Two Si 3N 4 materials with either tensile or compressive residual microstresses localized at triple-grain junctions have been analyzed with respect to their fracture behavior and microstructural characteristics. Residual tensile stresses at triple pockets were obtained, upon addition of Sc 2O 3, by initiating the crystallization of Sc 2Si 2O 7 with a negative volume change. On the other hand, compressive microstresses localized at triple-grain junctions were induced by adding fine ZrO 2 particles to the Si 3N 4 material, which underwent martensitic transformation upon cooling with a positive volume change. The presence of these highly localized stress fields has been shown to actually be the critical factor in determining the fracture mode of Si 3N 4 materials and, accordingly, their respective fracture toughness. In particular, tensile stress fields at triple-grain pockets can trigger debonding and splitting of the crack tip at the interface and, therefore, may provide a precursor effect for elastic bridging in the crack wake.
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