4 H - Si C single crystalline substrates were implanted at room temperature with 150keV Al+ ions using fluences of 4×1014, 1×1015, and 2×1015cm−2 with current density of 2.5μAcm−2. The samples were subsequently annealed at 1100°C in N2 for 1h in order to analyze their structural recovery. The disorder induced in both sublattices by the Al+ ions was studied by backscattering spectrometry in channeling geometry with a 3.5MeV He2+ beam. The results were compared with the optical properties of the samples measured by spectroscopic ellipsometry. In a previous work, we concluded that during the postimplantation annealing of a highly damaged SiC crystalline material the short distance order can be recovered, while the long distance disorder remains. We also presented the possibility to have grains of different polytypes oriented faraway from the original direction. Now, this alternative is confirmed by the cross-sectional transmission and high resolution electron microscopy studies, carried out to obtain information about the crystal structure.