Microcrystalline Silicon Research Articles

A new approach to increasing the sensitivity of a gas sensor based on nanocrystalline silicon carbide films

It was shown the possibility of increasing the sensitivity of a gas sensor based on nanocrystalline SiC films by using a scheme of a two-component sensing element, one of which is an n-nc-SiC film with electronic conductivity, and the second is an p-nc-SiC film with hole conductivity. It is shown that due to the opposite polarity of changes in resistance in the films under the simultaneous action of gases, the difference in relative resistance changes ∆ in the n-nc-SiC and p-nc-SiC films will always be greater than in each film separately. The expediency of using a two-component sensing element of a gas sensor based on nc-SiC films with electron and hole conduction is shown.

Mechanical Strength Enhancement of Porous Nanocrystalline-Silicon (pnc-Si) Membrane via Titanium-oxide (Ti-O) Coating

Porous nanocrystalline silicon (pnc-Si) membrane is mainly studied as a blood filtration membrane, mimicking the glomerulus filtration membrane of a human kidney. However, the pnc-Si material itself is not hemocompatible and enormous membrane area to thickness ratio makes the membrane to be easily fractured. Silicon surface modification via titanium-oxide (Ti-O) thin film layer deposition has been proven to be hemocompatible and the presence of Ti-O layer has been numerically studied to give higher membrane flexural strength. In this work, square pnc-Si membranes of 2 mm × 2 mm × 20 nm size have been fabricated with and without Ti-O layer. Point loading-unloading nanoindentation method has been performed and the membranes’ displacement behaviour subjected to point loads is studied. The pnc-Si membranes with Ti-O layer were found to attain higher fracture strength, membrane bending stiffness and average hardness with the increase of ~20, ~11 and ~24%, respectively, compared to bare pnc-Si membranes. The mechanical strength of a free-standing pnc-Si membrane is improved by depositing a Ti-O thin film layer on the membrane structure.

Optimization of Mechanical Activation Modes for UHMWPE Dry Mixed Powders and Nanomodificators in the Planetary Ball Mill Pulverisette 7

Introduction. Currently, in various technology areas, bronze, cast iron and other antifriction metals are replaced by polymer composites, which extend significantly service life of tribocoupling. An advanced antifriction polymer is ultra-high-molecular-weight polyethylene. The study deals with determining the optimal specific energy consumption for the mechanical activation of the polymer dry mixed powders and nanomodifiers in the planetary ball mill Pulverisette 7, which ensure the best complex of physico-mechanical and rheological properties of nanocomposites. Materials and Methods. In this work, we used GUR 4120 Ticona ultra-high-molecular-weight polyethylene with a molecular weight of 5 million, a Tuball Matrix Beta concentrate of activated carbon nanotubes at a concentration of 0.1%, calculated with reference to carbon nanotubes, and hydrophobic nanocrystalline silicon dioxide with a dispersion of 20 nm at the same concentration. Mechanical co-activation of polymer powders and nanomodifiers, when varying the specific energy consumption, was carried out in the planetary ball mill Pulverisette 7. The production of films from powders, for studying the elastic-strength and rheological characteristics of nanocomposites, was carried out with the use of the hydraulic press Gibitre. Tests were carried out respectively on the tensile testing machine UAI-7000 M and the rheometer Haake MARS III. Results. It has been established that the best physico-mechanical and rheological properties of nanocomposites are with specific energy consumption for mechanical activation of 3,000‒3,200 J/g that allows us to consider them optimal. The mechanical activation of ultra-high molecular weight polyethylene powder, reducing slightly the elasticity modulus and tensile strength of thermally pressed samples, does not affect the dynamic viscosity of melts at an energy consumption of 650‒4,550 J/g. Discussion and Conclusion. The use of carbon nanotubes and nanocrystalline silicon dioxide at a concentration of 0.1% can significantly improve the physical-mechanical and rheological properties of the polymer with energy costs of 3,000‒3,200 J/g for mechanical activation in planetary ball mills. Nanocrystalline silicon dioxide is a more effective modifier that can be explained by its better dispersion in the polymer matrix due to the lower tendency of nanoparticles to agglomerate.

