The electrical and superconducting properties of indium films are studied. The films were condensed in H2 atmosphere (\({\text{p}}_{{\text{H}}_{\text{2}} } \) ranged from 4×10−7 to 6×10−5 Torr) onto a substrate cooled with liquid helium down to about 3 K. As the hydrogen concentration increased, the normal resistivity ρ n of the films continuously increased up to a point where the metal-insulator transition occurred. It was found for the first time that saturation of In films with hydrogen lead to a significant increase (up to ∼5.15 K) inT c and to zero-dimensional paraconductivity aboveT c . Possible mechanisms for an effect of dissolved hydrogen on ρ n andT c are considered along with the influence of structural defects onT c . At\({\text{p}}_{{\text{H}}_{\text{2}} } \)>2×10−6 Torr the prepared films appear to be a metastable phase In(H) with high nonequilibrium hydrogen concentration, which decayed at ∼ 5 K. The destruction of In(H) was accompanied by a release of H2 from the film, a sharp drop of resistance (by three and more orders of magnitude), and a rise inT c . The properties and the formation and stabilization conditions of the In(H) phase are considered in detail and this phase is compared with the a-Bi(H) phase observed earlier.