Metalorganic Chemical Vapor Deposition Method Research Articles

Heteroepitaxial growth of the orthorhombic Ta2O5 single-crystalline films on epi-GaN/α-Al2O3 (0001) substrates by MOCVD

Orthorhombic tantalum pentoxide (β-Ta2O5) monocrystalline films were deposited on epi-GaN/α-Al2O3 (0001) substrates using the metal-organic chemical vapor deposition method. The prepared films were grown along the β-Ta2O5 (001) plane. The film deposited at 850 °C exhibited the best crystalline quality and the corresponding FWHM of the XRD ω-rocking curve for β-Ta2O5 (001) plane was 1.81°. The prepared β-Ta2O5 film possessed a domain structure, and the growth mechanism was studied in detail. By the XRD Φ scan and HRTEM analyses, the in-plane epitaxial relationship of the 850 °C-prepared sample was determined as β-Ta2O5[100] ‖ GaN [1‾100]. The elemental composition and valence states were studied and the band gap of the film prepared at 850 °C was calculated to be 4.34 eV by the analysis of the electron energy loss spectrum.

Chemical Vapour Deposition of Scandia-Stabilised Zirconia Layers on Tubular Substrates at Low Temperatures.

The paper presents results of investigation on synthesis of non-porous ZrO2-Sc2O2 layers on tubular substrates by MOCVD (metalorganic chemical vapor deposition) method using Sc(tmhd)3 (Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)scandium(III), 99%) and Zr(tmhd)4 (Tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionato)zirconium)(IV), 99.9+%) as basic reactants. The molar content of Sc(tmhd)3 in the gas mixture was as follows: 14, 28%. The synthesis temperature was in the range of 600–700 °C. The value of extended Grx/Rex2 expression (Gr-Grashof number, Re-Reynolds number and x-the distance from the gas inflow point) was less than 0.01. The layers were deposited under reduced pressure or close to atmospheric pressure. The layers obtained were tested using scanning electron microscope (SEM) with an energy dispersive X-ray spectroscope (EDS) microanalyzer, X-ray diffractometer and UV-Vis spectrophotometer. The layers deposited were non-porous, amorphous or nanocrystalline with controlled chemical composition. The layers synthesized at 700 °C were nanocrystalline. ZrO2-Sc2O3 layers with 14 mol.% Sc2O3 content had a rhombohedral structure.

Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures.

A quaternary lattice matched InAlGaN barrier layer with am indium content of 16.5 ± 0.2% and thickness of 9 nm was developed for high electron mobility transistor structures using the metalorganic chemical-vapor deposition method. The structural, morphological, optical and electrical properties of the layer were investigated planning realization of microwave power and terahertz plasmonic devices. The measured X-ray diffraction and modeled band diagram characteristics revealed the structural parameters of the grown In0.165Al0.775Ga0.06N/Al0.6Ga0.4N/GaN heterostructure, explaining the origin of barrier photoluminescence peak position at 3.98 eV with the linewidth of 0.2 eV and the expected red-shift of 0.4 eV only. The thermally stable density of the two-dimension electron gas at the depth of 10.5 nm was experimentally confirmed to be 1.2 × 1013 cm−2 (1.6 × 1013 cm−2 in theory) with the low-field mobility values of 1590 cm2/(V·s) and 8830 cm2/(V·s) at the temperatures of 300 K and 77 K, respectively.

Mechanism of defects and electrode structure on the performance of AlN-based metal semiconductor metal detectors

We used the metal-organic chemical vapor deposition(MOCVD) method to grow AlN material on a c-plane sapphire substrate and fabricate an AlN-based metal-semiconductor-metal (MSM) detector. Analyzing the influence mechanism of different dislocation densities in AlN materials and detector electrode structure on the detector performance, it was found that the lower the dislocations can effectively reduce the dark current of the detector under zero bias voltage, and help improve the performance of the detector. The study also found that when the finger spacing of the detector remained the same and the finger width increased, the efficiency of the detector decreased, while the response time of the detector increased, when the finger width of the detector electrodes remained unchanged and the finger spacing increased, the response time of the detector increased. Therefore, the electrode finger width and finger spacing must be compromised in the design of the electrode structure to improve the performance of the AlN-based MSM detector.