Crystallite distribution analysis based on hydrogen content in thin-film nanocrystalline silicon solar cells by atom probe tomography

The three-dimensional (3D) distribution of nanosized silicon (Si) crystallites within a hydrogenated nanocrystalline Si (nc-Si:H) material is examined by laser-assisted atom probe tomography (APT). The amorphous and crystalline phases in nc-Si:H are distinguished by obtaining the 3D density distribution of H atoms, because the former contains a high H density. The H content in the amorphous phase is estimated to be approximately 15 at% by APT, which is consistent with that obtained by infrared spectroscopy. Thus, the 3D analysis of H distribution via APT is a powerful method to visualize the real shape of nanosized crystallites within nc-Si:H materials.

Gold nanoparticles plated porous silicon nanopowder for nonenzymatic voltammetric detection of hydrogen peroxide

A voltammetric approach was developed for the selective and sensitive determination of hydrogen peroxide using Au plated porous silicon (PSi) nanopowder modified glassy carbon electrode (GCE). The AuNPs-PSi hybrid structure was synthesized via stain etching procedure followed by an immersion plating method to deposit AuNPs onto PSi via a simple galvanic displacement reaction with no external reducing agent to convert Au3+ to Au0. The as-fabricated AuNPs-PSi catalyst was successfully characterized by XRD, Raman, FTIR, XPS, SEM, TEM and EDS techniques. Well crystalline nature of the as-fabricated hybrid structure with AuNPs size ranging from 5 to 40 nm was observed. The specific surface area and total pore volume for both PSi and AuNPs plated PSi were evaluated using N2 adsorption isotherm technique. Cyclic voltammetry and electrochemical impedance spectroscopy techniques were applied to investigate the catalytic efficiency of AuNPs-PSi modified electrode compared to pure PSi/GCE and unmodified GCE. The sensing performance of the active material modified GCE was thoroughly examined with linear sweep voltammetry (LSV) and square wave voltammetry (SWV) techniques. The AuNPs-PSi/GCE exhibited a remarkable linear dynamic range between 2.0 and 13.81 mM (for LSV) and 0.5–6.91 mM for (SWV) with high sensitivity and low detection limit of 10.65 μAmM−1cm−2 and 14.84 μM for LSV, whereas 10.41 μAmM−1cm−2 and 15.16 μM using SWV techniques, respectively. The fabricated sensor electrode showed excellent anti-interfering ability in the presence of several common biomolecules as well as demonstrated good operational stability and reproducibility with low relative standard deviation. Moreover, the modified electrode showed acceptable recovery of H2O2 in a real sample analysis. Thus, the developed AuNPs-PSi hybrid nanomaterial represents an excellent electrocatalyst for the efficient detection and quantification of H2O2 by the electrochemical approach.

Nanocrystalline‐silicon hole contact layers enabling efficiency improvement of silicon heterojunction solar cells: Impact of nanostructure evolution on solar cell performance

AbstractHydrogenated amorphous silicon (a‐Si:H) is a key enabler in high‐efficiency crystalline silicon solar cells known as the silicon heterojunction technology. Although efforts have been devoted to replacing doped a‐Si:H contact layer by hydrogenated nanocrystalline silicon (nc‐Si:H) to take advantage of its superior optoelectrical properties, it is still unclear whether the nc‐Si:H outperforms the a‐Si:H at the high efficiency level. Here, we show that boron‐doped (p)nc‐Si:H prepared by plasma‐enhanced chemical vapor deposition (PECVD) acts as an efficient hole contact layer, providing not only a mitigation of the parasitic absorption loss but also improvements in passivation and electrical contact properties. This results in an efficiency increase by 0.3%–0.6% absolute compared to the reference cell with the (p)a‐Si:H, and a best cell efficiency of 23.54%. We find that the critical thickness of the (p)nc‐Si:H layers required for gaining high efficiency (tc ~ 15–30 nm) is a factor of 3–6 greater than that of the (p)a‐Si:H. UV Raman spectroscopy and electrical conductivity measurements reveal that the tc of the (p)nc‐Si:H is associated with the layer growth needing for the surface coalescence of nanocrystals, determining the hole selectivity and the contact resistivity at the electrode/(p)nc‐Si:H interface. Our results suggest that such nanostructure evolution can be hastened by using a very‐high‐frequency PECVD process.

