, intelligent electronics, and environmental and proprioceptive sensing. Herein, this review delivers an overview of various integration strategies applicable for miniature soft robotic systems, including semiconductor and microelectronic techniques, modular assembly based on self-healing and welding, modular assembly based on bonding agents, laser machining techniques, template assisted methods with modular material design, and 3D printing techniques. Emerging applications of the integrated miniature soft robots and perspectives for the future design of small-scale intelligent robots are discussed.

Experimental Investigation on Flow Past an Isolated Micro Pin Fin Embedded in a Microchannel

ABSTRACT Micro pin fin heat sink is a very attractive cooling technique for high power density microelectronics. Optimization of its cooling performance requires insightful understanding on fundamental physics of flow inside it, especially around a single pin fin. In the present study, an experimental investigation on flow past an isolated low aspect ratio (height-to-diameter ratio) pin fin embedded in a microchannel is conducted using Micro-PIV. The flow field and vorticity distribution at different channel heights under various Reynolds numbers are obtained. Endwall effect is found to play an important role in flow past the pin fin in the microchannel, and the critical Reynolds numbers are larger than that at the conventional scale. Vorticity concentrations are formed on both sides of the pin fin along the shear layer and intensify with the increase in Reynolds number. Flow fields and vorticity distributions at different heights exhibit different characteristics, especially at higher Reynolds numbers, indicating three-dimensionalities of the flow. Viscous resistance of the endwalls leads to lower overall velocity, smaller extent of the recirculation zone and weaker vorticity in flow layer closer to the top and bottom channel walls. Pressure drop and flow resistance characteristics in the microdevice is analyzed. The effect of aspect ratio of the pin fin on the wake flow is also studied, and the results show that three-dimensionalities increase but critical Reynolds numbers decrease with larger aspect ratios. A comparison with flow across micro pin fin arrays is conducted and differences are observed in velocity field and wake flow features.

The Instrument of the Imaging X-Ray Polarimetry Explorer

Abstract While X-ray spectroscopy, timing, and imaging have improved much since 1962 when the first astronomical nonsolar source was discovered, especially wi the launch of the Newton/X-ray Multi-Mirror Mission, Rossi/X-ray Timing Explorer, and Chandra/Advanced X-ray Astrophysics Facility, the progress of X-ray polarimetry has been meager. This is in part due to the lack of sensitive polarization detectors, which in turn is a result of the fate of approved missions and because celestial X-ray sources appear less polarized than expected. Only one positive measurement has been available until now: the Orbiting Solar Observatory measured the polarization of the Crab Nebula in the 1970s. The advent of microelectronics techniques has allowed for designing a detector based on the photoelectric effect of gas in an energy range where the optics are efficient at focusing in X-rays. Here we describe the instrument, which is the major contribution of the Italian collaboration to the Small Explorer mission called IXPE, the Imaging X-ray Polarimetry Explorer, which will launch in late 2021. The instrument is composed of three detector units based on this technique and a detector service unit. Three mirror modules provided by Marshall Space Flight Center focus X-rays onto the detectors. We show the technological choices, their scientific motivation, and results from the calibration of the instrument. IXPE will perform imaging, timing, and energy-resolved polarimetry in the 2–8 keV energy band opening this window of X-ray astronomy to tens of celestial sources of almost all classes.

New Electrochemically Protective Layer Based on Nanometric Dielectric Coating for Silicon Based Micro Supercapacitors

Dielectric materials have been used for decades for micro and nanoelectronics where their insulation and polarizability properties are critical. However, in the energy storage field, material scientists tends to consider high-k dielectric layers in contact with an active material only as an insulating passivation layer. In microelectronics, this conception has been modified with the study of dielectrics at nanoscale level [1-2] revealing interesting properties scarcely known by other fields [3]. We propose to reconsider the vision of high-k dielectric materials for energy at nanoscale specifically.Based on microelectronic techniques [4], a nanometric-scale thick layer of dielectric is deposited by Atomic Layer Deposition (ALD). Allowing us to create an ultra-thin, pinhole-free alumina (Al2O3) nanometric layers on complex architectures as the entanglement of Silicon nanowires.[5] Microelectronics measurements on a single silicon nanowire (SiNW) is shown to display thickness dependent tunneling electrical conduction. This result brings a new light on this material class in the energy field and allows original approaches : achieving scientific leaps by using thin layers of dielectric to protect the active materials and enhance their lifetime in new environments. As an illustrative application, a silicon based micro-supercapacitor (µSC) protected by a 3 nm alumina layer exhibits Electrical Double Layer Capacitance (EDLC) by means of tunneling current in aqueous electrolyte. This result is an unprecedented for this material, allowing an outstanding lifetime capacity and retaining 99% of its initial capacitance after 2 million cycles. Extended to multiple energy materials, such method could lead to notable progresses [6].

