Etching Method Research Articles

Advancements in Superhydrophobic Paper-Based Materials: A Comprehensive Review of Modification Methods and Applications

Superhydrophobic paper-based functional materials have emerged as a sustainable solution with a wide range of applications due to their unique water-repelling properties. Inspired by natural examples like the lotus leaf, these materials combine low surface energy with micro/nanostructures to create air pockets that maintain a high contact angle. This review provides an in-depth analysis of recent advancements in the development of superhydrophobic paper-based materials, focusing on methodologies for modification, underlying mechanisms, and performance in various applications. The paper-based materials, leveraging their porous structure and flexibility, are modified to achieve superhydrophobicity, which broadens their application in oil–water separation, anti-corrosion, and self-cleaning. The review describes the use of these superhydrophobic paper-based materials in diagnostics, environmental management, energy generation, food testing, and smart packaging. It also discusses various superhydrophobic modification techniques, including surface chemical modification, coating technology, physical composite technology, laser etching, and other innovative methods. The applications and development prospects of these materials are explored, emphasizing their potential in self-cleaning materials, oil–water separation, droplet manipulation, and paper-based sensors for wearable electronics and environmental monitoring.

Improved capacitance of NiO and nanoporous silicon electrodes for micro-supercapacitor application

We investigated the NiO/PS/Si and the NiO/Si electrodes to highlight the effect of the PS porous silicon on the enhancement of the electrode performance. We elaborated the PS with the stain etching method, whereas the NiO nickel oxide was synthesized using sol–gel and deposited through the spin coating technique. We showed that PS porous silicon significantly increased the active surface area and improved the electrical and electrochemical properties. Thus, we obtained promising results for NiO/PS/Si. The effective series resistance and interfacial resistances were reduced from 1.8 Ω cm2 and 42 Ω cm2 to 0.05 Ω cm2 and 0.29 Ω cm2 from NiO/Si to NiO/PS/Si, respectively. The capacitance increased from 12.34 µF cm−2 for NiO/Si to 9.64 mF cm−2 for NiO/PS/Si. We found similar capacity values from the CV cyclic voltammetry curves and IS impedance spectroscopy Nyquist plots. We obtained equivalent effective series resistance values from the charge–discharge and Nyquist plots, confirming our results. The NiO/PS/Si electrode showed good stability with only a 3% loss for 5000 galvanostatic cycles. The energy efficiency is estimated from the charge–discharge curves to be 91%.

MoTe2 Photodetector for Integrated Lithium Niobate Photonics.

The integration of a photodetector that converts optical signals into electrical signals is essential for scalable integrated lithium niobate photonics. Two-dimensional materials provide a potential high-efficiency on-chip detection capability. Here, we demonstrate an efficient on-chip photodetector based on a few layers of MoTe2 on a thin film lithium niobate waveguide and integrate it with a microresonator operating in an optical telecommunication band. The lithium-niobate-on-insulator waveguides and micro-ring resonator are fabricated using the femtosecond laser photolithography-assisted chemical-mechanical etching method. The lithium niobate waveguide-integrated MoTe2 presents an absorption coefficient of 72% and a transmission loss of 0.27 dB µm-1 at 1550 nm. The on-chip photodetector exhibits a responsivity of 1 mA W-1 at a bias voltage of 20 V, a low dark current of 1.6 nA, and a photo-dark current ratio of 108 W-1. Due to effective waveguide coupling and interaction with MoTe2, the generated photocurrent is approximately 160 times higher than that of free-space light irradiation. Furthermore, we demonstrate a wavelength-selective photonic device by integrating the photodetector and micro-ring resonator with a quality factor of 104 on the same chip, suggesting potential applications in the field of on-chip spectrometers and biosensors.

Stable and Active Sites Fully Exposed Antibacterial Ceramics Obtained from Ce-based Glass-Ceramics via the Method of Facile In-Situ Etching

Antimicrobial resistance has posed an enormous threat to global public health security. The application of antibacterial ceramics can effectively avoid bacterial cross-infection and inhibit bacterial propagation and microbial growth, which plays a vital role in promoting human health. However, the preparation of durable and efficient antibacterial ceramics remains challenging. This study develops antibacterial ceramics with a core-shell structure with CeO2 glass-ceramics as the core and CeO2/BiOCl heterogeneous shell from Ce-based glass-ceramics via the method of facile in situ etching. The core-shell structure can enhance the structural stability of the antibacterial ceramics and increase the exposure of active sites. The results demonstrated that the antibacterial ceramics presented notable effectiveness in inactivating Escherichia coli (E. coli), and the inactivation rate of E. coli exceeded 99.99% (visible light for 1h) and 99.56% (kept in darkness for 24h). Additionally, the antibacterial ceramics exhibit excellent performance in photodegrading methyl orange, achieving a removal rate of 94.62%, and the active species were detected. This study proposes a novel method for the synthesis of efficient and stable antibacterial ceramics.