Microcrystalline Silicon Tunnel Junction for Monolithic Tandem Solar Cells Using Silicon Heterojunction Technology

In this article, we developed a microcrystalline silicon tunnel junction to be used as a tunnel recombination junction between a large-gap top cell and a silicon heterojunction bottom cell, in a monolithic tandem integration. This junction is composed of a p-type layer on the top of an n-type layer, deposited by plasma-enhanced chemical vapor deposition at low temperature (200 °C). Microcrystalline phase percentage was controlled with Raman spectroscopy and ellipsometry measurements. The total stack has a thickness of 40 nm and an average conductivity around 10 S/cm. Minority carrier lifetime measurements showed an improvement of the field effect and the passivation with the addition of this junction on top of silicon heterojunction solar cells. Moreover, implementation of microcrystalline layer on top of reference rear emitter silicon heterojunction solar cells improved the fill factor and did not induce parasitic absorption above 700 nm. Simple test structures were fabricated in order to characterize the tunnel junction and optimize it. Then, we carried out dark temperature-dependent I-V measurements on those test structures and observed peaks and valleys, characteristic of the junction tunnel behavior. The developed tunnel junction shows low contact resistivity and activation energies; these are promising results for the complete integration on the tandem device.

Reactive Force-Field Molecular Dynamics Study of SiGe Thin Film Growth in Plasma Enhanced Chemical Vapor Deposition Processes

SiGe thin films, such as hydrogenated amorphous silicon germanium (a-SiGe:H) and hydrogenated microcrystalline silicon germanium (μc-SiGe:H), are formed by plasma enhanced chemical vapor deposition (PECVD) methods from SiH4, GeH4, and H2. Thin film properties such as surface morphology, hydrogen content, and crystal structure are greatly affected by process parameters such as a substrate temperature, gas pressure, and gas composition. For example, SiH3 and GeH3 are dominant species when the SiGe thin film with low defect is deposited under low power density conditions. However, the structural defects are formed by SiH and SiH2 that are highly reactive species under high power density conditions. Although the density and flux of these highly reactive species are much lower than those of the dominant species, the electrical properties of the device are greatly affected by a few structural defects. Therefore, to understand the influence of the composition of each precursor on the thin film properties is important. The purpose of the present study is to clarify the influence of the composition of multiple precursors such as SiH3, GeH3, and H under different substrate temperatures on the surface morphology, hydrogen content, and crystal structure.We performed reactive force-field molecular dynamics (ReaxFF MD) simulations. An existing parameter set was modified to match the dissociation energies in gaseous species because bond formation and breaking are particularly important in this study. The substrate was Si (100)– (2×1), and the size of the simulation box was 30.72 Å× 26.88 Å× 45.00 Å. A periodic boundary condition was applied in the x and y directions, and a fixed boundary condition was applied in the z direction. The first bottom layer of the substrate was fixed to prevent vibrations of the substrate up and down. The second and third layers were controlled constantly at desired temperature by the Berendsen thermostat. The temperature was not controlled on the fourth and subsequent layers to prevent direct influences of changing the velocity of atom due to the temperature control on the surface reaction. The substrate temperature was set at 800 K, 1000 K, 1300 K, and 1600 K. 2000 SiH3 molecules with the velocity corresponding to 1300 K in the direction towards the substrate were deposited one by one onto the substrate surface every 7.5 ps. The initial position of the gaseous species was set at 10 Å above the top of substrate Si atoms, and the in-plane (x-y) position were set randomly. The Velocity-Verlet algorithm was used for time integrations corresponding to 0.25 fs time step. A pre-thermal annealing for 7.5 ps and a post-thermal annealing for 60 ps were performed before and after the deposition to fully equilibrate the substrate and deposited thin films.Figure shows front views of the final configurations and results of analysis when the substrate temperature is 800 K, 1000 K, 1300 K, and 1600 K. The yellow, blue, and red represent substrate Si atoms, added Si atoms, and added H atoms, respectively. Gray shown in the figure are gas-solid surfaces. The surface construction algorithm was used to calculate a surface area that is closely related to the surface morphology. The hydrogen content was calculated using the select type algorithm. The structure identification algorithm for the crystal structure was used to characterize the structure of simulated films. These analyses were carried out by the Open visualization tool (OVITO). The surface area decreases as the substrate temperature increases, indicating that the formation of smoother surface at high temperature. The diffusivity of a SiH3 molecule that reached to the surface increases as the substrate temperature increases, and the atomic scale valleys are filled. This tendency is in good agreement with relevant studies. The hydrogen content was calculated by dividing the number of added H atoms by the total number of atoms existing in the system. The hydrogen content decreases as the substrate temperature increases because a hydrogen desorption is promoted as the substrate temperature increases. Figure 1

3D Printing Low-Stiffness Silicone Within a Curable Support Matrix.