Redefining high-k dielectric materials vision at nanoscale for energy storage: A new electrochemically active protection barrier

Dielectric materials have been used for decades for energy applications where their insulation and polarizability properties are critical. In the energy storage field, most material scientists envision high-k dielectric layers in contact with an active material only as an insulating passivation layer. In microelectronics, this concept has been modified with the study of dielectrics at nanoscale level revealing interesting properties scarcely known by other fields. We propose to reconsider the vision of high-k dielectric materials for energy at nanoscale specifically. Based on microelectronic measurement techniques and nanometric control of dielectric thickness by Atomic Layer Deposition (ALD), an ultra-thin pinhole-free alumina (Al2O3) layer on a silicon nanowire (SiNW) is shown to display thickness dependent tunneling electrical conduction. This result brings a new light on this material class in the energy field and allows original approaches toward achieving scientific leaps. As an illustrative application, a silicon based micro-supercapacitor (MSC) protected by 3 nm of alumina dielectric layer exhibits Electrical Double Layer Capacitance (EDLC) by means of tunneling current in aqueous electrolyte, an unprecedented result for this material, with outstanding lifetime capacity retaining 99% of its initial capacitance after 2 million cycles. Extended to multiple energy materials, such method could lead to notable progress.

Laser-patterned Si/TiN/Ge anode for stable Si based Li-ion microbatteries

Progress in micro/nano-electro-mechanical system (M/NEMS) and microelectronics technologies urgently require the synchronous development of the micro/nano energy storage systems. Herein, a novel patterned Si/TiN/Ge electrode is fabricated on the Si substrate surface by the facile femtosecond-laser direct writing and the microelectronic thin film deposition techniques. The surface-engraved Si/TiN/Ge electrode displays superior cyclability and rate capability when evaluated as anode for lithium ion microbatteries (LIMBs). The patterned TiN interlayer can act as an effective buffer layer to optimize the Li ions storage in the Si substrate, and the introduction of the Ge nanocomposites would further enhance the areal capacity, thus eventually bring the improved electrochemical performance. Moreover, the Li ions storage behaviours are experimentally investigated from the post morphologies of all the cycled electrodes, and theoretically studied by the COMSOL Multiphysics simulations and the first principles calculations. These results would shed light on the new strategy to design and exploit other high-performance Si based LIMBs.

Depth-of-Field-Extended Plenoptic Camera Based on Tunable Multi-Focus Liquid-Crystal Microlens Array.

Plenoptic cameras have received a wide range of research interest because it can record the 4D plenoptic function or radiance including the radiation power and ray direction. One of its important applications is digital refocusing, which can obtain 2D images focused at different depths. To achieve digital refocusing in a wide range, a large depth of field (DOF) is needed, but there are fundamental optical limitations to this. In this paper, we proposed a plenoptic camera with an extended DOF by integrating a main lens, a tunable multi-focus liquid-crystal microlens array (TMF-LCMLA), and a complementary metal oxide semiconductor (CMOS) sensor together. The TMF-LCMLA was fabricated by traditional photolithography and standard microelectronic techniques, and its optical characteristics including interference patterns, focal lengths, and point spread functions (PSFs) were experimentally analyzed. Experiments demonstrated that the proposed plenoptic camera has a wider range of digital refocusing compared to the plenoptic camera based on a conventional liquid-crystal microlens array (LCMLA) with only one corresponding focal length at a certain voltage, which is equivalent to the extension of DOF. In addition, it also has a 2D/3D switchable function, which is not available with conventional plenoptic cameras.