MXene Ti3C2@NiO catalysts for improving the kinetic performance of MgH2 hydrogen storage

Magnesium hydride, a promising candidate for hydrogen storage applications, boasts a high hydrogen storage capacity and relatively low cost. Generally, its practical application was limited by the high dehydrogenation temperature, sluggish kinetics, and rapid capacity decay. In this paper, MXene Ti3C2@NiO was successfully synthesized via etching, hydrothermal, and ultrasonic methods and then employed as a catalyst to enhance the hydrogen storage performance of MgH2. The composite exhibited a lower dehydrogenation temperature (The initial dehydrogenation temperature is 183.5 ºC), faster hydrogen de/absorption rates, and better cycling stability. Moreover, the composite achieved a dehydrogenation capacity of 6.52wt% H2 within 4min at 300 ºC, significantly enhancing the hydrogen de/absorption kinetics of MgH2. Synthesizing the characterization tests, it could be found that the in-situ generated metallic Ti, which, in synergy with Mg2Ni/Mg2NiH4, promoted hydrogen adsorption and dissociation. This conclusion might provide a new design insight for improving the hydrogen storage kinetics of Mg-based materials with highly active catalysts.

Holey etching strategy of siloxene nanosheets to improve the rate performance of photo-assisted Li-O2 batteries.

Improving the rate performance is of great significance to achieve high-performance photo-assisted Li-O2 batteries for developing new optimized bifunctional photocatalysts. Herein, a holey etching strategy is developed to prepare porous siloxene nanosheets with a size of 10 nm and few layers (P-siloxene NSs) by a modified Ag+-assisted chemical etching method, and the optimized pore-forming conditions are: Ag+ ion concentration 0.01 mol dm-3, HF concentration 0.565 mol dm-3, and H2O2 concentration 0.327 mol dm-3. By using P-siloxene NSs with a bandgap of 2.77 eV as a novel bifunctional photo-assisted Li-O2 system, the rate performance of the assembled P-siloxene NSs photo-assisted Li-O2 batteries is clearly improved. At a current density of 0.1 mA cm-2, the system shows a low overpotential of 0.35 V, full discharge capacity of 3270 mA h g-1, and 69% round-trip efficiency at 100 cycles. In particular, at a current density of 0.8 mA cm-2, the P-siloxene NSs photo-assisted Li-O2 batteries still give a relatively good charge potential of 3.66 V and a discharge potential of 2.97 V. This work provides a new approach for improving the rate performance of photo-assisted Li-O2 systems and will open up opportunities for the high-efficiency utilization of solar energy in electric systems.

Зв'язок хімічної мікронеоднорідності сірого чавуну та структури пластинчатого графіту

The relationship between chemical microheterogeneity of gray cast iron castings, revealed by the method of color etching in sodium picrate, and the structure of flake graphite was studied. The results of microstructural studies indicate that the crystallization of gray cast iron is accompanied by the emergence of several levels of chemical and structural microheterogeneities of the crystallizing melt, affecting the formation of graphite. Microstructural features indicate that the cast iron melt, which is close in carbon content to the eutectic composition, acquires a dendritic and cellular structure before the formation of graphite. The intensity of chemical microheterogeneity and its topology are hereditarily related to the location, size and shape of graphite inclusions. Flake graphite formed inside and on the periphery of melt cells has different structure and thickness of plates. The enrichment of areas of cast iron melt with silicon leads to the formation of dendrites of primary austenite and primary graphite of the largest size in them. The microhardness of ferrite in the dendrites of former primary austenite is approximately 1.5 times greater than the microhardness of ferrite in areas adjacent to inclusions of primary graphite. A close inverse correlation (r = –0.93) was established between the microhardness of ferrite in areas with different liquation intensities and the thickness of graphite flakes located in these areas. The greatest spread of microhardness values and width of graphite flakes is observed in the most liquated areas enriched with silicon in the center of the cells, corresponding to the location of eutectic colonies. In the spaces between the cells, graphite is observed with the smallest thickness of the flakes, which are located at the smallest distance from each other. It is necessary to continue research into the hereditary influence of the structure and physical and chemical properties of high-carbon iron melts on the mechanism of graphite formation and the features of its structure in cast irons.

