Abstract The extraordinary magnetoresistance (EMR) effect is a form of geometric magnetoresistance that occurs when the current redistribution inside a hybrid metal-semiconductor device changes when subjected to an external out-of-plane magnetic field. While the influence of material and geometrical properties on sensor performance has been extensively studied, the topography of EMR devices has not yet received much attention. Typically, flat, 2D topographies are assumed when optimizing EMR devices, which does not reflect the significant topography present in actual devices. This study fills this gap by numerically investigating concentric circular EMR devices with different topographies using a 3D finite element model. We show that EMR devices with metal top contacts, which are more straightforward to fabricate, behave similarly to conventional EMR devices where the metal shunt of the same thickness is embedded into the devices. For InSb/Au devices, both types of devices produce a magnetoresistance of 4.9×105 % at 1 T. Our results also reveal that the magnetoresistance increases with the thickness for a large range of metal thicknesses. In addition, we also explore sidewall dimensions and show that it is desirable to have a thicker shunt with thinner sidewalls, compared to the opposite case.
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