SiOCH Hits the Gas

There is an increasing need for on-site and real-time analyses of complex gas mixtures in many application fields such as industry, air quality, security and medicine. One challenge consists in developing complete and portable multi-gas analysis systems allowing in situ and real-time quantitative analysis of complex gas mixtures. A promising approach is based on the integration of resonating devices on silicon chips by using “standard” microelectronic technologies. The fabrication of these gravimetric gas sensors based on Nano Electro Mechanical System (NEMS) requires the use of a chemical sensitive layer to ensure a better collection and concentration of the target molecules. This enhances the sensitivity in conjunction with the limit of detection. The integration of a chemical sensitive layer on to NEMS fabricated on Si wafers leads to specific material requirements. The use of solvent is prohibited in order to avoid the degradation of the Si nanocantilevers due to capillarity forces,Very thin film thickness (less than few hundred of nanometers) should be deposited on the Si beam in order to avoid filling the gap between the resonant cantilever and the electrodes,The deposition technique should provide good uniformity over a large surface (typically on 200 mm Si wafers) for a collective sensor fabrication.And the material should be optimized to absorb the highest level of targeted gas for a given thickness, reversibly and quickly. In this work, the objective was to develop materials deposited using microelectronic compatible techniques in order to detect light alkanes and aromatic volatile organic compounds such as BTEX (for Benzene, Toluene Ethylbenzene and Xylene). Organosilicate materials are potentially good candidates for this application especially because they are nonpolar or weakly polar materials. In order to better understand the impact of the material chemistry on the detection of hydrocarbon gas and optimize the sensitivity of the chemical layer, a large panel of organosilicate thin films were deposited by different chemical vapor deposition (CVD) techniques. First, SiOCH were deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD), this technique being the most used in the microelectronic industry for dielectric thin-film deposition. Several precursors (diethoxymethylsilane, trimethylsilane or octamethyltrisiloxane) and deposition conditions were used in order to vary their chemical composition and their physical properties. In these SiOCH, the carbon content is mainly under the form of methyl groups bonded to silicon. At the same time, to allow a better flexibility in term of chemical functions, filament assisted chemical vapor deposition (FACVD) was used for the deposition of organosilicate thin films. Indeed, FACVD allow a better control over the precursor fragmentation pathway in comparison to plasma-based techniques. Then, it is possible to add polar groups (such as ethoxy to in case of FACVD of methyltriethoxysilane) or to introduce siloxane rings in the materials (in case of initiated CVD of cyclosiloxane). Finally, the introduction of additional porosity was investigated as another way to potentially improve the sensitivity of the chemical sensitive layers. By using a porogen approach, it is possible to introduce up to 40 % porosity in a PECVD SiOCH. Using a foaming approach, we can go even further (> 50 %). Film properties after deposition and after potential annealing were investigated using multiple characterization techniques (ellipsometry, FTIR and Tof-SIMS). Porosity was characterized by ellipsometric porosimetry and grazing incidence small angle X-ray Scattering. In these material, pores (if any) are nanometrics and porosity is mainly open and interconnected. Thin film response under toluene or pentane exposures was studied using Quartz Crystal Microbalance functionalized with the different SiOCH.Through the synthesis and characterization of these various SiOCH thin films, the role of hydrophobicity, carbon content and specific chemical bonding can be highlighted. It is shown that the hydrophobic nature of SiOCH materials composed of a Si-O-Si backbone with methyl groups bonded to silicon, combined with the presence nanoporosity, lead to very high sensibility. The presence of isolated polar bonds such as ethoxy groups seems beneficial especially for BTEX detection. High partition coefficients toward toluene and pentane can be obtained, at least ten time higher than those measured on more classical polymers such as PDMS. Both deposition techniques (PECVD or FACVD) are able to produce good chemical sensitive layers for the detection of light alkanes and aromatics VOCs and these organosilicates constitute promising solution for the functionalization of NEMS-based gas sensors.Acknowledgment: Developments on FACVD were performed in the frame of a collaboration with TEL, US-Technology Development Center, America.