PHOTOELECTROCHEMICAL PROPERTIES OF NANOSTRUCTURED SILICON FOR SOLAR WATER SPLITTING

Silicon, one of the most abundant and cost-effective materials on Earth, holds significant promise for applications in water splitting and photovoltaics due to its suitable bandgap energy of approximately 1.12 eV, which allows absorption of ultraviolet, visible, and infrared light. However, the high reflectivity (~25%) of flat silicon surfaces limits its conversion efficiency, making it less efficient for photoelectrochemical (PEC) processes. To address this, nanostructured silicon has emerged as a solution to enhance light absorption, reduce substrate resistance, and improve hydrogen production efficiency. In this study, we fabricated nanostructured silicon photoelectrodes using the metal-assisted chemical etching (MACE) method. The resulting black silicon (b-Si) electrodes demonstrated superior light-harvesting capabilities, leading to significantly enhanced photocurrent densities. Notably, the b-Si photoelectrodes achieved a photocurrent density of 800 μA/cm² at 0V vs RHE (reversible hydrogen electrode), compared to 200 μA/cm² for planar silicon. Furthermore, the b-Si electrodes exhibited excellent long-term stability under continuous illumination for 16 hours. These results highlight the potential of nanostructured silicon as an efficient and stable material for solar-driven PEC water splitting and related renewable energy applications.

A review on recent progress in synthesis, properties, and applications of MXenes

Abstract MXenes, a noble class of two-dimensional (2D) material, discovered in 2011 have gained attention in recent years. They have attracted significant attention due to their flexible elemental composition, distinctive 2D-layered architecture, large surface area, and abundant surface terminations. Top-down synthesis techniques such as HF etching, alkaline etching, and electrochemical methods are used for MXene synthesis. Alongside these methods, methods like chemical vapor deposition (CVD), template method and plasma enhanced pulsed layer deposition (PELPD) are also used for the thin-film synthesis of MXenes. The discovery of double transition-metal layered MXene, solid, and high entropy MXene open up the prospect of further novel structures. MXenes are electrically conductive and have promising optoelectronic, mechanical, and thermoelectric properties. MXenes have also shown immense potential in biomedicine and environmental applications. The surface chemistry of MXene make them ideal for biosensors, drug delivery, and photothermal therapy, while their photocatalytic and adsorption properties enable efficient removal of pollutants and contaminants from water. This review examines the various MAX phase synthesis methods, such as solid-state reactions, hot isostatic pressing, and spark plasma sintering, followed by top-down techniques like HF etching, alkaline etching, and electrochemical etching, as well as bottom-up methods like CVD, template approaches, and plasma-enhanced pulsed layer deposition. The review also looks into the optical, chemical, and electronic properties of MXene, as well as their advancements in energy storage, optoelectronics, pollution avoidance, biomedical applications, and more.

Interface Engineering of Styrenic Polymer Grafted Porous Micro-Silicon/Polyaniline Composite for Enhanced Lithium Storage Anode Materials.

Si anode materials are promising candidates for next-generation Li-ion batteries (LIBs) because of their high capacities. However, expansion and low conductivity result in rapid performance degradation. Herein, we present a facile one-pot method for pyrolyzing polystyrene sulfonate (PSS) polymers at low temperatures (≤400 °C) to form a thin carbonaceous layer on the silicon surface. Specifically, micron silicon (mSi) was transformed into porous mSi (por-mSi) by a metal-assisted chemical etching method, and a phenyl-based thin film derived from the thermolysis of PSS formed a strong Si-C/Si-O-C covalent bonding with the Si surface, which helped maintain stable cycle performance by improving the interfacial properties of mSi. Additionally, PSS-grafted por-mSi (por-mSi@PSS) anode was coated with polyaniline (PANI) for endowing additional electrical conductivity. The por-mSi@PSS/PANI anode demonstrated a high reversible capacity of ~1500 mAh g-1 at 0.1 A g-1 after 100 cycles, outperforming or matching the performance reported in recent studies. A thin double layer composed of phenyl moieties and a conductive PANI coating improved the stability of Si-based anodes and provided an effective pathway for Li+ ion transport to the Si interface, suggesting that polymer-modified Si anodes hold significant promise for advanced LIB applications.