Enhancement-mode normally-off β-Ga2O3:Si metal-semiconductor field-effect deep-ultraviolet phototransistor

In this work, a solar-blind ultraviolet (UV) photodetector based on a three-terminal enhancement-mode (E-mode) Si-doped β-Ga2O3 (β-Ga2O3:Si) metal-semiconductor field-effect transistor structure is demonstrated, whose threshold voltage (V th) and subthreshold swing are 4.04 V and 1.4 V dec−1, respectively. A 400 nm thick β-Ga2O3:Si thin film is prepared on sapphire substrate by using metal-organic chemical vapor deposition method. Controlling the channel currents by the Schottky gate voltage in the dark and under illuminations, the photodetector shows dark current (I dark) as low as 13.4 pA, photo-to-dark current ratio of 4.85 × 104 and linear dynamic range of 29.6 dB, illuminated by 254 nm UV light of 245 μW cm−2. As the UV light is turned on and off, the output current rise and decay time (τ r and τ d) are 420 ms and 350 ms. Moreover, at drain voltage (V ds) of 5 V and gate voltage (V gs) of 0 V, the responsivity (R), specific detectivity (D*) and external quantum efficiency are achieved as 74 A W−1, 2.15 1014 cm Hz1/2 W−1 (Jones) and 3.6 104%, respectively.

Wafer-Scale Uniform Growth of an Atomically Thin MoS2 Film with Controlled Layer Numbers by Metal-Organic Chemical Vapor Deposition.

The growth control of a molybdenum disulfide (MoS2) thin film, including the number of layers, growth rate, and electrical property modulation, remains a challenge. In this study, we synthesized MoS2 thin films using the metal-organic chemical vapor deposition (MOCVD) method with a 2 inch wafer scale and achieved high thickness uniformity according to the positions on the substrate. In addition, we successfully controlled the number of MoS2 layers to range from one to five, with a growth rate of 10 min per layer. The layer-dependent optical and electrical properties were characterized by photoluminescence, Raman spectroscopy, differential reflectance spectroscopy, and field effect transistors. To guide the growth of MoS2, we summarized the relation between the growth aspects and the precursor control in the form of a growth map. Reference to this growth map enabled control of the growth rate, domain density, and domain size according to the application purposes. Finally, we confirmed the electrical performance of MOCVD-grown MoS2 with five layers under a high-κ dielectric environment, which exhibited an on/off current ratio of 10∼6 and a maximum field effect mobility of 8.6 cm2 V-1 s-1.

High-sensitive, self-powered deep UV photodetector based on p-CuSCN/n-Ga2O3 thin film heterojunction

Herein, a CuSCN/Ga2O3 heterojunction device was fabricated by spin-coating and metal-organic chemical vapor deposition (MOCVD) methods. Under the irradiation of 254 nm deep ultraviolet (DUV) light with an intensity of 1000 μW/cm2, the device shown high sensitivity and favorable self-powered performances with photo-to-dark current ratio (PDCR) of 1.29 × 104, photo responsivity (R) of 5.5 mA/W, rejection ratio (R270nm/R600nm) of 4.33 × 103, and specific detectivity (D∗) of 3.8 × 1011 cm Hz1/2W−1 (Jones) at −5 V. In addition, the device has a rise time of 0.45 s and 3.80 s, and a decay time of 0.26 s and 0.26 s. In general, the CuSCN/Ga2O3 heterojunction prepared in this work may well be a potential candidate for achieving a self-powered and high-performance DUV photodetector.

Ion beam sputtering-deposited thermally annealed h-BN transferred film for improving GaN crystal quality

In this article, we focus on the effect of high-temperature annealing (HTA) on ion beam-sputtered hexagonal boron nitride (h-BN)/sapphire samples with different thicknesses. Using atomic force microscopy (AFM), Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet–visible (UV–vis) spectroscopy, and other test methods, the changes in the properties of the h-BN material after HTA were compared and discussed in depth. The experimental results showed that HTA can reduce the B/N ratio and carbon in the h-BN film, increasing the film's optical bandgap. In addition, based on the annealed h-BN/sapphire template, high-quality GaN film epitaxy on h-BN was achieved by the metal-organic chemical vapor deposition (MOCVD) method. The method of HTA for h-BN grown by IBSD has huge potential for large size, low cost, and safe production.

Noble Metals for Modern Implant Materials: MOCVD of Film Structures and Cytotoxical, Antibacterial, and Histological Studies.

This work is aimed at developing the modification of the surface of medical implants with film materials based on noble metals in order to improve their biological characteristics. Gas-phase transportation methods were proposed to obtain such materials. To determine the effect of the material of the bottom layer of heterometallic structures, Ir, Pt, and PtIr coatings with a thickness of 1.4–1.5 μm were deposited by metal–organic chemical vapor deposition (MOCVD) on Ti6Al4V alloy discs. Two types of antibacterial components, namely, gold nanoparticles (AuNPs) and discontinuous Ag coatings, were deposited on the surface of these coatings. AuNPs (11–14 nm) were deposited by a pulsed MOCVD method, while Ag films (35–40 nm in thickness) were obtained by physical vapor deposition (PVD). The cytotoxic (24 h and 48 h, toward peripheral blood mononuclear cells (PBMCs)) and antibacterial (24 h) properties of monophase (Ag, Ir, Pt, and PtIr) and heterophase (Ag/Pt, Ag/Ir, Ag/PtIr, Au/Pt, Au/Ir, and Au/PtIr) film materials deposited on Ti-alloy samples were studied in vitro and compared with those of uncoated Ti-alloy samples. Studies of the cytokine production by PBMCs in response to incubation of the samples for 24 and 48 h and histological studies at 1 and 3 months after subcutaneous implantation in rats were also performed. Despite the comparable thickness of the fibrous capsule after 3 months, a faster completion of the active phase of encapsulation was observed for the coated implants compared to the Ti alloy analogs. For the Ag-containing samples, growth inhibition of S. epidermidis, S. aureus, Str. pyogenes, P. aeruginosa, and Ent. faecium was observed.

The Influence of the Preheating Temperature of the (−2 0 1) β-Ga2O3 Substrates on c-Plane GaN Epitaxial Growth

In this paper, we demonstrate the direct epitaxial growth of c-plane GaN on a preheated (−2 0 1) β-Ga2O3 single-crystal substrate with no interlayer or pre-patterning processes by using the atmospheric pressure metalorganic chemical vapor deposition method. The results show that high-temperature preheating (>500 °C) can modify the surface morphology of the substrate so that the crystalline quality of the grown GaN layer can be improved. With higher preheated temperatures, the grown GaN layer reveals smaller FWHM (full width at half-maximum) of the X-ray rocking curve. In addition, we find that the photoluminescence spectra of the GaN layers reveal their narrowest linewidth at a preheated temperature of 800 °C. These results support improvements of crystalline quality and provide optimization of a c-GaN grown epitaxially on the preheated (−2 0 1) β-Ga2O3 substrates for further device fabrication.

Substantial and simultaneous reduction of major electron traps and residual carbon in homoepitaxial GaN layers

The presence of large amounts of electron traps together with residual carbon, as well as their trade-off relationship, is an obstacle to fabricating next-generation GaN-based power devices using the metal-organic chemical vapor deposition (MOCVD) method. Using the hydride vapor phase epitaxy (HVPE) method, we have overcome all of the aforementioned obstacles. In a previous study, we realized GaN homoepitaxial layers with greater purity than the best MOCVD-grown layers by removing quartz components from the high-temperature region of the HVPE apparatus. In the present study, the concentration of residual carbon was further reduced to less than 3 × 1014 cm−3 by removing carbon components near the wafer. In addition, the concentrations of major electron traps widely observed in homoepitaxial GaN layers were substantially reduced to the 1012–1013 cm−3 range via further modification of the HVPE conditions/apparatus to suppress etching of a stainless-steel flange of the HVPE reactor. The results imply that stainless-steel-related impurities such as Fe and Cr are the most likely cause of the major electron traps although native point defects have long been considered their origin. The resultant GaN layers, which showed substantially improved optical and electrical properties, did not exhibit a trade-off relationship between the concentrations of carbon and electron traps.