Embedded 3D printing processes involve extruding ink within a support matrix that supports the ink throughout printing and curing. In once class of embedded 3D printing, which we refer to as "removable embedded 3D printing," curable inks are printed, cured, then removed from the uncured support matrix. Removable embedded 3D printing is advantageous because low-viscosity inks can be patterned in freeform geometries which may not be feasible to create via casting and other printing processes. When printing solid-infill geometries, however, uncured support matrix becomes trapped within the prints, which may be undesirable. This study builds on previous work by formulating a support matrix for removable embedded 3D printing that cures when mixed with the printed silicone ink to solve the problem of trapped, uncured support matrix within solid-infill prints. Printed specimens are shown to have a nearly isotropic elastic modulus in directions perpendicular and parallel to the printed layers, and a decreased modulus and increased elongation at break compared to specimens cast from the ink. The rheological properties of the support matrix are reported. The capabilities of the printer and support matrix are demonstrated by printing a variety of geometries from four UV and addition-cure silicone inks. Shapes printed with these inks range by nearly two orders of magnitude in stiffness and have failure strains between approximately 50 and 250%, suggesting a wide range of potential applications for this printing process.

Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation.

Metal-induced crystallization of amorphous silicon is a promising technique for developing high-quality and cheap optoelectronic devices. Many attempts tried to enhance the crystal growth of polycrystalline silicon via aluminum-induced crystallization at different annealing times and temperatures. In this research, thin films of aluminum/silicon (Al/Si) and aluminum/silicon/tin (Al/Si/Sn) layers were fabricated using the thermal evaporation technique with a designed wire tungsten boat. MIC of a:Si was detected at annealing temperature of 500 °C using X-ray diffraction, Raman spectroscopy, and field emission scanning electron microscopy. The crystallinity of the films is enhanced by increasing the annealing time. In the three-layer thin films, MIC occurs because of the existence of both Al and Sn metals forming highly oriented (111) silicon. Nanocrystalline silicon with dimensions ranged from 5 to 300 nm is produced depending on the structure and time duration. Low surface reflection and the variation of the optical energy gap were detected using UV–vis spectroscopy. Higher conductivities of Al/Si/Sn films than Al/Si films were observed because of the presence of both metals. Highly rectifying ideal diode manufactured from Al/Si/Sn on the FTO layer annealed for 24 h indicates that this device has a great opportunity for the optoelectronic device applications.

Piezoresistive pressure sensor using nanocrystalline silicon thin film on flexible substrate

A flexible pressure sensor fabricated at processing temperatures as low as 300°C using piezoresistive elements of nanocrystalline silicon (nc-Si) on flexible polyimide substrate is reported. Aluminium induced crystallization (AIC) of Hot Wire Chemical Vapour deposited a-Si:H films is used to obtain the nc-Si films with almost 100 % crystalline fraction as revealed by Raman Spectroscopy, and with a measured piezoresistive gauge factor of 41±3. A novel processing method is adopted, wherein the photoresist itself acts as a mask for the transfer of the pattern on the polyimide diaphragm. This enables bypassing the micromachining step, which otherwise is unavoidable for patterning the sensing elements. A full Wheatstone bridge configuration of nc-Si piezoresistors is realized with acceptable linear response of the output signal for an applied pressure range up to 50 psi and the sensitivity is found to be 183.10±3.48 mV/mA/MPa. A novel pressure jig is also designed with the capability to characterize four sensors simultaneously with an arrangement to apply hydrostatic pressure of compressed air.