Suppression of Interfacial Oxidation in Core/Shell InP Quantum Dots through Solvent Assisted Core-Etching Strategy for Efficient Green Light-Emitting Diodes.

Indium phosphide (InP) quantum dots (QDs) are promising alternative heavy-metal CdSe QDs for light-emitting diode (LED) application. However, their highly reactive core surface is prone to oxidation, which reduces the photoluminescence quantum yield (PL QY) and impedes subsequent shell growth. Traditional etching methods using HF aqueous solution are problematic as water can induce reoxidation during or after etching. Herein, we present HF pyridine solution as a more effective etching reagent to enhance luminous properties of InP QDs. Pyridine molecules replace the bulky carboxyl ligand, reducing steric hindrance and allowing HF easier access to the core for removing surface oxides. This ligand exchange promotes rapid shell growth, minimizing core exposure to the reaction environment and thereby reoxidation risk. Consequently, the as-prepared core/shell QDs exhibit a high PL QY of ∼90%, and the corresponding LEDs achieve an external quantum efficiency of 15.4% along with a long operational lifetime of 6819 h, outperforming the control devices.

Non-invasive in-situ monitoring of deep etching processes using terahertz metasurfaces

This study presents an in-situ and non-invasive process control and monitoring (PCM) method for deep silicon etching, leveraging terahertz metasurfaces. The technique addresses the challenges for monitoring deep and high aspect ratio etching processes, which are prevalent in semiconductor microfabrication. By incorporating metasurfaces with identical geometric shapes and sizes as crucial components of targeted devices, the method enables accurate monitoring of the etching depth in the process. Continuous shifts of terahertz reflection spectra provide information on etching depth, while abrupt change in the curves highlights the etching endpoint, preventing over-etching. For the commonly used comb-finger structure, numerical simulations demonstrate a strong linear relationship between etching depth and terahertz resonant wavelengths (nonlinearity < 1%) and an abrupt resonant frequency change (> 0.6 THz) at the endpoint. Experimental validations confirm the accuracy of the PCM method, with an etching depth estimation error below 2 µm. This approach enhances the precision of PCM in microfabrication, offering the potential for widespread applications in the production of micromechanical sensors, actuators, and other microelectronic devices.

The Investigation of Graphene Oxide-Enhanced Hybrid Slurry Preparation and Its Polishing Characteristic on CVD Single Crystal Diamond.

As an environment-friendly material, graphene oxide nanosheet can effectively improve the polishing surface quality of single crystal diamond workpieces. However, the lubricating and chemical effects of graphene oxide nanosheets have an uncertain impact on the polishing material removal rate. In this paper, the graphene oxide-enhanced hybrid slurry was prepared with good stability. The femtosecond laser etching and contour measurement method was adopted to analyze the polishing material removal rate of the CVD single crystal diamond workpiece. The surface damage of the workpiece polished with SiC abrasive grains is minimal, while the workpiece with diamond abrasive grains has the largest material removal rate. With an increase in abrasive grain size, the polishing material removal rate increases, but new surface scratches and pits can be introduced if the grain size is too large. Therefore, a grain size of 2.5 μm was selected to improve the surface quality. The surface roughness first decreases and then increases with the increase in polishing rotation speed. At a speed of 4000 rpm, the surface roughness reached its minimum with a relatively high material removal rate simultaneously. A series of CVD single crystal diamond scratching experiments were conducted with different scratching speeds, which proved that graphene oxide can help facilitate material surface micro-protrusion removal.

Direct laser micro-drilling of high-quality photonic nanojet achieved by optical fiber probe with microcone-shaped tip

Photonic nanojet can serve as a powerful tool for direct laser micro-machining based on a non-resonance focusing phenomenon. In this study, we propose a photonic nanojet-based direct micro-drilling technique for polymer material with low-cost and low-power continuous-wave laser. The high-quality photonic nanojet is produced using the microcone-shaped probe tip, which is fabricated by the dynamic chemical etching method. By utilizing laser photonic nanojet triggered thermoplasmonics, the high-aspect-ratio microcavity is fabricated with the low threshold value of laser power. The influences of the photonic nanojet peak intensities and distributions on the drilled microcavities are systematically investigated by the experiments and the finite-difference time-domain simulations. With the continuous-wave solid-state laser at a wavelength of 671 nm, the simulations show that the photonic nanojet with a quality factor of 103 is generated at a distance of ~ 20 μm from the surface of the microcone-shaped tip with a beam waist of 252 nm in the x direction, which could overcome the diffraction limit. The experimental results show that the length and peak intensity of the photonic nanojet have increased considerably in the propagation direction by the microcone-shaped probe tip, which leads to form a deep microcavity in the polymer substrate with an aspect ratio of 5.73. The presented microcone-shaped probe tip has potential applications in processing sub-diffraction features with a high aspect ratio.