Scale Up of High-Performance REBCO Tapes in a Pilot-Scale Advanced MOCVD Tool With In-Line 2D-XRD System

We have reported the development of an Advanced Metal-Organic Chemical Vapor Deposition (A-MOCVD) method featuring ohmic heating of the substrate for REBCO film growth, direct tape temperature monitoring, and laminar precursor flow. This A-MOCVD method has been used to fabricate 4-5 μm thick film REBCO tapes with record-high performance: critical currents exceeding 8700 A/12 mm at 30 K, 3 T; and engineering current density of 5200 A/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 4.2 K, 15 T. Recently, we constructed a pilot-scale reel-to-reel A-MOCVD system to scale up the technology to long tapes. Preliminary batches of tapes exhibit consistent performance and good uniformity along the length. An in-line 2D X-ray Diffraction (XRD) system has been integrated into the pilot A-MOCVD tool to monitor the REBCO texture and composition, RE <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> content, and the dimensions of BaMO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (BMO, M=Zr,Hf) nanorods that act as artificial pinning centers. Specifically, the streaking angle between REBCO (103) and BZO (101) has been found to correlate well with (Ba+M)/Cu of the film, lift factor in critical current over a range of temperatures and magnetic fields, and the size of the BMO nanorods. The in-line 2D-XRD is expected to serve as a valuable quality measuring tool supporting realtime feedback control for the process to yield uniform and consistent manufacturing of high-performance REBCO tapes by Advanced MOCVD.

Features of repetitively-pulsed oscillation of an erbium fiber laser with a saturable absorber Bi2Te3 covered by silicone at various temperatures

The oscillation of erbium doped fiber lasers (EDFL) in the Q-switch mode is investigated. Etched out fiber tapers coated with two types of saturable absorbers (SA) are tested as passive Q-switches. SA of the first type comprises two-component silicone with nano-flakes of a Bi2Te3 single crystal dissolved in it. A thin film of Bi2Te3 synthesized by the Metalorganic Chemical Vapor Deposition (MOCVD) method on the surface of the fiber taper and coated with the same silicone served as SA of the second type. Housed within a refrigerator the fabricated sample of fiber taper with SA was in series plug into the fiber ring of the laser. A maximum is observed in the temperature dependence of the EDFL pulse repetition rate with both types of Q-switches. A decrease in temperature to –4 °C (for the first type) and to 9.5 °C (for the second one) led to the oscillation wavelength change from 1560 to 1530 nm. Cooling of Q-switches of the first and second types was accompanied by a decrease in the duration of laser pulses by a factor of 2.5 and 3.5, respectively, at a pump power corresponded to the conversion of laser oscillation from CW to repetitively-pulsed mode. At a given laser pump power, a 20% and 40% increment in the pulse repetition rate is observed upon cooling of passive Q-switches based on Bi2Te3 nanopowder-in-polymer and Bi2Te3 thin-film, up to temperatures of –14.8 °C and 4.4 °C, respectively, as compared to that one at room temperature. A diminution in the temperature of a passive Q-switch made it possible to obtain pulsed laser oscillation in a circuit that did not support the pulsed mode at room temperature.

Band offsets of (100) β -(AlxGa1−x)2O3/ β -Ga2O3 heterointerfaces grown via MOCVD

The valence and conduction band offsets at (100) β-(AlxGa1−x)2O3/β-Ga2O3 heterointerfaces with the increasing Al composition are determined via x-ray photoelectron spectroscopy. The (100) β-(AlxGa1−x)2O3 thin films with the Al composition of 0.10 &amp;lt; x &amp;lt; 0.52 are grown on (100) β-Ga2O3 substrates by the metalorganic chemical vapor deposition method. By examining the onset of inelastic energy loss in core-level atomic spectra, the bandgaps of β-Ga2O3 and β-(AlxGa1−x)2O3 alloys with different Al compositions are measured from 4.83 ± 0.12 eV (x = 0) to 5.85 ± 0.08 eV (x = 0.52). The valence band offsets are determined to be −0.06 ± 0.06 eV (x = 0.10), −0.11 ± 0.06 eV (x = 0.33), and −0.19 ± 0.06 eV (x = 0.52). The conduction band offsets of 0.34 ± 0.17 eV (x = 0.10), 0.62 ± 0.17 eV (x = 0.33), and 1.21 ± 0.16 eV (x = 0.52) are determined from the extracted bandgaps of β-(AlxGa1−x)2O3 alloys. The determined band alignments at β-(AlxGa1−x)2O3/β-Ga2O3 interfaces reveal the formation of type-II (staggered gap) heterojunctions for all Al compositions investigated. The bowing parameters obtained from the quadratic fitting of both conduction band minimum and valence band maximum values are estimated to be 1.25 eV and 0.005 eV, respectively.

Vertical growth characterization of InAs nanowires grown by selective area growth on patterned InP(1 1 1)B substrate by a MOCVD method

InAs nanowires (NWs) were selectively grown on hole patterned InP (111)B substrate by Metal-Organic Chemical Vapor Deposition (MOCVD). This study reports the vertical growth behavior of InAs NWs transitioned at a certain height and its difference under various growth conditions. This certain height is referred as “critical height.” This is a boundary where both vertical and lateral growth occur. Under this height, only vertical growth takes place. Vertical growth characteristics were reported through the determination of the critical height of NWs. The critical height was investigated for its three growth conditions; growth temperature, molar flow rates of In and As sources. Increase in growth temperature induced increase in critical height. Increase in growth temperature enhances the mobility of In adatom. This further increases diffusion length on the sidewall surface. However, increased AsH3 molar flow rate decreased the critical height. The surface reaction of In adatoms on the top (111)B surface of InAs NWs was reduced by the formation of As trimer. As a result, reduced relative vertical growth rate decreased the critical height of InAs NWs. The critical height of InAs NWs, however, was not changed by the variation of the Tri-Methyl Indium (TMIn) molar flow rate. This variation doesn’t affect the mobility of In adatom on the sidewall surface or the surface reaction rate on the top (111)B surface of NWs. Hence, we concluded that variation of the mobility of In adatom on the sidewall surface and relative vertical growth rate affect the critical height of InAs NWs.

High performance InGaAs channel MOSFETs on highly resistive InAlAs buffer layers

We investigated the effect of growth temperature on the structural and electrical properties of InAlAs layers grown on InP (100) substrates by metalorganic chemical vapor deposition (MOCVD) method. Flat surface morphology of InAlAs layers with root mean square (RMS) surface roughness values below 0.4 nm were obtained at 500 °C and 660 °C, while RMS surface roughness values of InAlAs layers grown in the region of intermediate temperature increase from 0.7 nm at 540 °C to 3.9 nm at 620 °C with increasing growth temperature. This increase in surface roughness is caused by the phase separation of the InAlAs layer, which is divided into In-rich and Al-rich column regions. The resistivity values of the InAlAs layers grown at 500 °C and 660 °C, in which the phase separation was not observed, were analyzed by the transmission line method (TLM) and those values were ~1 × 104 Ω·cm and 0.06 Ω·cm, respectively. We propose that oxygen atoms being incorporated into InAlAs layers during growth were the cause effect explaining the change in resistivity depending on the growth temperature. In order to evaluate high-resistivity InAlAs layers grown at 500 °C for a buffer layer of devices, we fabricated InGaAs-channel metal oxide field effect transistors (MOSFETs). The on/off current ratio values obtained from ID-VG transfer measurement was a value of 6.10 × 105, indicating a high-performance characteristic.

ZrO2-Sm2O3 Layer Growth Using the MOCVD Method at Low Temperatures and Under Reduced Pressure

This work presents the results of structure, microstructure, and chemical composition investigations performed on ZrO2-Sm2O3 layers synthesized by MOCVD (metal-organic chemical vapor deposition) using Zr(tmhd)4 and Sm(tmhd)3 as reactants on quartz glass substrate. The molar percentage of Sm(tmhd)3 used to obtain the layers at both 500 and 550 °C was 14% and 22.75%, respectively. Synthesis parameters were selected so that the value of the extended criterion Grx/Rex2 (Gr—Grashof number, Re—Reynolds number, x—the distance from the gas inflow point to the CVD (MOCVD) reactor) could be maintained below 0.01. It was determined from XRD (X-ray diffraction) analyses that the layers deposited at 500 °C contained small amounts of a crystalline phase and the layers obtained at 550 °C contained greater amounts of the crystalline phase (solid solution). SEM (scanning electron microscope) observations have also shown that the crystalline phase is present in the layers synthesized at 500 °C, as well as at 550 °C. EDS (energy dispersive spectroscopy) studies have indicated that molar content of Sm2O3 in the crystalline phase is lower in comparison to the amount present in the respective amorphous phase. The larger the Sm2O3 content in the layer, the higher the growth rate.

Ultrahigh-performance planar β-Ga2O3 solar-blind Schottky photodiode detectors

The low dark current, high responsivity and high specific detectivity could be preferably achieved in detectors based on junctions, owing to the efficient constraint of carriers. Compared with the other junctions, planar Schottky junctions have simple structures and technological demands and are easy integrated. Herein, in this work, we prepared the β -Ga2O3 thin film by metal-organic chemical vapor deposition method to construct planar Ti/ β -Ga2O3/Ni Schottky photodiode detectors with different on-state resistances. Fortunately, all the devices exhibit state-of-the-art performances, such as responsivity of 175–1372 A W−1, specific detectivity of 1014 Jones and external quantum efficiency of 85700%–671500%. In addition, the dependences of device performances on the on-state resistances indicate that the higher dark currents, photocurrents and photoresponsivities may well be obtained when on-state resistance is smaller, due to the less external power is used to overcome the impendence and condensance at the Ti/ β -Ga2O3 and Ni/ β -Ga2O3 interfaces, but contributing to higher electric current flow both in the dark and under illuminations.

A novel Ni/AC catalyst prepared by MOCVD method for hydrogenation of ethyl levulinate to γ-valerolactone

GVL (γ-valerolactone) is identified as an important biomass platform molecule due to its wide application. In this work, a series of novel supported Ni catalysts with different supports and Ni loading were synthesized via metal-organic chemical vapor deposition (MOCVD) method for the hydrogenation of EL (ethyl levulinate) to GVL. Fourier transform infrared spectroscopy (FT-IR), X-ray powder diffraction (XRD), nitrogen adsorption/desorption, inductively coupled plasma optical emission spectroscopy (ICP-OES) and transmission electron microscopy (TEM) were used to characterize the as-synthesized catalysts. The results showed that the 2 wt.% Ni/AC(MOCVD) presented superior catalytic activity when compared with the catalyst prepared by impregnation method. This behavior is explained in terms of the smaller Ni nanoparticles (4.28 nm) and higher dispersion on 2 wt.% Ni/AC(MOCVD). Among the catalysts, the 2 wt.% Ni/AC catalyst exhibited the best catalytic performance with 99.7 % EL conversion and 79.8 % GVL yield under 1 MPa initial H2 pressure (measured at room temperature) at 250 °C for 2 h. In addition, the reaction conditions were optimized and the stability of the catalyst were also investigated. The insights gained from this study in the design of high dispersed Ni particles with smaller particle size via MOCVD method will facilitate the metal-catalyzed hydrogenation of EL to GVL.

Multifractal study of TiO2 thin films deposited by MO-CVD method: The role of precursor amount and substrate temperature

Since TiO2 thin film is an important semiconductor with many applications in various fields, in this work we studied surface morphology of TiO2 thin films deposited by metal-organic chemical vapor deposition method using multifractal technique. In order to do this, AFM images of prepared TiO2 thin films were analyzed by multifractal method and the effects of the precursor amount and substrate temperature on multifractality of The TiO2 thin films surface were investigated. Multifractal nature of surface of TiO2 thin films deposited with different amounts of precursor at two different positions of substrate with different temperatures was detected using multifractal analysis of the AFM images. The multifractal spectrum f(α) obtained from AFM images indicated that the Δf and width of spectrum are functions dependent on precursor amount and substrate temperature. The obtained data showed that local fluctuation and hight distribution increase with increasing in temperature of substrate for high amount of precursor. Also, it was observed that the substrate temperature has no effect on width of multifractal spectrum at low amount of precursor. Our results clearly showed that morphological complexity of the TiO2 surface and the effect of the precursor amount and temperature of substrate are satisfactorily described by perform multifractal analysis on AFM images. These results can be used in the design and manufacture of interface layer for application in laptops, planer device, transparent electrode, solar cell, sensors and optical devices.