Secondary Ion Mass Spectrometry Method Research Articles

Quantitative aspects of ToF-SIMS analysis of metals and alloys in a UHV, O2 and H2 atmosphere

Although secondary ion mass spectrometry (SIMS) is a versatile method used in the fields of surface analysis, depth profiling and elemental and molecular mapping, it also lacks quantification capabilities. The main reason for this is the matrix effect, which influences the ionization yield of secondary ions with respect to the substrate from which the analyzed compounds originate. There are several approaches to reduce the matrix effect, and gas flooding is one of the easiest methods to apply. In this work, we have investigated the possibilities of the ToF-SIMS method for the quantification of selected metals and alloys containing these metals in different ratios by reducing the matrix effect in the presence of different atmospheres. The measurements were performed in the ultra-high vacuum (UHV) environment, H2 and O2 atmospheres. H2 flooding shows the most significant improvements compared to the UHV analysis, while O2 is also promising but has some limitations. Improvements are most evident for the transition metals Ti, Cr, Fe, Co and Ni employed in our study, while the p-block elements such as Al and Si do not change so extensively. The deviations from the true atomic ratios of selected transition metals in different alloys reach a maximum of only 46 % when analyzed in the H2 atmosphere. In contrast, these values are 66 and 228 % for the O2 atmosphere and UHV environment, respectively. Our results suggest that gas adsorption and consequent formation of a new matrix on the surface, especially in the case of hydrogen, reduces the differences between the different chemical environments and electronic structures of the surface. In this way, the quantitative aspects of the SIMS method can be improved.

Baddeleyite microstructural response to shock metamorphism in three enriched shergottites and implications for U–Pb geochronology

Baddeleyite (monoclinic zirconia; m-ZrO2) occurs as a late-stage accessory mineral in shergottites and has been used to determine U–Pb igneous crystallization ages via in-situ secondary ion mass spectrometry (SIMS). During shergottite ejection from the surface of Mars, baddeleyite develops a range of microstructures primarily due to a series of shock-induced transformations to high pressure and temperature polymorphs. It remains poorly constrained to what extent U–Pb systematics in baddeleyite are sensitive to shock conditions experienced by shergottites. To investigate this, we examined baddeleyite in the enriched shergottites Jiddat al Harasis (JaH) 479, Northwest Africa (NWA) 10299, and NWA 12919, which bridge the gap in shock conditions represented in previous microstructural studies. Electron backscatter diffraction (EBSD) analysis reveals that although some baddeleyite grains retain magmatic microstructures (i.e. homogenous crystallographic orientations and twinning of igneous origin), there is widespread phase transformation to high-pressure orthogonal polymorphs (o-ZrO2) followed by reversion. JaH 479 contains more grains with preserved magmatic microstructures than the other two shergottites, suggesting that it experienced lower bulk shock pressures. Nanometer-scale reverted m-ZrO2 in NWA 10299 and NWA 12919 further points to insufficient post-shock temperatures; this contrasts with JaH 479 where greater variation in local temperature conditions enabled the development of µm-scale domains of reverted m-ZrO2. Individual grains that are separated into two distinct microstructural domains may reflect controls on shock propagation due to relative density contrast among the surrounding phases.SIMS U–Pb baddeleyite analysis yields igneous crystallization ages of 210 ± 9 Ma (JaH 479), 196 ± 11 Ma (NWA 10299), and 188 ± 11 Ma (NWA 12919). At the SIMS resolution, we find no clear evidence for significant Pb loss in the surveyed baddeleyite grains, suggesting that temperatures during the formation of both nm-scale and µm-scale reverted m-ZrO2 in the three shergottites were insufficient to cause significant Pb diffusion. Given the robust baddeleyite U–Pb isotope systematics in the majority of shergottites dated by SIMS methods thus far, we argue that shock conditions experienced by the bulk of shergottites were insufficient to introduce significant U–Pb isotopic mobility, which is limited to grains showing microstructural evidence for extensive post-shock heating and recrystallization. Our findings place new constraints on baddeleyite microstructural response to shock conditions of shergottite ejection and demonstrate that microstructural observations are critical when using baddeleyite as a chronometer in shocked planetary materials.

Comprehensive investigation of sputtering deposition pressure effects on a-InGaZnO Schottky diodes

The effects of Ar sputtering deposition pressure on the optical, structural, morphological, and electrical properties of amorphous InGaZnO thin films were investigated. The InGaZnO thin films, which have amorphous structures determined by grazing incidence x-ray diffraction, contained In, Ga, Zn, and O confirmed by secondary ion mass spectrometry method. Additionally, when the thicknesses of the deposited thin films are examined, it was seen that the profilometer measurement results of the crater formed by secondary ion mass spectrometer and scanning electron microscope measurement results are nearly similar, and it is approximately 100 nm. The surface roughness, obtained from Atomic Force Microscopy results, show that decreased up to a particular value with the increase of the working pressure, and then the surface roughness increased. The optical band gaps of the films were obtained in the range of 3.50 eV−3.58 eV via Tauc relation by using the Ultraviolet-Visible measurements carried out in the wavelength range of 200 nm−1100 nm. It was seen that the optical band gap was decreased with the increase in Ar pressure. The electrical properties of InGaZnO thin film-based Schottky diodes, such as the barrier height, ideality factor, saturation current, series resistance, and shunt resistance, have also been studied comprehensively. The electrical results showed that diode properties change with increasing deposition pressure.

Comparison of AMS, TIMS, and SIMS techniques for determining uranium isotope ratios in individual particles.

The determination of isotope ratios in individual uranium particles is very important for nuclear safeguards. In this work, accelerator mass spectrometry (AMS), thermal ionization mass spectrometry (TIMS), and secondary ion mass spectrometry (SIMS) were applied to isotope ratio analysis of individual uranium particles and compared in terms of background, measurement accuracy, and efficiency. Several individual uranium particles (1-7μm) from certified reference materials were used as samples. The results show that the average values of blank counting rate of 235 U for AMS, FT-TIMS (FT: fission track), SEM-TIMS (SEM: scanning electron microscope), and SIMS were 7.3, 7.8, 2.7 and 2.2cps, respectively. The relative error of 234 U/235 U and 234 U/236 U isotope ratios of the particles from U200 for AMS were within 10% and 20%, whereas the results of FT-TIMS and SIMS were within 5% and 10%, respectively. The relative error and external precision of 234 U/238 U and 235 U/238 U of the particles from U850 for the method of AMS, SEM-TIMS, and SIMS were within 10% and 5%, respectively. For 236 U/238 U, the average values of the relative error and external precision measured by AMS were within 5%, which measured by SEM-TIMS and SIMS were all within 10%. AMS has advantages in measuring 236 U/238 U. The measurement time of AMS and SEM-TIMS was shorter than that of FT-TIMS and longer than that of SIMS. It is considered that AMS and SEM-TIMS have a certain development prospect, and it is necessary to research deeply.

EFFECT OF RAPID THERMAL ANNEALING TEMPERATURE ON THE ELECTROPHYSICAL PROPERTIES OF THE OHMIC CONTACT OF Ti/Al /Ni METALLIZATION TO THE GaN/AlGaN HETEROSTRUCTURE

Effect of rapid thermal annealing temperature on the electrophysical properties of the ohmic contact of Ti/Al/Ni metallization with layer thicknesses of 20/120/40 nm to the GaN/AlGaN heterostructure with a two-dimensional electron gas on a sapphire substrate has been discovered by transmission line measurement and secondary ion mass spectroscopy methods. Rapid thermal annealing of the samples was carried out in a nitrogen atmosphere at the temperature ranging from 850 to 900 °C for 60 s. It has been discovered that a high-resistance heterostructure layer with a thickness of about 25 nm is located on the initial samples between metallization and the two-dimensional electron gas, which prevents the formation of ohmic contact. After rapid thermal annealing at the temperature of less than 862,5 °C, the metallization components interact with each other and with the heterostructure, which leads to the decrease in the thickness of the high-resistance heterostructure layer to 15–20 nm and to the nonlinearity of the I – V characteristic. At rapid thermal annealing temperatures in the range from 862,5 to 875 °C, the thickness of the high-resistance heterostructure layer decreases to several nanometers due to the interaction of Ti/Al/Ni metallization components with the heterostructure, which promotes the tunneling effect of charge carriers and formation of a high-quality ohmic contact with a resistivity of about 1⸱10 –4 Ohm∙cm 2 . With an increase of the rapid thermal annealing temperature over 875 °C, the interaction of the metallization and heterostructure components occurs throughout the entire depth, the two-dimensional electron gas degrades, and the I – V characteristic of the contact becomes nonlinear. The results obtained can be used in the technology for creating GaN-based products with a two-dimensional electron gas.

New SIMS method to characterize hydrogen in polysilicon films

A new analysis protocol for profiling the hydrogen (H) concentration depth distributions in polysilicon (poly-Si) thin films on Si oxide was developed by using secondary ion mass spectrometry (SIMS). Traditional SIMS determination of H concentrations in poly-Si films is to monitor and collect the atomic H−, but this analysis method presents some challenges for providing stable and repeatable H depth profiles, especially, for shallow profiling in thinner poly-Si films on thicker Si oxide films. In this paper, we present a thorough study of the SIMS characterization of H levels in poly-Si thin films on Si oxide. We describe an approach for the use of cluster SiH− instead of atomic H− to determine the H concentrations. The utilization of the SiH− cluster ion minimizes both H adsorption effects on the film surface regions and sample surface charging effects arising from the Si oxide layer underneath, thus enhancing the secondary ion signal stability in poly-Si films, as discussed with secondary ion energy distribution on the samples. This method differs from the conventional SIMS analysis of H in thin films and significantly improves the data quality and accuracy. Fourier transform infrared spectroscopy analysis was used to study the Si–H chemical bonding information for investigating the nature of the SIMS collected SiH− cluster ions. Both the H implant sample with no significant Si–H bonding and the poly-Si samples with high levels of H and the weak Si–H bonding exhibited strong SiH− secondary cluster ion intensities in our studies. This indicates the cluster ion signals arise from either the combination of Si and H ions through the physics formation process or weak chemically bonded Si and H.

Matrix effects during in situ U-Pb dating of perovskite with variable crystal structure: Evidence from the Tazheran Massif, Russia

U-Pb geochronology of perovskite is one of the most reliable means of dating notoriously difficult to date and economically important kimberlites, carbonatites, and skarns. Matrix effects—isotopic variations due to chemical composition and crystal structure—are known to affect in situ U-Pb dating, but have not been documented in perovskite. Perovskite from the Tazheran Massif, Russia, has become a commonly used standard for U-Pb dating, so rigorously testing its general applicability is therefore critical. In this study, comparison between U-Pb ages generated by precise isotope dilution-thermal ionization mass spectrometry (ID-TIMS) and in situ dating methods including both secondary ion mass spectrometry (SIMS) and laser ablation inductively coupled plasma mass spectrometry (LA-ICPMS) for a series of perovskite crystals from the Tazheran Massif (Tazh-1, Tazh-2, Tazh-3, Tazh-7Bl, and Tazh-7Br) suggests that the in situ ages of some perovskite crystals (Tazh-1, Tazh-7Bl, and Tazh-7Br) are systematically offset from their corresponding ID-TIMS ages. Hence, not all Tazheran perovskite grains are suitable as standards and some previously published work may suffer from unrecognized inaccuracies. Various factors are investigated in an attempt to identify the origin(s) of the matrix effect biasing the in situ measurements. Although there are so far only a limited number of perovskite grains analyzed by all SIMS, LA-ICPMS, and TIMS methods, grains Tazh-1, Tazh-7Bl, and Tazh-7Br all have extremely low FeO, Nb, and LREE contents compared with the other Tazh perovskite and well characterized reference materials (AFK-5 and Ice River), indicating that such chemical variability may cause analytical differences. Furthermore, and perhaps more importantly, the Tazh-1, Tazh-7Bl, and Tazh-7Br perovskite grains are cubic and thus have different crystal structure from most Tazh perovskite and their standards that are orthorhombic. Therefore, crystal structure could be the principal reason for the matrix effect, with secondary matrix effects due to differences in chemical composition, that need to be taken into account in future in situ U-Pb dating of perovskite.

The trace element composition of chondrule constituents: Implications for sample return methodologies and the chondrule silicate reservoir

AbstractSample return missions represent great opportunities to study terrestrially uncontaminated solar system materials. However, the size of returned samples will be limited, and thus, it is necessary to understand the most appropriate techniques to apply. Accordingly, the sensitivity of laser ablation inductively coupled plasma mass spectrometry (LA‐ICPMS) and secondary ion mass spectrometry (SIMS) was compared through the analyses of trace elements in reference materials and the Allende CV3 chondrite. While the SIMS method was found to be more sensitive than the laser method toward all elements of interest, the LA‐ICPMS appears to be more suitable in terms of precision for certain elements. Using both analytical techniques, we measured chemical composition of an Allende chondrule and its igneous rim. These data were used to understand the nature of the reservoir that interacted with the host chondrule during formation of its igneous rim. We find that the igneous rim is enriched in silica, alkalis, and rare earth elements compared to the host chondrule. We suggest that the igneous rim could be explained by melting of a mixture of the chondrule‐like and REE‐enriched CAI‐like precursors that accreted on the surface of the host chondrule followed by gas‐melt interaction with a silica‐ and alkali‐rich gas. Alternatively, these observations could be interpreted as a result of interaction between the chondrule and the melt resulting from partial melting of a pre‐existing planetesimal in the early stages of its differentiation.

Maximum Ti concentrations in Si quantified with atom probe tomography (APT)

Atom Probe Tomography (APT) is used to explore Si into which a high concentration of Ti has been incorporated through ion implantation and pulsed laser melting. Ti shows abundant segregation out of the Si, with regions near the surface showing evidence of the classic “cellular breakdown” morphology characteristic of constitutional supercooling. Ti concentrations in excess of the nominal Mott limit have previously been reported, but these concentrations have relied on secondary ion mass spectrometry (SIMS) measurements, which are susceptible to artifacts. The APT method provides improvements over the SIMS method and shows that Ti concentrations are below the Mott limit everywhere outside of the broken-down regions below the surface SiO layer. The data confirm that Ti behaves as would be expected under a conventional rapid solidification theory. This has implications for how Ti in Si concentration data produced by non-atomistic techniques are interpreted and also indicates that the use of the conventional solidification apparatus can be used to predict Ti concentrations that may be achievable using implantation and laser melting techniques.

Using a lactadherin-immobilized silicon surface for capturing and monitoring plasma microvesicles as a foundation for diagnostic device development

Microvesicles (MVs) are found in several types of body fluids and are promising disease biomarkers and therapeutic targets. This study aimed to develop a novel biofunctionalized surface for binding plasma microvesicles (PMVs) based on a lab-on-a-chip (LOC) approach. A new lactadherin (LACT)-functionalized surface was prepared and examined for monitoring PMVs. Moreover, two different strategies of LACT immobilization on a silicon surface were applied to compare different LACT orientations. A higher PMV to LACT binding efficiency was observed for LACT bonded to an αvβ3 integrin–functionalized surface compared with that for LACT directly bonded to a glutaraldehyde-modified surface. Effective binding of PMVs and its components for both LACT immobilization strategies was confirmed using spectral ellipsometry and time-of-flight secondary ion mass spectrometry methods. The proposed PMV capturing system can be used as a foundation to design novel point-of-care (POC) diagnostic devices to detect and characterize PMVs in clinical samples.Graphical

Best Practices for Determination of Initial 10Be/9Be in Early Solar System Materials by Secondary Ion Mass Spectrometry

Beryllium‐10 (t1/2 = 1.4 Ma) is a short‐lived radionuclide present in the early Solar System. It is produced solely by irradiation reactions and can provide constraints on the astrophysical environment of the Sun’s formation. Calcium‐ and aluminium‐rich inclusions (CAIs), the first solids formed in the Solar System, show clear evidence for live 10Be at their time of formation, but it is unclear whether they record the same initial 10Be/9Be ratio. In this study, we examine the secondary ion mass spectrometry methods used to determine the initial 10Be/9Be ratio in meteoritic inclusions. Based on analyses of synthesised matrix‐matched glass reference materials, we show that the effects of differing major element bulk compositions on the secondary ion yields of Be and B are minor for relevant phases. We demonstrate the importance of using the mean square weighted deviation (MSWD) to interpret the significance of the initial 10Be/9Be value. For thirty‐two CAIs, we re‐calculated the regressions using literature data, finding that several have unacceptably high MSWD. We calculate the effects of possible sources of isotopic disturbance. Finally, we outline best practices for reporting 10Be–10B data, to enable a more refined determination of the initial 10Be/9Be ratio in the early Solar System.

Novel Secondary Ion Mass Spectrometry Methods for the Examination of Metabolic Effects at the Cellular and Subcellular Levels.

The behavior of an animal has substantial effects on its metabolism. Such effects, including changes in the lipid composition of different organs, or changes in the turnover of the proteins, have typically been observed using liquid mass spectrometry methods, averaging the effect of animal behavior across tissue samples containing multiple cells. These methods have provided the scientific community with valuable information, but have limited resolution, making it difficult if not impossible to examine metabolic effects at the cellular and subcellular levels. Recent advances in the field of secondary ion mass spectrometry (SIMS) have made it possible to examine the metabolic effects of animal behavior with high resolution at the nanoscale, enabling the analysis of the metabolic effects of behavior on individual cells. In this review we summarize and present these emerging methods, beginning with an overview of the SIMS technique. We then discuss the specific application of nanoscale SIMS (NanoSIMS) to examine cell behavior. This often requires the use of isotope labeling to highlight specific sections of the cell for analysis, an approach that is presented at length in this review article. We also present SIMS applications concerning animal and cell behavior, from development and aging to changes in the cellular activity programs. We conclude that the emerging group of SIMS technologies represents an exciting set of tools for the study of animal behavior and of its effects on internal metabolism at the smallest possible scales.

Использование импульсного лазерного отжига для формирования омических контактов Mo/Ti к алмазу

The effect of pulsed laser annealing on the formation of ohmic Mo/Ti contacts to diamond is studied. Using the method of secondary-ion mass spectrometry, it was shown that laser annealing of the contacts leads to effective diffusion of carbon atoms into the titanium layer and the formation of titanium carbide in the transition region with a diamond with a thickness of 15-20 nm. Rapid thermal annealing of the same contact system is accompanied by a sharp increase in the oxygen content in the titanium layer and in the transition layer with diamond and the formation of titanium oxide. In this case, the titanium carbide phase is not formed in the Ti-C transition layer. It was also shown that, in the used laser annealing mode, graphitization of the contact layer of diamond does not occur, which could drastically reduce the mechanical strength and adhesion of the contacts.

Measurement of the Distribution of Boron on Prior Austenite Grain Boundaries by Means of Time-of-Flight Secondary Ion Mass Spectrometry Method

Measurement of the Distribution of Boron on Prior Austenite Grain Boundaries by Means of Time-of-Flight Secondary Ion Mass Spectrometry Method

Effect of 4H-SiC Target Temperature under Ion Irradiation on the Distribution Profile of Al+ Ions

4H-SiC was irradiated with Al+ions at an energy of 190 keV. The depth profiles of implanted aluminum were obtained using the secondary ion mass spectrometry method; a comparison was made with profiles calculated in the SRIM program. Using Rutherford backscattering in channeling mode, we studied the amorphization of the crystal structure after ion implantation in the target at room temperature and 400° C. The fluence of 1015 cm−2 was shown to completely disorder the crystal structure under irradiation of a room temperature target. It was found that after ion irradiation of a target heated to 400° C, the penetration depth of the embedded impurity increases. An increase in the target temperature during irradiation leads to the recombination of a significant number of simple defects and the restoration of the crystal structure. The topography of the samples before and after ion irradiation was compared.

New geochronologic and paleomagnetic results from early Neoproterozoic mafic sills and late Mesoproterozoic to early Neoproterozoic successions in the eastern North China Craton, and implications for the reconstruction of Rodinia

Abstract The interval from the late Mesoproterozoic to early Neoproterozoic is generally considered as a critical time for the amalgamation of Rodinia. The location of the North China Craton (NCC) in Rodinia remains contentious and demands greater paleomagnetic constraints. A combined geochronologic and paleomagnetic study was conducted on the late Mesoproterozoic to early Neoproterozoic rocks in the eastern NCC. Three sills were dated at ca. 945 Ma and one at ca. 920 Ma through use of the zircon U-Pb secondary ion mass spectroscopy method. Paleomagnetic investigation revealed no significant discrepancy between these sills. A positive baked-contact test, secular variation test and presence of reversals together support the primary origin interpretation for the remnant magnetization. A high-quality pole at (28.2 °S, 141.9 °E, A95 = 10.4°) was thus obtained by averaging our new results and a virtual geomagnetic pole previously reported for a ca. 920 Ma sill in the region. These Neoproterozoic sills intruded the successions that contain correlative strata that are named Nanfen, Xinxing, and Liulaobei formations in Liaoning, Jiangsu, and Anhui provinces, respectively. The Nanfen Formation and its equivalents are constrained between ca. 1120 and ca. 945 Ma by detrital zircons and the well-dated mafic sills. The paleomagnetic inclinations observed from the lower parts of the Nanfen, Xinxing, and Liulaobei formations are notably steep. The corresponding poles from these rock units are consistent and averaged at 38.6 °N, 136.7 °E (A95 = 3.2°). The quality of this pole is strengthened by a positive reversal test and its distinctiveness from the younger poles of the NCC. In the middle part of the Nanfen Formation, however, the paleomagnetic directions are characterized by moderate inclinations, being significantly different from those in the lower part of the Nanfen Formation and its equivalents. The calculated pole for the upper part of the Lower Member of the Nanfen Formation is at 8.0 °N, 128.5 °E (A95 = 7.9°). Another pole obtained from the Middle Member of the Nanfen Formation is at 11.2 °S, 127.7 °E (A95 = 8.5°). These two poles also differ from the younger poles of the NCC and likely represent the primary remanences. Our new results, together with the existing global paleomagnetic data and geological evidence, aided by the “right-way-up” connection model between Laurentia and Baltica in Rodinia, support a NCC–NW Laurentia connection between ca. 1120 and 890 Ma.

Summary of ISO/TC 201 Standard: ISO 22415—Surface chemical analysis—Secondary ion mass spectrometry—Method for determining yield volume in argon cluster sputter depth profiling of organic materials

The International Standard ISO 22415 provides methods to measure sputtering yield volumes of organic test materials using argon cluster ions. The test materials should consist of thin films of known thicknesses between 50 and 1000 nm. The format of the test materials, the measurement of sputtering ion dose, sputtered depth, and reporting requirements for sputtering yield volumes are described.

Model of phosphorus diffusion in silicon for highly doped solar cell emitter layer

Purpose The purpose of this paper was the development of a model enabling precise determination of phosphorus concentration profile in the emitter layer of a silicon solar cell on the basis of diffusion doping process duration and temperature. Fick’s second law, which is fundamental for describing the diffusion process, was assumed as the basis for the model. Design/methodology/approach To establish a theoretical model of the process of phosphorus diffusion in silicon, real concentration profiles measured using the secondary ion mass spectrometry (SIMS) method were used. Samples with the phosphorus dopant source applied onto monocrystalline silicon surface were placed in the heat zone of the open quartz tube furnace, where the diffusion process took place in the temperature of 880°C-940°C. The measured real concentration profiles of these samples became template profiles for the model in development. Findings The model was developed based on phenomena described in the literature, such as the influence of the electric field of dopant ionized atoms and the influence of dopant atom concentration nearing the maximum concentration on the value of diffusion coefficient. It was proposed to divide the diffusion area into low and high dopant concentration region. Originality/value A model has been established which enabled obtaining a high level of consistency between the phosphorus concentration profile developed theoretically and the real profile measured using the SIMS method. A coefficient of diffusion of phosphorus in silicon dependent on dopant concentration was calculated. Additionally, a function describing the boundary between the low and high dopant concentration regions was determined.

In-Depth Characterization of Secondary Phases in Cu2ZnSnS4 Film and Its Application to Solar Cells.

Secondary phases are common in Cu2ZnSnS4 (CZTS) thin films, which can be fatal to the performance of solar cell devices fabricated from this material. They are difficult to detect by X-Ray diffraction (XRD) because of the weak peak in spectra compared with the CZTS layer. Herein, it was found that in-depth elemental distribution by a secondary ion mass spectroscopy method illustrated uniform film composition in the bulk with slight fluctuation between different grains. X-ray photoelectron spectroscopy (XPS) measurement was conducted after sputtering the layer with different depths. An Auger electron spectrum with Auger parameter were used to check the chemical states of elements and examine the distribution of secondary phases in the CZTS films. Secondary phases of CuS, ZnS and SnS were detected at the surface of the CZTS film within a 50-nm thickness while no secondary phases were discovered in the bulk. The solar cell fabricated with the as-grown CZTS films showed a conversion efficiency of 2.1% (Voc: 514.3 mV, Jsc: 10.4 mA/cm2, FF: 39.3%) with an area of 0.2 cm2 under a 100 mW/cm2 illumination. After a 50-nm sputtering on the CZTS film, the conversion efficiency of the solar cell was improved to 6.2% (Voc: 634.0 mV, Jsc: 17.3 mA/cm2, FF: 56.9%).

Interaction of Soda Borosilicate Glass with Water Vapor: Kinetics of Formation of Hydrogetaned Layers

The interaction of water vapor with borosilicate (BS) glass (Corning 7740) at a temperature of 97°C is studied by the method of secondary-ion mass spectrometry. Hydration experiments are carried out over a time period from one day to six months. The profiles of hydrogen distribution in glass are determined by a layer-by-layer analysis using a time-of-flight mass spectrometer. It is experimentally shown in this study that the hydrogenated layer on the surface of soda borosilicate glass growths linearly with time during the first two weeks of hydration (the hydration temperature used in the work) and the thickness of the hydrogenated layer increases in accordance with the parabolic law, i.e., in proportion to the square root of the processing time, starting from the fourth week of the treatment.