Improvement of recessed MOS gate characteristics in normally-off AlN/GaN MOS-HFETs with N2/NH3 thermal treatment

This study investigated the metal–oxide–semiconductor gate characteristics of recessed-gate AlN/GaN metal–oxide–semiconductor-heterojunction-field-effect transistor with N2/NH3 thermal treatment. The gate-channel mobility in recessed-gate structures formed by the inductively coupled plasma-reactive ion etching method is degraded due to plasma-induced damage. The application of thermal treatment to etch-damaged GaN surfaces was observed to re-form a clear step-terrace structure, effectively reversing the effects of the etching damage. A corresponding enhancement in peak field-effect mobility was experimentally verified, with an increase from a pretreatment value of 656 to 1042 cm2/V·s after thermal treatment. Concurrently, an improvement of the lower gate-leakage current by 1–2 orders of magnitude was measured. This thermal treatment method can reduce crystal defects at deep levels of 1.8–2.9 eV below Ec on the etched GaN surface. In particular, this N2/NH3 thermal treatment approach could potentially contribute to the reduction of deep levels such as atomic displacement, gallium vacancies, and those complexes generated by inductively coupled plasma-reactive ion etching.

Nanosurface-Reconstructed Fuel Electrode by Selective Etching for Highly Efficient and Stable Solid Oxide Cells.

Solid oxide cells (SOCs) are promising energy-conversion devices due to their high efficiency under flexible operational modes. Yet, the sluggish kinetics of fuel electrodes remain a major obstacle to their practical applications. Since the electrochemically active region only extends a few micrometers, manipulating surface architecture is vital to endow highly efficient and stable fuel electrodes for SOCs. Herein, a simple selective etching method of nanosurface reconstruction is reported to achieve catalytically optimized hierarchical morphology for boosting the SOCs under different operational modes simultaneously. The selective etching can create many corrosion pits and exposure of more B-site active atoms in Sr2Co0.4Fe1.2Mo0.4O6-δ fuel electrode, as well as promote the exsolution of CoFe alloy nanoparticles. An outstanding electrochemical performance of the fabricated cell with the power density increased by 1.47 times to 1.31W cm-2 at fuel cell mode is demonstrated, while the current density reaches 1.85 A cm-2 under 1.6V at CO2 electrolysis mode (800°C). This novel selective etching method in perovskite oxides provides an appealing strategy to fabricate hierarchical electrocatalysts for highly efficient and stable SOCs with broad implications for clean energy systems and CO2 utilization.

Graphene-based capacitive monolithic microphone with optimized air gap thickness and damping

A graphene-based capacitive monolithic microphone with optimized air gap thickness and damping has been designed, fabricated, and characterized. A bilayer poly(methylmethacrylate)/graphene membrane has been suspended as the movable plate. The membrane has been actuated electrostatically, electrothermally, and acoustically. The motion of the membrane on top of a 2-μm air gap and only one vent hole has been observed and studied, demonstrating the possibility to minimize both the air gap thickness and number of vent holes. During the fabrication process, an optimized combined wet and dry etching method to etch silicon dioxide has been applied to prevent the aluminum electrodes from being attacked. The effect of actuation voltage on displacement amplitude and resonant frequency has been studied. The microphone's mechanical and electrical sensitivity to sound has been characterized.

Synthesis and Characterisation of Porous Carbide-derived Carbon from SiC in Molten Salt

