Effect of 4H-SiC Target Temperature under Ion Irradiation on the Distribution Profile of Al+ Ions

Abstract

4H-SiC was irradiated with Al+ions at an energy of 190 keV. The depth profiles of implanted aluminum were obtained using the secondary ion mass spectrometry method; a comparison was made with profiles calculated in the SRIM program. Using Rutherford backscattering in channeling mode, we studied the amorphization of the crystal structure after ion implantation in the target at room temperature and 400° C. The fluence of 1015 cm−2 was shown to completely disorder the crystal structure under irradiation of a room temperature target. It was found that after ion irradiation of a target heated to 400° C, the penetration depth of the embedded impurity increases. An increase in the target temperature during irradiation leads to the recombination of a significant number of simple defects and the restoration of the crystal structure. The topography of the samples before and after ion irradiation was compared.