Properties of nanocrystalline silicon probed by optomechanics

Abstract Nanocrystalline materials exhibit properties that can differ substantially from those of their single crystal counterparts. As such, they provide ways to enhance and optimize their functionality for devices and applications. Here, we report on the optical, mechanical and thermal properties of nanocrystalline silicon probed by means of optomechanical nanobeams to extract information of the dynamics of optical absorption, mechanical losses, heat generation and dissipation. The optomechanical nanobeams are fabricated using nanocrystalline films prepared by annealing amorphous silicon layers at different temperatures. The resulting crystallite sizes and the stress in the films can be controlled by the annealing temperature and time and, consequently, the properties of the films can be tuned relatively freely, as demonstrated here by means of electron microscopy and Raman scattering. We show that the nanocrystallite size and the volume fraction of the grain boundaries play a key role in the dissipation rates through nonlinear optical and thermal processes. Promising optical (13,000) and mechanical (1700) quality factors were found in the optomechanical cavity realized in the nanocrystalline Si resulting from annealing at 950°C. The enhanced absorption and recombination rates via the intragap states and the reduced thermal conductivity boost the potential to exploit these nonlinear effects in applications including Nanoelectromechanical systems (NEMS), phonon lasing and chaos-based devices.

3D printed self-supporting elastomeric structures for multifunctional microfluidics.

Microfluidic devices fabricated via soft lithography have demonstrated compelling applications such as lab-on-a-chip diagnostics, DNA microarrays, and cell-based assays. These technologies could be further developed by directly integrating microfluidics with electronic sensors and curvilinear substrates as well as improved automation for higher throughput. Current additive manufacturing methods, such as stereolithography and multi-jet printing, tend to contaminate substrates with uncured resins or supporting materials during printing. Here, we present a printing methodology based on precisely extruding viscoelastic inks into self-supporting microchannels and chambers without requiring sacrificial materials. We demonstrate that, in the submillimeter regime, the yield strength of the as-extruded silicone ink is sufficient to prevent creep within a certain angular range. Printing toolpaths are specifically designed to realize leakage-free connections between channels and chambers, T-shaped intersections, and overlapping channels. The self-supporting microfluidic structures enable the automatable fabrication of multifunctional devices, including multimaterial mixers, microfluidic-integrated sensors, automation components, and 3D microfluidics.

Reduction in GaAs interfacial defects via structural phase variation of hydrogenated silicon films

GaAs surface passivation involves the structural phase variation of thin hydrogenated silicon layers from amorphous to microcrystalline phases. An intermediate phase—known as a mixed phase, wherein small crystalline grains are embedded in an amorphous matrix—is identified via Raman spectra and cross-sectional transmission electron microscopy images from amongst the varying phases. When compared with amorphous and microcrystalline silicon passivation layers, mixed-phase silicon layers showed significantly enhanced radiative recombination, which was detected using photoluminescence spectra at the Si/GaAs interface. In addition, the native oxide status of the GaAs surface, owing to Ga–O and As–O bonds detected using X-ray photoelectron spectroscopy spectra, is considerably lowered owing to the mixed-phase silicon deposition. It is thus concluded that mixed-phase silicon layers show high potential for reducing GaAs interfacial defects in optoelectronic devices.

Optimization of front SiNx/ITO stacks for high-efficiency two-side contacted c-Si solar cells with co-annealed front and rear passivating contacts

In this contribution, we present an electron selective passivating contact metallised with a low temperature process to target front side applications in crystalline silicon (c-Si) solar cells. In addition to an interfacial silicon oxide (SiOx) and an in-situ phosphorous doped micro-crystalline silicon (μc-Si(n)) layer, it comprises an ultra-thin indium tin oxide (ITO) layer of 15 nm for lateral conductivity and a hydrogen rich silicon nitride (SiNx:H) layer which serves as hydrogen (H) reservoir and as anti-reflection coating. We use one single thermal treatment for 30 min at 350 °C to sinter the screen-printed paste, to recover sputtering damage induced during ITO deposition, and to diffuse hydrogen from the SiNx:H layer towards the c-Si/SiOx interface where it passivates interfacial defects.Applied to symmetrically processed textured samples, we find implied open-circuit voltage (iVOC) > 728 mV for optimal ITO thickness of 15 nm and annealing temperatures of 350 °C. The developed stack was applied on the front textured side of co-annealed (800 °C) p-type c-Si solar cells in combination with a tunnel oxide hole selective passivating contact on the rear side. We demonstrate solar cells with fill factor (FF) up to 81.9% and an open-circuit voltage (VOC) up to 719 mV. With a short-circuit current density (JSC) of 38.6 mA/cm2, we obtain a final cell efficiency to 22.8%. We find that the annealing of the SiNx:H/ITO stack strongly increases the ITO free carrier density penalizing the solar cell spectral response at high wavelengths.

Investigation of Microcrystalline Silicon Thin Film Fabricated by Magnetron Sputtering and Copper-Induced Crystallization for Photovoltaic Applications

Microcrystalline silicon, which is widely used in the microelectronics industry, is usually fabricated by chemical vapor deposition techniques. In recent years, magnetron sputtering has been considered as an alternative because it is a simpler, cheaper and more eco-friendly technique. The big drawback of this technique, however, is the need to recrystallize the as-deposited amorphous silicon, which can be done by metal-induced crystallization. Among the different suitable metals, copper has not been extensively investigated for this purpose. Furthermore, the applicability of the microcrystalline film prepared by this method has not been evaluated for photovoltaic device fabrication. Therefore, this paper reports the fabrication of p-type microcrystalline silicon thin film by magnetron sputtering and copper-induced crystallization techniques, and evaluates its appropriateness for solar cell fabrication. In the first step, 60 nm of silicon followed by 10 nm of copper were deposited on n-type silicon wafer and glass substrates, both by the magnetron sputtering technique. Then, the as-deposited samples were annealed at temperatures from 450 °C to 950 °C. The crystal properties of the resulting films were characterized by Raman and X-ray diffraction spectroscopies and optical and secondary emission microscopies, while their electrical characteristics were determined by Hall-effect, J-V curve and external quantum efficiency measurements. These characterizations confirmed the formation of a layer of microcrystalline silicon mostly in the <111> direction with a crystallization ratio of 93% and a largest grain size of 20 nm. The hole concentration and mobility of the fabricated p-type microcrystalline silicon layer were about 1017~1019 cm−3 and 8 cm2/V.s, respectively. By using the fabricated film as the emitter layer of a p-n junction solar cell, a good rectification ratio of 4100 and reverse saturation current density of 85 nA.cm−2 were measured under dark conditions. The highest photovoltaic conversion efficiency, i.e., 2.6%, with an open-circuit voltage of 440 mV and short-circuit current density of 16.7 mA/cm2, were measured under AM1.5G irradiance. These results indicate that microcrystalline silicon created by magnetron sputtering and copper-induced crystallization has considerable potential for photovoltaic device fabrication.

Simulation and optimization of a-Si: H/μc-Si: H tandem solar cell with thinner active layers

In this study, the performances of a-Si: H(n-i-p) /μc-Si: H(n-i-p) tandem solar cell based on hydrogenated amorphous silicon (a-Si: H) and hydrogenated microcrystalline silicon (μc-Si: H) with thinner active layers were investigated by using numerical simulation. For simulation, a one-dimensional computer code AMPS-1D was used to investigat the effect of the top single cell n+ layer nature, the effect of the top single cell n+ μc-Si: H layer doping concentration (ND) and, the effect of the two active layers thicknesses, i-a-Si: H layer and i-μc-Si: H layer on the performances of the tandem cell. However, the merit figures, like J(V) characteristics at dark and under illumination, the electric fields, the energy band diagrams and, the cell output parameters are calculated and investigated.According to our calculations it is found that, by using a n+μc-Si: H layer with a doping concentration value ND = 1019 cm−3 instead of a n+ a-Si: H layer in the n-i-p top single cell the tandem solar cell performances were performed. It is also obtained, a values of 50 nm and 600 nm for the active layers i-a-Si: H and i-μc-Si: H thicknesses, respectively, are recommended for a-Si: H/μc-Si: H tandem solar cell good performances. Lastly, the tandem solar cell with top single cell n+μc-Si :H layer and with a thinner active layers thicknesses has the higher output parameters (JSC=10.52 mA/cm2, VOC=1414 mV, FF = 80.2 % and, the efficiency = 12.14 %).

Design and optimization of hole collectors based on nc-SiOx:H for high-efficiency silicon heterojunction solar cells

Low activation energy (Ea) and wide bandgap (Eg) are essential for (p)-contacts to achieve effective hole collection in silicon heterojunction (SHJ) solar cells. In this work, we study Plasma-Enhanced Chemical Vapor Deposition p-type hydrogenated nanocrystalline silicon oxide, (p)nc-SiOx:H, combined with (p)nc-Si:H as (p)-contact in front/back-contacted SHJ solar cells. We firstly determine the effect of a plasma treatment at the (i)a-Si:H/(p)-contact interface on the thickness-dependent Ea of (p)-contacts. Notably, when the (p)nc-Si:H layer is thinner than 20 nm, the Ea decreases by applying a hydrogen plasma treatment and a very-high-frequency (i)nc-Si:H treatment. Such an interface treatment also significantly reduces the contact resistivity of the (p)-contact stacks (ρc,p), resulting in an improvement of 6.1%abs in fill factor (FF) of the completed cells. Thinning down the (i)a-Si:H passivating layer to 5 nm leads to a low ρc,p (144 mΩ⋅cm2) for (p)-contact stacks. Interestingly, we observe an increment of FF from 72.9% to 78.3% by using (p)nc-SiOx:H layers featuring larger differences between their optical gap (E04) and Ea, which tend to enhance the built-in potential at the c-Si/(i)a-Si:H interface. Furthermore, we observe clear impacts on ρc,p, open-circuit voltage, and FF by optimizing the thicknesses of (p)-contact that influence its Ea. In front junction cells, the vertical and lateral collection of holes is affected by ρc,p of (p)-contact stacks. This observation is also supported by TCAD simulations which reveal different components of lateral contributions. Lastly, we obtain both front and rear junction cells with certified FF well-above 80% and the best efficiency of 22.47%.

Development of a new additive manufacturing platform for direct freeform 3D printing of intrinsically curved flexible membranes

The wearable technology market has been expanding from wearable medical devices for non-invasive continuous monitoring of patient vital signs to wearable devices for tracking fitness activities that any person can access. Regardless of their form or function, desirable characteristics of wearable devices are the ability to be flexible, conformal, and easily attachable to the human body. However, as the human body is intrinsically curved and irregular, flat devices often have poor interfacial adhesion with the human body. This often leads to interfacial delamination and eventual detachment of the device. Therefore, a new additive manufacturing (AM) platform, a direct freeform 3D printing process (DF3DP), is proposed to allow direct construction of intrinsically curved 3D surfaces during the material deposition phase without the need for any pre-shaped supporting molds or templates. This 3D freeform printing process involves a supporting matrix made up of calcium alginate microgels, printing material made from silicone ink, and freeform printing paths derived from customized G-codes that conform exactly to the scanned human surface profile. Curved meshes mimicking the human elbow were used as a demonstration. A static contact stability test showed that the printed 3D silicone mesh was highly conformal to the model elbow surface as compared to a 2D flat mesh. A dynamic contact stability test was also conducted by subjecting both meshes to 100 cycles of mechanical flexion and extension, proving that intrinsically curved surfaces can provide better contact stability for complex human body surfaces undergoing motion than can flat surfaces. These results have proven that intrinsically curved membranes or structures fabricated by DF3DP can reduce the interfacial shear stress and occurrence of cracks and delamination while maintaining structural integrity and stability during use without compromising the comfort of the users. Our approach can resolve interfacial issues in flexible substrates and has great potential for epidermal devices or soft robotics via its long-term sustainable performance.

Comparison of using p-nc-SiOx:H and p-nc-Si:H as window layer in amorphous silicon based solar cells

One of the most influencing parameters on the performance of amorphous silicon (a-Si:H) based solar cells is the window layer material. In this way, different kinds of p layers have been studied and investigated for using as window and buffer layers in a-Si:H based devices. The main purpose of this work is to compare the effect of two different p layers, one based on nanocrystalline silicon (nc-Si:H) and the other based on nanocrystalline silicon oxide (nc-SiOx:H), when that using as window layer in two p-p-i-n single junction a-Si:H based solar cells.The behavior of our two structures was simulated by using AMPS-1D, a one- dimensional simulation program for solar cells. Under A.M 1.5 illumination, our calculations results reveal that the structure with p-nc-SiOx:H type window layer shows a higher electrical performances with a value of the efficiency (η) equal to 8.28 %, compared to the cell with p- nc-Si:H window layer (η = 7.83 %). Moreover, a better quantum efficiency (QE) in the short wavelength range for the first structure is due to the higher band-gap and the transparency of the p nc-SiOx:H window layer. Finally, the comaparison of our simulation results with other experimental results was realized and a vigorous agreement was obtained.