Aims: In this paper, we aimed to prepare SiC-CDC with porous structure from SiC precursor by using simple molten salt electrochemical etching method at 900 ºC in argon at an applied constant voltage of 3.0 V. Background: Nanoporous materials include carbon materials, silica or alumina, gel, and zeolite, which have been known since ancient times. Among all these materials, carbon materials are particularly outstanding. In recent years, carbide-derived carbon (CDC), a type of unconventional carbon material produced by selectively extracting metal elements from the lattice of carbides, has attracted increasing attention from researchers. Many different methods have now been proposed to prepare CDC, among these methods, currently the preparation of mesoporous carbide-derived carbon (CDCs) materials mainly relies on chlorination. The main problems with chlorination are the corrosion of chlorine gas and the treatment of secondary products (MClx). Therefore, the search for environmentally friendly strategies for the production of CDC is still ongoing. Objective: This article proves that we can successfully prepare SiC-CDC with porous structure from SiC precursor by using simple molten salt electrochemical etching method at 900ºC in argon at an applied constant voltage of 3.0 V. Methods: The SiC-CDC with porous structure has been prepared from SiC precursor by using simple molten salt electrochemical etching method at 900ºC in argon at an applied constant voltage of 3.0 V. Results: The results show that the nanoporous SiC-CDC was successfully synthesized from the silicon carbide microspheres powder via by electrolysis in molten CaCl2 at 3.0 V, 900°C for 15 h. Conclusions: The nanoporous SiC-CDC was successfully synthesized from the silicon carbide microspheres powder via by electrolysis in molten CaCl2 at 3.0 V, 900°C for 15 h and their microstructure, specifc surface area, and pore size were analyzed. The SiCCDC obtained in this experiment mainly consisted of amorphous carbon and maintained the shape of SiC particles. The SiC-CDC is a mixture of amorphous carbon and ordered graphite phase with a highly degree of graphitization. The SiC-CDC displays a BET specific surface area of 561.39 m2/g and a total pore volume of 0.39 cm3/g. This method to produce SiC-CDC is very attractive because it will not only pave a new way for the preparation of SiC-CDC but also for mass production of high-quality carbon material.

Enhancing power density in D-mode GaN HEMT direct-current triboelectric nanogenerators through ICP-etched surface engineering

In the evolving landscape of energy harvesting, the refinement of friction properties in metal-semiconductor direct current triboelectric nanogenerators (MSDC TENGs) has garnered significant attention. While prior research predominantly concentrated on achieving superior performance in MSDC TENGs through material manipulation, structural adjustments, and friction mode optimization, there has been a noticeable dearth of investigations into surface engineering or modification of semiconductor materials. In this paper, the surface patterning of depletion mode GaN-based high electron mobility transistor (D-GaN HEMT) as friction materials is done by inductively coupled plasma etching method, involving both mechanism analysis and experimental exploration. Through modulation of etching depth and pattern density, a systematically arranged diamond pattern is created on the surface, augmenting surface roughness and charge density. Consequently, the surface-patterned D-GaN HEMT TENG achieves a maximum short-circuit current of 60 µA and a peak power density of 4.05 W/m², which is about 2.8 times greater than the pristine D-GaN HEMT TENG. Furthermore, the power supply capabilities of the surface-patterned D-GaN HEMT TENG are scrutinized, revealing its proficiency in capacitive charging and discharging. The successful activation of a deep ultraviolet LED underscores its potential applications in ultraviolet disinfection. This research holds substantial significance in optimizing the power generation efficiency and performance of MSDC TENGs employing D-GaN HEMT.

Effects of Ge and B Concentration in Selective Epitaxial Growth of Si1-XGex(:B) at Low-Temperature

As two-dimensional devices approach their scaling limits, monolithic complementary field-effect transistors have emerged to meet the demands of advanced transistors. A low thermal budget process is essential to prevent damage to the underlying layers while forming upper layers. Therefore, a low-temperature approach for the selective epitaxial growth (SEG) of SiGe(:B) in source-drain formation is necessary. The cyclic deposition and etch method was employed for its high selectivity, highlighting the need for further research into the incubation characteristics of B-doped SiGe. [1] We investigated the incubation behavior of SiGe(:B) on SiO2 under varying Ge and B concentrations in an ultra-high vacuum-chemical vapor deposition (UHV-CVD) chamber. In this study, we investigated the influence of the Ge and B concentrations on the incubation time for SiGe(:B) on SiO2, comparing it with the epitaxial growth on Si(100) and Si(111). First, we analyzed the incubation properties of undoped Si1-xGex (0 < x < 0.4) layers. We then explored the effect of B concentration by varying the B flow rate. Our findings indicate the higher Ge concentrations extend the incubation time, independent of the total gas flow rate. In contrast, B doping reduces the incubation time compared to with that of undoped SiGe, and increasing B concentration further shortens the incubation time. Atomic force microscopy and scanning electron microscopy were used to examine amorphous formation on SiO2. In addition, high-resolution X-ray diffractometry and ellipsometry were used to analyze Ge and B concentrations, as well as growth thickness. Our study offers comprehensive insights into the low- temperature SEG process window for SiGe(:B). Acknowledgment This work was supported by the Technology Innovation Programs (RS-2023-00235609) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea).